JP4308671B2 - ワイヤボンドパッドを有する半導体装置とその製作方法 - Google Patents

ワイヤボンドパッドを有する半導体装置とその製作方法 Download PDF

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JP4308671B2
JP4308671B2 JP2003577330A JP2003577330A JP4308671B2 JP 4308671 B2 JP4308671 B2 JP 4308671B2 JP 2003577330 A JP2003577330 A JP 2003577330A JP 2003577330 A JP2003577330 A JP 2003577330A JP 4308671 B2 JP4308671 B2 JP 4308671B2
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bond pad
wire bond
layer
passivation layer
conductor
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JP2005520342A5 (enExample
JP2005520342A (ja
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エイチ． ダウニー、スーザン
ダブリュ． ミラー、ジェームズ
ビー． ホール、ジェフリー
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NXP USA Inc
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NXP USA Inc
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US7947395B2 (en) 1996-08-08 2011-05-24 Hitachi Chemical Company, Ltd. Graphite particles and lithium secondary battery using the same as negative electrode
US8129051B2 (en) 1996-08-08 2012-03-06 Hitachi Chemical Company, Ltd. Graphite particles and lithium secondary battery using the same as negative electrode
US8580437B2 (en) 1996-08-08 2013-11-12 Hitachi Chemical Company, Ltd. Graphite particles and lithium secondary battery using the same as negative electrode
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