TW200301352A - Light detection device, imaging device and device for depth capture - Google Patents

Light detection device, imaging device and device for depth capture Download PDF

Info

Publication number
TW200301352A
TW200301352A TW091135234A TW91135234A TW200301352A TW 200301352 A TW200301352 A TW 200301352A TW 091135234 A TW091135234 A TW 091135234A TW 91135234 A TW91135234 A TW 91135234A TW 200301352 A TW200301352 A TW 200301352A
Authority
TW
Taiwan
Prior art keywords
light
output
circuit
sensing
voltage
Prior art date
Application number
TW091135234A
Other languages
English (en)
Chinese (zh)
Other versions
TWI294030B (enExample
Inventor
Yukinobu Sugiyama
Haruyoshi Toyoda
Naohisa Mukozaka
Seiichiro Mizuno
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW200301352A publication Critical patent/TW200301352A/zh
Application granted granted Critical
Publication of TWI294030B publication Critical patent/TWI294030B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Measurement Of Optical Distance (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
TW091135234A 2001-12-05 2002-12-05 Light detection device, imaging device and device for depth capture TW200301352A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001371753 2001-12-05
JP2002064000 2002-03-08

Publications (2)

Publication Number Publication Date
TW200301352A true TW200301352A (en) 2003-07-01
TWI294030B TWI294030B (enExample) 2008-03-01

Family

ID=26624892

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091135234A TW200301352A (en) 2001-12-05 2002-12-05 Light detection device, imaging device and device for depth capture

Country Status (8)

Country Link
US (1) US7193197B2 (enExample)
EP (1) EP1453098B1 (enExample)
JP (1) JP4351057B2 (enExample)
KR (1) KR100903450B1 (enExample)
CN (1) CN100394606C (enExample)
AU (1) AU2002349455A1 (enExample)
TW (1) TW200301352A (enExample)
WO (1) WO2003049190A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3965049B2 (ja) * 2001-12-21 2007-08-22 浜松ホトニクス株式会社 撮像装置
WO2004065899A1 (ja) * 2003-01-22 2004-08-05 Hamamatsu Photonics K.K. 光検出装置
JP2004264332A (ja) * 2003-01-24 2004-09-24 Hamamatsu Photonics Kk 多重画像形成位置ずれ検出装置、画像濃度検出装置及び多重画像形成装置
JP4099413B2 (ja) * 2003-03-20 2008-06-11 浜松ホトニクス株式会社 光検出装置
JP4418720B2 (ja) * 2003-11-21 2010-02-24 キヤノン株式会社 放射線撮像装置及び方法、並びに放射線撮像システム
JP2005218052A (ja) 2004-02-02 2005-08-11 Hamamatsu Photonics Kk 光検出装置
JP4920178B2 (ja) 2004-06-24 2012-04-18 浜松ホトニクス株式会社 歪み検出システムおよび歪み検出方法
JP4425078B2 (ja) 2004-07-12 2010-03-03 浜松ホトニクス株式会社 エンコーダ
US7507595B2 (en) 2004-12-30 2009-03-24 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
JP2007081225A (ja) * 2005-09-15 2007-03-29 Asahi Kasei Electronics Co Ltd 赤外線センサ、および、その製造方法
JP4808557B2 (ja) 2006-07-04 2011-11-02 浜松ホトニクス株式会社 固体撮像装置
JP4795191B2 (ja) * 2006-10-04 2011-10-19 浜松ホトニクス株式会社 位置計測センサ、３次元位置計測装置、及び３次元位置計測方法
JP5034554B2 (ja) * 2007-02-27 2012-09-26 コニカミノルタホールディングス株式会社 相関演算装置、相関演算方法及びプログラム
JP2008216127A (ja) * 2007-03-06 2008-09-18 Konica Minolta Holdings Inc 距離画像生成装置、距離画像生成方法及びプログラム
JP5098369B2 (ja) * 2007-03-06 2012-12-12 コニカミノルタホールディングス株式会社 距離画像生成装置、距離画像生成方法及びプログラム
JP5028154B2 (ja) * 2007-06-20 2012-09-19 キヤノン株式会社 撮像装置及びその制御方法
EP2639781A1 (en) * 2012-03-14 2013-09-18 Honda Motor Co., Ltd. Vehicle with improved traffic-object position detection
JP6197291B2 (ja) * 2012-03-21 2017-09-20 株式会社リコー 複眼カメラ装置、及びそれを備えた車両
KR102223279B1 (ko) * 2014-07-08 2021-03-05 엘지전자 주식회사 측정장치 및 이를 구비하는 웨어러블 디바이스
WO2018083510A1 (en) 2016-11-02 2018-05-11 Precilabs Sa Detector device, positioning code and position detecting method
US10900776B2 (en) * 2018-02-06 2021-01-26 Saudi Arabian Oil Company Sensor device for distance offset measurements
JP7060413B2 (ja) * 2018-03-08 2022-04-26 浜松ホトニクス株式会社 光検出装置及び光検出方法
JP7082503B2 (ja) 2018-03-08 2022-06-08 浜松ホトニクス株式会社 光検出装置及び光検出方法
WO2024086308A1 (en) * 2022-10-20 2024-04-25 Quantum-Si Incorporated Optical stabilization techniques incorporating pixel current measurements

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2569045B2 (ja) 1987-04-24 1997-01-08 株式会社日立製作所 固体撮像装置
US5196929A (en) 1989-07-05 1993-03-23 Olympus Optical Co., Ltd. Display system of camera having tracking apparatus
JP2974809B2 (ja) * 1991-03-05 1999-11-10 オリンパス光学工業株式会社 固体撮像装置
JPH05284282A (ja) * 1992-04-02 1993-10-29 Matsushita Electric Ind Co Ltd イメージセンサ
JP3441761B2 (ja) * 1993-05-28 2003-09-02 キヤノン株式会社 イメージセンサ
JP2731115B2 (ja) * 1994-07-14 1998-03-25 シャープ株式会社 分割型受光素子
JPH08111821A (ja) * 1994-10-07 1996-04-30 Olympus Optical Co Ltd 固体撮像装置
JP3838665B2 (ja) 1995-08-11 2006-10-25 株式会社 東芝 Ｍｏｓ型固体撮像装置
JP4009761B2 (ja) * 1997-03-31 2007-11-21 株式会社ニコン 固体撮像素子
JP4013293B2 (ja) 1997-09-01 2007-11-28 セイコーエプソン株式会社 表示装置兼用型イメージセンサ装置及びアクティブマトリクス型表示装置
US6956605B1 (en) * 1998-08-05 2005-10-18 Canon Kabushiki Kaisha Image pickup apparatus
DE69923159T2 (de) * 1998-10-30 2005-12-22 Hamamatsu Photonics K.K., Hamamatsu Festkörperbildmatrix
US6642964B1 (en) * 1998-12-15 2003-11-04 Xerox Corporation Geometric configurations for photosites for reducing moire patterns
US6654056B1 (en) * 1998-12-15 2003-11-25 Xerox Corporation Geometric configurations for photosites for reducing Moiré patterns
JP3790057B2 (ja) * 1998-12-24 2006-06-28 日本放送協会 固体撮像素子
JP2000196711A (ja) 1998-12-28 2000-07-14 Matsushita Electric Ind Co Ltd ブラウザ―搭載携帯電話機
JP2000295635A (ja) * 1999-04-01 2000-10-20 Sony Corp 三次元撮像装置
JP2000298177A (ja) 1999-04-13 2000-10-24 Sumitomo Electric Ind Ltd 凍結検知センサ
JP3449468B2 (ja) 1999-05-06 2003-09-22 日本電気株式会社 固体撮像装置およびその駆動方法
JP4119052B2 (ja) * 1999-07-16 2008-07-16 浜松ホトニクス株式会社 光検出装置
JP4372955B2 (ja) * 2000-03-31 2009-11-25 富士フイルム株式会社 固体撮像装置および信号処理方法
JP4721380B2 (ja) * 2000-04-14 2011-07-13 キヤノン株式会社 固体撮像装置および撮像システム
JP2003204488A (ja) * 2001-10-30 2003-07-18 Mitsubishi Electric Corp 撮像装置および撮像装置を具備する携帯端末
US6853046B2 (en) * 2002-09-24 2005-02-08 Hamamatsu Photonics, K.K. Photodiode array and method of making the same

Also Published As

Publication number Publication date
WO2003049190A1 (fr) 2003-06-12
CN1586008A (zh) 2005-02-23
CN100394606C (zh) 2008-06-11
EP1453098A4 (en) 2006-03-15
TWI294030B (enExample) 2008-03-01
EP1453098B1 (en) 2013-09-18
US7193197B2 (en) 2007-03-20
US20040195490A1 (en) 2004-10-07
KR20040071114A (ko) 2004-08-11
KR100903450B1 (ko) 2009-06-18
AU2002349455A1 (en) 2003-06-17
JPWO2003049190A1 (ja) 2005-04-21
JP4351057B2 (ja) 2009-10-28
EP1453098A1 (en) 2004-09-01

Similar Documents

Publication Publication Date Title
TW200301352A (en) Light detection device, imaging device and device for depth capture
KR101398767B1 (ko) 축소된 픽셀 영역 이미지 센서
ES2218571T3 (es) Captador de imagenes en estado solido.
CN100438056C (zh) 固态图像拾取装置
JP5230726B2 (ja) ゲイン制御を備える画像センサ画素
JP2004530286A (ja) イメージ・センサ内での雑音レベルの軽減
US20040135063A1 (en) APS pixel with reset noise suppression and programmable binning capability
US10142570B1 (en) Imaging device and image acquisition device
TWI248215B (en) Photographing device
JP3906202B2 (ja) 固体撮像装置およびそれを利用した撮像システム
KR100494098B1 (ko) Cmos 이미지 센서
JP5959157B2 (ja) 空間ノイズに対して低感度の電磁放射検出デバイス
TWI413241B (zh) Solid-state imaging device
JP4099413B2 (ja) 光検出装置
WO2022070815A1 (ja) 撮像装置
JP2004264034A (ja) 光検出装置
CN113791420B (zh) 飞行时间传感器像素电路、结构及飞行时间传感器
US20060192262A1 (en) CMOS image sensor
JP4718169B2 (ja) Ｃｍｏｓ撮像デバイス回路
EP1712886B1 (en) Photodetector device
JP2015186217A (ja) 読出回路

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent