JP4397299B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
JP4397299B2
JP4397299B2 JP2004223412A JP2004223412A JP4397299B2 JP 4397299 B2 JP4397299 B2 JP 4397299B2 JP 2004223412 A JP2004223412 A JP 2004223412A JP 2004223412 A JP2004223412 A JP 2004223412A JP 4397299 B2 JP4397299 B2 JP 4397299B2
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JP
Japan
Prior art keywords
substrate
nozzle
rotating
gas
blocking member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004223412A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006041444A5 (enExample
JP2006041444A (ja
Inventor
勝彦 宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd, Dainippon Screen Manufacturing Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2004223412A priority Critical patent/JP4397299B2/ja
Priority to TW094116824A priority patent/TWI258185B/zh
Priority to US11/154,363 priority patent/US7722736B2/en
Priority to CN2005100786509A priority patent/CN1727081B/zh
Publication of JP2006041444A publication Critical patent/JP2006041444A/ja
Publication of JP2006041444A5 publication Critical patent/JP2006041444A5/ja
Application granted granted Critical
Publication of JP4397299B2 publication Critical patent/JP4397299B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075—Cleaning of glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2004223412A 2004-07-30 2004-07-30 基板処理装置 Expired - Fee Related JP4397299B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004223412A JP4397299B2 (ja) 2004-07-30 2004-07-30 基板処理装置
TW094116824A TWI258185B (en) 2004-07-30 2005-05-24 Substrate processing apparatus and method
US11/154,363 US7722736B2 (en) 2004-07-30 2005-06-16 Apparatus for and method of processing a substrate with processing liquid
CN2005100786509A CN1727081B (zh) 2004-07-30 2005-06-21 基板处理装置和基板处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004223412A JP4397299B2 (ja) 2004-07-30 2004-07-30 基板処理装置

Publications (3)

Publication Number Publication Date
JP2006041444A JP2006041444A (ja) 2006-02-09
JP2006041444A5 JP2006041444A5 (enExample) 2007-09-13
JP4397299B2 true JP4397299B2 (ja) 2010-01-13

Family

ID=35730770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004223412A Expired - Fee Related JP4397299B2 (ja) 2004-07-30 2004-07-30 基板処理装置

Country Status (4)

Country Link
US (1) US7722736B2 (enExample)
JP (1) JP4397299B2 (enExample)
CN (1) CN1727081B (enExample)
TW (1) TWI258185B (enExample)

