JP4306176B2 - ヘテロ接合素子 - Google Patents

ヘテロ接合素子 Download PDF

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Publication number
JP4306176B2
JP4306176B2 JP2002099252A JP2002099252A JP4306176B2 JP 4306176 B2 JP4306176 B2 JP 4306176B2 JP 2002099252 A JP2002099252 A JP 2002099252A JP 2002099252 A JP2002099252 A JP 2002099252A JP 4306176 B2 JP4306176 B2 JP 4306176B2
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JP
Japan
Prior art keywords
heterojunction
region
electron
functional layer
junction
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Expired - Fee Related
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JP2002099252A
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English (en)
Japanese (ja)
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JP2003298152A5 (https=
JP2003298152A (ja
Inventor
敦央 井上
哲 小川
淳 早坂
修一 神崎
貴雄 小西
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Sharp Corp
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Sharp Corp
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Priority to JP2002099252A priority Critical patent/JP4306176B2/ja
Publication of JP2003298152A publication Critical patent/JP2003298152A/ja
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2002099252A 2002-04-01 2002-04-01 ヘテロ接合素子 Expired - Fee Related JP4306176B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002099252A JP4306176B2 (ja) 2002-04-01 2002-04-01 ヘテロ接合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002099252A JP4306176B2 (ja) 2002-04-01 2002-04-01 ヘテロ接合素子

Publications (3)

Publication Number Publication Date
JP2003298152A JP2003298152A (ja) 2003-10-17
JP2003298152A5 JP2003298152A5 (https=) 2005-08-18
JP4306176B2 true JP4306176B2 (ja) 2009-07-29

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Family Applications (1)

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JP2002099252A Expired - Fee Related JP4306176B2 (ja) 2002-04-01 2002-04-01 ヘテロ接合素子

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JP (1) JP4306176B2 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4539078B2 (ja) * 2003-11-07 2010-09-08 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
JP4581386B2 (ja) * 2003-12-10 2010-11-17 ソニー株式会社 光電変換素子の製造方法、電子装置の製造方法および発光素子の製造方法
JP4824913B2 (ja) * 2004-02-17 2011-11-30 国立大学法人京都大学 グラフト薄膜を用いた光電素子及び太陽電池
AR048605A1 (es) * 2004-04-13 2006-05-10 Univ Princeton Metodo de fabricacion de un dispositivo optoelectronico que tiene una heterounion global
US7419846B2 (en) * 2004-04-13 2008-09-02 The Trustees Of Princeton University Method of fabricating an optoelectronic device having a bulk heterojunction
JP2006073900A (ja) * 2004-09-03 2006-03-16 Nippon Oil Corp 光電変換素子
EP1855323A4 (en) 2005-03-04 2010-05-05 Panasonic Elec Works Co Ltd MULTILAYER ORGANIC SOLAR CELL
US20070290195A1 (en) * 2005-08-22 2007-12-20 Stephen Forrest Increased open-circuit-voltage organic photosensitive devices
JP4775906B2 (ja) * 2005-11-29 2011-09-21 日東電工株式会社 光起電力装置及びその製造方法
WO2007108385A1 (ja) * 2006-03-20 2007-09-27 Matsushita Electric Works, Ltd. 有機薄膜太陽電池
WO2008152889A1 (ja) * 2007-06-11 2008-12-18 Konica Minolta Holdings, Inc. 光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器
JP2009054907A (ja) * 2007-08-29 2009-03-12 Mitsubishi Electric Corp ヘテロ接合素子
JP5636626B2 (ja) * 2007-12-27 2014-12-10 ソニー株式会社 半導体薄膜の形成方法および薄膜半導体装置の製造方法
JP5093673B2 (ja) * 2008-04-17 2012-12-12 独立行政法人産業技術総合研究所 有機薄膜太陽電池
US8080460B2 (en) * 2008-11-26 2011-12-20 Micron Technology, Inc. Methods of forming diodes
JP2009260400A (ja) * 2009-08-11 2009-11-05 Sony Corp 光電変換素子、電子装置および発光素子
WO2011018884A1 (ja) 2009-08-12 2011-02-17 株式会社クラレ 光電変換素子およびその製造方法
KR101844952B1 (ko) * 2011-04-15 2018-04-04 삼성전자주식회사 이미지 센서
JP2013093523A (ja) * 2011-10-27 2013-05-16 Univ Of Tokyo 光電変換素子の製造方法および光電変換素子
CN104737319B (zh) * 2012-10-18 2017-12-19 富士通株式会社 光电转换元件及其制造方法
JP6978775B2 (ja) * 2018-01-05 2021-12-08 国立研究開発法人理化学研究所 光電変換素子、光センサ、発電装置、及び光電変換方法

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JP2003298152A (ja) 2003-10-17

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