JP4154731B2 - 発光素子の製造方法及び発光素子 - Google Patents

発光素子の製造方法及び発光素子 Download PDF

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Publication number
JP4154731B2
JP4154731B2 JP2004131807A JP2004131807A JP4154731B2 JP 4154731 B2 JP4154731 B2 JP 4154731B2 JP 2004131807 A JP2004131807 A JP 2004131807A JP 2004131807 A JP2004131807 A JP 2004131807A JP 4154731 B2 JP4154731 B2 JP 4154731B2
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JP
Japan
Prior art keywords
mass
layer
light
etching
gap
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Expired - Fee Related
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JP2004131807A
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English (en)
Japanese (ja)
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JP2005317664A5 (enExample
JP2005317664A (ja
Inventor
均 池田
金吾 鈴木
秋夫 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2004131807A priority Critical patent/JP4154731B2/ja
Priority to US11/587,632 priority patent/US7663151B2/en
Priority to PCT/JP2005/007177 priority patent/WO2005106976A1/ja
Priority to CNB2005800133820A priority patent/CN100481541C/zh
Priority to TW094112363A priority patent/TW200605397A/zh
Publication of JP2005317664A publication Critical patent/JP2005317664A/ja
Publication of JP2005317664A5 publication Critical patent/JP2005317664A5/ja
Application granted granted Critical
Publication of JP4154731B2 publication Critical patent/JP4154731B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

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  • Led Devices (AREA)
  • Weting (AREA)
JP2004131807A 2004-04-27 2004-04-27 発光素子の製造方法及び発光素子 Expired - Fee Related JP4154731B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004131807A JP4154731B2 (ja) 2004-04-27 2004-04-27 発光素子の製造方法及び発光素子
US11/587,632 US7663151B2 (en) 2004-04-27 2005-04-13 Method of fabricating light emitting device and thus-fabricated light emitting device
PCT/JP2005/007177 WO2005106976A1 (ja) 2004-04-27 2005-04-13 発光素子の製造方法及び発光素子
CNB2005800133820A CN100481541C (zh) 2004-04-27 2005-04-13 发光元件的制造方法及发光元件
TW094112363A TW200605397A (en) 2004-04-27 2005-04-19 Light emitting element and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004131807A JP4154731B2 (ja) 2004-04-27 2004-04-27 発光素子の製造方法及び発光素子

Publications (3)

Publication Number Publication Date
JP2005317664A JP2005317664A (ja) 2005-11-10
JP2005317664A5 JP2005317664A5 (enExample) 2006-10-12
JP4154731B2 true JP4154731B2 (ja) 2008-09-24

Family

ID=35241948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004131807A Expired - Fee Related JP4154731B2 (ja) 2004-04-27 2004-04-27 発光素子の製造方法及び発光素子

Country Status (5)

Country Link
US (1) US7663151B2 (enExample)
JP (1) JP4154731B2 (enExample)
CN (1) CN100481541C (enExample)
TW (1) TW200605397A (enExample)
WO (1) WO2005106976A1 (enExample)

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US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
KR100802451B1 (ko) * 2004-03-05 2008-02-13 쇼와 덴코 가부시키가이샤 인화 붕소계 반도체 발광 소자
JP4092658B2 (ja) * 2004-04-27 2008-05-28 信越半導体株式会社 発光素子の製造方法
US20080121918A1 (en) * 2006-11-15 2008-05-29 The Regents Of The University Of California High light extraction efficiency sphere led
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
JP4692072B2 (ja) * 2005-05-19 2011-06-01 三菱化学株式会社 発光ダイオードの製造方法
JP4584785B2 (ja) * 2005-06-30 2010-11-24 シャープ株式会社 半導体発光素子の製造方法
KR101154744B1 (ko) * 2005-08-01 2012-06-08 엘지이노텍 주식회사 질화물 발광 소자 및 그 제조 방법
WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
WO2007094476A1 (en) * 2006-02-14 2007-08-23 Showa Denko K.K. Light-emitting diode
US20100259184A1 (en) * 2006-02-24 2010-10-14 Ryou Kato Light-emitting device
JP4743661B2 (ja) 2006-03-07 2011-08-10 信越半導体株式会社 発光素子の製造方法及び発光素子
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
JP4962840B2 (ja) * 2006-06-05 2012-06-27 信越半導体株式会社 発光素子及びその製造方法
JP2008103534A (ja) * 2006-10-19 2008-05-01 Hitachi Cable Ltd 半導体発光素子
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5346443B2 (ja) 2007-04-16 2013-11-20 ローム株式会社 半導体発光素子およびその製造方法
TWI344707B (en) * 2007-04-20 2011-07-01 Huga Optotech Inc Semiconductor light-emitting device with high light extraction efficiency
KR101499952B1 (ko) * 2008-02-20 2015-03-06 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5245529B2 (ja) * 2008-05-15 2013-07-24 日立電線株式会社 半導体発光素子及び半導体発光素子の製造方法
JP5497520B2 (ja) * 2010-04-14 2014-05-21 株式会社小糸製作所 発光モジュールおよび光波長変換部材
KR101092086B1 (ko) * 2010-05-07 2011-12-12 희성전자 주식회사 발광다이오드 패키지
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
JP5087672B2 (ja) * 2010-12-13 2012-12-05 株式会社東芝 半導体発光素子
JP5095840B2 (ja) * 2011-04-26 2012-12-12 株式会社東芝 半導体発光素子
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP5292456B2 (ja) * 2011-12-28 2013-09-18 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体素子およびその製造方法
US20130234166A1 (en) * 2012-03-08 2013-09-12 Ting-Chia Ko Method of making a light-emitting device and the light-emitting device
US20150021622A1 (en) * 2012-03-09 2015-01-22 Panasonic Corporation Light-emitting element and method for manufacturing same
JP2014120695A (ja) * 2012-12-19 2014-06-30 Rohm Co Ltd 半導体発光素子
CN105144345B (zh) 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触
CN105742174A (zh) * 2014-12-11 2016-07-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种AlGaInP基多层结构的深槽刻蚀方法
JP6903210B2 (ja) * 2019-10-15 2021-07-14 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及びその製造方法

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JPS60145989A (ja) * 1984-01-10 1985-08-01 Mitsubishi Monsanto Chem Co 種結晶
US5073402A (en) * 1989-03-16 1991-12-17 Medical Laser Technologies Limited Of Research Park Method of making an optical device
US5182233A (en) * 1989-08-02 1993-01-26 Kabushiki Kaisha Toshiba Compound semiconductor pellet, and method for dicing compound semiconductor wafer
JPH05190896A (ja) 1992-01-17 1993-07-30 Rohm Co Ltd Ｌｅｄアレイ及びその製造方法
JP3230638B2 (ja) * 1993-02-10 2001-11-19 シャープ株式会社 発光ダイオードの製造方法
JPH08115893A (ja) 1994-10-18 1996-05-07 Toshiba Corp 半導体素子の製造方法
JP3643665B2 (ja) * 1996-12-20 2005-04-27 シャープ株式会社 半導体発光素子
JP3629694B2 (ja) * 1998-02-19 2005-03-16 信越半導体株式会社 シリコンウェーハの評価方法
JP3531722B2 (ja) * 1998-12-28 2004-05-31 信越半導体株式会社 発光ダイオードの製造方法
JP3881472B2 (ja) * 1999-04-15 2007-02-14 ローム株式会社 半導体発光素子の製法
JP3290640B2 (ja) 2000-01-13 2002-06-10 國聯光電科技股▲ふん▼有限公司 エンハンスされた外部量子効率を有する半導体発光素子の製造方法および半導体化合物の粗面化方法
JP2002359399A (ja) * 2001-05-31 2002-12-13 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
JP2003008058A (ja) 2001-06-18 2003-01-10 Showa Denko Kk ＡｌＧａＩｎＰエピタキシャルウエーハ及びそれを製造する方法並びにそれを用いた半導体発光素子
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
JP2003078162A (ja) * 2001-08-31 2003-03-14 Shin Etsu Handotai Co Ltd ＧａＰ系半導体発光素子
JP3802424B2 (ja) * 2002-01-15 2006-07-26 株式会社東芝 半導体発光素子及びその製造方法
JP3782357B2 (ja) * 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
JP3715627B2 (ja) * 2002-01-29 2005-11-09 株式会社東芝 半導体発光素子及びその製造方法
US7128943B1 (en) * 2002-02-20 2006-10-31 University Of South Florida Methods for fabricating lenses at the end of optical fibers in the far field of the fiber aperture
JP3705791B2 (ja) * 2002-03-14 2005-10-12 株式会社東芝 半導体発光素子および半導体発光装置

Also Published As

Publication number Publication date
TW200605397A (en) 2006-02-01
TWI362761B (enExample) 2012-04-21
US7663151B2 (en) 2010-02-16
JP2005317664A (ja) 2005-11-10
CN1947269A (zh) 2007-04-11
WO2005106976A1 (ja) 2005-11-10
US20070224714A1 (en) 2007-09-27
CN100481541C (zh) 2009-04-22

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