WO2004008511A1 - 結晶化装置および結晶化方法 - Google Patents
結晶化装置および結晶化方法 Download PDFInfo
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- WO2004008511A1 WO2004008511A1 PCT/JP2003/003367 JP0303367W WO2004008511A1 WO 2004008511 A1 WO2004008511 A1 WO 2004008511A1 JP 0303367 W JP0303367 W JP 0303367W WO 2004008511 A1 WO2004008511 A1 WO 2004008511A1
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- Prior art keywords
- light
- phase shift
- shift mask
- light intensity
- intensity distribution
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- 230000010363 phase shift Effects 0.000 claims abstract description 86
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
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- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
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- Y10S117/904—Laser beam
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Definitions
- the present invention relates to a crystallization apparatus and a crystallization method.
- the present invention relates to an apparatus and a method for generating a crystallized semiconductor film by irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with laser light phase-modulated using a phase shift mask.
- liquid crystal display Liquid Crystal Display: L C
- the thin-film transistor (TFT) used for the switching element that controls the voltage applied to the pixel is made of amorphous silicon (amorphous silicon). It is broadly classified as poly-silicon.
- Polycrystalline silicon has a higher electron mobility than amorphous silicon.Therefore, when a transistor is formed using polycrystalline silicon, amorphous silicon becomes amorphous. There are advantages over using it, such as faster switching speeds, faster display response, and reduced design margins for other components. Also, when peripheral circuits such as driver circuits and DACs other than the display body are incorporated in the display, those peripheral circuits can be operated at higher speed.
- Polycrystalline silicon is composed of aggregates of crystal grains, but has a lower electron mobility than single-crystalline silicon.
- variation in the number of crystal grain boundaries in the channel portion becomes a problem. Therefore, recently, electronic transfer
- a crystallization method for producing single crystal silicon having a large grain size has been proposed.
- phase control Wholesale ELA Extra Laser Annealing
- the phase control ELA is described in detail in, for example, Surface Science Vol.21, No.5, pp.2 7 8-2 8 7, 2 0 0 0 ".
- a similar technique is also disclosed in Japanese Patent Application Laid-Open No. 2000-36069 (published on January 2, 2000).
- phase control EL II a reverse peak pattern where the light intensity is almost 0 at the part corresponding to the phase shift part of the phase shift mask (the light intensity is almost 0 at the center and the light intensity sharply increases toward the periphery) Then, light having the reverse peak pattern light intensity distribution is applied to the polycrystalline semiconductor film or the amorphous semiconductor film. As a result, a melting region is generated according to the light intensity distribution, and a crystal nucleus is formed at a portion that does not melt or a portion that solidifies first corresponding to a portion where the light intensity is almost 0, and the crystal nucleus is directed toward the surroundings.
- the lateral growth of the crystal (lateral growth) produces a single crystal with a large grain size.
- a conventional technique for generating a crystalline semiconductor film by irradiating an electric shifter laser beam to a phase shift mask brought close to and parallel to a semiconductor film is known.
- the proxy method due to ablation in the semiconductor film, The disadvantage was that the phase shift mask was contaminated, thus preventing good crystallization.
- the present applicant disposes an imaging optical system between the phase shift mask and the substrate to be processed (semiconductor film) and defocuses the semiconductor film with respect to the imaging optical system.
- a technology projection defocus method
- the imaging optical system is arranged so that the phase shift mask and the semiconductor film are optically conjugated to each other, and the number of apertures on the exit side of the imaging optical system is specified.
- a film generation technology projected NA method
- a KrF excimer laser light source that can obtain a large output is used, and an image formed by a single kind of optical material (for example, quartz glass) is used.
- an optical system is used.
- the oscillation wavelength band of the KrF excimer laser light is relatively wide (about 0.3 nm in full width at half maximum: see Fig. 5), and relatively large chromatic aberration occurs in the imaging optical system. I do.
- the required light intensity distribution can be obtained on the object to be processed such as a semiconductor film due to the influence of the broadband wavelength of the KrF excimer laser light and the chromatic aberration of the imaging optical system. Can't.
- the light intensity distribution in the middle part M between the mask pattern parts R is generally accompanied by irregular undulations (see Fig. 4).
- a crystal nucleus may be generated at a position where the light intensity is low (that is, an undesired position) in the undulation of the middle part M.
- the crystal nucleus may be formed at a desired position. Even if it is formed, the lateral growth started from this crystal nucleus toward the periphery may stop at the portion where the light intensity decreases in the middle part M, and growth of a large crystal may be hindered.