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US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
JP4262004B2 (ja) * 2002-08-29 2009-05-13 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2005045206A (ja) * 2003-07-07 2005-02-17 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP4446875B2 (ja) * 2004-06-14 2010-04-07 大日本スクリーン製造株式会社 基板処理装置
JP4698407B2 (ja) * 2005-12-20 2011-06-08 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4907400B2 (ja) * 2006-07-25 2012-03-28 大日本スクリーン製造株式会社 基板処理装置及び基板処理方法
JP4708286B2 (ja) * 2006-08-11 2011-06-22 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4762098B2 (ja) * 2006-09-28 2011-08-31 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4679479B2 (ja) * 2006-09-28 2011-04-27 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5090089B2 (ja) * 2006-10-19 2012-12-05 大日本スクリーン製造株式会社 基板処理装置
JP4936878B2 (ja) * 2006-12-25 2012-05-23 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4841451B2 (ja) 2007-01-31 2011-12-21 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4906559B2 (ja) * 2007-03-29 2012-03-28 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US7958899B2 (en) 2007-08-21 2011-06-14 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning apparatus and substrate cleaning method
JP5242242B2 (ja) * 2007-10-17 2013-07-24 株式会社荏原製作所 基板洗浄装置
EP2051285B1 (en) * 2007-10-17 2011-08-24 Ebara Corporation Substrate cleaning apparatus
US7879183B2 (en) * 2008-02-27 2011-02-01 Applied Materials, Inc. Apparatus and method for front side protection during backside cleaning
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KR101065557B1 (ko) * 2008-10-29 2011-09-19 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치
JP5156661B2 (ja) * 2009-02-12 2013-03-06 東京エレクトロン株式会社 液処理装置および液処理方法
JP5623104B2 (ja) * 2010-03-18 2014-11-12 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
JP5270607B2 (ja) 2010-03-30 2013-08-21 大日本スクリーン製造株式会社 基板処理装置
US8926788B2 (en) * 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
CN103988257A (zh) * 2011-06-30 2014-08-13 Hoya株式会社 Hdd用玻璃基板的制造方法、hdd用玻璃基板以及hdd用磁记录介质
JP5996381B2 (ja) 2011-12-28 2016-09-21 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP5646528B2 (ja) * 2012-03-09 2014-12-24 東京エレクトロン株式会社 液処理装置
US20130309874A1 (en) * 2012-05-15 2013-11-21 Lam Research Ag Method and apparatus for liquid treatment of wafer-shaped articles
US10707099B2 (en) 2013-08-12 2020-07-07 Veeco Instruments Inc. Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
US9768041B2 (en) 2013-08-12 2017-09-19 Veeco Precision Surface Processing Llc Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
TWI569349B (zh) 2013-09-27 2017-02-01 斯克林集團公司 基板處理裝置及基板處理方法
TWI597770B (zh) * 2013-09-27 2017-09-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6338904B2 (ja) 2014-03-24 2018-06-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN104183524A (zh) * 2014-08-27 2014-12-03 上海华力微电子有限公司 一种晶圆边缘的刻蚀装置
TWI661479B (zh) * 2015-02-12 2019-06-01 Screen Holdings Co,. Ltd. 基板處理裝置、基板處理系統以及基板處理方法
US10730059B2 (en) 2015-03-05 2020-08-04 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
DE102015104735A1 (de) * 2015-03-27 2016-09-29 Obducat Ab Drehteller zur Aufnahme eines Substrats für eine Belackungsvorrichtung
TWI661477B (zh) 2015-06-18 2019-06-01 日商思可林集團股份有限公司 基板處理裝置
US9968970B2 (en) * 2015-12-04 2018-05-15 Lam Research Ag Spin chuck with in situ cleaning capability
JP6817821B2 (ja) * 2016-05-25 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN107437516B (zh) 2016-05-25 2021-07-13 株式会社斯库林集团 基板处理装置及基板处理方法
CN106158709B (zh) * 2016-07-22 2018-09-11 江苏鲁汶仪器有限公司 一种晶圆切割装置和方法
JP6885753B2 (ja) * 2017-03-08 2021-06-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
TWI797121B (zh) 2017-04-25 2023-04-01 美商維克儀器公司 半導體晶圓製程腔體
JP6842391B2 (ja) * 2017-09-07 2021-03-17 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
KR102355875B1 (ko) * 2017-12-18 2022-02-08 세키스이가가쿠 고교가부시키가이샤 표면 처리 방법 및 장치
CN108133906A (zh) * 2017-12-27 2018-06-08 德淮半导体有限公司 晶片处理设备及晶片处理方法
JP7218098B2 (ja) * 2018-05-31 2023-02-06 株式会社デンソーテン 塗布装置および塗布方法
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
WO2020039849A1 (ja) * 2018-08-22 2020-02-27 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102154486B1 (ko) * 2018-10-11 2020-09-10 주식회사 테스 가스공급유닛
CN111081585B (zh) * 2018-10-18 2022-08-16 北京北方华创微电子装备有限公司 喷淋装置及清洗设备
CN113113328B (zh) * 2021-03-04 2023-01-31 江苏亚电科技有限公司 单片晶圆清洗装置清洗盘结构及单片晶圆清洗装置
CN113539937B (zh) * 2021-07-09 2023-03-03 江西龙芯微科技有限公司 一种晶圆承载装置

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JP4698407B2 (ja) * 2005-12-20 2011-06-08 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4708286B2 (ja) * 2006-08-11 2011-06-22 大日本スクリーン製造株式会社 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
US7722736B2 (en) 2010-05-25
US20060021636A1 (en) 2006-02-02
CN1727081A (zh) 2006-02-01
JP2006041444A (ja) 2006-02-09
TWI258185B (en) 2006-07-11
CN1727081B (zh) 2011-06-08
TW200605209A (en) 2006-02-01

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