JP4239015B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 79
- 239000004065 semiconductor Substances 0.000 title claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 288
- 239000002184 metal Substances 0.000 claims description 285
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 198
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 196
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 149
- 229910052710 silicon Inorganic materials 0.000 claims description 149
- 239000010703 silicon Substances 0.000 claims description 148
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 139
- 239000000758 substrate Substances 0.000 claims description 98
- 238000010438 heat treatment Methods 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 63
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 42
- 239000001301 oxygen Substances 0.000 claims description 42
- 229910052760 oxygen Inorganic materials 0.000 claims description 42
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 33
- 229910052746 lanthanum Inorganic materials 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 26
- 229910052735 hafnium Inorganic materials 0.000 claims description 23
- 239000012298 atmosphere Substances 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims description 16
- 150000004706 metal oxides Chemical group 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 10
- 238000005121 nitriding Methods 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 9
- 238000011282 treatment Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- 229910052771 Terbium Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 406
- 239000010409 thin film Substances 0.000 description 65
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 24
- 238000005755 formation reaction Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 21
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 13
- 230000007547 defect Effects 0.000 description 9
- 229910052914 metal silicate Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010406 interfacial reaction Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- -1 ammonia (NH 3 ) Chemical compound 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
Description
図8A乃至図8Dは、本発明に係る第1の実施例における半導体装置に含まれるランタンシリケート高誘電率薄膜の製造工程を示す縦断面図である。図9は、図8A乃至図8Dに示すランタンシリケート高誘電率薄膜の製造に用いた真空蒸着装置の構成の概要を示す図である。図10は、図8Dに示すランタンシリケート高誘電率薄膜の容量−電圧特性と電流−電圧特性から求めた酸化膜換算膜厚とリーク電流の関係を示す図である。
図11A乃至図11Dは、本発明に係る第2の実施例の半導体装置に含まれるハフニウムシリケート高誘電率薄膜の製造工程を示す縦断面図である。図12は、図11A乃至図11Dに示すハフニウムシリケート高誘電率薄膜の製造工程に用いたスパッタ成膜装置の構成の概要を示す図である。
Claims (30)
- 導電領域をシリコン領域から電気的に絶縁するゲート絶縁膜を含む半導体装置の製造方法であって、前記シリコン領域上に下地シリコン酸化膜を形成する工程と、前記下地シリコン酸化膜上に金属層を形成する工程と、還元性雰囲気中で熱処理を施し、前記金属層に含まれる少なくとも一種類の金属元素を含むシリコン酸化物を有するシリケート領域を具有するゲート絶縁膜を形成する工程とを少なくとも含む半導体装置の製造方法。
- 前記ゲート絶縁膜を形成する工程において、前記熱処理を還元性雰囲気中で施すことにより、前記下地シリコン酸化膜と前記金属層との界面でのシリケート反応を引起し、前記金属層に含まれる前記金属元素を前記下地シリコン酸化膜中へ熱拡散させることで、前記下地シリコン酸化膜の少なくとも一部の領域に前記金属元素を熱拡散させることを特徴とする請求項1記載の半導体装置製造方法。
- 前記シリケート反応を引起こす前記熱処理を、水素及びアンモニアのいずれかを含む雰囲気中で行う請求項2記載の半導体装置の製造方法。
- 前記ゲート絶縁膜は、前記熱拡散により、前記金属元素が拡散されないシリコン酸化物を有する少なくとも1つのシリコン酸化物領域と、前記金属元素の濃度が高い少なくとも1つの金属リッチ領域と、前記シリコン酸化物領域と前記金属リッチ領域との間に位置し且つ前記金属リッチ領域より前記金属元素濃度が低い前記シリケート領域とを含む前記ゲート絶縁膜を形成する請求項2記載の半導体装置の製造方法。
- 前記シリケート領域は、前記金属元素の組成が、前記金属リッチ領域に近づくにつれ増加し且つ前記シリコン酸化物領域に近づくにつれ減少し、一方、シリコンの組成が、前記金属リッチ領域に近づくにつれ減少し且つ前記シリコン酸化物領域に近づくにつれ増加する組成変調を有する請求項4記載の半導体装置の製造方法。
- 前記金属リッチ領域は、シリコンを含まない金属酸化物を有する請求項4記載の半導体装置の製造方法。
- 前記金属リッチ領域は、前記シリケート領域より前記金属元素の濃度分布が高い金属リッチシリケートを有する請求項4記載の半導体装置の製造方法。
- 前記金属層を形成する工程は、処理雰囲気中の残留酸素分圧を1×10−6Torr以下に設定して行われる堆積工程を有する請求項1記載の半導体装置の製造方法。
- 前記金属層の堆積工程は、前記シリコン領域を室温より昇温して行う請求項1記載の半導体装置の製造方法。
- 前記熱処理工程の後にさらに窒化処理工程を行う請求項2記載の半導体装置の製造方法。
- 前記窒化処理工程は、アンモニア中での熱処理からなる請求項10記載の半導体装置の製造方法。
- 前記窒化処理工程は、窒素プラズマ処理からなる請求項10記載の半導体装置の製造方法。
- 前記金属元素は、Zr、Hf、Ta、Al、Ti、Nb、Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luの少なくともいずれか1つである請求項1記載の半導体装置の製造方法。
- 前記金属元素にAlのみであり、前記下地シリコン酸化膜は0.6nm以上の膜厚で形成される請求項1記載の半導体装置の製造方法。
- 前記金属元素は、Zr、Hf、Ta、Al、Ti、Nb、Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luの少なくともいずれか1つを含み、前記下地シリコン酸化膜は1nm以上の膜厚で形成される請求項1記載の半導体装置の製造方法。
- 前記金属層の形成工程は、金属堆積膜厚が1nm以下の条件で行われる工程である請求項1記載の半導体装置の製造方法。
- 前記金属層の形成工程は、金属堆積膜厚が0.6nm以下の条件で行われる工程である請求項1記載の半導体装置の製造方法。
- 前記金属層と前記下地シリコン酸化膜との界面での前記シリケート反応が前記金属層の上部まで進行するよう前記熱処理工程を行うことで、前記ゲート絶縁膜の最上部までシリケートで構成する請求項2記載の半導体装置の製造方法。
- 前記熱処理工程により前記金属層に未反応金属領域が残存した場合、前記熱処理工程の後、該未反応金属領域を除去する工程を更に含む請求項2記載の半導体装置の製造方法。
- 前記反応金属領域を除去する工程は、フッ酸溶液またはアンモニア過酸化水素水溶液を使用して行う請求項19記載の半導体装置の製造方法。
- 前記反応金属領域を除去する工程の後、膜質を改質するための熱処理工程を更に含む請求項19記載の半導体装置の製造方法。
- 導電領域をシリコン領域から電気的に絶縁するゲート絶縁膜を含む半導体装置の製造方法であって、前記シリコン領域上に下地シリコン酸化膜を形成する工程と、前記下地シリコン酸化膜上に金属層を形成する工程と、熱処理を施すことで前記下地シリコン酸化膜と前記金属層との界面でのシリケート反応を引起し,前記金属層に含まれる少なくとも一種類の前記金属元素を前記下地シリコン酸化膜中へ熱拡散させることで、前記下地シリコン酸化膜の少なくとも一部の領域に熱拡散された前記金属元素を含むシリコン酸化物を有するシリケート領域を含むゲート絶縁膜を形成する工程を含み、前記金属層の形成工程の後、且つ前記熱処理工程の前に、前記金属層上にシリコン含有絶縁膜を有するキャップ層を堆積する工程を更に含むことで、前記熱処理工程において、前記シリケート反応により、前記金属元素を前記下地シリコン酸化膜中及び前記キャップ層中へ熱拡散させることで、前記下地シリコン酸化膜の少なくとも一部の領域に熱拡散された前記金属元素を含む酸化膜を有する第一のシリケート層を形成すると共に、前記キャップ層の少なくとも一部の領域に少なくとも一種類の熱拡散された前記金属元素を含むシリコン絶縁膜を有する第二のシリケート層を形成する半導体装置の製造方法。
- 前記キャップ層は、シリコン酸化膜、シリコン酸窒化膜、シリコン窒化膜、及びこれらのうち少なくとも2つの積層構造体のいずれか1つを有する請求項22記載の半導体装置の製造方法。
- 前記キャップ層の膜厚が1nm以下である請求項22記載の半導体装置の製造方法。
- 前記キャップ層の膜厚が0.5nm以下である請求項22記載の半導体装置の製造方法。
- 前記ゲート絶縁膜は、膜の厚さ方向でのシリコンの組成が、前記シリコン領域近傍の最下部及び最上部で高く、中央部で低い組成変調を有する請求項22記載の半導体装置の製造方法。
- 前記ゲート絶縁膜は、膜の厚さ方向での少なくとも一種類の前記金属元素の組成が、前記シリコン領域近傍の最下部及び最上部で低く、中央部で高い組成変調を有する請求項22記載の半導体装置の製造方法。
- 前記ゲート絶縁膜の酸化膜換算膜厚が,前記下地シリコン酸化膜の膜厚より小さい請求項1記載の半導体装置の製造方法。
- 前記下地シリコン酸化膜は、窒素を導入したシリコン酸窒化膜を有する請求項1記載の半導体装置の製造方法。
- 前記シリコン領域はシリコン基板からなり、前記導電領域はゲート電極を有する請求項1記載の半導体装置の製造方法。
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CN100565916C (zh) | 2009-12-02 |
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