- An object of the present invention is to generate crystal nuclei at desired positions and realize crystal growth in a sufficient lateral direction from the crystal nuclei to generate crystals having a large grain size.
- An object of the present invention is to provide a crystallization apparatus and a crystallization method that can be used.
- a phase shift mask having at least two light phase shift portions
- An illumination system that emits light in a predetermined wavelength range that illuminates the phase shift mask
- An imaging optical system arranged in an optical path between the phase shift mask and the object to be processed, wherein the phase shift mask has a light intensity at a portion corresponding to the phase shift portion.
- the light from the illumination system is modulated so as to have a light intensity distribution having a reverse peak pattern portion that has a minimum peak value of, and that continuously increases as the intensity goes outward from the above.
- the phase shift mask and the object to be processed are arranged at a conjugate position of the imaging optical system,
- the imaging optical system is configured to form the light intensity distribution of a waveform pattern having no undulation of light intensity on the object to be processed in an intermediate portion between the reverse peak pattern portions.
- a crystallization apparatus having aberration according to a range.
- a light source that emits light having a wavelength in a predetermined range
- the light from the light source is provided so as to have at least two phase shift portions and to have a light intensity distribution having an inverse peak pattern portion having the smallest light intensity in a portion corresponding to these phase shift portions.
- the light in the predetermined range of wavelengths is changed so that the light irradiated to the object has a plurality of light components having different wavelengths, and the intensity of the undulations in the intermediate portion between the reverse peak pattern portions is changed.
- a phase shift mask is illuminated, and an inverse peak pattern portion having the smallest light intensity in a portion corresponding to at least two phase shift portions 1 and 2 of the phase shift mask.
- the phase shift mask in a predetermined wavelength range; : Illuminating with the light to make the phase shift mask and the object to be processed optically conjugate
- a light intensity distribution without intensity swell is formed on the object to be processed in an intermediate portion between the reverse peak pattern portions.
- FIG. 1 is a diagram schematically showing a configuration of a crystallization apparatus according to an embodiment of the present invention.
- FIG. 2 is a diagram schematically showing the internal configuration of the illumination system of FIG. 1, and FIGS. 3A and 3B are a plan view and a side view showing a phase shift mask used in the crystallization apparatus, respectively. is there.
- FIG. 4 is a diagram showing the light intensity distribution of the inverse peak pattern obtained by the projection defocus method and the projection NA method.
- FIG. 5 is a diagram showing an oscillation wavelength distribution of a KrF excimer laser light source in a numerical example of the present embodiment.
- 6A and 6B are diagrams illustrating the effect of chromatic aberration of the imaging optical system according to the present embodiment.
- FIG. 7 is a diagram showing each light intensity pattern formed on the substrate to be processed by the light component of each wavelength in the numerical example of the present embodiment.
- FIG. 8 is a diagram illustrating a light intensity distribution finally formed on the substrate to be processed in the numerical example of the present embodiment.
- FIGS. 9A and 9B are diagrams for explaining the configuration and operation of an ethanol for converting a laser beam having a broadband wavelength into light components having a plurality of different wavelengths in different modifications of the present embodiment.
- FIGS. 10A and 10B show the light in the modification of the present embodiment.
- FIG. 3 is a diagram illustrating an oscillation wavelength distribution of a source and a point image formed by a plurality of wavelength lights.
- FIG. 11 is a diagram showing respective light intensity patterns formed on a substrate to be processed by light components having different wavelengths in a modification of the present embodiment.
- FIG. 12 is a diagram showing a light intensity distribution finally formed on a substrate to be processed in a modification of the present embodiment.
- FIGS. 13A to 13E are process cross-sectional views showing steps of manufacturing an electronic device using the crystallization apparatus of the present embodiment.
- FIG. 1 is a diagram schematically illustrating a configuration of a crystallization apparatus according to an embodiment of the present invention
- FIG. 2 is a diagram schematically illustrating an internal configuration of the illumination system in FIG.
- the crystallization apparatus of the present embodiment includes an illumination system 2 that illuminates a phase shift mask 1.
- the illumination system 2 includes, for example, a KrF excimer laser light source 2a that supplies laser light having a wavelength of 248 nm, a beam expander 2b that is sequentially arranged on the emission side of the light source, 1st fly eye lens 2c, 2nd fly eye lens 2e, 1st condenser optical system 2d, 2nd fly eye lens 2e, and 2nd condenser optical system 2 f and.
- the laser light supplied from the light source 2a is expanded to a predetermined diameter via a beam expander 2b, and then enters the first fly-eye lens 2c.
- a plurality of small light sources are formed on the rear focal plane of the first fly-eye lens 2c.
- the light beam from the lens illuminates the incident surface of the second fly-eye lens 2e in a superimposed manner through the first condenser optical system 2d.
- more small light sources are formed on the rear focal plane of the second fly-eye lens 2e than on the rear focal plane of the first fly-eye lens 2c.
- the light beams from these small light sources illuminate the phase shift mask 1 in a superimposed manner via the second condenser optical system 2f.
- the first laila eye lens 2c and the first condenser optical system 2d constitute a first homogenizer, and the first homogenizer uses the first homogenizer to measure the intensity with respect to the incident angle on the phase shift mask 1. Uniformity is achieved. Also, the second fly eye lens 2 e and the second condenser optical system 2 f constitute a second homogenizer, and the second homogenizer is used to position the in-plane on the phase shift mask. The uniformity of the strength is achieved. In this way, the illumination system irradiates the phase shift mask 1 with light having a substantially uniform light intensity distribution.
- the laser light phase-modulated by the phase shift mask 1 is applied to the substrate 4 via the imaging optical system 3.
- the phase shift mask 1 and the substrate to be processed 4 are arranged at optically conjugate positions of the imaging optical system 3.
- the substrate 4 to be processed is formed, for example, by sequentially forming a base film and an amorphous silicon film on a liquid crystal display plate glass by a chemical vapor deposition method. can get.
- the substrate 4 to be processed is held at a predetermined position on the substrate stage 5 by vacuum chucking or electrostatic chucking. This substrate stage can be moved in the X, Y and Z directions by a driving mechanism (not shown).
- 3A and 3B are diagrams schematically showing the configuration of the phase shift mask.
- the phase shift mask is provided with regions having mutually different thicknesses on a transparent medium, for example, a quartz base material, and a region between these regions is provided.
- a transparent medium for example, a quartz base material
- the incident laser beam is diffracted and interfered to give a periodic spatial distribution to the intensity of the incident laser beam.
- the phase shift mask 1 has two types of slit shapes alternately repeated in one direction (horizontal direction in FIG. 3A). It has phase regions 1a and 1b. Here, both regions are configured so that a phase difference of 180 ° of light is given between the transmitted light of the first phase region la and the transmitted light of the second phase region 1b. ing.
- the phase shift mask 1 is made of quartz glass having a refractive index of 1.5 with respect to light having a wavelength of 2488 nm, as can be understood from FIG.
- a step of 248 nm is formed between the first phase region 1 a and the second phase region 1. That is, there is a difference in thickness of 2488 nm between the two regions 1a and 1b.
- the boundary between the first phase region 1a and the second phase region 1b constitutes a phase shift portion lc.
- the projection defocus method (or the projection NA method) is used.
- the substrate 4 to be processed is disposed at the defocus position with respect to the imaging optical unit (or the number of apertures on the exit side of the imaging optical system is specified).
- the number of apertures on the exit side of the imaging optical system is specified.
- This light intensity distribution has a reverse peak value at which the light intensity is minimum, here almost 0, at a position corresponding to each phase shift portion 1c of the phase shift mask 1, and from this reverse peak value, It has a characteristic that the light intensity increases one-dimensionally and continuously toward the periphery, that is, to the first phase region 1a and the second phase region.
- the light intensity distribution at an intermediate portion M between two adjacent inverted peak pattern portions R formed corresponding to two adjacent phase shift portions 1 c is irregular. (A wave-like distribution that repeats the increase and decrease of the light intensity).
- a crystal nucleus be generated at a position where the inclination is large in the light intensity distribution of the reverse peak pattern portion (a position below a certain intensity indicated by reference numeral 11).
- the crystal nucleus is located at a position where the light intensity of the undulation is low (ie, at an undesired position indicated by reference numeral 12). May occur.
- the growth in the lateral direction starting from the crystal nucleus toward the periphery causes the light intensity to decrease at the boundary between the reverse peak pattern portion R and the intermediate portion M. Stop at part L.
- the lateral growth from the crystal nucleus shows that the width of the reverse peak pattern is the width W (the distance between the bases of the reverse peak pattern portion; here, the point where the intensity first changes from increasing to decreasing, or (Distance between neighbors). This prevents the growth of sufficiently large crystals.
- the width W of the reverse peak pattern portion is assumed to be.
