JP4239352B2 - 電子装置の製造方法 - Google Patents

電子装置の製造方法 Download PDF

Info

Publication number
JP4239352B2
JP4239352B2 JP2000092950A JP2000092950A JP4239352B2 JP 4239352 B2 JP4239352 B2 JP 4239352B2 JP 2000092950 A JP2000092950 A JP 2000092950A JP 2000092950 A JP2000092950 A JP 2000092950A JP 4239352 B2 JP4239352 B2 JP 4239352B2
Authority
JP
Japan
Prior art keywords
manufacturing
electronic device
film
chip
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000092950A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001283169A (ja
JP2001283169A5 (enExample
Inventor
光雄 宇佐美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000092950A priority Critical patent/JP4239352B2/ja
Priority to US09/818,638 priority patent/US6660557B2/en
Publication of JP2001283169A publication Critical patent/JP2001283169A/ja
Priority to US10/676,016 priority patent/US7056769B2/en
Publication of JP2001283169A5 publication Critical patent/JP2001283169A5/ja
Priority to US11/411,884 priority patent/US7459341B2/en
Application granted granted Critical
Publication of JP4239352B2 publication Critical patent/JP4239352B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07718Constructional details, e.g. mounting of circuits in the carrier the record carrier being manufactured in a continuous process, e.g. using endless rolls
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07745Mounting details of integrated circuit chips
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07745Mounting details of integrated circuit chips
    • G06K19/07747Mounting details of integrated circuit chips at least one of the integrated circuit chips being mounted as a module
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5388Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates for flat cards, e.g. credit cards
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/645Inductive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/30Resonant antennas with feed to end of elongated active element, e.g. unipole
    • H01Q9/40Element having extended radiating surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/30Resonant antennas with feed to end of elongated active element, e.g. unipole
    • H01Q9/42Resonant antennas with feed to end of elongated active element, e.g. unipole with folded element, the folded parts being spaced apart a small fraction of the operating wavelength
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68313Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/274Manufacturing methods by blanket deposition of the material of the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112Aligning
    • H01L2224/81136Aligning involving guiding structures, e.g. spacers or supporting members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83136Aligning involving guiding structures, e.g. spacers or supporting members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19042Component type being an inductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49121Beam lead frame or beam lead device

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Credit Cards Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2000092950A 2000-03-28 2000-03-28 電子装置の製造方法 Expired - Fee Related JP4239352B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000092950A JP4239352B2 (ja) 2000-03-28 2000-03-28 電子装置の製造方法
US09/818,638 US6660557B2 (en) 2000-03-28 2001-03-28 Method of manufacturing an electronic device
US10/676,016 US7056769B2 (en) 2000-03-28 2003-10-02 Method of manufacturing an electronic device
US11/411,884 US7459341B2 (en) 2000-03-28 2006-04-27 Method of manufacturing an electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000092950A JP4239352B2 (ja) 2000-03-28 2000-03-28 電子装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001283169A JP2001283169A (ja) 2001-10-12
JP2001283169A5 JP2001283169A5 (enExample) 2005-10-27
JP4239352B2 true JP4239352B2 (ja) 2009-03-18

Family

ID=18608207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000092950A Expired - Fee Related JP4239352B2 (ja) 2000-03-28 2000-03-28 電子装置の製造方法

Country Status (2)

Country Link
US (3) US6660557B2 (enExample)
JP (1) JP4239352B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4239352B2 (ja) * 2000-03-28 2009-03-18 株式会社日立製作所 電子装置の製造方法
JP3892703B2 (ja) * 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
WO2003096595A2 (en) * 2002-05-08 2003-11-20 Drexler Technology Corporation Method of making secure personal data card
JP3898666B2 (ja) * 2003-04-28 2007-03-28 松下電器産業株式会社 固体撮像装置およびその製造方法
US7629667B2 (en) * 2003-08-28 2009-12-08 Hitachi, Ltd. Semiconductor device including an on-chip coil antenna formed on a device layer which is formed on an oxide film layer
JP4106003B2 (ja) * 2003-09-03 2008-06-25 松下電器産業株式会社 固体撮像装置の製造方法
EP1693785A4 (en) * 2003-12-10 2008-07-30 Oji Paper Co BAND WITH EMBEDDED IC-CHIP AND LEAF WITH EMBEDDED IC-CHIP
KR100577527B1 (ko) * 2003-12-29 2006-05-10 매그나칩 반도체 유한회사 고주파 소자 및 그 제조 방법
JP2006039854A (ja) * 2004-07-26 2006-02-09 Brother Ind Ltd タグテープロール及びタグラベル作成装置用カートリッジ
US20070098997A1 (en) * 2005-11-02 2007-05-03 Bayer Materialscience Llc Composite articles and a process for their production
JP4796628B2 (ja) * 2006-06-02 2011-10-19 株式会社日立製作所 Icタグ用インレットの製造方法
JP3980624B1 (ja) * 2006-09-20 2007-09-26 インターナショナル・ビジネス・マシーンズ・コーポレーション 基板上の半導体部品の薄型化
EP2085914B1 (en) * 2006-11-07 2014-03-12 Toppan Forms Co., Ltd. Window base material, card having module housed therein, and method for manufacturing card having module housed therein
JP4860436B2 (ja) * 2006-11-07 2012-01-25 トッパン・フォームズ株式会社 Icカードおよびその製造方法
US20080241991A1 (en) * 2007-03-26 2008-10-02 National Semiconductor Corporation Gang flipping for flip-chip packaging
US9195929B2 (en) * 2013-08-05 2015-11-24 A-Men Technology Corporation Chip card assembling structure and method thereof
US10020285B2 (en) 2014-09-04 2018-07-10 Infineon Technologies Austria Ag Method of producing a semiconductor device and a semiconductor device
KR102365285B1 (ko) * 2014-11-05 2022-02-18 에베 그룹 에. 탈너 게엠베하 제품 기판을 코팅하기 위한 방법 및 장치
KR102417917B1 (ko) 2016-04-26 2022-07-07 삼성전자주식회사 공정 시스템 및 그 동작 방법
CN108231651B (zh) * 2017-12-26 2020-02-21 厦门市三安光电科技有限公司 微元件转移装置和转移方法

