JP4159712B2 - 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末 - Google Patents

半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末 Download PDF

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JP4159712B2
JP4159712B2 JP32748299A JP32748299A JP4159712B2 JP 4159712 B2 JP4159712 B2 JP 4159712B2 JP 32748299 A JP32748299 A JP 32748299A JP 32748299 A JP32748299 A JP 32748299A JP 4159712 B2 JP4159712 B2 JP 4159712B2
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impurity regions
gate electrode
film
gate
region
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JP2001094113A5 (enExample
JP2001094113A (ja
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舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP32748299A 1998-11-17 1999-11-17 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末 Expired - Fee Related JP4159712B2 (ja)

Priority Applications (1)

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JP32748299A JP4159712B2 (ja) 1998-11-17 1999-11-17 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP10-327180 1998-11-17
JP32718098 1998-11-17
JP10-373222 1998-12-28
JP37322298 1998-12-28
JP11-206958 1999-07-22
JP20695899 1999-07-22
JP32748299A JP4159712B2 (ja) 1998-11-17 1999-11-17 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末

Related Child Applications (3)

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JP2004130621A Division JP4160013B2 (ja) 1998-11-17 2004-04-27 半導体装置
JP2004233911A Division JP4160029B2 (ja) 1998-11-17 2004-08-10 半導体装置
JP2007012892A Division JP4160094B2 (ja) 1998-11-17 2007-01-23 半導体装置及びその作製方法

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JP2001094113A JP2001094113A (ja) 2001-04-06
JP2001094113A5 JP2001094113A5 (enExample) 2005-06-02
JP4159712B2 true JP4159712B2 (ja) 2008-10-01

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JP32748299A Expired - Fee Related JP4159712B2 (ja) 1998-11-17 1999-11-17 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末

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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2256808A2 (en) 1999-04-30 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method therof
US6872604B2 (en) 2000-06-05 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a light emitting device
US7223643B2 (en) 2000-08-11 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP5046452B2 (ja) 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4954366B2 (ja) 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002322173A (ja) * 2001-04-27 2002-11-08 Nippon Hoso Kyokai <Nhk> 有機化合物、半導体装置、有機ｅｌ素子並びに表示装置
JP5072147B2 (ja) * 2001-05-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003086356A (ja) * 2001-09-06 2003-03-20 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
JP5177923B2 (ja) * 2001-06-29 2013-04-10 株式会社半導体エネルギー研究所 半導体装置および電子機器
US6872658B2 (en) 2001-11-30 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device by exposing resist mask
JP2007049181A (ja) * 2002-01-17 2007-02-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7615473B2 (en) 2002-01-17 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method of introducing ion and method of manufacturing semiconductor device
JP4255844B2 (ja) 2003-02-24 2009-04-15 ソニー株式会社 有機発光表示装置およびその製造方法
JP4713200B2 (ja) * 2004-04-08 2011-06-29 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7579220B2 (en) 2005-05-20 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method
US7588970B2 (en) 2005-06-10 2009-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101200444B1 (ko) 2005-07-14 2012-11-12 삼성디스플레이 주식회사 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치
US8035103B2 (en) 2005-08-11 2011-10-11 Sharp Kabushiki Kaisha Circuit board, electronic device, and method for producing circuit board
JP4680850B2 (ja) 2005-11-16 2011-05-11 三星モバイルディスプレイ株式會社 薄膜トランジスタ及びその製造方法
KR101255707B1 (ko) * 2006-08-29 2013-04-17 엘지디스플레이 주식회사 박막 트랜지스터 소자 및 그 제조방법
WO2010032611A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5504221B2 (ja) * 2011-08-05 2014-05-28 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP5634536B2 (ja) * 2013-01-29 2014-12-03 株式会社半導体エネルギー研究所 発光装置
KR102187047B1 (ko) 2013-07-10 2020-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 구동 회로, 및 표시 장치
JP5728599B2 (ja) * 2014-03-14 2015-06-03 株式会社半導体エネルギー研究所 発光装置
JP6034897B2 (ja) * 2015-02-27 2016-11-30 株式会社半導体エネルギー研究所 発光装置

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