JP2004031841A5 - - Google Patents

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Publication number
JP2004031841A5
JP2004031841A5 JP2002188846A JP2002188846A JP2004031841A5 JP 2004031841 A5 JP2004031841 A5 JP 2004031841A5 JP 2002188846 A JP2002188846 A JP 2002188846A JP 2002188846 A JP2002188846 A JP 2002188846A JP 2004031841 A5 JP2004031841 A5 JP 2004031841A5
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JP
Japan
Prior art keywords
phase shift
light
semiconductor film
shift mask
light intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002188846A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004031841A (ja
JP4347546B2 (ja
Filing date
Publication date
Priority claimed from JP2002188846A external-priority patent/JP4347546B2/ja
Priority to JP2002188846A priority Critical patent/JP4347546B2/ja
Application filed filed Critical
Priority to TW092117035A priority patent/TWI282581B/zh
Priority to US10/603,821 priority patent/US7101436B2/en
Priority to KR1020030042975A priority patent/KR20040002803A/ko
Priority to CNA031489591A priority patent/CN1480982A/zh
Publication of JP2004031841A publication Critical patent/JP2004031841A/ja
Publication of JP2004031841A5 publication Critical patent/JP2004031841A5/ja
Priority to US11/442,331 priority patent/US7537660B2/en
Priority to US12/403,776 priority patent/US20090181483A1/en
Priority to US12/403,726 priority patent/US7692864B2/en
Publication of JP4347546B2 publication Critical patent/JP4347546B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002188846A 2002-06-28 2002-06-28 結晶化装置、結晶化方法および光学系 Expired - Fee Related JP4347546B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002188846A JP4347546B2 (ja) 2002-06-28 2002-06-28 結晶化装置、結晶化方法および光学系
TW092117035A TWI282581B (en) 2002-06-28 2003-06-23 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor
US10/603,821 US7101436B2 (en) 2002-06-28 2003-06-26 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
KR1020030042975A KR20040002803A (ko) 2002-06-28 2003-06-28 결정화 장치, 결정화 장치에 사용되는 광학부재, 결정화방법, 박막 트랜지스터의 제조 방법 및 표시 장치의매트릭스 회로 기판의 제조 방법
CNA031489591A CN1480982A (zh) 2002-06-28 2003-06-30 晶化装置、用于晶化装置的光学部件和晶化方法
US11/442,331 US7537660B2 (en) 2002-06-28 2006-05-30 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
US12/403,776 US20090181483A1 (en) 2002-06-28 2009-03-13 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
US12/403,726 US7692864B2 (en) 2002-06-28 2009-03-13 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002188846A JP4347546B2 (ja) 2002-06-28 2002-06-28 結晶化装置、結晶化方法および光学系

Publications (3)

Publication Number Publication Date
JP2004031841A JP2004031841A (ja) 2004-01-29
JP2004031841A5 true JP2004031841A5 (cg-RX-API-DMAC7.html) 2005-10-20
JP4347546B2 JP4347546B2 (ja) 2009-10-21

Family

ID=31183425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002188846A Expired - Fee Related JP4347546B2 (ja) 2002-06-28 2002-06-28 結晶化装置、結晶化方法および光学系

Country Status (5)

Country Link
US (4) US7101436B2 (cg-RX-API-DMAC7.html)
JP (1) JP4347546B2 (cg-RX-API-DMAC7.html)
KR (1) KR20040002803A (cg-RX-API-DMAC7.html)
CN (1) CN1480982A (cg-RX-API-DMAC7.html)
TW (1) TWI282581B (cg-RX-API-DMAC7.html)

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JP4347546B2 (ja) 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法および光学系
TWI301295B (en) * 2002-07-24 2008-09-21 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, thim film transistor and display apparatus
TWI300950B (en) * 2002-11-29 2008-09-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same
TW200422749A (en) * 2003-04-22 2004-11-01 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus
TW200519503A (en) * 2003-09-30 2005-06-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device and phase modulation element
US7465648B2 (en) * 2003-11-20 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
US7374985B2 (en) * 2003-11-20 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
TW200528756A (en) * 2004-01-27 2005-09-01 Adv Lcd Tech Dev Ct Co Ltd Light application apparatus, crystallization apparatus and optical modulation element assembly
TW200533982A (en) * 2004-02-17 2005-10-16 Adv Lcd Tech Dev Ct Co Ltd Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, device, and light modulation element
JP4664088B2 (ja) * 2004-02-17 2011-04-06 株式会社 液晶先端技術開発センター 光照射装置、光照射方法、結晶化装置、結晶化方法、および光変調素子
TW200541078A (en) * 2004-03-31 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
JP4492946B2 (ja) * 2004-07-08 2010-06-30 株式会社 液晶先端技術開発センター 光照射装置、結晶化装置、結晶化方法
JP4291230B2 (ja) * 2004-08-06 2009-07-08 株式会社日本製鋼所 結晶化膜の形成方法及びその装置
TW200607008A (en) 2004-08-09 2006-02-16 Adv Lcd Tech Dev Ct Co Ltd Light irradiation apparatus, crystallization apparatus, crystallization method and device
US7365917B2 (en) * 2004-08-16 2008-04-29 Xceed Imaging Ltd. Optical method and system for extended depth of focus
JP4657774B2 (ja) 2004-09-02 2011-03-23 株式会社 液晶先端技術開発センター 光照射装置、結晶化装置、結晶化方法、半導体デバイス、及び光変調素子
US7733298B2 (en) * 2004-10-19 2010-06-08 Hewlett-Packard Development Company, L.P. Display device
JP4607669B2 (ja) 2005-06-06 2011-01-05 株式会社 液晶先端技術開発センター レーザアニール用位相シフタ及びレーザアニール装置
WO2007049525A1 (en) * 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
US8173977B2 (en) * 2006-10-03 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
US8531783B2 (en) 2010-02-09 2013-09-10 Xceed Imaging Ltd. Imaging method and system for imaging with extended depth of focus
DE102010053781B4 (de) * 2010-12-08 2018-03-01 LIMO GmbH Vorrichtung zur Umwandlung von Laserstrahlung in Laserstrahlung mit einem M-Profil
FR2972814B1 (fr) * 2011-03-16 2014-04-18 Essilor Int Element optique transparent a plusieurs couches constituees de pavages cellulaires
JP6218806B2 (ja) * 2012-04-17 2017-10-25 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 照明装置
TWI459122B (zh) 2013-01-17 2014-11-01 Delta Electronics Inc 光學系統
CN105185694A (zh) * 2015-08-20 2015-12-23 京东方科技集团股份有限公司 多晶硅薄膜形成方法、掩膜版、多晶硅薄膜和薄膜晶体管
KR102467462B1 (ko) * 2017-12-05 2022-11-16 삼성디스플레이 주식회사 레이저 결정화 장치
CN112470036B (zh) * 2018-10-23 2024-10-15 松下知识产权经营株式会社 光检测系统
CN109814267B (zh) * 2019-04-08 2021-06-18 长春理工大学 能够提高耦合效率的芯片式光谱仪前端耦合系统

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KR100841147B1 (ko) * 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
JP2001176772A (ja) 1999-12-15 2001-06-29 Nikon Corp 照明光学装置および該照明光学装置を備えた投影露光装置
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
KR100319455B1 (ko) * 1999-12-24 2002-01-05 오길록 결정화 장비용 광학 시스템
US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
US7217605B2 (en) * 2000-11-29 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method of manufacturing a semiconductor device
US7450618B2 (en) * 2001-01-30 2008-11-11 Board Of Trustees Operating Michigan State University Laser system using ultrashort laser pulses
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TWI276179B (en) * 2002-04-15 2007-03-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device having semiconductor films of different crystallinity, substrate unit, and liquid crystal display, and their manufacturing method
JP4620450B2 (ja) * 2002-04-23 2011-01-26 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法、並びに位相シフトマスク
JP4347546B2 (ja) 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法および光学系
JP4347545B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
TW200414280A (en) * 2002-09-25 2004-08-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device, annealing method, annealing apparatus and display apparatus
TW200503061A (en) * 2003-06-30 2005-01-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
JP4855886B2 (ja) * 2006-10-02 2012-01-18 株式会社東芝 電力増幅装置

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