JP4243995B2 - 分極反転部の製造方法および光デバイス - Google Patents
分極反転部の製造方法および光デバイス Download PDFInfo
- Publication number
- JP4243995B2 JP4243995B2 JP2003297042A JP2003297042A JP4243995B2 JP 4243995 B2 JP4243995 B2 JP 4243995B2 JP 2003297042 A JP2003297042 A JP 2003297042A JP 2003297042 A JP2003297042 A JP 2003297042A JP 4243995 B2 JP4243995 B2 JP 4243995B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- substrate
- polarization inversion
- electrode
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000010287 polarization Effects 0.000 title claims description 25
- 230000003287 optical effect Effects 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 52
- 239000013078 crystal Substances 0.000 claims description 35
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 239000006104 solid solution Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 239000000395 magnesium oxide Substances 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000003921 oil Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
- G02F1/3775—Non-linear optics for second-harmonic generation in an optical waveguide structure with a periodic structure, e.g. domain inversion, for quasi-phase-matching [QPM]
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003297042A JP4243995B2 (ja) | 2003-08-21 | 2003-08-21 | 分極反転部の製造方法および光デバイス |
DE602004014940T DE602004014940D1 (de) | 2003-08-21 | 2004-08-05 | Herstellungsverfahren für eine polarisationsumkehreinheit und optische einrichtung |
PCT/JP2004/011575 WO2005019921A1 (ja) | 2003-08-21 | 2004-08-05 | 分極反転部の製造方法および光デバイス |
CNB200480023906XA CN100405204C (zh) | 2003-08-21 | 2004-08-05 | 极化反转部的制造方法 |
EP04748298A EP1657590B1 (de) | 2003-08-21 | 2004-08-05 | Herstellungsverfahren für eine polarisationsumkehreinheit und optische einrichtung |
US11/336,308 US7453625B2 (en) | 2003-08-21 | 2006-01-20 | Method of producing domain inversion parts and optical devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003297042A JP4243995B2 (ja) | 2003-08-21 | 2003-08-21 | 分極反転部の製造方法および光デバイス |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005070192A JP2005070192A (ja) | 2005-03-17 |
JP2005070192A5 JP2005070192A5 (de) | 2006-04-06 |
JP4243995B2 true JP4243995B2 (ja) | 2009-03-25 |
Family
ID=34213632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003297042A Expired - Lifetime JP4243995B2 (ja) | 2003-08-21 | 2003-08-21 | 分極反転部の製造方法および光デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US7453625B2 (de) |
EP (1) | EP1657590B1 (de) |
JP (1) | JP4243995B2 (de) |
CN (1) | CN100405204C (de) |
DE (1) | DE602004014940D1 (de) |
WO (1) | WO2005019921A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4803546B2 (ja) * | 2006-01-04 | 2011-10-26 | プレサイスゲージ株式会社 | 波長変換導波路素子及びその製造方法 |
WO2008056829A1 (fr) * | 2006-11-09 | 2008-05-15 | Ngk Insulators, Ltd. | Procédé de fabrication d'un substrat de guide d'onde optique |
JP5235994B2 (ja) * | 2007-07-31 | 2013-07-10 | ナンジン シーキュー レーザー テクノロジー リミテッド | 強誘電体ドメイン反転法 |
JP2009092843A (ja) * | 2007-10-05 | 2009-04-30 | Ngk Insulators Ltd | 周期分極反転構造の製造方法 |
JP4642065B2 (ja) * | 2007-12-13 | 2011-03-02 | 日本碍子株式会社 | 周期分極反転部の製造方法 |
GB0802852D0 (en) * | 2008-02-15 | 2008-03-26 | Univ Southampton | A process for poling a ferroelectric material doped with a metal |
JP4646333B2 (ja) | 2008-03-17 | 2011-03-09 | 日本碍子株式会社 | 高調波発生装置 |
JP5300664B2 (ja) * | 2008-10-30 | 2013-09-25 | 日本碍子株式会社 | 分極反転部分の製造方法 |
JP2012078443A (ja) * | 2010-09-30 | 2012-04-19 | Dainippon Screen Mfg Co Ltd | 光学デバイス、光学デバイスの製造方法および露光装置 |
DE102010053273B4 (de) * | 2010-12-02 | 2015-03-26 | Epcos Ag | Elektroakustisches Bauelement und Verfahren zum Herstellen eines elektroakustischen Bauelements |
CN103257508A (zh) * | 2012-02-20 | 2013-08-21 | 北京中视中科光电技术有限公司 | 铁电晶体材料的周期极化结构及其极化方法 |
CN105256376B (zh) * | 2015-11-18 | 2017-12-22 | 中国科学技术大学 | 一种控制铁电单晶电致形变取向的方法 |
JP6591117B2 (ja) | 2017-10-10 | 2019-10-16 | 日本碍子株式会社 | 周期分極反転構造の製造方法 |
US10274808B1 (en) * | 2018-03-14 | 2019-04-30 | Bae Systems Information And Electronic Systems Integration Inc. | Reconfigurable quasi-phase matching for field-programmable nonlinear photonics |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3332363B2 (ja) * | 1994-08-31 | 2002-10-07 | 松下電器産業株式会社 | 分極反転領域の製造方法ならびにそれを利用した光波長変換素子及びその製造方法 |
JP3059080B2 (ja) | 1994-08-31 | 2000-07-04 | 松下電器産業株式会社 | 分極反転領域の製造方法ならびにそれを利用した光波長変換素子及び短波長光源 |
DE69531917T2 (de) | 1994-08-31 | 2004-08-19 | Matsushita Electric Industrial Co., Ltd., Kadoma | Verfahren zur Herstellung von invertierten Domänen und eines optischen Wellenlängenkonverters mit denselben |
JPH08160480A (ja) * | 1994-12-09 | 1996-06-21 | Hewlett Packard Co <Hp> | 分極反転層の形成方法および波長変換素子の製造方法 |
ATE327523T1 (de) * | 1996-01-12 | 2006-06-15 | Cobolt Ab | Methode zur polarisation optischer kristalle |
JP2000066254A (ja) * | 1998-08-18 | 2000-03-03 | Matsushita Electric Ind Co Ltd | 分極反転構造の形成方法 |
JP2000066050A (ja) * | 1998-08-19 | 2000-03-03 | Ngk Insulators Ltd | 光導波路部品の製造方法及び光導波路部品 |
JP2002072267A (ja) * | 2000-08-25 | 2002-03-12 | National Institute For Materials Science | 光機能素子、該素子用単結晶基板、およびその使用方法 |
JP2002139755A (ja) * | 2000-11-01 | 2002-05-17 | Fuji Photo Film Co Ltd | 波長変換素子及びその製造方法 |
-
2003
- 2003-08-21 JP JP2003297042A patent/JP4243995B2/ja not_active Expired - Lifetime
-
2004
- 2004-08-05 WO PCT/JP2004/011575 patent/WO2005019921A1/ja active IP Right Grant
- 2004-08-05 DE DE602004014940T patent/DE602004014940D1/de not_active Expired - Lifetime
- 2004-08-05 CN CNB200480023906XA patent/CN100405204C/zh not_active Expired - Lifetime
- 2004-08-05 EP EP04748298A patent/EP1657590B1/de not_active Expired - Lifetime
-
2006
- 2006-01-20 US US11/336,308 patent/US7453625B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP1657590B1 (de) | 2008-07-09 |
JP2005070192A (ja) | 2005-03-17 |
CN1839342A (zh) | 2006-09-27 |
EP1657590A1 (de) | 2006-05-17 |
DE602004014940D1 (de) | 2008-08-21 |
EP1657590A4 (de) | 2006-09-20 |
WO2005019921A1 (ja) | 2005-03-03 |
CN100405204C (zh) | 2008-07-23 |
US7453625B2 (en) | 2008-11-18 |
US20060133767A1 (en) | 2006-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7453625B2 (en) | Method of producing domain inversion parts and optical devices | |
JP2000066254A (ja) | 分極反転構造の形成方法 | |
JP2011514552A (ja) | 金属をドープされた強誘電体材料を分極させる方法 | |
JP4721455B2 (ja) | 周期分極反転構造の製造方法 | |
JPH08220578A (ja) | 分極反転領域の製造方法ならびにそれを利用した光波長変換素子及びその製造方法 | |
JP4400816B2 (ja) | 周期分極反転構造の製造方法および光デバイス | |
JP5300664B2 (ja) | 分極反転部分の製造方法 | |
JP4372489B2 (ja) | 周期分極反転構造の製造方法 | |
TW200419283A (en) | Method of fabricating two-dimensional ferroelectric nonlinear crystals with periodically inverted domains | |
EP0960222B1 (de) | Herstellung einer invertiert gepolten domänenstruktur aus einem ferroelektrischen kristall | |
JP4756706B2 (ja) | 分極反転構造の製造方法 | |
JP3838910B2 (ja) | 強誘電体の分極反転方法および光波長変換素子の作製方法 | |
JP4642065B2 (ja) | 周期分極反転部の製造方法 | |
JP4974872B2 (ja) | 周期分極反転構造の製造方法 | |
WO2005124447A1 (ja) | 分極反転部の製造方法 | |
JP4646150B2 (ja) | 周期分極反転構造の製造方法 | |
JP2003307757A (ja) | 分極反転部の製造方法 | |
JPH08271941A (ja) | 光デバイスの製造方法 | |
Bassignot et al. | Hybrid wafers based on a “Silicon/PPLN thin film” stack for optical and Radio-Frequency applications | |
JP2016024423A (ja) | 波長変換素子の製造方法および波長変換素子 | |
JP2010107731A (ja) | 強誘電体バルク素子 | |
JP2020145530A (ja) | 弾性波装置 | |
KR20030048386A (ko) | 접촉전극과 전해액을 이용한 주기적으로 분극반전된 리튬나오베이트(LiNbO3) 웨이퍼(wafer)의 제작방법 | |
JP2017083560A (ja) | 積層体および光学素子の製造方法 | |
Kundys et al. | Reconfigurable single photon sources based on functional materials |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060220 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060220 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20081224 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20081224 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4243995 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120116 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130116 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140116 Year of fee payment: 5 |
|
EXPY | Cancellation because of completion of term |