JP2004031840A5 - - Google Patents

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Publication number
JP2004031840A5
JP2004031840A5 JP2002188845A JP2002188845A JP2004031840A5 JP 2004031840 A5 JP2004031840 A5 JP 2004031840A5 JP 2002188845 A JP2002188845 A JP 2002188845A JP 2002188845 A JP2002188845 A JP 2002188845A JP 2004031840 A5 JP2004031840 A5 JP 2004031840A5
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JP
Japan
Prior art keywords
phase shift
light
shift mask
diverging
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002188845A
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English (en)
Japanese (ja)
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JP2004031840A (ja
JP4347545B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2002188845A external-priority patent/JP4347545B2/ja
Priority to JP2002188845A priority Critical patent/JP4347545B2/ja
Priority to TW092117034A priority patent/TWI300579B/zh
Priority to US10/603,771 priority patent/US7011709B2/en
Priority to CNA031471242A priority patent/CN1476059A/zh
Priority to KR1020030042974A priority patent/KR20040002802A/ko
Publication of JP2004031840A publication Critical patent/JP2004031840A/ja
Publication of JP2004031840A5 publication Critical patent/JP2004031840A5/ja
Publication of JP4347545B2 publication Critical patent/JP4347545B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002188845A 2002-06-28 2002-06-28 結晶化装置および結晶化方法 Expired - Fee Related JP4347545B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002188845A JP4347545B2 (ja) 2002-06-28 2002-06-28 結晶化装置および結晶化方法
TW092117034A TWI300579B (en) 2002-06-28 2003-06-23 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display
US10/603,771 US7011709B2 (en) 2002-06-28 2003-06-26 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display
CNA031471242A CN1476059A (zh) 2002-06-28 2003-06-27 晶化设备、用于晶化设备的光学部件、晶化方法、薄膜晶体管和显示器
KR1020030042974A KR20040002802A (ko) 2002-06-28 2003-06-28 결정화 장치, 결정화 장치에 사용되는 광학부재, 결정화방법,박막트랜지스터 및 디스플레이

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002188845A JP4347545B2 (ja) 2002-06-28 2002-06-28 結晶化装置および結晶化方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009143297A Division JP2009206528A (ja) 2009-06-16 2009-06-16 結晶化方法

Publications (3)

Publication Number Publication Date
JP2004031840A JP2004031840A (ja) 2004-01-29
JP2004031840A5 true JP2004031840A5 (cg-RX-API-DMAC7.html) 2005-10-20
JP4347545B2 JP4347545B2 (ja) 2009-10-21

Family

ID=29996830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002188845A Expired - Fee Related JP4347545B2 (ja) 2002-06-28 2002-06-28 結晶化装置および結晶化方法

Country Status (5)

Country Link
US (1) US7011709B2 (cg-RX-API-DMAC7.html)
JP (1) JP4347545B2 (cg-RX-API-DMAC7.html)
KR (1) KR20040002802A (cg-RX-API-DMAC7.html)
CN (1) CN1476059A (cg-RX-API-DMAC7.html)
TW (1) TWI300579B (cg-RX-API-DMAC7.html)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4347545B2 (ja) 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP4347546B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法および光学系
TWI301295B (en) * 2002-07-24 2008-09-21 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, thim film transistor and display apparatus
TW200519503A (en) * 2003-09-30 2005-06-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device and phase modulation element
US7374985B2 (en) * 2003-11-20 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
JP4664088B2 (ja) * 2004-02-17 2011-04-06 株式会社 液晶先端技術開発センター 光照射装置、光照射方法、結晶化装置、結晶化方法、および光変調素子
TW200541078A (en) * 2004-03-31 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
JP2006024753A (ja) * 2004-07-08 2006-01-26 Advanced Lcd Technologies Development Center Co Ltd 薄膜トランジスタの製造方法、薄膜トランジスタ、半導体装置の製造方法および表示装置
JP4711166B2 (ja) * 2004-08-03 2011-06-29 株式会社 液晶先端技術開発センター 結晶化装置、および結晶化方法
JP2006049481A (ja) * 2004-08-03 2006-02-16 Advanced Lcd Technologies Development Center Co Ltd 結晶化装置、結晶化方法、および位相変調素子
JP4607669B2 (ja) 2005-06-06 2011-01-05 株式会社 液晶先端技術開発センター レーザアニール用位相シフタ及びレーザアニール装置
TW200713460A (en) * 2005-09-22 2007-04-01 Adv Lcd Tech Dev Ct Co Ltd Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method
JP4956987B2 (ja) * 2005-12-16 2012-06-20 株式会社島津製作所 レーザー結晶化装置及び結晶化方法
US8676876B2 (en) * 2006-06-27 2014-03-18 International Business Machines Corporation Synchronizing an active feed adapter and a backup feed adapter in a high speed, low latency data communications environment
US8122144B2 (en) * 2006-06-27 2012-02-21 International Business Machines Corporation Reliable messaging using redundant message streams in a high speed, low latency data communications environment
US8296778B2 (en) 2006-06-27 2012-10-23 International Business Machines Corporation Computer data communications in a high speed, low latency data communications environment
JP5314857B2 (ja) * 2006-07-28 2013-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7994021B2 (en) 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2008270726A (ja) * 2007-03-23 2008-11-06 Advanced Lcd Technologies Development Center Co Ltd 結晶化装置、結晶化方法、デバイス、および光変調素子
JP2009272509A (ja) * 2008-05-09 2009-11-19 Advanced Lcd Technologies Development Center Co Ltd 光照射装置、結晶化装置、結晶化方法、およびデバイス
JP6218806B2 (ja) * 2012-04-17 2017-10-25 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 照明装置
US20130293858A1 (en) * 2012-05-04 2013-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Anisotropic phase shifting mask
CN105185694A (zh) * 2015-08-20 2015-12-23 京东方科技集团股份有限公司 多晶硅薄膜形成方法、掩膜版、多晶硅薄膜和薄膜晶体管
WO2020152796A1 (ja) * 2019-01-23 2020-07-30 ギガフォトン株式会社 レーザ加工装置及び被加工物の加工方法

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JP3180481B2 (ja) * 1992-11-24 2001-06-25 日新電機株式会社 薄膜トランジスタ用単結晶シリコン層の形成方法
KR100841147B1 (ko) * 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
JP2000243970A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
US7217605B2 (en) * 2000-11-29 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method of manufacturing a semiconductor device
US7450618B2 (en) * 2001-01-30 2008-11-11 Board Of Trustees Operating Michigan State University Laser system using ultrashort laser pulses
TW521310B (en) * 2001-02-08 2003-02-21 Toshiba Corp Laser processing method and apparatus
TWI276179B (en) * 2002-04-15 2007-03-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device having semiconductor films of different crystallinity, substrate unit, and liquid crystal display, and their manufacturing method
JP4620450B2 (ja) * 2002-04-23 2011-01-26 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法、並びに位相シフトマスク
JP4347546B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法および光学系
JP4347545B2 (ja) 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
TW200414280A (en) * 2002-09-25 2004-08-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device, annealing method, annealing apparatus and display apparatus
TW200503061A (en) * 2003-06-30 2005-01-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus

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