TWI282581B - Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor - Google Patents
Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor Download PDFInfo
- Publication number
- TWI282581B TWI282581B TW092117035A TW92117035A TWI282581B TW I282581 B TWI282581 B TW I282581B TW 092117035 A TW092117035 A TW 092117035A TW 92117035 A TW92117035 A TW 92117035A TW I282581 B TWI282581 B TW I282581B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- light intensity
- phase shift
- shift mask
- semiconductor film
- Prior art date
Links
- 238000002425 crystallisation Methods 0.000 title claims abstract description 84
- 230000003287 optical effect Effects 0.000 title claims abstract description 79
- 230000008025 crystallization Effects 0.000 title claims abstract description 68
- 239000010409 thin film Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000009826 distribution Methods 0.000 claims abstract description 175
- 230000010363 phase shift Effects 0.000 claims abstract description 150
- 239000004065 semiconductor Substances 0.000 claims abstract description 140
- 238000005286 illumination Methods 0.000 claims abstract description 47
- 239000010408 film Substances 0.000 claims description 173
- 239000000758 substrate Substances 0.000 claims description 83
- 239000012071 phase Substances 0.000 claims description 55
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 claims description 48
- 239000013078 crystal Substances 0.000 claims description 47
- 230000005540 biological transmission Effects 0.000 claims description 37
- 230000006870 function Effects 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 238000012546 transfer Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004973 liquid crystal related substance Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000010586 diagram Methods 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 8
- 238000012986 modification Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 210000001747 pupil Anatomy 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000002776 aggregation Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims 3
- 239000004744 fabric Substances 0.000 claims 3
- 230000008439 repair process Effects 0.000 claims 3
- 230000000630 rising effect Effects 0.000 claims 2
- ABEXEQSGABRUHS-UHFFFAOYSA-N 16-methylheptadecyl 16-methylheptadecanoate Chemical compound CC(C)CCCCCCCCCCCCCCCOC(=O)CCCCCCCCCCCCCCC(C)C ABEXEQSGABRUHS-UHFFFAOYSA-N 0.000 claims 1
- DOSMHBDKKKMIEF-UHFFFAOYSA-N 2-[3-(diethylamino)-6-diethylazaniumylidenexanthen-9-yl]-5-[3-[3-[4-(1-methylindol-3-yl)-2,5-dioxopyrrol-3-yl]indol-1-yl]propylsulfamoyl]benzenesulfonate Chemical compound C1=CC(=[N+](CC)CC)C=C2OC3=CC(N(CC)CC)=CC=C3C(C=3C(=CC(=CC=3)S(=O)(=O)NCCCN3C4=CC=CC=C4C(C=4C(NC(=O)C=4C=4C5=CC=CC=C5N(C)C=4)=O)=C3)S([O-])(=O)=O)=C21 DOSMHBDKKKMIEF-UHFFFAOYSA-N 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 241000764238 Isis Species 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 238000004220 aggregation Methods 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000012141 concentrate Substances 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 238000012937 correction Methods 0.000 claims 1
- 238000002050 diffraction method Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- BJRNKVDFDLYUGJ-RMPHRYRLSA-N hydroquinone O-beta-D-glucopyranoside Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=CC=C(O)C=C1 BJRNKVDFDLYUGJ-RMPHRYRLSA-N 0.000 claims 1
- 238000005417 image-selected in vivo spectroscopy Methods 0.000 claims 1
- 238000012739 integrated shape imaging system Methods 0.000 claims 1
- 239000010977 jade Substances 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 230000009467 reduction Effects 0.000 claims 1
- 238000009751 slip forming Methods 0.000 claims 1
