JP4252452B2 - 一酸化けい素蒸着材料とその製造方法 - Google Patents
一酸化けい素蒸着材料とその製造方法 Download PDFInfo
- Publication number
- JP4252452B2 JP4252452B2 JP2003530015A JP2003530015A JP4252452B2 JP 4252452 B2 JP4252452 B2 JP 4252452B2 JP 2003530015 A JP2003530015 A JP 2003530015A JP 2003530015 A JP2003530015 A JP 2003530015A JP 4252452 B2 JP4252452 B2 JP 4252452B2
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- JP
- Japan
- Prior art keywords
- silicon monoxide
- vapor deposition
- monoxide vapor
- deposition material
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 title claims description 96
- 238000007740 vapor deposition Methods 0.000 title claims description 39
- 239000000463 material Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000008021 deposition Effects 0.000 claims description 31
- 239000002994 raw material Substances 0.000 claims description 22
- 238000001556 precipitation Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000013585 weight reducing agent Substances 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 32
- 239000000758 substrate Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 15
- 238000002207 thermal evaporation Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 235000013305 food Nutrition 0.000 description 3
- 229940127554 medical product Drugs 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 238000005550 wet granulation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Description
Claims (3)
- ラトラ試験の重量減少率(ラトラ値)が1.0%以下である性状を有する真空凝縮法による一酸化けい素蒸着材料。
- 原料を加熱昇華させた蒸発原料を析出基体の表面に析出、凝縮させて一酸化けい素蒸着材料を得るに際し、20Pa〜40Paの真空雰囲気とした析出室内において、筒体の上部側内径を下部側より小径化して筒内周壁を鉛直線に対し1〜45度傾けた傾斜面となした析出基体を使用し、前記傾斜内周面に析出、凝縮させる一酸化けい素蒸着材料の製造方法。
- 筒内周壁を傾斜面となした析出基体の前記筒内周壁が分割されている請求項2に記載の一酸化けい素蒸着材料の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001281524 | 2001-09-17 | ||
JP2001281524 | 2001-09-17 | ||
PCT/JP2002/009472 WO2003025246A1 (fr) | 2001-09-17 | 2002-09-13 | Materiau de monoxyde de silicium pour depot par evaporation sous vide et procede de preparation de celui-ci |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2003025246A1 JPWO2003025246A1 (ja) | 2004-12-24 |
JP4252452B2 true JP4252452B2 (ja) | 2009-04-08 |
Family
ID=19105336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003530015A Expired - Lifetime JP4252452B2 (ja) | 2001-09-17 | 2002-09-13 | 一酸化けい素蒸着材料とその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040241075A1 (ja) |
EP (1) | EP1443126B1 (ja) |
JP (1) | JP4252452B2 (ja) |
KR (1) | KR100583795B1 (ja) |
CN (1) | CN100516283C (ja) |
DE (1) | DE60226478D1 (ja) |
WO (1) | WO2003025246A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1318207A4 (en) * | 2000-08-31 | 2006-08-16 | Sumitomo Titanium Corp | SILICON MONOXIDE-GAS PHASE SEPARATING MATERIAL, METHOD OF MANUFACTURING THEREOF, RAW MATERIAL FOR THE PRODUCTION AND DEVICE FOR THE PRODUCTION THEREOF |
JP4729253B2 (ja) * | 2001-07-26 | 2011-07-20 | 株式会社大阪チタニウムテクノロジーズ | 一酸化けい素焼結体および一酸化けい素焼結ターゲット |
JP3828434B2 (ja) * | 2002-02-22 | 2006-10-04 | 住友チタニウム株式会社 | 一酸化ケイ素の焼結体およびその製造方法 |
KR101118933B1 (ko) * | 2003-04-28 | 2012-03-13 | 오사카 티타늄 테크놀로지스 캄파니 리미티드 | 리튬 2차 전지용 음극, 당해 음극을 사용하는 리튬 2차 전지, 당해 음극 형성에 사용하는 막 형성용 재료 및 당해 음극의 제조방법 |
JP4374330B2 (ja) * | 2005-06-16 | 2009-12-02 | 株式会社大阪チタニウムテクノロジーズ | 一酸化珪素系蒸着材料及びその製造方法 |
JP4900573B2 (ja) * | 2006-04-24 | 2012-03-21 | 信越化学工業株式会社 | 酸化珪素粉末の製造方法 |
JP4966151B2 (ja) * | 2007-03-15 | 2012-07-04 | 新日鉄マテリアルズ株式会社 | 一酸化珪素蒸着材料の製造方法およびその製造装置 |
KR20170088918A (ko) * | 2015-07-08 | 2017-08-02 | 썬쩐 비티아르 뉴 에너지 머티어리얼스 아이엔씨이 | 실리콘 산화물의 제조 장치 및 제조 방법 |
CN106966398B (zh) * | 2017-04-19 | 2023-08-08 | 合肥科晶材料技术有限公司 | 一种两源可控的SiO生产系统和生产方法 |
CN109210930B (zh) * | 2018-09-26 | 2024-05-17 | 溧阳天目先导电池材料科技有限公司 | 一种生产一氧化硅的多室卧式真空炉及一氧化硅制备方法 |
CN110359024A (zh) * | 2019-07-23 | 2019-10-22 | 清华大学 | 一种大批量制备表面增强拉曼基底的基片台 |
CN113501527B (zh) * | 2021-09-06 | 2021-11-16 | 北京壹金新能源科技有限公司 | 一种制备一氧化硅的方法 |
CN114180585A (zh) * | 2021-11-30 | 2022-03-15 | 长沙矿冶研究院有限责任公司 | 一种批量制备高纯一氧化硅的方法及装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4022050B1 (ja) * | 1962-06-22 | 1965-09-30 | ||
JPS6227318A (ja) * | 1985-07-29 | 1987-02-05 | Kawasaki Steel Corp | Sio微粉末の製造方法およびその装置 |
JPH05171412A (ja) * | 1991-12-18 | 1993-07-09 | Mitsubishi Heavy Ind Ltd | 一酸化ケイ素蒸着用材料の製造方法 |
JP3584096B2 (ja) * | 1995-10-11 | 2004-11-04 | 住友チタニウム株式会社 | 酸化珪素の製造方法 |
JP4081524B2 (ja) * | 1998-03-31 | 2008-04-30 | 株式会社マーレ フィルターシステムズ | 薬剤供給シャワー用カートリッジへの薬剤充填方法及びカートリッジ |
GB2357497A (en) * | 1999-12-22 | 2001-06-27 | Degussa | Hydrophobic silica |
JP3824047B2 (ja) * | 2000-02-04 | 2006-09-20 | 信越化学工業株式会社 | 非晶質酸化珪素粉末の製造方法 |
-
2002
- 2002-09-13 CN CNB028166213A patent/CN100516283C/zh not_active Expired - Fee Related
- 2002-09-13 JP JP2003530015A patent/JP4252452B2/ja not_active Expired - Lifetime
- 2002-09-13 US US10/489,074 patent/US20040241075A1/en not_active Abandoned
- 2002-09-13 KR KR1020047003038A patent/KR100583795B1/ko not_active IP Right Cessation
- 2002-09-13 WO PCT/JP2002/009472 patent/WO2003025246A1/ja active IP Right Grant
- 2002-09-13 DE DE60226478T patent/DE60226478D1/de not_active Expired - Lifetime
- 2002-09-13 EP EP02765557A patent/EP1443126B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1443126A1 (en) | 2004-08-04 |
EP1443126A4 (en) | 2007-05-02 |
CN100516283C (zh) | 2009-07-22 |
EP1443126B1 (en) | 2008-05-07 |
JPWO2003025246A1 (ja) | 2004-12-24 |
US20040241075A1 (en) | 2004-12-02 |
KR20040035743A (ko) | 2004-04-29 |
KR100583795B1 (ko) | 2006-05-26 |
WO2003025246A1 (fr) | 2003-03-27 |
CN1547622A (zh) | 2004-11-17 |
DE60226478D1 (de) | 2008-06-19 |
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