JP5375066B2 - 有機光電変換素子の製造方法、及び有機光電変換素子 - Google Patents
有機光電変換素子の製造方法、及び有機光電変換素子 Download PDFInfo
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- JP5375066B2 JP5375066B2 JP2008316643A JP2008316643A JP5375066B2 JP 5375066 B2 JP5375066 B2 JP 5375066B2 JP 2008316643 A JP2008316643 A JP 2008316643A JP 2008316643 A JP2008316643 A JP 2008316643A JP 5375066 B2 JP5375066 B2 JP 5375066B2
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- 125000004432 carbon atom Chemical group C* 0.000 description 1
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- 125000005578 chrysene group Chemical group 0.000 description 1
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
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- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
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- 125000005582 pentacene group Chemical group 0.000 description 1
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- WSRHMJYUEZHUCM-UHFFFAOYSA-N perylene-1,2,3,4-tetracarboxylic acid Chemical compound C=12C3=CC=CC2=CC=CC=1C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C2=C1C3=CC=C2C(=O)O WSRHMJYUEZHUCM-UHFFFAOYSA-N 0.000 description 1
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- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical group C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
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- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical group C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 1
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- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
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- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
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- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
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- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Description
(式中、Rはフルオロアルキル基、フルオロアルケニル基、フルオロシクロアルキル基、含フッ素芳香族炭化水素環基、または含フッ素芳香族複素環基であり、Xはシリル基、ホスホノ基、チオール基である。)
3.前記一般式(1)におけるXがシリル基であることを特徴とする前記2に記載の有機光電変換素子の製造方法。
4.前記一般式(1)におけるRが含フッ素芳香族炭化水素環基であることを特徴とする前記2または3に記載の有機光電変換素子の製造方法。
5.前記電子輸送層には酸化チタンが含まれることを特徴とする前記1〜4のいずれか1項に記載の有機光電変換素子の製造方法。
6.前記光電変換層がp型半導体材料とn型半導体材料との混合物からなることを特徴とする前記1〜5のいずれか1項に記載の有機光電変換素子の製造方法。
図1は電極(金属電極)が自己組織化単分子膜材料で表面処理された、本発明のバルクヘテロ接合型の有機光電変換素子を示す断面図である。
本発明に用いられるp型半導体材料としては、種々の縮合多環芳香族化合物や共役系化合物が挙げられる。
本発明に用いられるn型半導体材料の例としては、フラーレンC60、フラーレンC70、フラーレンC76、フラーレンC78、フラーレンC84、フラーレンC240、フラーレンC540、ミックスドフラーレン、フラーレンナノチューブ、多層ナノチューブ、単層ナノチューブ、ナノホーン(円錐型)、オクタアザポルフィリン、p型半導体のパーフルオロ体(パーフルオロペンタセンやパーフルオロフタロシアニン等)、ナフタレンテトラカルボン酸無水物、ナフタレンテトラカルボン酸ジイミド、ペリレンテトラカルボン酸無水物、ペリレンテトラカルボン酸ジイミド等の芳香族カルボン酸無水物やそのイミド化物、またはこれらの構造を骨格として含む、高分子化合物が挙げられる。
本発明において、自己組織化単分子膜とは、膜形成面の構成原子(例えば、水酸基)と結合可能な官能基を有する化合物(自己組織化単分子膜材料)とを、気体または液体の状態で膜形成面と共存させることにより、前記官能基が膜形成面の構成原子と吸着乃至結合して、直鎖分子を外側に向けて形成された緻密な単分子膜である。この単分子膜は化合物の膜形成面に対する自発的な化学吸着によって形成されることから、自己組織化単分子膜(SAM膜)と称される。
本発明のバルクヘテロ接合型の有機光電変換素子は、透明電極や金属電極と光電変換層との間に、機能層として、正孔輸送層(電子ブロック層)、電子輸送層(正孔ブロック層)、あるいは平滑化層等の他の層を有してバルクヘテロ接合型の有機光電変換素子が構成されてもよい。これらの中でも、光電変換層と陽極(通常、透明電極側)との中間には正孔輸送層(電子ブロック層)を、陰極(通常、金属電極側)との中間には電子輸送層(正孔ブロック層)を形成することで、光電変換層で発生した電荷をより効率的に取り出すことが可能となるため、これらの層を有していることが好ましい。
本発明に係る透明基板に用いられる透明基材としては、高い光透過性を有していればそれ以外に特に制限はない。例えば、基材としての硬度に優れ、またその表面への導電層の形成のしやすさ等の点で、ガラス基板、樹脂基板、樹脂フィルムなどが好適に挙げられるが、軽量性と柔軟性の観点から透明樹脂フィルムを用いることが好ましい。
本発明に係る透明導電層を有する透明電極は有機光電変換素子においては、その仕事関数により陽極にも陰極にもなり得る。
本発明に係る金属電極は有機光電変換素子においては、その仕事関数により陽極にも陰極にもなり得る。本発明に係る金属電極部は導電材単独層で合ってもよいが、導電性を有する材料に加えて、これらを保持する樹脂を併用してもよい。金属電極部の導電材としては、仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。
《有機光電変換素子STA−1の作製》
(金属電極TA−1の作製)
バリア層を有するPENフィルム(全光透過率90%)を基板として用い、基板を真空蒸着機にセットして、10−3Pa以下にまでに真空蒸着機内を減圧した後、Auを80nm蒸着して陽極となるTA−1を形成した。
TA−1を作製した後、例示化合物A1をトルエンに溶解した溶液にTA−1を30分間浸漬した後、イソプロパノール、アセトンを用いてそれぞれの溶媒で洗浄を行うことで余剰の例示化合物A1を取り除き、TA−1上に例示化合物A1の自己組織化単分子膜を形成した。上記作業以降は有機光電変換素子STA−1の作製と同等にして、有機光電変換素子STA−2を作製した。
有機光電変換素子STA−2の作製において、例示化合物A1をトルエンに溶解した溶液の代わりに例示化合物B1、C1にそれぞれ置き換えた以外は同様にして、有機光電変換素子STA−3、4を作製した。
《光電変換効率》
ガラス製の封止キャップとUV硬化樹脂を用いて封止を行った有機光電変換素子に、ソーラシュミレーター(AM1.5G)の光を100mW/cm2の強度で照射して、電圧−電流特性を測定し、光電変換効率を求めた。即ち、各有機光電変換素子について、I−Vテスターを用いて室温にて電流−電圧特性を測定し、短絡電流(Jsc)、開放電圧(Voc)、及び形状因子(F.F.)を求め、これらから光電変換効率(η(%))を求めた。なお、太陽電池の光電変換効率(η(%))は、下記式(A)に基づいて算出した。
ここで、Pは入射光強度[mW/cm2]、Vocは開放電圧[V]、Jscは短絡電流密度[mA・cm−2]、F.F.は形状因子を示す。
《有機光電変換素子STC−21の作製》
(透明電極TC−1の作製)
バリア層を有するPENフィルム(全光透過率90%)上にITOを平均膜厚150nmで蒸着し、陰極となるTC−1を作製した。
有機光電変換素子STC−21の作製において、電子輸送層を成膜したTC−1上に、例示化合物A2をトルエンに溶解した溶液にTC−1を30分間浸漬した後、イソプロパノール、アセトンを用いてそれぞれの溶媒で洗浄を行うことで余剰の例示化合物A2を取り除き、TC−1上に例示化合物A2の自己組織化単分子膜を形成した。上記作業以降は有機光電変換素子STC−21の作製と同等にして、有機光電変換素子STC−22を作製した。
有機光電変換素子STC−22の作製において、例示化合物A2をトルエンに溶解した溶液の代わりに例示化合物B2、C2にそれぞれ置き換えた以外は同様にして、有機光電変換素子STC−23、24を作製した。
11、17 透明基板
12 金属電極
13 自己組織化単分子膜からなる薄膜層
14 光電変換層
15 電子輸送層
16 透明電極
18 正孔輸送層
Claims (7)
- 基板上に、少なくとも陰極、電子輸送層、光電変換層、及び陽極がこの順に積層された有機光電変換素子の製造方法において、該電子輸送層を含フッ素系自己組織化単分子膜材料で表面処理した後、該光電変換層が塗布、乾燥、アニール処理により形成されることを特徴とする有機光電変換素子の製造方法。
- 前記含フッ素系自己組織化単分子膜材料が下記一般式(1)で表されることを特徴とする請求項1に記載の有機光電変換素子の製造方法。
一般式(1) R−X
(式中、Rはフルオロアルキル基、フルオロアルケニル基、フルオロシクロアルキル基、含フッ素芳香族炭化水素環基、または含フッ素芳香族複素環基であり、Xはシリル基、ホスホノ基、チオール基である。) - 前記一般式(1)におけるXがシリル基であることを特徴とする請求項2に記載の有機光電変換素子の製造方法。
- 前記一般式(1)におけるRが含フッ素芳香族炭化水素環基であることを特徴とする請求項2または3に記載の有機光電変換素子の製造方法。
- 前記電子輸送層には酸化チタンが含まれることを特徴とする請求項1〜4のいずれか1項に記載の有機光電変換素子の製造方法。
- 前記光電変換層がp型半導体材料とn型半導体材料との混合物からなることを特徴とする請求項1〜5のいずれか1項に記載の有機光電変換素子の製造方法。
- 請求項1〜6のいずれか1項に記載の有機光電変換素子の製造方法によって製造されたことを特徴とする有機光電変換素子。
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