- 238000009827 uniform distribution Methods 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002609 anti-worm Effects 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229920005994 diacetyl cellulose Polymers 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/54—Accessories
- G03B21/56—Projection screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002188846A JP4347546B2 (ja) | 2002-06-28 | 2002-06-28 | 結晶化装置、結晶化方法および光学系 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200403711A TW200403711A (en) | 2004-03-01 |
| TWI282581B true TWI282581B (en) | 2007-06-11 |
Family
ID=31183425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092117035A TWI282581B (en) | 2002-06-28 | 2003-06-23 | Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US7101436B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4347546B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20040002803A (cg-RX-API-DMAC7.html) |
| CN (1) | CN1480982A (cg-RX-API-DMAC7.html) |
| TW (1) | TWI282581B (cg-RX-API-DMAC7.html) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4347545B2 (ja) * | 2002-06-28 | 2009-10-21 | 株式会社 液晶先端技術開発センター | 結晶化装置および結晶化方法 |
| JP4347546B2 (ja) | 2002-06-28 | 2009-10-21 | 株式会社 液晶先端技術開発センター | 結晶化装置、結晶化方法および光学系 |
| TWI301295B (en) * | 2002-07-24 | 2008-09-21 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, thim film transistor and display apparatus |
| TWI300950B (en) * | 2002-11-29 | 2008-09-11 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same |
| TW200422749A (en) * | 2003-04-22 | 2004-11-01 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus |
| TW200519503A (en) * | 2003-09-30 | 2005-06-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, device and phase modulation element |
| US7465648B2 (en) * | 2003-11-20 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method for manufacturing semiconductor device |
| US7374985B2 (en) * | 2003-11-20 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method for manufacturing semiconductor device |
| TW200528756A (en) * | 2004-01-27 | 2005-09-01 | Adv Lcd Tech Dev Ct Co Ltd | Light application apparatus, crystallization apparatus and optical modulation element assembly |
| TW200533982A (en) * | 2004-02-17 | 2005-10-16 | Adv Lcd Tech Dev Ct Co Ltd | Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, device, and light modulation element |
| JP4664088B2 (ja) * | 2004-02-17 | 2011-04-06 | 株式会社 液晶先端技術開発センター | 光照射装置、光照射方法、結晶化装置、結晶化方法、および光変調素子 |
| TW200541078A (en) * | 2004-03-31 | 2005-12-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus |
| JP4492946B2 (ja) * | 2004-07-08 | 2010-06-30 | 株式会社 液晶先端技術開発センター | 光照射装置、結晶化装置、結晶化方法 |
| JP4291230B2 (ja) * | 2004-08-06 | 2009-07-08 | 株式会社日本製鋼所 | 結晶化膜の形成方法及びその装置 |
| TW200607008A (en) | 2004-08-09 | 2006-02-16 | Adv Lcd Tech Dev Ct Co Ltd | Light irradiation apparatus, crystallization apparatus, crystallization method and device |
| US7365917B2 (en) * | 2004-08-16 | 2008-04-29 | Xceed Imaging Ltd. | Optical method and system for extended depth of focus |
| JP4657774B2 (ja) | 2004-09-02 | 2011-03-23 | 株式会社 液晶先端技術開発センター | 光照射装置、結晶化装置、結晶化方法、半導体デバイス、及び光変調素子 |
| US7733298B2 (en) * | 2004-10-19 | 2010-06-08 | Hewlett-Packard Development Company, L.P. | Display device |
| JP4607669B2 (ja) | 2005-06-06 | 2011-01-05 | 株式会社 液晶先端技術開発センター | レーザアニール用位相シフタ及びレーザアニール装置 |
| WO2007049525A1 (en) * | 2005-10-26 | 2007-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and manufacturing method of semiconductor device |
| US8173977B2 (en) * | 2006-10-03 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method |
| JP5471046B2 (ja) * | 2009-06-03 | 2014-04-16 | 株式会社ブイ・テクノロジー | レーザアニール方法及びレーザアニール装置 |
| US8531783B2 (en) | 2010-02-09 | 2013-09-10 | Xceed Imaging Ltd. | Imaging method and system for imaging with extended depth of focus |
| DE102010053781B4 (de) * | 2010-12-08 | 2018-03-01 | LIMO GmbH | Vorrichtung zur Umwandlung von Laserstrahlung in Laserstrahlung mit einem M-Profil |
| FR2972814B1 (fr) * | 2011-03-16 | 2014-04-18 | Essilor Int | Element optique transparent a plusieurs couches constituees de pavages cellulaires |
| JP6218806B2 (ja) * | 2012-04-17 | 2017-10-25 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 照明装置 |
| TWI459122B (zh) | 2013-01-17 | 2014-11-01 | Delta Electronics Inc | 光學系統 |
| CN105185694A (zh) * | 2015-08-20 | 2015-12-23 | 京东方科技集团股份有限公司 | 多晶硅薄膜形成方法、掩膜版、多晶硅薄膜和薄膜晶体管 |
| KR102467462B1 (ko) * | 2017-12-05 | 2022-11-16 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
| CN112470036B (zh) * | 2018-10-23 | 2024-10-15 | 松下知识产权经营株式会社 | 光检测系统 |
| CN109814267B (zh) * | 2019-04-08 | 2021-06-18 | 长春理工大学 | 能够提高耦合效率的芯片式光谱仪前端耦合系统 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2732498B2 (ja) * | 1988-11-24 | 1998-03-30 | 株式会社日立製作所 | 縮小投影式露光方法及びその装置 |
| KR100841147B1 (ko) * | 1998-03-11 | 2008-06-24 | 가부시키가이샤 니콘 | 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법 |
| JP2001176772A (ja) | 1999-12-15 | 2001-06-29 | Nikon Corp | 照明光学装置および該照明光学装置を備えた投影露光装置 |
| JP4403599B2 (ja) * | 1999-04-19 | 2010-01-27 | ソニー株式会社 | 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法 |
| KR100319455B1 (ko) * | 1999-12-24 | 2002-01-05 | 오길록 | 결정화 장비용 광학 시스템 |
| US6746942B2 (en) * | 2000-09-05 | 2004-06-08 | Sony Corporation | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
| US7217605B2 (en) * | 2000-11-29 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method of manufacturing a semiconductor device |
| US7450618B2 (en) * | 2001-01-30 | 2008-11-11 | Board Of Trustees Operating Michigan State University | Laser system using ultrashort laser pulses |
| TW521310B (en) * | 2001-02-08 | 2003-02-21 | Toshiba Corp | Laser processing method and apparatus |
| TWI276179B (en) * | 2002-04-15 | 2007-03-11 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device having semiconductor films of different crystallinity, substrate unit, and liquid crystal display, and their manufacturing method |
| JP4620450B2 (ja) * | 2002-04-23 | 2011-01-26 | 株式会社 液晶先端技術開発センター | 結晶化装置および結晶化方法、並びに位相シフトマスク |
| JP4347546B2 (ja) | 2002-06-28 | 2009-10-21 | 株式会社 液晶先端技術開発センター | 結晶化装置、結晶化方法および光学系 |
| JP4347545B2 (ja) * | 2002-06-28 | 2009-10-21 | 株式会社 液晶先端技術開発センター | 結晶化装置および結晶化方法 |
| TW200414280A (en) * | 2002-09-25 | 2004-08-01 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device, annealing method, annealing apparatus and display apparatus |
| TW200503061A (en) * | 2003-06-30 | 2005-01-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus |
| JP4855886B2 (ja) * | 2006-10-02 | 2012-01-18 | 株式会社東芝 | 電力増幅装置 |
-
2002
- 2002-06-28 JP JP2002188846A patent/JP4347546B2/ja not_active Expired - Fee Related
-
2003
- 2003-06-23 TW TW092117035A patent/TWI282581B/zh active
- 2003-06-26 US US10/603,821 patent/US7101436B2/en not_active Expired - Fee Related
- 2003-06-28 KR KR1020030042975A patent/KR20040002803A/ko not_active Ceased
- 2003-06-30 CN CNA031489591A patent/CN1480982A/zh active Pending
-
2006
- 2006-05-30 US US11/442,331 patent/US7537660B2/en not_active Expired - Fee Related
-
2009
- 2009-03-13 US US12/403,776 patent/US20090181483A1/en not_active Abandoned
- 2009-03-13 US US12/403,726 patent/US7692864B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20090180190A1 (en) | 2009-07-16 |
| US20040036969A1 (en) | 2004-02-26 |
| JP2004031841A (ja) | 2004-01-29 |
| US7692864B2 (en) | 2010-04-06 |
| KR20040002803A (ko) | 2004-01-07 |
| US7101436B2 (en) | 2006-09-05 |
| US7537660B2 (en) | 2009-05-26 |
| JP4347546B2 (ja) | 2009-10-21 |
| TW200403711A (en) | 2004-03-01 |
| US20060213431A1 (en) | 2006-09-28 |
| US20090181483A1 (en) | 2009-07-16 |
| CN1480982A (zh) | 2004-03-10 |
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