JP4347546B2 - 結晶化装置、結晶化方法および光学系 - Google Patents

結晶化装置、結晶化方法および光学系 Download PDF

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Publication number
JP4347546B2
JP4347546B2 JP2002188846A JP2002188846A JP4347546B2 JP 4347546 B2 JP4347546 B2 JP 4347546B2 JP 2002188846 A JP2002188846 A JP 2002188846A JP 2002188846 A JP2002188846 A JP 2002188846A JP 4347546 B2 JP4347546 B2 JP 4347546B2
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Prior art keywords
phase shift
light intensity
light
optical system
shift mask
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Expired - Fee Related
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JP2002188846A
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English (en)
Japanese (ja)
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JP2004031841A (ja
JP2004031841A5 (cg-RX-API-DMAC7.html
Inventor
幸夫 谷口
正清 松村
弘高 山口
幹彦 西谷
晋 辻川
嘉伸 木村
正之 十文字
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株式会社 液晶先端技術開発センター
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Priority to JP2002188846A priority Critical patent/JP4347546B2/ja
Priority to TW092117035A priority patent/TWI282581B/zh
Priority to US10/603,821 priority patent/US7101436B2/en
Priority to KR1020030042975A priority patent/KR20040002803A/ko
Priority to CNA031489591A priority patent/CN1480982A/zh
Publication of JP2004031841A publication Critical patent/JP2004031841A/ja
Publication of JP2004031841A5 publication Critical patent/JP2004031841A5/ja
Priority to US11/442,331 priority patent/US7537660B2/en
Priority to US12/403,776 priority patent/US20090181483A1/en
Priority to US12/403,726 priority patent/US7692864B2/en
Application granted granted Critical
Publication of JP4347546B2 publication Critical patent/JP4347546B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/54—Accessories
    • G03B21/56—Projection screens
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP2002188846A 2002-06-28 2002-06-28 結晶化装置、結晶化方法および光学系 Expired - Fee Related JP4347546B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002188846A JP4347546B2 (ja) 2002-06-28 2002-06-28 結晶化装置、結晶化方法および光学系
TW092117035A TWI282581B (en) 2002-06-28 2003-06-23 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor
US10/603,821 US7101436B2 (en) 2002-06-28 2003-06-26 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
KR1020030042975A KR20040002803A (ko) 2002-06-28 2003-06-28 결정화 장치, 결정화 장치에 사용되는 광학부재, 결정화방법, 박막 트랜지스터의 제조 방법 및 표시 장치의매트릭스 회로 기판의 제조 방법
CNA031489591A CN1480982A (zh) 2002-06-28 2003-06-30 晶化装置、用于晶化装置的光学部件和晶化方法
US11/442,331 US7537660B2 (en) 2002-06-28 2006-05-30 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
US12/403,776 US20090181483A1 (en) 2002-06-28 2009-03-13 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
US12/403,726 US7692864B2 (en) 2002-06-28 2009-03-13 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002188846A JP4347546B2 (ja) 2002-06-28 2002-06-28 結晶化装置、結晶化方法および光学系

Publications (3)

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JP2004031841A JP2004031841A (ja) 2004-01-29
JP2004031841A5 JP2004031841A5 (cg-RX-API-DMAC7.html) 2005-10-20
JP4347546B2 true JP4347546B2 (ja) 2009-10-21

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US (4) US7101436B2 (cg-RX-API-DMAC7.html)
JP (1) JP4347546B2 (cg-RX-API-DMAC7.html)
KR (1) KR20040002803A (cg-RX-API-DMAC7.html)
CN (1) CN1480982A (cg-RX-API-DMAC7.html)
TW (1) TWI282581B (cg-RX-API-DMAC7.html)

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TWI301295B (en) * 2002-07-24 2008-09-21 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, thim film transistor and display apparatus
TWI300950B (en) * 2002-11-29 2008-09-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same
TW200422749A (en) * 2003-04-22 2004-11-01 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus
TW200519503A (en) * 2003-09-30 2005-06-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device and phase modulation element
US7465648B2 (en) * 2003-11-20 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
US7374985B2 (en) * 2003-11-20 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
TW200528756A (en) * 2004-01-27 2005-09-01 Adv Lcd Tech Dev Ct Co Ltd Light application apparatus, crystallization apparatus and optical modulation element assembly
TW200533982A (en) * 2004-02-17 2005-10-16 Adv Lcd Tech Dev Ct Co Ltd Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, device, and light modulation element
JP4664088B2 (ja) * 2004-02-17 2011-04-06 株式会社 液晶先端技術開発センター 光照射装置、光照射方法、結晶化装置、結晶化方法、および光変調素子
TW200541078A (en) * 2004-03-31 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
JP4492946B2 (ja) * 2004-07-08 2010-06-30 株式会社 液晶先端技術開発センター 光照射装置、結晶化装置、結晶化方法
JP4291230B2 (ja) * 2004-08-06 2009-07-08 株式会社日本製鋼所 結晶化膜の形成方法及びその装置
TW200607008A (en) 2004-08-09 2006-02-16 Adv Lcd Tech Dev Ct Co Ltd Light irradiation apparatus, crystallization apparatus, crystallization method and device
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JP4657774B2 (ja) 2004-09-02 2011-03-23 株式会社 液晶先端技術開発センター 光照射装置、結晶化装置、結晶化方法、半導体デバイス、及び光変調素子
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JP4607669B2 (ja) 2005-06-06 2011-01-05 株式会社 液晶先端技術開発センター レーザアニール用位相シフタ及びレーザアニール装置
WO2007049525A1 (en) * 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
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JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
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DE102010053781B4 (de) * 2010-12-08 2018-03-01 LIMO GmbH Vorrichtung zur Umwandlung von Laserstrahlung in Laserstrahlung mit einem M-Profil
FR2972814B1 (fr) * 2011-03-16 2014-04-18 Essilor Int Element optique transparent a plusieurs couches constituees de pavages cellulaires
JP6218806B2 (ja) * 2012-04-17 2017-10-25 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 照明装置
TWI459122B (zh) 2013-01-17 2014-11-01 Delta Electronics Inc 光學系統
CN105185694A (zh) * 2015-08-20 2015-12-23 京东方科技集团股份有限公司 多晶硅薄膜形成方法、掩膜版、多晶硅薄膜和薄膜晶体管
KR102467462B1 (ko) * 2017-12-05 2022-11-16 삼성디스플레이 주식회사 레이저 결정화 장치
CN112470036B (zh) * 2018-10-23 2024-10-15 松下知识产权经营株式会社 光检测系统
CN109814267B (zh) * 2019-04-08 2021-06-18 长春理工大学 能够提高耦合效率的芯片式光谱仪前端耦合系统

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Publication number Publication date
US20090180190A1 (en) 2009-07-16
US20040036969A1 (en) 2004-02-26
JP2004031841A (ja) 2004-01-29
US7692864B2 (en) 2010-04-06
KR20040002803A (ko) 2004-01-07
US7101436B2 (en) 2006-09-05
US7537660B2 (en) 2009-05-26
TW200403711A (en) 2004-03-01
US20060213431A1 (en) 2006-09-28
TWI282581B (en) 2007-06-11
US20090181483A1 (en) 2009-07-16
CN1480982A (zh) 2004-03-10

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