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063993A (en) * 1975-07-07 1977-12-20 National Semiconductor Corporation Method of making gang bonding interconnect tape for semiconductive devices
DE2920012C2 (de) * 1979-05-17 1988-09-29 GAO Gesellschaft für Automation und Organisation mbH, 8000 München Ausweiskarte mit IC-Baustein und Verfahren zur Herstellung einer derartigen Ausweiskarte
JPS6190272A (ja) 1984-10-09 1986-05-08 Sharp Corp 辞書機能を用いた翻訳方式
JPH01108095A (ja) * 1987-10-20 1989-04-25 Ryoden Kasei Co Ltd Icカード
JPH0353546A (ja) * 1989-07-21 1991-03-07 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置
EP0487782B1 (de) * 1990-11-30 1995-11-29 Siemens Aktiengesellschaft Verfahren zum Beloten von Leiterplatten
JPH04259520A (ja) * 1991-02-13 1992-09-16 Nippon Steel Corp 樹脂成形金型及びフレキシブルテープ
JP2994510B2 (ja) * 1992-02-10 1999-12-27 ローム株式会社 半導体装置およびその製法
US5544017A (en) * 1992-08-05 1996-08-06 Fujitsu Limited Multichip module substrate
CA2101293C (en) * 1992-08-05 2004-06-29 David A. Nicholas Articulating endoscopic surgical apparatus
US5776796A (en) * 1994-05-19 1998-07-07 Tessera, Inc. Method of encapsulating a semiconductor package
US6184475B1 (en) * 1994-09-29 2001-02-06 Fujitsu Limited Lead-free solder composition with Bi, In and Sn
US5524765A (en) * 1994-11-15 1996-06-11 Tempo G Carrier tape packaging system utilizing a layer of gel for retaining small components
DE69501632T2 (de) * 1994-11-21 1998-07-23 Apic Yamada Corp Harzformmaschine mit Trennfolie
JP3197788B2 (ja) 1995-05-18 2001-08-13 株式会社日立製作所 半導体装置の製造方法
DE19528730A1 (de) * 1995-08-04 1997-02-06 Giesecke & Devrient Gmbh Verfahren zur Herstellung eines Datenträgers
US6224690B1 (en) * 1995-12-22 2001-05-01 International Business Machines Corporation Flip-Chip interconnections using lead-free solders
MY118036A (en) * 1996-01-22 2004-08-30 Lintec Corp Wafer dicing/bonding sheet and process for producing semiconductor device
US6080606A (en) * 1996-03-26 2000-06-27 The Trustees Of Princeton University Electrophotographic patterning of thin film circuits
US6046499A (en) * 1996-03-27 2000-04-04 Kabushiki Kaisha Toshiba Heat transfer configuration for a semiconductor device
JPH10264560A (ja) 1997-03-25 1998-10-06 Seiko Precision Kk Icカードの製造方法
BR9804917A (pt) * 1997-05-19 2000-01-25 Hitachi Maxell Ltda Módulo de circuito integrado flexìvel e processos para produzir um módulo de circuito integrado flexìvel e um portador de informação.
US6184109B1 (en) * 1997-07-23 2001-02-06 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6013535A (en) * 1997-08-05 2000-01-11 Micron Technology, Inc. Method for applying adhesives to a lead frame
KR20010023027A (ko) * 1997-08-19 2001-03-26 가나이 쓰토무 범프 전극 형성 방법 및 반도체 장치 제조 방법
US6024285A (en) * 1997-08-19 2000-02-15 Micron Technology, Inc. Wireless communication devices and methods of forming wireless communication devices
KR100386833B1 (ko) * 1997-08-27 2003-06-09 나가다 죠스게 구상반도체 디바이스와 그 제조방법 그리고 구상반도체 디바이스
EP1031939B1 (en) * 1997-11-14 2005-09-14 Toppan Printing Co., Ltd. Composite ic card
JPH11161760A (ja) * 1997-11-26 1999-06-18 Hitachi Ltd 薄型電子回路部品及びその製造方法及びその製造装置
JP3936840B2 (ja) * 1997-12-22 2007-06-27 株式会社日立製作所 半導体装置およびその製造方法
US6057174A (en) * 1998-01-07 2000-05-02 Seiko Epson Corporation Semiconductor device, method of fabricating the same, and electronic apparatus
JP4562820B2 (ja) * 1998-03-02 2010-10-13 富士フイルム株式会社 固体撮像素子の取付方法
JP4075138B2 (ja) 1998-06-05 2008-04-16 凸版印刷株式会社 非接触icカード用検査装置および検査方法
US6239480B1 (en) * 1998-07-06 2001-05-29 Clear Logic, Inc. Modified lead frame for improved parallelism of a die to package
AU5651699A (en) * 1998-09-18 2000-04-10 Hitachi Maxell, Ltd. Noncontact communication semiconductor device
JP2000114204A (ja) * 1998-10-01 2000-04-21 Mitsubishi Electric Corp ウエハシート及びこれを用いた半導体装置の製造方法並びに半導体製造装置
US6630370B2 (en) * 1998-10-02 2003-10-07 Shinko Electric Industries Co., Ltd. Process for manufacturing IC card
JP3441382B2 (ja) * 1998-10-14 2003-09-02 日本電信電話株式会社 半導体装置の製造方法
JP3643488B2 (ja) * 1998-10-30 2005-04-27 株式会社日立製作所 Icカード
DE69941548D1 (de) * 1998-11-30 2009-11-26 Hitachi Ltd Verfahren zur Montage eines elektronischen Schaltungschips
US6569710B1 (en) * 1998-12-03 2003-05-27 International Business Machines Corporation Panel structure with plurality of chip compartments for providing high volume of chip modules
US6214640B1 (en) * 1999-02-10 2001-04-10 Tessera, Inc. Method of manufacturing a plurality of semiconductor packages
JP3504543B2 (ja) * 1999-03-03 2004-03-08 株式会社日立製作所 半導体素子の分離方法およびその装置並びに半導体素子の搭載方法
WO2000054324A1 (en) * 1999-03-11 2000-09-14 Seiko Epson Corporation Flexible wiring substrate, film carrier, tapelike semiconductor device, semiconductor device, method of manufacture of semiconductor device, circuit board, and electronic device
US6110806A (en) * 1999-03-26 2000-08-29 International Business Machines Corporation Process for precision alignment of chips for mounting on a substrate
JP2000311959A (ja) * 1999-04-27 2000-11-07 Sanyo Electric Co Ltd 半導体装置とその製造方法
US6147662A (en) * 1999-09-10 2000-11-14 Moore North America, Inc. Radio frequency identification tags and labels
JP4299414B2 (ja) * 1999-10-12 2009-07-22 富士通マイクロエレクトロニクス株式会社 コンビネーションカード、icカード用モジュール及びコンビネーションカードの製造方法
US6402013B2 (en) * 1999-12-03 2002-06-11 Senju Metal Industry Co., Ltd Thermosetting soldering flux and soldering process
ATE280976T1 (de) * 2000-03-24 2004-11-15 Infineon Technologies Ag Gehäuse für biometrische sensorchips
JP4239352B2 (ja) * 2000-03-28 2009-03-18 株式会社日立製作所 電子装置の製造方法
JP3485525B2 (ja) * 2000-07-06 2004-01-13 沖電気工業株式会社 半導体装置の製造方法
JP2002096974A (ja) * 2000-09-22 2002-04-02 Oki Electric Ind Co Ltd 搬送用リールとそれを用いた搬送方法、及び電子装置の製造方法
US6357664B1 (en) * 2001-05-24 2002-03-19 Identicard Systems Incorporated Identification card utilizing an integrated circuit
US6514795B1 (en) * 2001-10-10 2003-02-04 Micron Technology, Inc. Packaged stacked semiconductor die and method of preparing same
JP4523223B2 (ja) * 2002-04-26 2010-08-11 株式会社日立製作所 レーダセンサ

Also Published As

Publication number Publication date
US6660557B2 (en) 2003-12-09
JP2001283169A (ja) 2001-10-12
US20040063243A1 (en) 2004-04-01
US20020016020A1 (en) 2002-02-07
US7459341B2 (en) 2008-12-02
US20060189040A1 (en) 2006-08-24
US7056769B2 (en) 2006-06-06

Similar Documents

Publication Publication Date Title
JP4239352B2 (ja) 電子装置の製造方法
CN106471524B (zh) 载带及其制造方法以及rfid标签的制造方法
CN101467163B (zh) 传输带的处理过程
US7551141B1 (en) RFID strap capacitively coupled and method of making same
TWI337423B (en) Method for manufacturing a chip card antenna on a thermoplastic support and chip card obtained by said method
KR101539125B1 (ko) 인쇄 집적 회로소자를 포함하는 무선 장치 및 이의 제조 및 사용 방법
EP3089079B1 (en) Carrier tape, method for manufacturing same, and method for manufacturing rfid tag
EP1350233A1 (en) Process for the manufacture of novel, inexpensive radio frequency identification devices
KR20070100248A (ko) 기능성 소자를 포함하는 조립체 및 그 제조 방법
CN101819648A (zh) 非接触ic标签及其制造方法和制造装置
CN101558417A (zh) 具有防粘衬里窗口的rfid标签及制造方法
JP2004516538A (ja) スマートラベルウェブおよびその製造方法
JPH08230368A (ja) データキャリヤ、半仕上げ製品、及びデータキャリヤ製造方法
KR20140123562A (ko) Rfid 안테나 모듈 및 방법
US7421775B2 (en) Method of manufacturing antenna for RFID tag
US6635968B2 (en) Semiconductor device having improved alignment of an electrode terminal on a semiconductor chip and a conductor coupled to the electrode terminal
JP5904316B1 (ja) キャリアテープ及びその製造方法、並びにrfidタグの製造方法
TWI609329B (zh) 無線射頻識別裝置及其製造方法
CN103026371B (zh) 芯片电子器件和通过卷绕进行制造的方法
JP2020074054A (ja) Rfidタグの製造方法、rfidタグの製造装置、及び転写シートの製造方法
US20110242779A1 (en) method for making contactless portable devices with dielectric bridge and portable devices
JP5376321B2 (ja) Icタグおよびicタグの製造方法
EP1966743B1 (en) A method of producing a transponder and a transponder
JPH1134557A (ja) Icモジュールの製造方法、およびその製造方法に用いられるicモジュール集合体の製造装置
JP4693295B2 (ja) 回路の形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050712

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050712

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060417

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071002

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071203

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081009

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20081114

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081202

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081215

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120109

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120109

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees