JP4351057B2 - 光検出装置、撮像装置及び距離画像取得装置 - Google Patents

光検出装置、撮像装置及び距離画像取得装置 Download PDF

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Publication number
JP4351057B2
JP4351057B2 JP2003550286A JP2003550286A JP4351057B2 JP 4351057 B2 JP4351057 B2 JP 4351057B2 JP 2003550286 A JP2003550286 A JP 2003550286A JP 2003550286 A JP2003550286 A JP 2003550286A JP 4351057 B2 JP4351057 B2 JP 4351057B2
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output
circuit
photosensitive
light
voltage
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JPWO2003049190A1 (ja
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行信 杉山
晴義 豊田
直久 向坂
誠一郎 水野
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Measurement Of Optical Distance (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2003550286A 2001-12-05 2002-12-05 光検出装置、撮像装置及び距離画像取得装置 Expired - Fee Related JP4351057B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001371753 2001-12-05
JP2001371753 2001-12-05
JP2002064000 2002-03-08
JP2002064000 2002-03-08
PCT/JP2002/012770 WO2003049190A1 (fr) 2001-12-05 2002-12-05 Dispositif de detection de lumiere, dispositif de formation d'images et dispositif d'acquisition d'images a distance

Publications (2)

Publication Number Publication Date
JPWO2003049190A1 JPWO2003049190A1 (ja) 2005-04-21
JP4351057B2 true JP4351057B2 (ja) 2009-10-28

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JP2003550286A Expired - Fee Related JP4351057B2 (ja) 2001-12-05 2002-12-05 光検出装置、撮像装置及び距離画像取得装置

Country Status (8)

Country Link
US (1) US7193197B2 (enExample)
EP (1) EP1453098B1 (enExample)
JP (1) JP4351057B2 (enExample)
KR (1) KR100903450B1 (enExample)
CN (1) CN100394606C (enExample)
AU (1) AU2002349455A1 (enExample)
TW (1) TW200301352A (enExample)
WO (1) WO2003049190A1 (enExample)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
WO2019171716A1 (ja) * 2018-03-08 2019-09-12 浜松ホトニクス株式会社 光検出装置及び光検出方法
WO2019171717A1 (ja) * 2018-03-08 2019-09-12 浜松ホトニクス株式会社 光検出装置及び光検出方法
JP2020513601A (ja) * 2016-11-02 2020-05-14 プレシラブズ エスエー 検出装置、位置決めコード、および位置検出方法

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JP3965049B2 (ja) * 2001-12-21 2007-08-22 浜松ホトニクス株式会社 撮像装置
WO2004065899A1 (ja) * 2003-01-22 2004-08-05 Hamamatsu Photonics K.K. 光検出装置
JP2004264332A (ja) * 2003-01-24 2004-09-24 Hamamatsu Photonics Kk 多重画像形成位置ずれ検出装置、画像濃度検出装置及び多重画像形成装置
JP4099413B2 (ja) * 2003-03-20 2008-06-11 浜松ホトニクス株式会社 光検出装置
JP4418720B2 (ja) * 2003-11-21 2010-02-24 キヤノン株式会社 放射線撮像装置及び方法、並びに放射線撮像システム
JP2005218052A (ja) 2004-02-02 2005-08-11 Hamamatsu Photonics Kk 光検出装置
JP4920178B2 (ja) 2004-06-24 2012-04-18 浜松ホトニクス株式会社 歪み検出システムおよび歪み検出方法
JP4425078B2 (ja) 2004-07-12 2010-03-03 浜松ホトニクス株式会社 エンコーダ
US7507595B2 (en) 2004-12-30 2009-03-24 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
JP2007081225A (ja) * 2005-09-15 2007-03-29 Asahi Kasei Electronics Co Ltd 赤外線センサ、および、その製造方法
JP4808557B2 (ja) 2006-07-04 2011-11-02 浜松ホトニクス株式会社 固体撮像装置
JP4795191B2 (ja) * 2006-10-04 2011-10-19 浜松ホトニクス株式会社 位置計測センサ、３次元位置計測装置、及び３次元位置計測方法
JP5034554B2 (ja) * 2007-02-27 2012-09-26 コニカミノルタホールディングス株式会社 相関演算装置、相関演算方法及びプログラム
JP2008216127A (ja) * 2007-03-06 2008-09-18 Konica Minolta Holdings Inc 距離画像生成装置、距離画像生成方法及びプログラム
JP5098369B2 (ja) * 2007-03-06 2012-12-12 コニカミノルタホールディングス株式会社 距離画像生成装置、距離画像生成方法及びプログラム
JP5028154B2 (ja) * 2007-06-20 2012-09-19 キヤノン株式会社 撮像装置及びその制御方法
EP2639781A1 (en) * 2012-03-14 2013-09-18 Honda Motor Co., Ltd. Vehicle with improved traffic-object position detection
JP6197291B2 (ja) * 2012-03-21 2017-09-20 株式会社リコー 複眼カメラ装置、及びそれを備えた車両
KR102223279B1 (ko) * 2014-07-08 2021-03-05 엘지전자 주식회사 측정장치 및 이를 구비하는 웨어러블 디바이스
US10900776B2 (en) * 2018-02-06 2021-01-26 Saudi Arabian Oil Company Sensor device for distance offset measurements
WO2024086308A1 (en) * 2022-10-20 2024-04-25 Quantum-Si Incorporated Optical stabilization techniques incorporating pixel current measurements

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Publication number Priority date Publication date Assignee Title
JP2020513601A (ja) * 2016-11-02 2020-05-14 プレシラブズ エスエー 検出装置、位置決めコード、および位置検出方法
JP7103664B2 (ja) 2016-11-02 2022-07-20 プレシラブズ エスエー 検出装置、位置決めコード、および位置検出方法
WO2019171716A1 (ja) * 2018-03-08 2019-09-12 浜松ホトニクス株式会社 光検出装置及び光検出方法
WO2019171717A1 (ja) * 2018-03-08 2019-09-12 浜松ホトニクス株式会社 光検出装置及び光検出方法
JP2019161296A (ja) * 2018-03-08 2019-09-19 浜松ホトニクス株式会社 光検出装置及び光検出方法
JP2019161295A (ja) * 2018-03-08 2019-09-19 浜松ホトニクス株式会社 光検出装置及び光検出方法
JP7060413B2 (ja) 2018-03-08 2022-04-26 浜松ホトニクス株式会社 光検出装置及び光検出方法
JP7082503B2 (ja) 2018-03-08 2022-06-08 浜松ホトニクス株式会社 光検出装置及び光検出方法
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Also Published As

Publication number Publication date
WO2003049190A1 (fr) 2003-06-12
CN1586008A (zh) 2005-02-23
CN100394606C (zh) 2008-06-11
EP1453098A4 (en) 2006-03-15
TWI294030B (enExample) 2008-03-01
EP1453098B1 (en) 2013-09-18
US7193197B2 (en) 2007-03-20
US20040195490A1 (en) 2004-10-07
KR20040071114A (ko) 2004-08-11
KR100903450B1 (ko) 2009-06-18
AU2002349455A1 (en) 2003-06-17
JPWO2003049190A1 (ja) 2005-04-21
TW200301352A (en) 2003-07-01
EP1453098A1 (en) 2004-09-01

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