CN110359024A - 一种大批量制备表面增强拉曼基底的基片台 - Google Patents

一种大批量制备表面增强拉曼基底的基片台 Download PDF

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CN110359024A
CN110359024A CN201910665983.3A CN201910665983A CN110359024A CN 110359024 A CN110359024 A CN 110359024A CN 201910665983 A CN201910665983 A CN 201910665983A CN 110359024 A CN110359024 A CN 110359024A
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substrate
chip bench
enhanced raman
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surface enhanced
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张政军
樊易航
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Tsinghua University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders

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Abstract

本发明属于痕量有机物检测技术领域，涉及一种可以同时大批量制备表面增强拉曼基底的基片台，其可用于大批量制备表面增强拉曼基底。所述基片台包括环状体及其支撑架，所述环状体上设置多个锥形体，所述锥形体的两个表面粘贴多个基片。本发明的基片台，可以采用倾斜生长法同时在多个基片上沉积银纳米棒。由多基片银纳米棒构成的阵列薄膜，具有较好的产品一致性，可以提高传统制备方法的生产效率。

Description

一种大批量制备表面增强拉曼基底的基片台
技术领域
本发明属于痕量有机物检测技术领域，特别涉及一种能够大批量制备表面增强拉曼基底的基片台。
背景技术
表面增强拉曼效应作为一种痕量物质检测方法，以其高灵敏度、快速检测、低费用、无损分析等优点被广泛应用于环境污染物检测、食品安全检测、生物及医疗等领域。通常采用金、银或铜等贵金属材料制备高灵敏度的表面增强拉曼基底，其中银纳米结构基底的表面增强拉曼效果最好。由于贵金属的价格较高，而电子束蒸镀的方由于空间扩散为球形，大量原料沉积在腔壁上，造成大量浪费。
为了改善其不足，本发明以倾斜生长技术为基本原理，蒸发源束流方向与基片成86-87度，并且采用大量的圆弧结构，粘贴更多的基片，使蒸发出的原料得到更充分应用，并保证每一片基片与蒸发束流的夹角为需要的86至87度。
发明内容
本发明的目的是设计一种新型的能同时大量制备表面增强拉曼基底的基片台。
为了达到上述目的，本发明采用的技术方案是：一种大批量制备表面增强拉曼基底的基片台，其包括环状体及其支撑架，所述环状体上设置多个锥形体，所述锥形体的两个表面粘贴多个基片。
所述锥形体的上边和底边为圆弧曲线。
所述锥形体全部位于竖直方向。
所述锥形圆弧曲线的锥角为6度至8度，并且锥角平分线沿竖直方向。
所述基片台制备表面增强拉曼基底的方法，包括以下步骤：
(1)预处理基片；
(2)将预处理过的基片粘贴在基片台上；
(3)将基片台与蒸发源对齐；
(4)将电子束蒸发腔室抽真空；
(5)在基片台的基片上沉积纳米斜棒阵列薄膜，形成拉曼基底。
进一步，步骤(1)所述预处理为将单面抛光的硅基片用丙酮、无水乙醇、去离子水逐一超声清洗并晾干。
进一步，步骤(2)所述基片均布在锥形体的两个表面。
进一步，步骤(3)所述蒸发源为坩埚，其位于环状体圆心的正下方；所述蒸发源束流方向与基片成86度。
进一步，步骤(4)所述电子束蒸发腔室的真空度为4*10-4Pa。
进一步，步骤(5)所述沉积在室温进行，采用金属银为靶材，控制银的镀率为在基片台的基底上共沉积长度约为600nm的银纳米斜棒阵列薄膜。
本发明的有益效果，本发明的基片台，可以采用倾斜生长法同时在多个基片上沉积银纳米棒。由多基片银纳米棒构成的阵列薄膜，具有较好的产品一致性，可以提高传统制备方法的生产效率。
附图说明
图1为本发明基片台的外观图。
图2为本发明沉积出来的银纳米棒阵列表面增强拉曼基底的电镜照片。
图3为本发明实施例制备的银纳米棒阵列的R6G分子的拉曼增强信号图。
具体实施方式
本发明采用倾斜生长法在基片台上同时沉积多个银纳米棒阵列的表面增强拉曼基底。
下面结合附图1～3和实施例对本发明予以具体说明。下述实施例是说明性的，不是限定性的，不能以下述实施例来限定本发明的保护范围。
实施例1
(1)将单面抛光的硅基片用丙酮、无水乙醇、去离子水逐一超声清洗并晾干；
(2)将预处理过的基片粘贴在基片台上
(3)将基片台的环状体外圆圆心与坩埚对齐
(4)在室温下，采用金属银为靶材将双电子束蒸发镀膜机的腔室抽至真空度为；4*10-4Pa
(5)调整，控制银的镀率为在基片台的基底上共沉积长度约为600nm的银纳米斜棒薄膜；
(6)配制10-5mol/L的R6G溶液；
(7)将步骤(1)～(5)制备的表面增强拉曼基底放入步骤(6)配制的待测溶液，浸泡30分；
(8)将步骤(6)中吸附有痕量亚甲基蓝的表面增强拉曼基底放入拉曼光谱仪，选择波长为785nm的光源，进行拉曼光谱的测量；
可以观察到几个基片的R6G信号峰强信号基本相同，同时可以看到几个基片上的银纳米棒阵列的形貌几乎相同，因此可以说明通过该样品台制备出的表面增强拉曼基底的效果近乎一致，达到了预期的目的。
上述实施例对本发明的技术方案进行了详细说明。显然，本发明并不局限于所描述的实施例。基于本发明中的实施例，熟悉本技术领域的人员还可据此做出多种变化，但任何与本发明等同或相类似的变化都属于本发明保护的范围。

Claims (10)

1.一种大批量制备表面增强拉曼基底的基片台，其特征在于：包括环状体及其支撑架，所述环状体上设置多个锥形体，所述锥形体的两个表面粘贴多个基片。
2.根据权利要求1所述的基片台，其特征在于，所述锥形体的上边和底边为圆弧曲线。
3.根据权利要求1所述的基片台，其特征在于，所述锥形体全部位于竖直方向。
4.根据权利要求2所述的基片台，其特征在于，所述圆弧曲线的锥角为6度至8度，并且锥角平分线沿竖直方向。
5.权利要求1～4任意一项所述基片台制备表面增强拉曼基底的方法，其特征在于，包括以下步骤：
(1)预处理基片；
(2)将预处理过的基片粘贴在基片台上；
(3)将基片台与蒸发源对齐；
(4)将电子束蒸发腔室抽真空；
(5)在基片台的基片上沉积纳米斜棒阵列薄膜，形成拉曼基底。
6.根据权利要求5所述的方法，其特征在于，步骤(1)所述预处理为将单面抛光的硅基片用丙酮、无水乙醇、去离子水逐一超声清洗并晾干。
7.根据权利要求5所述的方法，其特征在于，步骤(2)所述基片均布在锥形体的两个表面。
8.根据权利要求5所述的方法，其特征在于，步骤(3)所述蒸发源为坩埚，其位于环状体圆心的正下方；所述蒸发源束流方向与基片成86度。
9.根据权利要求5所述的方法，其特征在于，步骤(4)所述电子束蒸发腔室的真空度为4*10-4Pa。
10.根据权利要求5所述的方法，其特征在于，步骤(5)所述沉积在室温进行，采用金属银为靶材，控制银的镀率为在基片台的基底上共沉积长度约为600nm的银纳米斜棒阵列薄膜。
CN201910665983.3A 2019-07-23 2019-07-23 一种大批量制备表面增强拉曼基底的基片台 Pending CN110359024A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW461009B (en) * 1999-01-13 2001-10-21 Applied Materials Inc Electrostatic chuck with improved temperature control and puncture resistance
CN1547622A (zh) * 2001-09-17 2004-11-17 住友钛株式会社 一氧化硅蒸镀材料及其制造方法
CN108707867A (zh) * 2018-04-25 2018-10-26 清华大学 一种表面增强拉曼散射基片及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW461009B (en) * 1999-01-13 2001-10-21 Applied Materials Inc Electrostatic chuck with improved temperature control and puncture resistance
CN1547622A (zh) * 2001-09-17 2004-11-17 住友钛株式会社 一氧化硅蒸镀材料及其制造方法
CN108707867A (zh) * 2018-04-25 2018-10-26 清华大学 一种表面增强拉曼散射基片及其制备方法

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