DE60236512D1 - Herstellungsmethode in kammer mit schnellem arbeitgas-einlass - Google Patents

Herstellungsmethode in kammer mit schnellem arbeitgas-einlass

Info

Publication number
DE60236512D1
DE60236512D1 DE60236512T DE60236512T DE60236512D1 DE 60236512 D1 DE60236512 D1 DE 60236512D1 DE 60236512 T DE60236512 T DE 60236512T DE 60236512 T DE60236512 T DE 60236512T DE 60236512 D1 DE60236512 D1 DE 60236512D1
Authority
DE
Germany
Prior art keywords
chamber
semiconductor substrate
manufacture method
working gas
gas intake
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60236512T
Other languages
English (en)
Inventor
Harlan I Halsey
David E Jacob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60236512D1 publication Critical patent/DE60236512D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing
    • Y10S438/908—Utilizing cluster apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Output Control And Ontrol Of Special Type Engine (AREA)
DE60236512T 2001-08-08 2002-07-30 Herstellungsmethode in kammer mit schnellem arbeitgas-einlass Expired - Fee Related DE60236512D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US31106501P 2001-08-08 2001-08-08
US10/113,014 US6750155B2 (en) 2001-08-08 2002-03-28 Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
PCT/US2002/024287 WO2003014411A1 (en) 2001-08-08 2002-07-30 Rapid cycle chamber having a top vent with nitrogen purge

Publications (1)

Publication Number Publication Date
DE60236512D1 true DE60236512D1 (de) 2010-07-08

Family

ID=26810620

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60236512T Expired - Fee Related DE60236512D1 (de) 2001-08-08 2002-07-30 Herstellungsmethode in kammer mit schnellem arbeitgas-einlass

Country Status (9)

Country Link
US (2) US6750155B2 (de)
EP (1) EP1415013B1 (de)
JP (1) JP4288160B2 (de)
KR (1) KR100953847B1 (de)
CN (1) CN1269183C (de)
AT (1) ATE469250T1 (de)
DE (1) DE60236512D1 (de)
TW (1) TW577104B (de)
WO (1) WO2003014411A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10216786C5 (de) * 2002-04-15 2009-10-15 Ers Electronic Gmbh Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden
US7039999B2 (en) * 2002-04-25 2006-05-09 Tarr Adam L Method for installation of semiconductor fabrication tools
US6919101B2 (en) * 2003-02-04 2005-07-19 Tegal Corporation Method to deposit an impermeable film on porous low-k dielectric film
GB0329933D0 (en) * 2003-12-24 2004-01-28 Boc Group Plc Load lock
JP4798981B2 (ja) * 2004-10-28 2011-10-19 東京エレクトロン株式会社 基板処理装置の制御方法，基板処理装置，基板処理装置の制御を行うプログラム
US20060090703A1 (en) 2004-11-01 2006-05-04 Tokyo Electron Limited Substrate processing method, system and program
JP2007042929A (ja) * 2005-08-04 2007-02-15 Hitachi High-Tech Control Systems Corp ロードロック装置とその方法及び半導体製造装置
JP4980675B2 (ja) * 2006-08-25 2012-07-18 株式会社日立ハイテクノロジーズ 稼働状況を提示することができる装置
US20080242108A1 (en) * 2007-04-02 2008-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating semiconductor device
JP5006122B2 (ja) * 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5128918B2 (ja) * 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
US8033769B2 (en) 2007-11-30 2011-10-11 Novellus Systems, Inc. Loadlock designs and methods for using same
JP5160204B2 (ja) * 2007-11-30 2013-03-13 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5001828B2 (ja) * 2007-12-28 2012-08-15 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5179170B2 (ja) 2007-12-28 2013-04-10 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5356732B2 (ja) * 2008-06-06 2013-12-04 株式会社日立ハイテクノロジーズ 真空処理装置
US8288288B1 (en) 2008-06-16 2012-10-16 Novellus Systems, Inc. Transferring heat in loadlocks
KR101036605B1 (ko) * 2008-06-30 2011-05-24 세메스 주식회사 기판 지지 유닛 및 이를 이용한 매엽식 기판 연마 장치
US7972961B2 (en) * 2008-10-09 2011-07-05 Asm Japan K.K. Purge step-controlled sequence of processing semiconductor wafers
US8033771B1 (en) 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
JP5337532B2 (ja) * 2009-02-27 2013-11-06 株式会社日立ハイテクノロジーズ 真空処理装置
DE102009021563B4 (de) 2009-05-15 2018-08-16 Von Ardenne Gmbh Einrichtung zum Transport von Substraten in und aus Vakuumanlagen
DE102011011279A1 (de) 2011-02-15 2012-08-16 Von Ardenne Anlagentechnik Gmbh Apparatur zur Leitung des Gasstromes beim Belüften innerhalb eines Vakuumgehäuses
DE102011006462B4 (de) * 2011-03-30 2016-01-07 Von Ardenne Gmbh Schleusungsverfahren für eine Vakuumprozessanlage
CN103219223A (zh) * 2013-03-14 2013-07-24 上海华力微电子有限公司 一种去除晶圆残留溴化氢的装置及方法
JP2014204017A (ja) * 2013-04-08 2014-10-27 シンフォニアテクノロジー株式会社 被処理体の受容装置
CN105378907A (zh) * 2013-07-24 2016-03-02 应用材料公司 钴基板处理系统、设备及方法
US10217627B2 (en) * 2013-10-03 2019-02-26 Applied Materials, Inc. Methods of non-destructive post tungsten etch residue removal
CN105575848B (zh) * 2014-10-17 2018-08-28 中微半导体设备(上海)有限公司 真空锁系统及基片处理方法
CN104966690B (zh) * 2015-07-24 2018-09-04 京东方科技集团股份有限公司 刻蚀装置及其使用方法
US10249521B2 (en) * 2016-03-17 2019-04-02 Lam Research Ag Wet-dry integrated wafer processing system
CN107644949B (zh) * 2016-07-21 2020-11-24 Ncd有限公司 在oled上形成无机薄层的方法
CN109786297B (zh) * 2017-11-10 2021-09-28 长鑫存储技术有限公司 晶圆传送装置、晶圆传送装置的控制方法及晶圆加工设备
US11094511B2 (en) 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
US11036202B2 (en) * 2018-12-13 2021-06-15 Lam Research Corporation Real-time health monitoring of semiconductor manufacturing equipment
US11629409B2 (en) * 2019-05-28 2023-04-18 Applied Materials, Inc. Inline microwave batch degas chamber
CN111271607A (zh) * 2020-01-19 2020-06-12 北京北方华创微电子装备有限公司 用于半导体设备的过压保护装置、方法及异常检测方法
CN112345873B (zh) * 2020-12-04 2023-08-01 苏州长光华芯光电技术股份有限公司 半导体激光器低温老化测试装置及低温老化测试方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0312328A (ja) * 1989-06-07 1991-01-21 Canon Inc 光学素子用ガラスプリフォームの製造法
US5205051A (en) 1990-08-28 1993-04-27 Materials Research Corporation Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof
US5314541A (en) 1991-05-28 1994-05-24 Tokyo Electron Limited Reduced pressure processing system and reduced pressure processing method
JP2973141B2 (ja) * 1991-05-28 1999-11-08 東京エレクトロン株式会社 真空装置及びその制御方法
JPH0945597A (ja) * 1995-05-25 1997-02-14 Kokusai Electric Co Ltd 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法
JP3966594B2 (ja) * 1998-01-26 2007-08-29 東京エレクトロン株式会社 予備真空室およびそれを用いた真空処理装置
US6086362A (en) * 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
US6016611A (en) * 1998-07-13 2000-01-25 Applied Komatsu Technology, Inc. Gas flow control in a substrate processing system
US6244811B1 (en) * 1999-06-29 2001-06-12 Lam Research Corporation Atmospheric wafer transfer module with nest for wafer transport robot
JP3676983B2 (ja) * 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置

Also Published As

Publication number Publication date
EP1415013A1 (de) 2004-05-06
KR20040030943A (ko) 2004-04-09
JP4288160B2 (ja) 2009-07-01
TW577104B (en) 2004-02-21
KR100953847B1 (ko) 2010-04-20
ATE469250T1 (de) 2010-06-15
CN1539027A (zh) 2004-10-20
WO2003014411A1 (en) 2003-02-20
US20040194268A1 (en) 2004-10-07
EP1415013B1 (de) 2010-05-26
US20030172508A1 (en) 2003-09-18
CN1269183C (zh) 2006-08-09
US6750155B2 (en) 2004-06-15
JP2005527099A (ja) 2005-09-08

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee