CN100394606C - 光探测装置、成像装置和测距图像捕捉装置 - Google Patents

光探测装置、成像装置和测距图像捕捉装置 Download PDF

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Publication number
CN100394606C
CN100394606C CNB028213327A CN02821332A CN100394606C CN 100394606 C CN100394606 C CN 100394606C CN B028213327 A CNB028213327 A CN B028213327A CN 02821332 A CN02821332 A CN 02821332A CN 100394606 C CN100394606 C CN 100394606C
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China
Prior art keywords
circuit
photaesthesia
voltage
pixels
detection device
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Expired - Lifetime
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CNB028213327A
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English (en)
Chinese (zh)
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CN1586008A (zh
Inventor
杉山行信
丰田晴义
向坂直久
水野诚一郎
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Measurement Of Optical Distance (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CNB028213327A 2001-12-05 2002-12-05 光探测装置、成像装置和测距图像捕捉装置 Expired - Lifetime CN100394606C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2001371753 2001-12-05
JP371753/2001 2001-12-05
JP064000/2002 2002-03-08
JP64000/2002 2002-03-08
JP2002064000 2002-03-08
PCT/JP2002/012770 WO2003049190A1 (fr) 2001-12-05 2002-12-05 Dispositif de detection de lumiere, dispositif de formation d'images et dispositif d'acquisition d'images a distance

Publications (2)

Publication Number Publication Date
CN1586008A CN1586008A (zh) 2005-02-23
CN100394606C true CN100394606C (zh) 2008-06-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028213327A Expired - Lifetime CN100394606C (zh) 2001-12-05 2002-12-05 光探测装置、成像装置和测距图像捕捉装置

Country Status (8)

Country Link
US (1) US7193197B2 (enExample)
EP (1) EP1453098B1 (enExample)
JP (1) JP4351057B2 (enExample)
KR (1) KR100903450B1 (enExample)
CN (1) CN100394606C (enExample)
AU (1) AU2002349455A1 (enExample)
TW (1) TW200301352A (enExample)
WO (1) WO2003049190A1 (enExample)

Cited By (1)

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US11378382B2 (en) 2018-03-08 2022-07-05 Hamamatsu Photonics K.K. Light detection device and light detection method

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JP3965049B2 (ja) * 2001-12-21 2007-08-22 浜松ホトニクス株式会社 撮像装置
WO2004065899A1 (ja) * 2003-01-22 2004-08-05 Hamamatsu Photonics K.K. 光検出装置
JP2004264332A (ja) * 2003-01-24 2004-09-24 Hamamatsu Photonics Kk 多重画像形成位置ずれ検出装置、画像濃度検出装置及び多重画像形成装置
JP4099413B2 (ja) * 2003-03-20 2008-06-11 浜松ホトニクス株式会社 光検出装置
JP4418720B2 (ja) * 2003-11-21 2010-02-24 キヤノン株式会社 放射線撮像装置及び方法、並びに放射線撮像システム
JP2005218052A (ja) 2004-02-02 2005-08-11 Hamamatsu Photonics Kk 光検出装置
JP4920178B2 (ja) 2004-06-24 2012-04-18 浜松ホトニクス株式会社 歪み検出システムおよび歪み検出方法
JP4425078B2 (ja) 2004-07-12 2010-03-03 浜松ホトニクス株式会社 エンコーダ
US7507595B2 (en) 2004-12-30 2009-03-24 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
JP2007081225A (ja) * 2005-09-15 2007-03-29 Asahi Kasei Electronics Co Ltd 赤外線センサ、および、その製造方法
JP4808557B2 (ja) 2006-07-04 2011-11-02 浜松ホトニクス株式会社 固体撮像装置
JP4795191B2 (ja) * 2006-10-04 2011-10-19 浜松ホトニクス株式会社 位置計測センサ、３次元位置計測装置、及び３次元位置計測方法
JP5034554B2 (ja) * 2007-02-27 2012-09-26 コニカミノルタホールディングス株式会社 相関演算装置、相関演算方法及びプログラム
JP2008216127A (ja) * 2007-03-06 2008-09-18 Konica Minolta Holdings Inc 距離画像生成装置、距離画像生成方法及びプログラム
JP5098369B2 (ja) * 2007-03-06 2012-12-12 コニカミノルタホールディングス株式会社 距離画像生成装置、距離画像生成方法及びプログラム
JP5028154B2 (ja) * 2007-06-20 2012-09-19 キヤノン株式会社 撮像装置及びその制御方法
EP2639781A1 (en) * 2012-03-14 2013-09-18 Honda Motor Co., Ltd. Vehicle with improved traffic-object position detection
JP6197291B2 (ja) * 2012-03-21 2017-09-20 株式会社リコー 複眼カメラ装置、及びそれを備えた車両
KR102223279B1 (ko) * 2014-07-08 2021-03-05 엘지전자 주식회사 측정장치 및 이를 구비하는 웨어러블 디바이스
WO2018083510A1 (en) 2016-11-02 2018-05-11 Precilabs Sa Detector device, positioning code and position detecting method
US10900776B2 (en) * 2018-02-06 2021-01-26 Saudi Arabian Oil Company Sensor device for distance offset measurements
JP7082503B2 (ja) 2018-03-08 2022-06-08 浜松ホトニクス株式会社 光検出装置及び光検出方法
WO2024086308A1 (en) * 2022-10-20 2024-04-25 Quantum-Si Incorporated Optical stabilization techniques incorporating pixel current measurements

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JPH08111821A (ja) * 1994-10-07 1996-04-30 Olympus Optical Co Ltd 固体撮像装置
JP2000196054A (ja) * 1998-12-24 2000-07-14 Nippon Hoso Kyokai <Nhk> 固体撮像素子
JP2000295635A (ja) * 1999-04-01 2000-10-20 Sony Corp 三次元撮像装置
JP2001036128A (ja) * 1999-07-16 2001-02-09 Hamamatsu Photonics Kk 光検出装置

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JPH08111821A (ja) * 1994-10-07 1996-04-30 Olympus Optical Co Ltd 固体撮像装置
JP2000196054A (ja) * 1998-12-24 2000-07-14 Nippon Hoso Kyokai <Nhk> 固体撮像素子
JP2000295635A (ja) * 1999-04-01 2000-10-20 Sony Corp 三次元撮像装置
JP2001036128A (ja) * 1999-07-16 2001-02-09 Hamamatsu Photonics Kk 光検出装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11378382B2 (en) 2018-03-08 2022-07-05 Hamamatsu Photonics K.K. Light detection device and light detection method
TWI782175B (zh) * 2018-03-08 2022-11-01 日商濱松赫德尼古斯股份有限公司 光檢測裝置及光檢測方法
US11619480B2 (en) 2018-03-08 2023-04-04 Hamamatsu Photonics K.K. Light detection device and light detection method
TWI806801B (zh) * 2018-03-08 2023-06-21 日商濱松赫德尼古斯股份有限公司 光檢測裝置

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Publication number Publication date
WO2003049190A1 (fr) 2003-06-12
CN1586008A (zh) 2005-02-23
EP1453098A4 (en) 2006-03-15
TWI294030B (enExample) 2008-03-01
EP1453098B1 (en) 2013-09-18
US7193197B2 (en) 2007-03-20
US20040195490A1 (en) 2004-10-07
KR20040071114A (ko) 2004-08-11
KR100903450B1 (ko) 2009-06-18
AU2002349455A1 (en) 2003-06-17
JPWO2003049190A1 (ja) 2005-04-21
TW200301352A (en) 2003-07-01
JP4351057B2 (ja) 2009-10-28
EP1453098A1 (en) 2004-09-01

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Granted publication date: 20080611