- the distance between the image plane of the imaging optical system 3 and the substrate 4 to be processed is assumed.
- the distance that is, the amount of defocus
- the width W of the inverse peak pattern portion is about the same as the resolution of the imaging optical system. .
- the imaging optical system 3 is formed of a single type of optical material (for example, quartz glass), relatively large chromatic aberration occurs.
- the amount of chromatic aberration (generally, the amount of wavefront aberration) of the imaging optical system 3 is defined according to the oscillation wavelength band of the laser beam supplied from the KrF excimer laser light source 2a. Accordingly, the substrate to be processed (semiconductor film) 4 can be irradiated with light having a light intensity distribution having an inverted peak pattern portion without light intensity undulation in the middle portion.
- FIG. 5 is a diagram illustrating an oscillation wavelength distribution of a KrF excimer laser light source in a numerical example of the present embodiment.
- the horizontal axis shows the position of the length obtained by subtracting 248 nm from the wavelength (unit: nm), and the vertical axis shows the oscillation intensity (relative value).
- the laser light emitted from the KrF excimer laser light source 2a has a Gaussian intensity distribution as a whole.
- the center wavelength of the laser light; I is 2485.55 nm
- the full width at half maximum of the oscillation wavelength distribution is about 0.3 nm (half width at half maximum ⁇ ⁇ 0.15 nm).
- FIG. 6A a description will be given of the shift of the imaging position due to the chromatic aberration of the imaging optical system 3.
- a light ray from one point on the optical axis O of the phase shift mask 1 passes through the imaging optical system 3 without depending on the wavelength. Thereafter, the light is converged on one point on the optical axis O of the surface 4a of the substrate 4 to be processed to form a point image.
- chromatic aberration occurs in the imaging optical system 3 as shown in FIG. 6A, light rays from one point on the optical axis O of the phase shift mask 1 are output as shown in FIG.
- the light beam 13 having the center wavelength is focused on the optical axis O at the surface 4a of the substrate 4 to be processed, while the light beam 14 having a wavelength shorter than the center wavelength is focused on the surface 4a of the substrate 4 to be processed.
- the light is condensed on the optical axis O, and a ray 15 having a wavelength longer than the center wavelength is below the surface 4 a of the substrate 4 to be processed (imaging). (On the side opposite to the image optical system side).
- the phase shift mask 1 The light from one point on the optical axis of the target substrate 4 has an image defocused so as to extend along the optical axis O as shown by the hatched portion of the ellipse in FIG. 6B. 4 Form an image on a.
- the imaging optical system 3 is a telecentric optical system on both sides, the amount of blur is almost equal at all points on the flat surface 4a of the substrate 4 to be processed, and Out of focus along the parallel direction.
- the surface 4 of the substrate 4 is a combination (composite) of the light intensity patterns formed by the light beams of each wavelength.
- Table 1 below shows the wavelength shift amount ( nm ) obtained by subtracting the center wavelength from the wavelength of each light ray in the numerical example of the present embodiment, and the wavelength shift amount ( nm ) generated for each light ray due to the chromatic aberration of the imaging optical system 3. It shows the relationship with the amount of longitudinal aberration (defocus amount: ⁇ ). Referring to Table 1, it can be seen that the wavelength shift amount and the longitudinal aberration amount are almost proportional. The relationship shown in Table 1 is a result obtained by calculation assuming that the imaging optical system 3 is a thin lens, and this relationship is obtained in an actual imaging optical system 3 consisting of a combination of multiple lenses. Holds in general. Four
- FIG. 7 is a diagram showing respective light intensity patterns formed on the substrate to be processed by light beams of each wavelength in the numerical example of the present embodiment.
- FIG. 8 is a diagram showing a light intensity distribution finally formed on the processing target substrate 4 in the numerical example of the present embodiment in relation to a phase shift mask.
- reference numeral 21 denotes a light ray having a wavelength coincident with the center wavelength ⁇ (solid line)
- reference numeral 22 denotes a light ray having a wavelength shifted by ⁇ 0.05 nm with respect to the center wavelength (dashed-dotted line).
- Reference numeral 23 denotes a center wavelength; a ray shifted by ⁇ 0.1 nm with respect to L (broken line); reference numeral 24 denotes a wavelength shifted by ⁇ 0.15 nm with respect to the center wavelength.
- a light ray (two-dot chain line), reference numeral 25 is a light ray (chain line) shifted by ⁇ 0.2 nm from the center wavelength, and a reference numeral 26 is a center wavelength; .
- Light rays whose wavelengths are shifted by 25 nm (dashed three-dot lines) respectively correspond to each other.
- the light intensity pattern formed by the light beam 21 having the wavelength equal to the center wavelength; I corresponds to the light intensity distribution in the reverse peak pattern portion and the middle portion shown in FIG.
- the minimum value of the reverse peak pattern part increases to a certain extent, but the degree to which the light intensity sharply decreases from the reverse peak pattern part to the middle part decreases.
- the height of the positive peak notation located on both sides of the reverse peak pattern part becomes lower.
- the light intensity patterns formed by the light beams of the respective wavelengths are superimposed on each other to form a final light intensity pattern on the surface 4a of the substrate 4 to be processed.
- the obtained light intensity distribution is obtained.
- Light having a light intensity pattern distribution having a positive peak pattern (a mountain-shaped pattern) in which the light intensity increases substantially monotonically is applied to the surface 4 a of the substrate 4 to be processed.
- a crystal nucleus can be generated at a position (ie, at a position where the intensity is below a certain value).
- the light intensity slightly increases toward the center of the middle portion M. Is monotonically increasing, so that lateral growth starting from the crystal nucleus toward the periphery is not limited to the range of the width of the reverse peak pattern portion.
- crystal nuclei can be generated at desired positions, and sufficient lateral growth from the crystal nuclei can be realized to achieve large grain crystallization.
- a semiconductor film can be generated.
- the width W of the inverse peak pattern portion formed when the generated longitudinal aberration has the maximum value D is generally used as a method for obtaining a so-called Becke line diffraction pattern. According to the understood theory, it is expressed by the following equation (1).
- the center wavelength of the laser light supplied from the light source 2a is the center wavelength of the laser light supplied from the light source 2a.
- the width W of each reverse peak pattern part must be inverse peak. It is desirable that the pitch X be the same as the pitch X of the pattern part (see Fig. 8). Specifically, the light intensity pattern corresponding to the light ray 24 in FIG. 7 is close to this condition. In addition, considering that the width W of the reverse peak pattern portion is sufficiently close to the pitch X of the reverse peak pattern portion to some extent, the width W of the reverse peak and the pitch X of the reverse peak pattern portion are considered. It is desirable that the following equation (2) be established between and.
- conditional expression (5) is obtained for the maximum value D of the longitudinal aberration that occurs.
- the maximum value D of the longitudinal aberration is 9 7 zm corresponding to the maximum wavelength or the minimum wavelength
- the amount of longitudinal aberration corresponding to the half width is 5 8;
- conditional expression (5) is satisfied.
- the maximum value D of the longitudinal aberration corresponding to the half width can be expressed by the following equation (6).
- conditional equation (4) can be modified as shown in the following conditional equation (7).
- Ni will this Yo, in this embodiment, slightly light intensity One suited to the center of the intermediate portion is increased monotonously In order to obtain a pattern light intensity distribution, it is desirable that conditional expression (4) or conditional expression (7) is satisfied.
- the KrF excimer laser light source 2a supplies laser light having a Gaussian intensity distribution as a whole, but the KrF excimer laser light source 2a is different from each other at a plurality of different predetermined wavelengths. Variations that provide light with maximum intensity are also possible.
- this modified example will be described focusing on differences from the above-described embodiment.
- FIGS. 9A and 9B are diagrams illustrating the configuration and operation of different etalons that convert laser light having a broadband wavelength into light having a plurality of different wavelengths in a modification of the present embodiment.
- the etalon shown in FIG. 9A is an air gap type etalon, and the etalon shown in FIG. 9B is a solid type.
- 1OA and 10B are diagrams showing an oscillation wavelength distribution of a light source and a point image formed by a plurality of wavelength lights in a modification of the present embodiment.
- the etalon 28 shown in FIG. 9A is composed of a pair of parallel plane plates 28 a and 28 b arranged through a predetermined gap t. , 28b are made of transparent glass.
- etalon 28 of such a configuration Light transmitted through the first plane plate 28a, e.g., a laser beam, is incident on and / or reflected by the entrance surface of the second plane plate 28b, The light is finally emitted as light having a plurality of light components having different wavelengths.
- the peak spacing ⁇ ⁇ of a plurality (four in this modification) of discrete wavelength light formed by etalon 28 based on the incident laser light of a broadband wavelength is given by the following equation: (8).
- ⁇ is the center wavelength of the broadband wavelength laser light originally supplied by the light source 2a, and is 28.5 nm in this modification.
- the light beam having the four peak wavelengths is composed of the first wavelength light component 1 having a center wavelength of 24.88.3111, and the second wavelength light component having a center wavelength power of S28.48.4311111. It is composed of a component 81, a third wavelength light component B2 having a center wavelength of ⁇ 28.45.66 nm, and a fourth wavelength light component A2 having a center wavelength of 248.7 nm.
- the first-wavelength light component A 1 is located above the surface 4 a of the substrate 4 to be processed (on the side of the imaging optical system 3). Chromatic aberration Thus, a defocused point image C 1 is formed.
- the second wavelength light component B 1 forms a defocused point image D 1 between the surface 4 a of the substrate 4 to be processed and the point image C 1.
- the third wavelength light component B 2 forms a defocused point image D 2 at a position symmetrical to the point image D 1 with respect to the surface 4 a of the substrate to be processed.
- the fourth wavelength light component A 2 forms a defocused point image C 2 at a position symmetrical to the point image C 1 with respect to the surface 4 a of the substrate 4 to be processed.
- These point images (C 1, D 1, D 2, C 2) have the same distance from each other and have an elliptical shape showing an image that is out of focus in FIG. 6 so as to be elongated in the optical axis direction. It is included in the elliptical area (shown by the broken line in the figure) corresponding to the shaded area of.
- the light intensity distribution finally formed on the surface 4 a of the substrate 4 to be processed is the light intensity distribution formed by each wavelength light component (A 1 B 1, B 2, A 2).
- the pattern is superimposed (combined).
- a reflective film 2 is formed on both sides of a transparent parallel substrate 29 having a thickness t. It can be understood that the solid type etalon in which 9a is formed can also be obtained.
- FIG. 11 is a diagram showing each light intensity pattern formed on the substrate to be processed by the four wavelength light components (Al, B1, B2, A2).
- the minimum value of the reverse peak pattern portion increases, but the reverse peak pattern portion increases. The light intensity does not decrease from the center to the middle part, and the swell of the light intensity in the middle part does not exist.
- FIG. 12 is a view showing a light intensity distribution finally formed on the substrate 4 to be processed on which the light components shown in FIG. 11 are synthesized.
- the light intensity distribution in which the light intensity does not swell in the middle portion M between the reverse peak pattern portions R and the light intensity monotonically increases toward the center of the middle portion M is observed. It is finally formed on the surface 4 a of the processing substrate 4. Therefore, a crystal nucleus can be generated at a position with a large inclination in the light intensity distribution of the reverse peak pattern portion R without generating a crystal nucleus in the intermediate portion M.
- the crystal growth in the lateral direction starting from the crystal nucleus toward the periphery shows the opposite peak pattern portion. It is easy to reach almost the center of the middle part without being limited to the range of the width dimension.
- a crystal nucleus can be generated at a desired position, and sufficient lateral crystal growth from the crystal nucleus can be achieved. In some cases, crystallized semiconductor films with large grain sizes have been realized.
- the degree of design freedom concerning the number of peak shapes of each wavelength light and the like is higher than in the above-described embodiment, it is possible to face the center of the intermediate portion and It is easier than in the above-described embodiment to achieve a light intensity distribution in which the light intensity clearly increases monotonically.
- laser light of a broadband wavelength is converted into light of a plurality of wavelengths using an etalon.
- the present invention is not limited to this.
- a plurality of laser beams that supply light having different center wavelengths are generally obtained.
- a light source unit and a synthesizing unit for synthesizing a plurality of laser beams supplied from the plurality of light source units it is possible to obtain a desired plurality of wavelength lights.
- a multilayer mirror that reflects only light of a specific wavelength into the illumination optical path of laser light of a broadband wavelength it is possible to obtain light of a desired wavelength. it can. In this case, as is evident from Fig. 7, a significant improvement can be obtained by removing only the center wavelength that contributes most to the undulation of the intensity distribution.
- a phase shift mask 1 configured by a one-dimensional array of two types of slit-shaped phase regions corresponding to phases of 0 and ⁇ is used.
- the force S is composed of, but not limited to, a two-dimensional array of four rectangular regions corresponding to the phases 0, ⁇ / 2, ⁇ , and 3 ⁇ 2.
- a phase shift mask can also be used. In general, there is an intersection (phase shift portion) composed of three or more phase shift lines, and the integral of the complex transmittance in a circular region centered on this intersection is almost zero.
- a phase shift mask can be used. In addition, it has a circular step corresponding to the phase shift part.
- phase shift mask set so that the difference is ⁇ can also be used.
- the light intensity distribution can be calculated at the design stage, it is desirable to observe and confirm the light intensity distribution on the actual surface to be processed (exposed surface). To do so, the surface to be processed may be enlarged by an optical system and input by an image sensor such as a CCD. If the light used is ultraviolet light, the optical system is restricted, and a fluorescent plate may be provided on the surface to be processed to convert the light into visible light.
- FIGS. 13A to 13E Next, a method for manufacturing an electronic device using the manufacturing apparatus and method of the present invention will be described with reference to FIGS. 13A to 13E.
- the base film 31 is formed on a rectangular insulating substrate 30 (for example, glass, quartz glass, plastic, polyimide, etc.).
- a rectangular insulating substrate 30 for example, glass, quartz glass, plastic, polyimide, etc.
- an amorphous semiconductor film 3 2 e.g. 2 to a thickness of 5 O nm (Si, Ge, SiGe, etc. of about 100 nm) is formed by a chemical vapor deposition method or a sputter method.
- an excimer laser 33 for example, K?
- 6.1 is irradiated on a part or the entire surface of the amorphous semiconductor film 32.
- the apparatus and method described in the above embodiment are used for excimer laser irradiation.
- the substance of the amorphous semiconductor film 32 is crystallized into the polycrystalline semiconductor film 34 as shown in FIG. 13B.
- the polycrystalline semiconductor film 34 formed in this way is a polycrystalline or single crystal with a controlled grain size and a large grain size, as compared to a polycrystalline semiconductor film using a conventional manufacturing apparatus. Is converted to a nitride semiconductor film.
- the single-crystallized semiconductor film 34 is processed into an island-shaped semiconductor film 35, and as shown in FIG.
- a gate insulating film 36 is formed.
- An SiO 2 film having a thickness of 2 O nm or 100 nm is formed on the base film 31 and the semiconductor film 35 by using a chemical vapor deposition method or a sputtering method.
- a gate electrode 37 (for example, a silicide or MOW) is formed on the goat film 36 at a position corresponding to the semiconductor film 35.
- impurity ions 38 (Rin for N-channel transistors and Boron for P-channel transistors) Is injected into the semiconductor film 35 to make the film N-type or P-type.
- the entire device is annealed in a nitrogen atmosphere (for example, at 450 ° C. for 1 hour) to activate impurities in the semiconductor film 35.
- the semiconductor film 35 has a source 41 and a drain 42 with a high impurity concentration, and a channel region with a low impurity concentration corresponding to the gate electrode 37 located therebetween. It becomes 4 0.
- an interlayer insulating film 39 is formed on the gate film 36. Then, contact holes are made in the interlayer insulating film 39 and the gate film 36 at locations corresponding to the source 41 and the drain 42, and thereafter the source 41 and the drain 42 are formed. A source electrode 43 and a drain electrode 44 electrically connected to each other through a contact hole are formed on the interlayer insulating film 3 using a film forming and patterning technique.
- the thin film transistor thus formed forms a channel 40 region. Since the semiconductor is processed by the laser beam irradiation technique described in Figs. 13A and 13B, it can be understood that it is a polycrystal or single crystal with a large grain size. Right. Therefore, such a transistor has a higher switching speed than a transistor using an amorphous semiconductor which is not subjected to laser light treatment.
- a polycrystalline or single-crystallized transistor can be designed to have the functions of an integrated circuit such as a liquid crystal drive function, memory (SRAM, DRAM), and CPU. Circuits requiring a withstand voltage are formed on an amorphous semiconductor film and need to have high mobility. For example, transistors such as a dripper circuit are polycrystalline or monocrystalline.
- the inverse peak pattern is formed by the cooperation of the light source that supplies light over a predetermined wavelength range and the imaging optical system having an aberration corresponding to this wavelength range. There is no portion where the light intensity decreases at the boundary between the portion and the intermediate portion, and an inverse peak pattern light intensity distribution in which the light intensity monotonically increases toward the center of the intermediate portion is formed on the substrate to be processed.
- a crystal nucleus can be generated at a desired position, and sufficient lateral growth from the crystal nucleus can be realized to produce a crystallized semiconductor film having a large grain size.
- the object to be crystallized is the substrate to be processed, but the object to be processed is an amorphous or polycrystalline layer formed on the substrate as described in the embodiment. It can be understood that it is a membrane.
- the present invention also includes the case where the substrate itself is crystallized. In rare cases, the substrate is the object to be processed.
- the material to be crystallized is not limited to silicon, but may be other semiconductors such as Ge and SiGe, for example, and may have crystallinity.
- the material is not limited to a semiconductor, but may be a metal, for example.
- crystallization refers to improving the degree of crystallinity.
- amorphous substance a polycrystalline substance or a single crystal substance, or a polycrystalline substance
- it is said that it is converted into a single crystal substance.
- the phase shift portion of the phase shift mask is not limited to a boundary line or a point between different phase regions, but also includes a portion near these lines or points.
- the phase shift portion becomes a light-shielding region. That is, an inverse peak pattern portion having a minimum intensity peak value corresponding to the light-shielding region is formed.
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Abstract
Description
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JP2004521125A JPWO2004008511A1 (ja) | 2002-07-11 | 2003-03-19 | 結晶化装置および結晶化方法 |
KR1020047017072A KR100608102B1 (ko) | 2002-07-11 | 2003-03-19 | 결정화 장치 및 결정화 방법 |
US10/958,396 US7572335B2 (en) | 2002-07-11 | 2004-10-06 | Crystallization apparatus and crystallization method |
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Cited By (3)
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JP2005244195A (ja) * | 2004-01-27 | 2005-09-08 | Advanced Lcd Technologies Development Center Co Ltd | 光照射装置、結晶化装置、結晶化方法、デバイス、および光学変調素子 |
JP2005244194A (ja) * | 2004-01-27 | 2005-09-08 | Advanced Lcd Technologies Development Center Co Ltd | 光照射装置、結晶化装置、結晶化方法、およびデバイス |
US7813022B2 (en) | 2004-02-17 | 2010-10-12 | Advanced Lcd Technologies Development Center Co., Ltd. | Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, device, and light modulation element |
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KR100992120B1 (ko) * | 2003-03-13 | 2010-11-04 | 삼성전자주식회사 | 규소 결정화 시스템 및 규소 결정화 방법 |
JP4716663B2 (ja) * | 2004-03-19 | 2011-07-06 | 株式会社リコー | レーザ加工装置、レーザ加工方法、及び該加工装置又は加工方法により作製された構造体 |
JP2008524662A (ja) * | 2004-12-22 | 2008-07-10 | カール・ツアイス・レーザー・オプティクス・ゲーエムベーハー | 線ビームを生成するための光学照射系 |
EP1760762B1 (en) * | 2005-09-06 | 2012-02-01 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Device and method for selecting an emission area of an emission pattern |
JP2008283069A (ja) * | 2007-05-11 | 2008-11-20 | Sony Corp | 照射装置、半導体装置の製造装置、半導体装置の製造方法および表示装置の製造方法 |
CN104775161B (zh) * | 2015-03-04 | 2017-10-13 | 信利(惠州)智能显示有限公司 | 激光晶化光路系统、低温多晶硅薄膜及其制备方法 |
JP7004707B2 (ja) * | 2017-05-24 | 2022-01-21 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
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JP2005244195A (ja) * | 2004-01-27 | 2005-09-08 | Advanced Lcd Technologies Development Center Co Ltd | 光照射装置、結晶化装置、結晶化方法、デバイス、および光学変調素子 |
JP2005244194A (ja) * | 2004-01-27 | 2005-09-08 | Advanced Lcd Technologies Development Center Co Ltd | 光照射装置、結晶化装置、結晶化方法、およびデバイス |
JP4499578B2 (ja) * | 2004-01-27 | 2010-07-07 | 株式会社 液晶先端技術開発センター | 光照射装置、結晶化装置、結晶化方法 |
JP4567474B2 (ja) * | 2004-01-27 | 2010-10-20 | 株式会社 液晶先端技術開発センター | 光照射装置、結晶化装置、および結晶化方法 |
US7813022B2 (en) | 2004-02-17 | 2010-10-12 | Advanced Lcd Technologies Development Center Co., Ltd. | Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, device, and light modulation element |
Also Published As
Publication number | Publication date |
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KR20040101553A (ko) | 2004-12-02 |
CN100352005C (zh) | 2007-11-28 |
US20050048383A1 (en) | 2005-03-03 |
KR100608102B1 (ko) | 2006-08-02 |
CN1650402A (zh) | 2005-08-03 |
US7572335B2 (en) | 2009-08-11 |
TW200401333A (en) | 2004-01-16 |
TWI288948B (en) | 2007-10-21 |
JPWO2004008511A1 (ja) | 2005-11-10 |
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