JP4288160B2 - 窒素パージを行うトップ通気口を有する高速サイクルチャンバ - Google Patents
窒素パージを行うトップ通気口を有する高速サイクルチャンバ Download PDFInfo
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- JP4288160B2 JP4288160B2 JP2003519538A JP2003519538A JP4288160B2 JP 4288160 B2 JP4288160 B2 JP 4288160B2 JP 2003519538 A JP2003519538 A JP 2003519538A JP 2003519538 A JP2003519538 A JP 2003519538A JP 4288160 B2 JP4288160 B2 JP 4288160B2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 title claims description 6
- 238000010926 purge Methods 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims description 105
- 239000004065 semiconductor Substances 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 64
- 239000007789 gas Substances 0.000 claims description 50
- 230000008569 process Effects 0.000 claims description 22
- 239000011261 inert gas Substances 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 12
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 7
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 230000003993 interaction Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 107
- 238000012546 transfer Methods 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 21
- 238000012545 processing Methods 0.000 description 20
- 239000002245 particle Substances 0.000 description 15
- 239000012530 fluid Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000007666 vacuum forming Methods 0.000 description 5
- 239000013618 particulate matter Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 231100000252 nontoxic Toxicity 0.000 description 3
- 230000003000 nontoxic effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical group FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
- Y10S438/908—Utilizing cluster apparatus
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Output Control And Ontrol Of Special Type Engine (AREA)
Description
102…アクセスポート
104…ボトム真空ポート
106…ボトム通気口
108…ウエハ
110…ウエハサポート
112…パッド
114…領域
116…蒸気
122…未処理のウエハ
124…ウエハカセット
126…ロードポート
128…大気圧移送モジュール(ATM)
130…ロボットアーム
132…ロードロック
134…ウエハサポート
136…真空ポート
138…トップ通気口
139…バルブ
140…真空移送モジュール
142…プロセスチャンバ
144…ロボットアーム
146…アクセスポート
148…領域
150…ピン
160…拡散器
162…真空ポンプ
164…エッジ
Claims (15)
- 圧力変動境界内において半導体基板より上方に定められた所定の領域の環境を調整するための方法であって、
アクセスポートを開き、第一の圧力にある圧力変動境界内に、前記アクセスポートを通して半導体基板を導入し、
前記半導体基板の導入の際に、前記圧力変動境界内の上面を通るように設けられた通気口を通して、不活性ガスを流し、
前記半導体基板より上方に定められた領域内に、蒸気が実質的に存在せず前記半導体基板を保護する不活性ガスの領域を形成し、
前記圧力変動境界内に侵入した外部からの蒸気を、前記半導体基板の下に位置する前記圧力変動境界の底面へと押しやり、
前記開いたアクセスポートを閉じ、
前記圧力変動境界内の圧力を第二の圧力に推移させ、
前記半導体基板を移動させる
方法。 - 請求項1に記載の方法であって、
前記第二の圧力は真空状態である方法。 - 請求項2に記載の方法であって、
前記圧力変動境界の第二の圧力への推移は、さらに、
前記圧力変動境界の底面上に規定された通気口を通して、前記圧力変動境界内を排気する処理を含む
方法。 - 請求項1に記載の方法であって、
前記半導体基板より上方に定められた領域から前記蒸気を追い出す処理は、さらに、
前記圧力変動境界の上面を通るように設けられた通気口から不活性ガスを流し込む処理を含む方法。 - 請求項4に記載の方法であって、
前記通気口は、前記半導体基板の中央領域の上方に位置している方法。 - 請求項4に記載の方法であって、
前記圧力変動境界内の上面をガスが通るように設けられた通気口からガスを流し込む操作は、さらに、
前記半導体基板を前記不活性ガスで覆うことによって、前記圧力変動境界内において処理済みの半導体基板から発生する反応種から前記半導体基板を保護することを含む方法。 - 請求項4に記載の方法であって、
前記半導体基板より上方に定められた前記領域に蒸気が侵入するのを阻止するために、前記通気口からの前記不活性ガスの流れを、前記圧力変動境界へのアクセスポートが開いている間に生じるさせる方法。 - 請求項4に記載の方法であって、さらに、
前記半導体基板の上方に定められた前記領域より上方に、前記通気口と連通している拡散器を準備する工程を含む方法。 - 請求項4に記載の方法であって、
ガスの流量は、約10標準リットル毎分から100標準リットル毎分までの間である方法。 - 請求項8に記載の方法であって、
前記半導体基板の上面と前記拡散器の底面との間の距離は、約3ミリメートルから約3センチメートルまでの間である方法。 - 圧力変動境界内において半導体基板より上方に凝縮物が実質的に存在しない環境を準備するための方法であって、
圧力変動境界内に、第一のアクセスポートを通して未処理の半導体基板を導入し、
圧力変動境界内に、第二のアクセスポートを通して処理済みの半導体基板を導入し、
前記処理済みの半導体基板の導入の際に、前記圧力変動境界内の上面を通るように設けられた通気口を通して、不活性ガスを流し、
前記未処理の半導体基板の周辺に、半導体基板を保護する不活性ガスの領域を形成し、
前記処理済み半導体基板から該半導体基板より下方の前記圧力変動境界の底面に向けて、処理に用いられた後のガスである排ガスの残余を向かわせ、
前記未処理半導体基板を、圧力変動境界から前記第2のアクセスポートを通って搬送する
方法。 - 前記不活性ガスは、窒素である請求項11記載の方法。
- 前記排ガスの残余は、臭化水素を含む請求項12記載の方法。
- 請求項11記載の方法であって、
前記処理済み半導体基板を前記第二のアクセスポートを通って前記圧力変動境界へ導入する処理は、エッチング用チャンバからの前記処理済み半導体基板へのアクセスを含む方法。 - 請求項11記載の方法であって、
前記排ガスを、前記処理済み半導体基板から該半導体基板より下方の前記圧力変動境界の底面に向かわせる処理は、不活性ガスの流れとの相互作用を通して、前記オフガスの残余の少なくとも一部をこすり落とすことを含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US31106501P | 2001-08-08 | 2001-08-08 | |
US10/113,014 US6750155B2 (en) | 2001-08-08 | 2002-03-28 | Methods to minimize moisture condensation over a substrate in a rapid cycle chamber |
PCT/US2002/024287 WO2003014411A1 (en) | 2001-08-08 | 2002-07-30 | Rapid cycle chamber having a top vent with nitrogen purge |
Publications (2)
Publication Number | Publication Date |
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JP2005527099A JP2005527099A (ja) | 2005-09-08 |
JP4288160B2 true JP4288160B2 (ja) | 2009-07-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003519538A Expired - Lifetime JP4288160B2 (ja) | 2001-08-08 | 2002-07-30 | 窒素パージを行うトップ通気口を有する高速サイクルチャンバ |
Country Status (9)
Country | Link |
---|---|
US (2) | US6750155B2 (ja) |
EP (1) | EP1415013B1 (ja) |
JP (1) | JP4288160B2 (ja) |
KR (1) | KR100953847B1 (ja) |
CN (1) | CN1269183C (ja) |
AT (1) | ATE469250T1 (ja) |
DE (1) | DE60236512D1 (ja) |
TW (1) | TW577104B (ja) |
WO (1) | WO2003014411A1 (ja) |
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CN112345873B (zh) * | 2020-12-04 | 2023-08-01 | 苏州长光华芯光电技术股份有限公司 | 半导体激光器低温老化测试装置及低温老化测试方法 |
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JPH0312328A (ja) * | 1989-06-07 | 1991-01-21 | Canon Inc | 光学素子用ガラスプリフォームの製造法 |
US5205051A (en) | 1990-08-28 | 1993-04-27 | Materials Research Corporation | Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof |
US5314541A (en) | 1991-05-28 | 1994-05-24 | Tokyo Electron Limited | Reduced pressure processing system and reduced pressure processing method |
JP2973141B2 (ja) * | 1991-05-28 | 1999-11-08 | 東京エレクトロン株式会社 | 真空装置及びその制御方法 |
JPH0945597A (ja) * | 1995-05-25 | 1997-02-14 | Kokusai Electric Co Ltd | 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法 |
JP3966594B2 (ja) * | 1998-01-26 | 2007-08-29 | 東京エレクトロン株式会社 | 予備真空室およびそれを用いた真空処理装置 |
US6086362A (en) * | 1998-05-20 | 2000-07-11 | Applied Komatsu Technology, Inc. | Multi-function chamber for a substrate processing system |
US6016611A (en) * | 1998-07-13 | 2000-01-25 | Applied Komatsu Technology, Inc. | Gas flow control in a substrate processing system |
US6244811B1 (en) * | 1999-06-29 | 2001-06-12 | Lam Research Corporation | Atmospheric wafer transfer module with nest for wafer transport robot |
JP3676983B2 (ja) * | 2000-03-29 | 2005-07-27 | 株式会社日立国際電気 | 半導体製造方法、基板処理方法、及び半導体製造装置 |
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JP2014204017A (ja) * | 2013-04-08 | 2014-10-27 | シンフォニアテクノロジー株式会社 | 被処理体の受容装置 |
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US20040194268A1 (en) | 2004-10-07 |
US20030172508A1 (en) | 2003-09-18 |
KR100953847B1 (ko) | 2010-04-20 |
EP1415013A1 (en) | 2004-05-06 |
TW577104B (en) | 2004-02-21 |
JP2005527099A (ja) | 2005-09-08 |
KR20040030943A (ko) | 2004-04-09 |
US6750155B2 (en) | 2004-06-15 |
CN1269183C (zh) | 2006-08-09 |
WO2003014411A1 (en) | 2003-02-20 |
EP1415013B1 (en) | 2010-05-26 |
ATE469250T1 (de) | 2010-06-15 |
CN1539027A (zh) | 2004-10-20 |
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