TW200605397A - Light emitting element and method of manufacturing the same - Google Patents

Light emitting element and method of manufacturing the same

Info

Publication number
TW200605397A
TW200605397A TW094112363A TW94112363A TW200605397A TW 200605397 A TW200605397 A TW 200605397A TW 094112363 A TW094112363 A TW 094112363A TW 94112363 A TW94112363 A TW 94112363A TW 200605397 A TW200605397 A TW 200605397A
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting element
layer
transparent semiconductor
manufacturing
Prior art date
Application number
TW094112363A
Other languages
English (en)
Other versions
TWI362761B (zh
Inventor
Hitoshi Ikeda
Kingo Suzuki
Akio Nakamura
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200605397A publication Critical patent/TW200605397A/zh
Application granted granted Critical
Publication of TWI362761B publication Critical patent/TWI362761B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
TW094112363A 2004-04-27 2005-04-19 Light emitting element and method of manufacturing the same TW200605397A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004131807A JP4154731B2 (ja) 2004-04-27 2004-04-27 発光素子の製造方法及び発光素子

Publications (2)

Publication Number Publication Date
TW200605397A true TW200605397A (en) 2006-02-01
TWI362761B TWI362761B (zh) 2012-04-21

Family

ID=35241948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112363A TW200605397A (en) 2004-04-27 2005-04-19 Light emitting element and method of manufacturing the same

Country Status (5)

Country Link
US (1) US7663151B2 (zh)
JP (1) JP4154731B2 (zh)
CN (1) CN100481541C (zh)
TW (1) TW200605397A (zh)
WO (1) WO2005106976A1 (zh)

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JP4092658B2 (ja) * 2004-04-27 2008-05-28 信越半導体株式会社 発光素子の製造方法
JP4692072B2 (ja) * 2005-05-19 2011-06-01 三菱化学株式会社 発光ダイオードの製造方法
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
JP4584785B2 (ja) * 2005-06-30 2010-11-24 シャープ株式会社 半導体発光素子の製造方法
KR101154744B1 (ko) * 2005-08-01 2012-06-08 엘지이노텍 주식회사 질화물 발광 소자 및 그 제조 방법
JP5281408B2 (ja) 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド ドープされた窒化アルミニウム結晶及びそれを製造する方法
WO2007094476A1 (en) * 2006-02-14 2007-08-23 Showa Denko K.K. Light-emitting diode
US20100259184A1 (en) * 2006-02-24 2010-10-14 Ryou Kato Light-emitting device
JP4743661B2 (ja) * 2006-03-07 2011-08-10 信越半導体株式会社 発光素子の製造方法及び発光素子
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
JP4962840B2 (ja) * 2006-06-05 2012-06-27 信越半導体株式会社 発光素子及びその製造方法
JP2008103534A (ja) * 2006-10-19 2008-05-01 Hitachi Cable Ltd 半導体発光素子
TW200837997A (en) * 2006-11-15 2008-09-16 Univ California High light extraction efficiency sphere LED
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5346443B2 (ja) 2007-04-16 2013-11-20 ローム株式会社 半導体発光素子およびその製造方法
TWI344707B (en) * 2007-04-20 2011-07-01 Huga Optotech Inc Semiconductor light-emitting device with high light extraction efficiency
KR101499952B1 (ko) * 2008-02-20 2015-03-06 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5245529B2 (ja) * 2008-05-15 2013-07-24 日立電線株式会社 半導体発光素子及び半導体発光素子の製造方法
JP5497520B2 (ja) * 2010-04-14 2014-05-21 株式会社小糸製作所 発光モジュールおよび光波長変換部材
KR101092086B1 (ko) * 2010-05-07 2011-12-12 희성전자 주식회사 발광다이오드 패키지
JP5806734B2 (ja) 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
JP5087672B2 (ja) * 2010-12-13 2012-12-05 株式会社東芝 半導体発光素子
JP5095840B2 (ja) * 2011-04-26 2012-12-12 株式会社東芝 半導体発光素子
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP5292456B2 (ja) * 2011-12-28 2013-09-18 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体素子およびその製造方法
US20130234166A1 (en) * 2012-03-08 2013-09-12 Ting-Chia Ko Method of making a light-emitting device and the light-emitting device
US20150021622A1 (en) * 2012-03-09 2015-01-22 Panasonic Corporation Light-emitting element and method for manufacturing same
JP2014120695A (ja) * 2012-12-19 2014-06-30 Rohm Co Ltd 半導体発光素子
US20150280057A1 (en) 2013-03-15 2015-10-01 James R. Grandusky Methods of forming planar contacts to pseudomorphic electronic and optoelectronic devices
CN105742174A (zh) * 2014-12-11 2016-07-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种AlGaInP基多层结构的深槽刻蚀方法
JP6903210B2 (ja) * 2019-10-15 2021-07-14 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及びその製造方法

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JP3531722B2 (ja) * 1998-12-28 2004-05-31 信越半導体株式会社 発光ダイオードの製造方法
JP3881472B2 (ja) * 1999-04-15 2007-02-14 ローム株式会社 半導体発光素子の製法
JP3290640B2 (ja) * 2000-01-13 2002-06-10 國聯光電科技股▲ふん▼有限公司 エンハンスされた外部量子効率を有する半導体発光素子の製造方法および半導体化合物の粗面化方法
JP2002359399A (ja) * 2001-05-31 2002-12-13 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
JP2003008058A (ja) * 2001-06-18 2003-01-10 Showa Denko Kk ＡｌＧａＩｎＰエピタキシャルウエーハ及びそれを製造する方法並びにそれを用いた半導体発光素子
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
JP2003078162A (ja) * 2001-08-31 2003-03-14 Shin Etsu Handotai Co Ltd ＧａＰ系半導体発光素子
JP3802424B2 (ja) * 2002-01-15 2006-07-26 株式会社東芝 半導体発光素子及びその製造方法
JP3782357B2 (ja) 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
JP3715627B2 (ja) * 2002-01-29 2005-11-09 株式会社東芝 半導体発光素子及びその製造方法
US7128943B1 (en) * 2002-02-20 2006-10-31 University Of South Florida Methods for fabricating lenses at the end of optical fibers in the far field of the fiber aperture
JP3705791B2 (ja) 2002-03-14 2005-10-12 株式会社東芝 半導体発光素子および半導体発光装置

Also Published As

Publication number Publication date
US20070224714A1 (en) 2007-09-27
WO2005106976A1 (ja) 2005-11-10
TWI362761B (zh) 2012-04-21
JP2005317664A (ja) 2005-11-10
JP4154731B2 (ja) 2008-09-24
CN1947269A (zh) 2007-04-11
CN100481541C (zh) 2009-04-22
US7663151B2 (en) 2010-02-16

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