JP5646528B2 - 液処理装置 - Google Patents
液処理装置 Download PDFInfo
- Publication number
- JP5646528B2 JP5646528B2 JP2012053459A JP2012053459A JP5646528B2 JP 5646528 B2 JP5646528 B2 JP 5646528B2 JP 2012053459 A JP2012053459 A JP 2012053459A JP 2012053459 A JP2012053459 A JP 2012053459A JP 5646528 B2 JP5646528 B2 JP 5646528B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chuck
- elevating
- liquid
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007788 liquid Substances 0.000 title claims description 162
- 230000003028 elevating effect Effects 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 61
- 230000002093 peripheral effect Effects 0.000 claims description 48
- 230000001174 ascending effect Effects 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 257
- 238000000034 method Methods 0.000 description 26
- 239000007789 gas Substances 0.000 description 24
- 230000002378 acidificating effect Effects 0.000 description 14
- 238000001035 drying Methods 0.000 description 14
- 238000010306 acid treatment Methods 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
21 基板保持部
22 チャックベース
25 回転駆動部
26 回転軸
31 第1チャック部材
32 第2チャック部材
35 上面側処理液ノズル
41 下面側処理液供給管
46 ドレインカップ
50 昇降筒部材
51 上側被当接部
51a 下部
52 下側被当接部
52a 上部
55 第1当接部
55a 第1ローラ
56 第2当接部
56a 第2ローラ
58 バネ部材
60 昇降シリンダ
W ウエハ
Claims (7)
- 基板を水平に保持する基板保持部と、
前記基板保持部に保持された前記基板に処理液を供給するノズルと、
前記基板保持部に対して昇降自在に設けられた昇降部材と、
前記基板保持部に保持された前記基板の下面に処理液およびガスの少なくとも1つを供給する下面側供給管を有する軸部材と、
前記昇降部材を昇降駆動する昇降駆動部と、を備え、
前記基板保持部は、保持ベースと、前記保持ベースに移動自在に設けられ、各々が当該基板の周縁部に係合する係合位置と当該基板を開放する開放位置との間で付勢力付与機構の付勢力によって移動する第1係合部材および第2係合部材と、を有し、
前記第1係合部材に、前記昇降部材の外周面に当接した第1当接部が連結され、
前記第2係合部材に、前記昇降部材の外周面に当接した第2当接部が連結され、
前記昇降部材は、前記軸部材を内側に通すように円筒状に形成され、前記昇降部材の外周面に設けられた、当該昇降部材の昇降方向において互いに異なる位置に配置された上側被当接部および下側被当接部を有し、
前記第1当接部が前記上側被当接部に当接している場合、前記第1係合部材は前記係合位置に移動すると共に、前記第2係合部材は前記開放位置に移動し、
前記第2当接部が前記下側被当接部に当接している場合、前記第1係合部材は前記開放位置に移動すると共に、前記第2係合部材は前記係合位置に移動し、
前記ノズルから前記基板に処理液を供給している間、前記昇降部材の昇降方向の位置は、前記第1当接部が前記上側被当接部に当接する、または前記第2当接部が前記下側被当接部に当接するように変化し、前記軸部材の昇降方向の位置は変化しないことを特徴とする液処理装置。 - 前記昇降部材の前記上側被当接部および前記下側被当接部は、当該昇降部材の外周面に対して凹状に形成されていることを特徴とする請求項1に記載の液処理装置。
- 前記上側被当接部の下部は、前記昇降部材の昇降方向において、前記下側被当接部の上部と同じ位置または当該下側被当接部の当該上部より下方に配置されていることを特徴とする請求項1または2に記載の液処理装置。
- 前記第1当接部および前記第2当接部は、前記昇降部材の外周面において昇降方向に転動自在なローラを含むことを特徴とする請求項1乃至3のいずれかに記載の液処理装置。
- 前記ノズルは、前記基板保持部に保持された前記基板の上面に処理液を供給するように構成されていることを特徴とする請求項1乃至4のいずれかに記載の液処理装置。
- 前記基板保持部を回転駆動する回転軸を含む回転駆動部を更に備え、
前記昇降部材は、前記回転軸に連結されて、前記基板保持部と共に回転することを特徴とする請求項1乃至5のいずれかに記載の液処理装置。 - 前記基板保持部は、前記基板の周方向に互いに交互に配置された3つの前記第1係合部材および3つの前記第2係合部材を有し、
前記昇降部材は、前記第1係合部材および前記第2係合部材に対応する3つの前記上側被当接部および3つの前記下側被当接部を有していることを特徴とする請求項6に記載の液処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012053459A JP5646528B2 (ja) | 2012-03-09 | 2012-03-09 | 液処理装置 |
TW102107713A TWI562260B (en) | 2012-03-09 | 2013-03-05 | Liquid processing device |
KR1020130023260A KR101899165B1 (ko) | 2012-03-09 | 2013-03-05 | 액 처리 장치 |
US13/784,932 US9272310B2 (en) | 2012-03-09 | 2013-03-05 | Liquid processing apparatus |
CN201310075317.7A CN103311156B (zh) | 2012-03-09 | 2013-03-08 | 液处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012053459A JP5646528B2 (ja) | 2012-03-09 | 2012-03-09 | 液処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013187490A JP2013187490A (ja) | 2013-09-19 |
JP5646528B2 true JP5646528B2 (ja) | 2014-12-24 |
Family
ID=49112965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012053459A Active JP5646528B2 (ja) | 2012-03-09 | 2012-03-09 | 液処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9272310B2 (ja) |
JP (1) | JP5646528B2 (ja) |
KR (1) | KR101899165B1 (ja) |
CN (1) | CN103311156B (ja) |
TW (1) | TWI562260B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412639B2 (en) | 2013-12-06 | 2016-08-09 | Tel Fsi, Inc. | Method of using separate wafer contacts during wafer processing |
CN107112257A (zh) * | 2014-12-10 | 2017-08-29 | 东京毅力科创Fsi公司 | 检测从旋转卡盘丢失的晶片 |
CN104492764A (zh) * | 2014-12-26 | 2015-04-08 | 苏州凯锝微电子有限公司 | 一种晶圆清洗系统 |
SG11201909037TA (en) * | 2017-03-30 | 2019-10-30 | Acm Res Shanghai Inc | Substrate cleaning apparatus |
JP6954160B2 (ja) * | 2018-02-02 | 2021-10-27 | 東京エレクトロン株式会社 | 液処理装置及び液処理装置のティーチング方法 |
JP7304742B2 (ja) * | 2019-06-06 | 2023-07-07 | 東京エレクトロン株式会社 | 基板加工装置 |
JP7370201B2 (ja) * | 2019-09-20 | 2023-10-27 | 株式会社Screenホールディングス | 基板処理装置 |
JP7325283B2 (ja) * | 2019-09-27 | 2023-08-14 | 株式会社Screenホールディングス | 基板処理装置 |
JP2022191540A (ja) * | 2021-06-16 | 2022-12-28 | 株式会社荏原製作所 | 基板支持機構、基板洗浄装置及び基板処理方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63153839A (ja) * | 1986-08-13 | 1988-06-27 | Dainippon Screen Mfg Co Ltd | 基板の回転保持装置 |
JPH04186626A (ja) | 1990-11-16 | 1992-07-03 | Nec Yamaguchi Ltd | エッチング装置 |
JP3831043B2 (ja) | 1997-01-24 | 2006-10-11 | 東京エレクトロン株式会社 | 回転処理装置 |
JPH10303110A (ja) * | 1997-04-30 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
US20040065540A1 (en) * | 2002-06-28 | 2004-04-08 | Novellus Systems, Inc. | Liquid treatment using thin liquid layer |
TWI261875B (en) * | 2002-01-30 | 2006-09-11 | Tokyo Electron Ltd | Processing apparatus and substrate processing method |
JP2004006672A (ja) * | 2002-04-19 | 2004-01-08 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP2004186633A (ja) * | 2002-12-06 | 2004-07-02 | Shimada Phys & Chem Ind Co Ltd | 平板状被処理物の処理装置および処理方法 |
JP4397299B2 (ja) * | 2004-07-30 | 2010-01-13 | 大日本スクリーン製造株式会社 | 基板処理装置 |
-
2012
- 2012-03-09 JP JP2012053459A patent/JP5646528B2/ja active Active
-
2013
- 2013-03-05 TW TW102107713A patent/TWI562260B/zh active
- 2013-03-05 KR KR1020130023260A patent/KR101899165B1/ko active IP Right Grant
- 2013-03-05 US US13/784,932 patent/US9272310B2/en active Active
- 2013-03-08 CN CN201310075317.7A patent/CN103311156B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TWI562260B (en) | 2016-12-11 |
CN103311156A (zh) | 2013-09-18 |
KR20130103378A (ko) | 2013-09-23 |
TW201405688A (zh) | 2014-02-01 |
CN103311156B (zh) | 2017-03-01 |
KR101899165B1 (ko) | 2018-09-14 |
JP2013187490A (ja) | 2013-09-19 |
US20130233361A1 (en) | 2013-09-12 |
US9272310B2 (en) | 2016-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5646528B2 (ja) | 液処理装置 | |
JP5375871B2 (ja) | 液処理装置、液処理方法、コンピュータプログラムを格納した記憶媒体 | |
JP5596071B2 (ja) | 液処理装置 | |
JP6229933B2 (ja) | 処理カップ洗浄方法、基板処理方法および基板処理装置 | |
US9768039B2 (en) | Substrate processing apparatus | |
JP5996425B2 (ja) | 基板処理装置を洗浄するための洗浄治具および洗浄方法、および基板処理システム | |
KR101678231B1 (ko) | 액 처리 장치 및 액 처리 방법 | |
KR101267631B1 (ko) | 기판 처리 장치, 기판 처리 방법 및 기억 매체 | |
WO2013021883A1 (ja) | 液処理装置 | |
KR102402297B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP4850952B2 (ja) | 液処理装置、液処理方法および記憶媒体 | |
JP5716696B2 (ja) | 液処理装置、液処理方法及びコンピュータ読取可能な記憶媒体 | |
JP5309118B2 (ja) | 基板液処理装置 | |
WO2013054838A1 (ja) | 液処理装置および液処理方法 | |
JP5726637B2 (ja) | 液処理装置、液処理方法 | |
JP7336967B2 (ja) | 基板処理装置、および基板処理方法 | |
JP5726636B2 (ja) | 液処理装置、液処理方法 | |
JP5405446B2 (ja) | 基板液処理装置 | |
JP2019134000A (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131216 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140422 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140425 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140619 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141010 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141105 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5646528 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |