DE60226478D1 - Material zur dampfabscheidung von siliciummonoxid und herstellungsverfahren dafür - Google Patents

Material zur dampfabscheidung von siliciummonoxid und herstellungsverfahren dafür

Info

Publication number
DE60226478D1
DE60226478D1 DE60226478T DE60226478T DE60226478D1 DE 60226478 D1 DE60226478 D1 DE 60226478D1 DE 60226478 T DE60226478 T DE 60226478T DE 60226478 T DE60226478 T DE 60226478T DE 60226478 D1 DE60226478 D1 DE 60226478D1
Authority
DE
Germany
Prior art keywords
manufacturing
silicon monoxide
steam separation
steam
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60226478T
Other languages
English (en)
Inventor
Kazuo Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Titanium Technologies Co Ltd
Original Assignee
Osaka Titanium Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Titanium Technologies Co Ltd filed Critical Osaka Titanium Technologies Co Ltd
Application granted granted Critical
Publication of DE60226478D1 publication Critical patent/DE60226478D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
DE60226478T 2001-09-17 2002-09-13 Material zur dampfabscheidung von siliciummonoxid und herstellungsverfahren dafür Expired - Lifetime DE60226478D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001281524 2001-09-17
PCT/JP2002/009472 WO2003025246A1 (fr) 2001-09-17 2002-09-13 Materiau de monoxyde de silicium pour depot par evaporation sous vide et procede de preparation de celui-ci

Publications (1)

Publication Number Publication Date
DE60226478D1 true DE60226478D1 (de) 2008-06-19

Family

ID=19105336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60226478T Expired - Lifetime DE60226478D1 (de) 2001-09-17 2002-09-13 Material zur dampfabscheidung von siliciummonoxid und herstellungsverfahren dafür

Country Status (7)

Country Link
US (1) US20040241075A1 (de)
EP (1) EP1443126B1 (de)
JP (1) JP4252452B2 (de)
KR (1) KR100583795B1 (de)
CN (1) CN100516283C (de)
DE (1) DE60226478D1 (de)
WO (1) WO2003025246A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002018669A1 (fr) * 2000-08-31 2002-03-07 Sumitomo Titanium Corporation Materiau de depot par evaporation sous vide de monoxyde de silicium, son procede de production, la matiere premiere pour sa production et appareil de production
JP4729253B2 (ja) * 2001-07-26 2011-07-20 株式会社大阪チタニウムテクノロジーズ 一酸化けい素焼結体および一酸化けい素焼結ターゲット
JP3828434B2 (ja) * 2002-02-22 2006-10-04 住友チタニウム株式会社 一酸化ケイ素の焼結体およびその製造方法
KR20090081438A (ko) * 2003-04-28 2009-07-28 오사카 티타늄 테크놀로지스 캄파니 리미티드 리튬 2차 전지용 음극, 당해 음극을 사용하는 리튬 2차 전지, 당해 음극 형성에 사용하는 막 형성용 재료 및 당해 음극의 제조방법
JP4374330B2 (ja) * 2005-06-16 2009-12-02 株式会社大阪チタニウムテクノロジーズ 一酸化珪素系蒸着材料及びその製造方法
JP4900573B2 (ja) * 2006-04-24 2012-03-21 信越化学工業株式会社 酸化珪素粉末の製造方法
JP4966151B2 (ja) * 2007-03-15 2012-07-04 新日鉄マテリアルズ株式会社 一酸化珪素蒸着材料の製造方法およびその製造装置
KR20170088918A (ko) * 2015-07-08 2017-08-02 썬쩐 비티아르 뉴 에너지 머티어리얼스 아이엔씨이 실리콘 산화물의 제조 장치 및 제조 방법
CN106966398B (zh) * 2017-04-19 2023-08-08 合肥科晶材料技术有限公司 一种两源可控的SiO生产系统和生产方法
CN109210930B (zh) * 2018-09-26 2024-05-17 溧阳天目先导电池材料科技有限公司 一种生产一氧化硅的多室卧式真空炉及一氧化硅制备方法
CN110359024A (zh) * 2019-07-23 2019-10-22 清华大学 一种大批量制备表面增强拉曼基底的基片台
CN113501527B (zh) * 2021-09-06 2021-11-16 北京壹金新能源科技有限公司 一种制备一氧化硅的方法
CN114180585A (zh) * 2021-11-30 2022-03-15 长沙矿冶研究院有限责任公司 一种批量制备高纯一氧化硅的方法及装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4022050B1 (de) * 1962-06-22 1965-09-30
JPS6227318A (ja) * 1985-07-29 1987-02-05 Kawasaki Steel Corp Ｓｉｏ微粉末の製造方法およびその装置
JPH05171412A (ja) * 1991-12-18 1993-07-09 Mitsubishi Heavy Ind Ltd 一酸化ケイ素蒸着用材料の製造方法
JP3584096B2 (ja) * 1995-10-11 2004-11-04 住友チタニウム株式会社 酸化珪素の製造方法
JP4081524B2 (ja) * 1998-03-31 2008-04-30 株式会社マーレ フィルターシステムズ 薬剤供給シャワー用カートリッジへの薬剤充填方法及びカートリッジ
GB2357497A (en) * 1999-12-22 2001-06-27 Degussa Hydrophobic silica
JP3824047B2 (ja) * 2000-02-04 2006-09-20 信越化学工業株式会社 非晶質酸化珪素粉末の製造方法

Also Published As

Publication number Publication date
KR100583795B1 (ko) 2006-05-26
CN100516283C (zh) 2009-07-22
JP4252452B2 (ja) 2009-04-08
WO2003025246A1 (fr) 2003-03-27
US20040241075A1 (en) 2004-12-02
JPWO2003025246A1 (ja) 2004-12-24
KR20040035743A (ko) 2004-04-29
EP1443126A1 (de) 2004-08-04
CN1547622A (zh) 2004-11-17
EP1443126B1 (de) 2008-05-07
EP1443126A4 (de) 2007-05-02

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