KR20040035743A - 일산화 규소 증착 재료 및 그 제조 방법 - Google Patents
일산화 규소 증착 재료 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20040035743A KR20040035743A KR10-2004-7003038A KR20047003038A KR20040035743A KR 20040035743 A KR20040035743 A KR 20040035743A KR 20047003038 A KR20047003038 A KR 20047003038A KR 20040035743 A KR20040035743 A KR 20040035743A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon monoxide
- gas
- deposition material
- precipitation
- silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Abstract
Description
No. | 석출의 조건 | 래틀러 값(%) | 스플래시발생상황 | ||
압력(Pa) | 경사각(도) | ||||
실시예 | 1 | 40 | 1 | 0.9 | 적다 |
2 | 40 | 2 | 0.8 | 적다 | |
3 | 40 | 10 | 0.8 | 적다 | |
4 | 40 | 20 | 0.8 | 적다 | |
5 | 40 | 45 | 0.8 | 적다 | |
6 | 25 | 1 | 0.8 | 적다 | |
7 | 25 | 2 | 0.6 | 매우 적다 | |
8 | 25 | 10 | 0.5 | 매우 적다 | |
9 | 25 | 20 | 0.5 | 매우 적다 | |
10 | 25 | 45 | 0.5 | 매우 적다 | |
11 | 20 | 8 | 0.5 | 매우 적다 | |
12 | 10 | 10 | 0.6 | 매우 적다 | |
13 | 7 | 10 | 0.8 | 적다 | |
비교예 | 1 | 60 | 0 | 2.0 | 많다 |
2 | 60 | 10 | 1.6 | 많다 | |
3 | 40 | 0 | 1.3 | 많다 | |
4 | 40 | 60 | - | - | |
5 | 25 | 0 | 1.1 | 많다 | |
6 | 25 | 60 | - | - | |
7 | 5 | 10 | 1.2 | 많다 |
Claims (5)
- 래틀러 시험의 중량 감소율(래틀러 값)이 1.0% 이하인 성질과 상태를 가지는 것을 특징으로 하는 진공 응축법에 의한 일산화 규소 증착 재료.
- 원료를 가열 승화시킨 증발 원료를 석출 기체의 표면에 석출, 응축시켜 일산화 규소 증착 재료를 얻을 때에, 관상체의 상부측 내경을 하부측보다 작은 직경으로 해서 관상체의 내주벽이 경사면으로 된 석출 기체를 사용하여 상기 경사 내주면에 석출, 응축시키는 것을 특징으로 하는 일산화 규소 증착 재료의 제조 방법.
- 제2항에 있어서,상기 관상체의 내주벽이 경사면으로 된 석출 기체의 상기 관상체의 내주벽이 분할되어 있는 것을 특징으로 하는 일산화 규소 증착 재료의 제조 방법.
- 제2항에 있어서,상기 석출 기체 내의 분위기는 7Pa ~ 40Pa의 진공 분위기인 것을 특징으로 하는 일산화 규소 증착 재료의 제조 방법.
- 제2항에 있어서,상기 석출 기체의 경사 내주면은 수직선에 대해 1 ~ 45도 기울어진 경사면인것을 특징으로 하는 일산화 규소 증착 재료의 제조 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001281524 | 2001-09-17 | ||
JPJP-P-2001-00281524 | 2001-09-17 | ||
PCT/JP2002/009472 WO2003025246A1 (fr) | 2001-09-17 | 2002-09-13 | Materiau de monoxyde de silicium pour depot par evaporation sous vide et procede de preparation de celui-ci |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040035743A true KR20040035743A (ko) | 2004-04-29 |
KR100583795B1 KR100583795B1 (ko) | 2006-05-26 |
Family
ID=19105336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047003038A KR100583795B1 (ko) | 2001-09-17 | 2002-09-13 | 일산화 규소 증착 재료 및 그 제조 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040241075A1 (ko) |
EP (1) | EP1443126B1 (ko) |
JP (1) | JP4252452B2 (ko) |
KR (1) | KR100583795B1 (ko) |
CN (1) | CN100516283C (ko) |
DE (1) | DE60226478D1 (ko) |
WO (1) | WO2003025246A1 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1318207A4 (en) * | 2000-08-31 | 2006-08-16 | Sumitomo Titanium Corp | SILICON MONOXIDE-GAS PHASE SEPARATING MATERIAL, METHOD OF MANUFACTURING THEREOF, RAW MATERIAL FOR THE PRODUCTION AND DEVICE FOR THE PRODUCTION THEREOF |
CN1247482C (zh) * | 2001-07-26 | 2006-03-29 | 住友钛株式会社 | 一氧化硅烧结体及其制造方法 |
JP3828434B2 (ja) * | 2002-02-22 | 2006-10-04 | 住友チタニウム株式会社 | 一酸化ケイ素の焼結体およびその製造方法 |
US20070059601A1 (en) * | 2003-04-28 | 2007-03-15 | Yoshitake Natsume | Negative electrode for lithium secondary cell, lithium secondary cell employing the negative electrode, film deposition material b used for forming negative electrode, and process for producing negative electrode |
JP4374330B2 (ja) * | 2005-06-16 | 2009-12-02 | 株式会社大阪チタニウムテクノロジーズ | 一酸化珪素系蒸着材料及びその製造方法 |
JP4900573B2 (ja) * | 2006-04-24 | 2012-03-21 | 信越化学工業株式会社 | 酸化珪素粉末の製造方法 |
JP4966151B2 (ja) * | 2007-03-15 | 2012-07-04 | 新日鉄マテリアルズ株式会社 | 一酸化珪素蒸着材料の製造方法およびその製造装置 |
KR20170088918A (ko) * | 2015-07-08 | 2017-08-02 | 썬쩐 비티아르 뉴 에너지 머티어리얼스 아이엔씨이 | 실리콘 산화물의 제조 장치 및 제조 방법 |
CN106966398B (zh) * | 2017-04-19 | 2023-08-08 | 合肥科晶材料技术有限公司 | 一种两源可控的SiO生产系统和生产方法 |
CN109210930B (zh) * | 2018-09-26 | 2024-05-17 | 溧阳天目先导电池材料科技有限公司 | 一种生产一氧化硅的多室卧式真空炉及一氧化硅制备方法 |
CN110359024A (zh) * | 2019-07-23 | 2019-10-22 | 清华大学 | 一种大批量制备表面增强拉曼基底的基片台 |
CN113501527B (zh) * | 2021-09-06 | 2021-11-16 | 北京壹金新能源科技有限公司 | 一种制备一氧化硅的方法 |
CN114180585A (zh) * | 2021-11-30 | 2022-03-15 | 长沙矿冶研究院有限责任公司 | 一种批量制备高纯一氧化硅的方法及装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4022050B1 (ko) * | 1962-06-22 | 1965-09-30 | ||
JPS6227318A (ja) * | 1985-07-29 | 1987-02-05 | Kawasaki Steel Corp | Sio微粉末の製造方法およびその装置 |
JPH05171412A (ja) * | 1991-12-18 | 1993-07-09 | Mitsubishi Heavy Ind Ltd | 一酸化ケイ素蒸着用材料の製造方法 |
JP3584096B2 (ja) * | 1995-10-11 | 2004-11-04 | 住友チタニウム株式会社 | 酸化珪素の製造方法 |
JP4081524B2 (ja) * | 1998-03-31 | 2008-04-30 | 株式会社マーレ フィルターシステムズ | 薬剤供給シャワー用カートリッジへの薬剤充填方法及びカートリッジ |
GB2357497A (en) * | 1999-12-22 | 2001-06-27 | Degussa | Hydrophobic silica |
JP3824047B2 (ja) * | 2000-02-04 | 2006-09-20 | 信越化学工業株式会社 | 非晶質酸化珪素粉末の製造方法 |
-
2002
- 2002-09-13 DE DE60226478T patent/DE60226478D1/de not_active Expired - Lifetime
- 2002-09-13 EP EP02765557A patent/EP1443126B1/en not_active Expired - Fee Related
- 2002-09-13 CN CNB028166213A patent/CN100516283C/zh not_active Expired - Fee Related
- 2002-09-13 US US10/489,074 patent/US20040241075A1/en not_active Abandoned
- 2002-09-13 KR KR1020047003038A patent/KR100583795B1/ko not_active IP Right Cessation
- 2002-09-13 JP JP2003530015A patent/JP4252452B2/ja not_active Expired - Lifetime
- 2002-09-13 WO PCT/JP2002/009472 patent/WO2003025246A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20040241075A1 (en) | 2004-12-02 |
DE60226478D1 (de) | 2008-06-19 |
EP1443126A4 (en) | 2007-05-02 |
EP1443126A1 (en) | 2004-08-04 |
KR100583795B1 (ko) | 2006-05-26 |
CN100516283C (zh) | 2009-07-22 |
CN1547622A (zh) | 2004-11-17 |
WO2003025246A1 (fr) | 2003-03-27 |
JP4252452B2 (ja) | 2009-04-08 |
JPWO2003025246A1 (ja) | 2004-12-24 |
EP1443126B1 (en) | 2008-05-07 |
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