CN113539937B - 一种晶圆承载装置 - Google Patents
一种晶圆承载装置 Download PDFInfo
- Publication number
- CN113539937B CN113539937B CN202110777514.8A CN202110777514A CN113539937B CN 113539937 B CN113539937 B CN 113539937B CN 202110777514 A CN202110777514 A CN 202110777514A CN 113539937 B CN113539937 B CN 113539937B
- Authority
- CN
- China
- Prior art keywords
- wafer
- bearing
- fixed
- protective cover
- pipes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000007788 liquid Substances 0.000 claims abstract description 40
- 230000001681 protective effect Effects 0.000 claims abstract description 20
- 239000007921 spray Substances 0.000 claims abstract description 11
- 238000005192 partition Methods 0.000 claims abstract description 9
- 238000003780 insertion Methods 0.000 claims description 11
- 230000037431 insertion Effects 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract description 4
- 238000001035 drying Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 27
- 239000003153 chemical reaction reagent Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/01—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements
- B01D29/018—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with flat filtering elements ring shaped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明公开了一种晶圆承载装置,属于承载装置领域,包括底板,所述底板上固定有承载底座,承载底座上通过斜杆固定有保护罩,保护罩的一侧壁上安装有固定板,固定板上安装有热风机,热风机的出气口连接有出气管,出气管的一端连接有出气头,底板上表面的一侧固定有水箱,水箱内设置有隔板,水箱的一侧壁上连接有两根支管,支管上安装有电磁阀,两根支管的一端连接有出液管,出液管的一端连接有喷头,且出液管上安装有水泵,底板上表面安装有电机,承载底座的中间位置开设有通孔;本发明设计新颖,结构巧妙,在对晶圆进行承载的同时,可以清理晶圆上的膜层,并对晶圆进行清洗烘干,保证晶圆的质量,方便后续加工,值得推广。
Description
技术领域
本发明涉及承载装置技术领域,尤其涉及一种晶圆承载装置。
背景技术
化学气相沉积(ChemicalVaporDeposition,CVD)为半导体组件制程中重要的制程技术之一。其方法主要是将晶圆暴露在一种或多种不同的前驱物(precursor)下,使晶圆表面发生氧化还原等化学反应,藉此沉积薄膜于晶圆表面上。在进行化学气相沉积的过程中,薄膜之膜厚均匀度是决定薄膜质量好坏的重要指标之一。
在集成电路器件制造过程中,需要利用晶圆承载盘来承载多个圆盘,使多个晶圆可以在设备中进行磊晶,但是目前的承载盘仅仅提供承载的功能,而且在利用化学气相沉积方法沉积膜层时,会将膜层材料如氧化硅、氮化硅和多晶硅等沉积到晶圆的背面。在晶圆背面沉积的材料在后续制程过程中可能会分裂成层或剥落产生缺陷,同时也会影响后续黄光制程的散焦和对准及快速退火制程的发射率等。
发明内容
本发明提出的一种晶圆承载装置,以解决上述背景技术中提出的问题。
为了实现上述目的,本发明采用了如下技术方案:
一种晶圆承载装置,包括底板,所述底板上固定有承载底座,承载底座上通过斜杆固定有保护罩,保护罩的一侧壁上安装有固定板,固定板上安装有热风机,热风机的出气口连接有出气管,出气管的一端连接有出气头,底板上表面的一侧固定有水箱,水箱内设置有隔板,水箱的一侧壁上连接有两根支管,支管上安装有电磁阀,两根支管的一端连接有出液管,出液管的一端连接有喷头,且出液管上安装有水泵,底板上表面安装有电机,承载底座的中间位置开设有通孔,通孔内活动设置有转轴,转轴的底端与电机的输出轴传动连接,转轴的顶端固定有插块,承载底座的上方设置有承载盘,承载盘上开设有多个承载槽,承载盘的中间位置开设有插孔,底板的上表面设置有集水槽,集水槽内固定有滤网,滤网的上方设置有挡板。
作为一种优选的实施方式,所述承载底座为上小下大的圆台型结构,承载底座的顶壁沿圆周方向均匀滚动安装有多个钢珠。
作为一种优选的实施方式,所述保护罩为上下均设置有开口的圆柱形结构,且保护罩位于承载底座的外部。
作为一种优选的实施方式,所述水箱的一侧壁上连接有有两根加液管,一根加液管位于水箱侧壁的顶部,另一根加液管位于隔板的下方,且两根加液管上均安装有加液阀。
作为一种优选的实施方式,所述出气头和喷头均通过连杆固定在保护罩的顶部,且出气头和喷头分别位于保护罩的两侧。
作为一种优选的实施方式,所述插孔位于插块的正上方,插块为矩形结构,且插块与插孔尺寸相匹配。
作为一种优选的实施方式,所述集水槽为环形结构,集水槽的一侧壁上连接有两根排液管,一根排液管位于集水槽的底部,另一根排液管位于挡板的上方,且两根排液管上均安装有排液阀。
作为一种优选的实施方式,所述滤网和挡板均为环形结构,挡板的四周设置有密封条,且挡板上对称安装有把手。
本发明的有益效果:
1、该一种晶圆承载装置通过设置承载底座、电机、转轴、承载盘、插块、插孔、水箱、隔板、支管、电磁阀、喷头和水泵等结构,水箱内设置有隔板,在水箱上下两层分别加入清洗液和化学溶液,可以有效清理晶圆背后的膜层,并清洗残留的化学溶剂,保证晶圆的质量;
2、该一种晶圆承载装置通过设置固定板、热风机、出气管和出气头等结构,在清洗完成后,可以快速对晶圆进行烘干,方便后续加工。
3、该一种晶圆承载装置通过设置集水槽、滤网和挡板等结构,可以收集清理过后的废液,便于回收利用,值得推广。
附图说明
图1为本发明的结构示意图;
图2为本发明的保护罩和承载底座的结构示意图;
图3为本发明的承载底座的俯视图;
图4为本发明的承载盘的俯视图;
图5为本发明的集水槽的俯视图;
图6为本发明的挡板的俯视图。
图中标号:1、底板;2、承载底座;3、保护罩;4、固定板;5、热风机;6、出气管;7、出气头;8、水箱;9、隔板;10、支管;11、电磁阀;12、出液管;13、喷头;14、水泵;15、电机;16、转轴;17、插块;18、承载盘;19、承载槽;20、插孔;21、集水槽;22、滤网;23、挡板。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。
参照图1-6,一种晶圆承载装置,包括底板1,底板1上固定有承载底座2,承载底座2上通过斜杆固定有保护罩3,保护罩3的一侧壁上安装有固定板4,固定板4上安装有热风机5,热风机5的出气口连接有出气管6,出气管6的一端连接有出气头7,底板1上表面的一侧固定有水箱8,水箱8内设置有隔板9,水箱8的一侧壁上连接有两根支管10,支管10上安装有电磁阀11,两根支管10的一端连接有出液管12,出液管12的一端连接有喷头13,且出液管12上安装有水泵14,底板1上表面安装有电机15,承载底座2的中间位置开设有通孔,通孔内活动设置有转轴16,转轴16的底端与电机15的输出轴传动连接,转轴16的顶端固定有插块17,承载底座2的上方设置有承载盘18,承载盘18上开设有多个承载槽19,承载盘18的中间位置开设有插孔20,底板1的上表面设置有集水槽21,集水槽21内固定有滤网22,滤网22的上方设置有挡板23。
承载底座2为上小下大的圆台型结构,承载底座2的顶壁沿圆周方向均匀滚动安装有多个钢珠。
保护罩3为上下均设置有开口的圆柱形结构,且保护罩3位于承载底座2的外部。
水箱8的一侧壁上连接有有两根加液管,一根加液管位于水箱8侧壁的顶部,另一根加液管位于隔板9的下方,且两根加液管上均安装有加液阀。
出气头7和喷头13均通过连杆固定在保护罩3的顶部,且出气头7和喷头13分别位于保护罩3的两侧。
插孔20位于插块17的正上方,插块17为矩形结构,且插块17与插孔20尺寸相匹配。
集水槽21为环形结构,集水槽21的一侧壁上连接有两根排液管,一根排液管位于集水槽21的底部,另一根排液管位于挡板23的上方,且两根排液管上均安装有排液阀。
滤网22和挡板23均为环形结构,挡板23的四周设置有密封条,且挡板23上对称安装有把手。
工作原理:承载盘18放置在承载底座2上,晶圆背部朝上放置在承载吵19内,承载盘18的上的插孔20与插块17尺寸相匹配,插块17插入插孔20内,可以对承载盘18进行限位,水箱8内设置有隔板9,在隔板9的上方加入化学试剂,隔板9的下方加入清洗液,将挡板23从集水槽21内取出,然后关闭下方支管10上的电磁阀11,打开上方的电磁阀11和水泵14,化学试剂通过喷头13喷出,同时打开电机15,电机15带动转轴16和承载盘18转动,使得晶圆随着承载盘18转动,化学试剂可以全面的喷洒在晶圆上,去除晶圆上的膜层,保护罩3可以避免化学试剂被甩出,化学试剂会流到集水槽21内,清理完成后,将挡板23放入集水槽21内,打开下方支管10上的电磁阀11,关闭上方的电磁阀11,喷头13喷出清洗液,对晶圆进行清理,避免化学试剂残留在晶圆上腐蚀晶圆,清理废液会留在挡板23的上方,与化学试剂分开,方便回收利用,清洗完成后,关闭水泵14以及电磁阀11,然后打开热风机5,吹出热风对晶圆进行烘干,方便后续加工,值得推广。
在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的设备或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。
Claims (7)
1.一种晶圆承载装置,包括底板(1),其特征在于,所述底板(1)上固定有承载底座(2),承载底座(2)上通过斜杆固定有保护罩(3),保护罩(3)的一侧壁上安装有固定板(4),固定板(4)上安装有热风机(5),热风机(5)的出气口连接有出气管(6),出气管(6)的一端连接有出气头(7),底板(1)上表面的一侧固定有水箱(8),水箱(8)内设置有隔板(9),水箱(8)的一侧壁上连接有两根支管(10),支管(10)上安装有电磁阀(11),两根支管(10)的一端连接有出液管(12),出液管(12)的一端连接有喷头(13),且出液管(12)上安装有水泵(14),底板(1)上表面安装有电机(15),承载底座(2)的中间位置开设有通孔,通孔内活动设置有转轴(16),转轴(16)的底端与电机(15)的输出轴传动连接,转轴(16)的顶端固定有插块(17),承载底座(2)的上方设置有承载盘(18),承载盘(18)上开设有多个承载槽(19),承载盘(18)的中间位置开设有插孔(20),底板(1)的上表面设置有集水槽(21),集水槽(21)内固定有滤网(22),滤网(22)的上方设置有挡板(23);
所述集水槽(21)为环形结构,集水槽(21)的一侧壁上连接有两根排液管,一根排液管位于集水槽(21)的底部,另一根排液管位于挡板(23)的上方,且两根排液管上均安装有排液阀。
2.根据权利要求1所述的一种晶圆承载装置,其特征在于,所述承载底座(2)为上小下大的圆台型结构,承载底座(2)的顶壁沿圆周方向均匀滚动安装有多个钢珠。
3.根据权利要求1所述的一种晶圆承载装置,其特征在于,所述保护罩(3)为上下均设置有开口的圆柱形结构,且保护罩(3)位于承载底座(2)的外部。
4.根据权利要求1所述的一种晶圆承载装置,其特征在于,所述水箱(8)的一侧壁上连接有有两根加液管,一根加液管位于水箱(8)侧壁的顶部,另一根加液管位于隔板(9)的下方,且两根加液管上均安装有加液阀。
5.根据权利要求1所述的一种晶圆承载装置,其特征在于,所述出气头(7)和喷头(13)均通过连杆固定在保护罩(3)的顶部,且出气头(7)和喷头(13)分别位于保护罩(3)的两侧。
6.根据权利要求1所述的一种晶圆承载装置,其特征在于,所述插孔(20)位于插块(17)的正上方,插块(17)为矩形结构,且插块(17)与插孔(20)尺寸相匹配。
7.根据权利要求1所述的一种晶圆承载装置,其特征在于,所述滤网(22)和挡板(23)均为环形结构,挡板(23)的四周设置有密封条,且挡板(23)上对称安装有把手。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110777514.8A CN113539937B (zh) | 2021-07-09 | 2021-07-09 | 一种晶圆承载装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110777514.8A CN113539937B (zh) | 2021-07-09 | 2021-07-09 | 一种晶圆承载装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113539937A CN113539937A (zh) | 2021-10-22 |
CN113539937B true CN113539937B (zh) | 2023-03-03 |
Family
ID=78098215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110777514.8A Active CN113539937B (zh) | 2021-07-09 | 2021-07-09 | 一种晶圆承载装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113539937B (zh) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000037583A (ko) * | 1998-12-01 | 2000-07-05 | 김영환 | 반도체 웨이퍼 세정장치 |
CN1727081A (zh) * | 2004-07-30 | 2006-02-01 | 大日本网目版制造株式会社 | 基板处理装置和基板处理方法 |
KR20080020387A (ko) * | 2006-08-31 | 2008-03-05 | 주식회사 하이닉스반도체 | 웨이퍼 세정방법 |
JP2011071209A (ja) * | 2009-09-24 | 2011-04-07 | Tokyo Electron Ltd | 洗浄・乾燥処理方法、洗浄・乾燥処理装置、および記録媒体 |
CN112201593A (zh) * | 2020-09-23 | 2021-01-08 | 北京北方华创微电子装备有限公司 | 晶圆清洗设备 |
CN112542420A (zh) * | 2020-11-16 | 2021-03-23 | 天霖(张家港)电子科技有限公司 | 一种晶圆承载装置 |
CN112735989A (zh) * | 2020-12-31 | 2021-04-30 | 至微半导体(上海)有限公司 | 一种适用于供酸系统的高洁净湿法设备 |
CN113035742A (zh) * | 2021-02-10 | 2021-06-25 | 江苏亚电科技有限公司 | 一种半导体制造用晶圆清洗回收装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8420550B2 (en) * | 2006-12-15 | 2013-04-16 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for cleaning backside etch during manufacture of integrated circuits |
JP4786624B2 (ja) * | 2007-09-28 | 2011-10-05 | 新日本工機株式会社 | 半導体ウエハ加工装置 |
US8662963B2 (en) * | 2011-05-12 | 2014-03-04 | Nanya Technology Corp. | Chemical mechanical polishing system |
JP5901477B2 (ja) * | 2012-09-10 | 2016-04-13 | 東京エレクトロン株式会社 | 塗布、現像装置 |
JP6304592B2 (ja) * | 2014-03-25 | 2018-04-04 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
EP2955745A1 (en) * | 2014-06-11 | 2015-12-16 | Applied Materials Switzerland Sàrl | Wafer cleaning system |
KR102401361B1 (ko) * | 2017-07-19 | 2022-05-24 | 세메스 주식회사 | 다이 본딩 장치 |
US20190224594A1 (en) * | 2018-01-22 | 2019-07-25 | David Douglas Dieziger | Portable filtering apparatus and system |
CN111243979A (zh) * | 2018-11-28 | 2020-06-05 | 长鑫存储技术有限公司 | 单片式晶圆清洗设备及清洗干燥方法 |
CN109786314B (zh) * | 2018-12-19 | 2021-07-27 | 华进半导体封装先导技术研发中心有限公司 | 用于夹持塑封晶圆的固定装置及真空溅射金属薄膜工艺 |
CN213026095U (zh) * | 2020-10-08 | 2021-04-20 | 常州市好利莱光电科技有限公司 | 半导体晶圆气动旋转工作台 |
-
2021
- 2021-07-09 CN CN202110777514.8A patent/CN113539937B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000037583A (ko) * | 1998-12-01 | 2000-07-05 | 김영환 | 반도체 웨이퍼 세정장치 |
CN1727081A (zh) * | 2004-07-30 | 2006-02-01 | 大日本网目版制造株式会社 | 基板处理装置和基板处理方法 |
KR20080020387A (ko) * | 2006-08-31 | 2008-03-05 | 주식회사 하이닉스반도체 | 웨이퍼 세정방법 |
JP2011071209A (ja) * | 2009-09-24 | 2011-04-07 | Tokyo Electron Ltd | 洗浄・乾燥処理方法、洗浄・乾燥処理装置、および記録媒体 |
CN112201593A (zh) * | 2020-09-23 | 2021-01-08 | 北京北方华创微电子装备有限公司 | 晶圆清洗设备 |
CN112542420A (zh) * | 2020-11-16 | 2021-03-23 | 天霖(张家港)电子科技有限公司 | 一种晶圆承载装置 |
CN112735989A (zh) * | 2020-12-31 | 2021-04-30 | 至微半导体(上海)有限公司 | 一种适用于供酸系统的高洁净湿法设备 |
CN113035742A (zh) * | 2021-02-10 | 2021-06-25 | 江苏亚电科技有限公司 | 一种半导体制造用晶圆清洗回收装置 |
Also Published As
Publication number | Publication date |
---|---|
CN113539937A (zh) | 2021-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101652837B (zh) | 从电极组件上清洁表面金属污染物的方法 | |
KR100897428B1 (ko) | 기판세정장치 및 기판세정방법 | |
US6969456B2 (en) | Method of using vertically configured chamber used for multiple processes | |
US20060196531A1 (en) | Substrate processing apparatus | |
US5529626A (en) | Spincup with a wafer backside deposition reduction apparatus | |
CN1933759B (zh) | 利用相容化学品的基板刷子擦洗和接近清洗干燥程序、接近基板制备程序和实施前述程序的方法、设备和系统 | |
JPS587830A (ja) | 薄片状物品の洗浄方法及び装置 | |
US6843259B2 (en) | Solution treatment unit | |
CN113539937B (zh) | 一种晶圆承载装置 | |
US6185370B1 (en) | Heating apparatus for heating an object to be processed | |
CN101853781A (zh) | 利用相容化学品的基板刷子擦洗和接近清洗干燥程序、接近基板制备程序和实施前述程序的方法、设备和系统 | |
JPH09260266A (ja) | 回転式基板処理装置 | |
JP4502921B2 (ja) | 基板処理における排気装置 | |
US6576055B2 (en) | Method and apparatus for controlling air over a spinning microelectronic substrate | |
US20060219257A1 (en) | Cleaning device and cleaning method | |
JP4567178B2 (ja) | スピン処理装置 | |
JP2002028588A (ja) | 液処理方法 | |
KR20090053724A (ko) | 기판 처리 장치 | |
JP3634983B2 (ja) | 加熱処理装置 | |
JP2000068244A (ja) | 洗浄装置 | |
JP3296428B2 (ja) | Wet処理方法と装置 | |
CN116368268A (zh) | 镀覆装置及基板清洗方法 | |
JP2004304138A (ja) | 基板処理装置 | |
JP3307652B2 (ja) | 基板を処理するための装置 | |
JPH05121391A (ja) | 処理液モニタリング装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |