JP4347545B2 - 結晶化装置および結晶化方法 - Google Patents

結晶化装置および結晶化方法 Download PDF

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JP4347545B2
JP4347545B2 JP2002188845A JP2002188845A JP4347545B2 JP 4347545 B2 JP4347545 B2 JP 4347545B2 JP 2002188845 A JP2002188845 A JP 2002188845A JP 2002188845 A JP2002188845 A JP 2002188845A JP 4347545 B2 JP4347545 B2 JP 4347545B2
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phase shift
light
light intensity
shift mask
semiconductor film
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JP2004031840A (ja
JP2004031840A5 (cg-RX-API-DMAC7.html
Inventor
幸夫 谷口
正清 松村
弘高 山口
幹彦 西谷
晋 辻川
嘉伸 木村
正之 十文字
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株式会社 液晶先端技術開発センター
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Priority to JP2002188845A priority Critical patent/JP4347545B2/ja
Priority to TW092117034A priority patent/TWI300579B/zh
Priority to US10/603,771 priority patent/US7011709B2/en
Priority to CNA031471242A priority patent/CN1476059A/zh
Priority to KR1020030042974A priority patent/KR20040002802A/ko
Publication of JP2004031840A publication Critical patent/JP2004031840A/ja
Publication of JP2004031840A5 publication Critical patent/JP2004031840A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
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    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
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    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
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    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2002188845A 2002-06-28 2002-06-28 結晶化装置および結晶化方法 Expired - Fee Related JP4347545B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002188845A JP4347545B2 (ja) 2002-06-28 2002-06-28 結晶化装置および結晶化方法
TW092117034A TWI300579B (en) 2002-06-28 2003-06-23 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display
US10/603,771 US7011709B2 (en) 2002-06-28 2003-06-26 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display
CNA031471242A CN1476059A (zh) 2002-06-28 2003-06-27 晶化设备、用于晶化设备的光学部件、晶化方法、薄膜晶体管和显示器
KR1020030042974A KR20040002802A (ko) 2002-06-28 2003-06-28 결정화 장치, 결정화 장치에 사용되는 광학부재, 결정화방법,박막트랜지스터 및 디스플레이

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JP2002188845A JP4347545B2 (ja) 2002-06-28 2002-06-28 結晶化装置および結晶化方法

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JP2009143297A Division JP2009206528A (ja) 2009-06-16 2009-06-16 結晶化方法

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JP2004031840A JP2004031840A (ja) 2004-01-29
JP2004031840A5 JP2004031840A5 (cg-RX-API-DMAC7.html) 2005-10-20
JP4347545B2 true JP4347545B2 (ja) 2009-10-21

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US (1) US7011709B2 (cg-RX-API-DMAC7.html)
JP (1) JP4347545B2 (cg-RX-API-DMAC7.html)
KR (1) KR20040002802A (cg-RX-API-DMAC7.html)
CN (1) CN1476059A (cg-RX-API-DMAC7.html)
TW (1) TWI300579B (cg-RX-API-DMAC7.html)

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JP4347545B2 (ja) 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP4347546B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法および光学系
TWI301295B (en) * 2002-07-24 2008-09-21 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, thim film transistor and display apparatus
TW200519503A (en) * 2003-09-30 2005-06-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device and phase modulation element
US7374985B2 (en) * 2003-11-20 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
JP4664088B2 (ja) * 2004-02-17 2011-04-06 株式会社 液晶先端技術開発センター 光照射装置、光照射方法、結晶化装置、結晶化方法、および光変調素子
TW200541078A (en) * 2004-03-31 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
JP2006024753A (ja) * 2004-07-08 2006-01-26 Advanced Lcd Technologies Development Center Co Ltd 薄膜トランジスタの製造方法、薄膜トランジスタ、半導体装置の製造方法および表示装置
JP4711166B2 (ja) * 2004-08-03 2011-06-29 株式会社 液晶先端技術開発センター 結晶化装置、および結晶化方法
JP2006049481A (ja) * 2004-08-03 2006-02-16 Advanced Lcd Technologies Development Center Co Ltd 結晶化装置、結晶化方法、および位相変調素子
JP4607669B2 (ja) 2005-06-06 2011-01-05 株式会社 液晶先端技術開発センター レーザアニール用位相シフタ及びレーザアニール装置
TW200713460A (en) * 2005-09-22 2007-04-01 Adv Lcd Tech Dev Ct Co Ltd Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method
JP4956987B2 (ja) * 2005-12-16 2012-06-20 株式会社島津製作所 レーザー結晶化装置及び結晶化方法
US8676876B2 (en) * 2006-06-27 2014-03-18 International Business Machines Corporation Synchronizing an active feed adapter and a backup feed adapter in a high speed, low latency data communications environment
US8122144B2 (en) * 2006-06-27 2012-02-21 International Business Machines Corporation Reliable messaging using redundant message streams in a high speed, low latency data communications environment
US8296778B2 (en) 2006-06-27 2012-10-23 International Business Machines Corporation Computer data communications in a high speed, low latency data communications environment
JP5314857B2 (ja) * 2006-07-28 2013-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7994021B2 (en) 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2008270726A (ja) * 2007-03-23 2008-11-06 Advanced Lcd Technologies Development Center Co Ltd 結晶化装置、結晶化方法、デバイス、および光変調素子
JP2009272509A (ja) * 2008-05-09 2009-11-19 Advanced Lcd Technologies Development Center Co Ltd 光照射装置、結晶化装置、結晶化方法、およびデバイス
JP6218806B2 (ja) * 2012-04-17 2017-10-25 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 照明装置
US20130293858A1 (en) * 2012-05-04 2013-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Anisotropic phase shifting mask
CN105185694A (zh) * 2015-08-20 2015-12-23 京东方科技集团股份有限公司 多晶硅薄膜形成方法、掩膜版、多晶硅薄膜和薄膜晶体管
WO2020152796A1 (ja) * 2019-01-23 2020-07-30 ギガフォトン株式会社 レーザ加工装置及び被加工物の加工方法

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KR20040002802A (ko) 2004-01-07
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US7011709B2 (en) 2006-03-14
US20040005744A1 (en) 2004-01-08

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