CN100481541C - 发光元件的制造方法及发光元件 - Google Patents

发光元件的制造方法及发光元件 Download PDF

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Publication number
CN100481541C
CN100481541C CNB2005800133820A CN200580013382A CN100481541C CN 100481541 C CN100481541 C CN 100481541C CN B2005800133820 A CNB2005800133820 A CN B2005800133820A CN 200580013382 A CN200580013382 A CN 200580013382A CN 100481541 C CN100481541 C CN 100481541C
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China
Prior art keywords
light
gap
emitting component
layer
transparent semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2005800133820A
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English (en)
Chinese (zh)
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CN1947269A (zh
Inventor
池田均
铃木金吾
中村秋夫
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Publication of CN1947269A publication Critical patent/CN1947269A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

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  • Weting (AREA)
CNB2005800133820A 2004-04-27 2005-04-13 发光元件的制造方法及发光元件 Expired - Fee Related CN100481541C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP131807/2004 2004-04-27
JP2004131807A JP4154731B2 (ja) 2004-04-27 2004-04-27 発光素子の製造方法及び発光素子

Publications (2)

Publication Number Publication Date
CN1947269A CN1947269A (zh) 2007-04-11
CN100481541C true CN100481541C (zh) 2009-04-22

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Family Applications (1)

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CNB2005800133820A Expired - Fee Related CN100481541C (zh) 2004-04-27 2005-04-13 发光元件的制造方法及发光元件

Country Status (5)

Country Link
US (1) US7663151B2 (enExample)
JP (1) JP4154731B2 (enExample)
CN (1) CN100481541C (enExample)
TW (1) TW200605397A (enExample)
WO (1) WO2005106976A1 (enExample)

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CN102569578A (zh) * 2010-12-13 2012-07-11 株式会社东芝 半导体发光元件

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KR100802451B1 (ko) * 2004-03-05 2008-02-13 쇼와 덴코 가부시키가이샤 인화 붕소계 반도체 발광 소자
JP4092658B2 (ja) * 2004-04-27 2008-05-28 信越半導体株式会社 発光素子の製造方法
US20080121918A1 (en) * 2006-11-15 2008-05-29 The Regents Of The University Of California High light extraction efficiency sphere led
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
JP4692072B2 (ja) * 2005-05-19 2011-06-01 三菱化学株式会社 発光ダイオードの製造方法
JP4584785B2 (ja) * 2005-06-30 2010-11-24 シャープ株式会社 半導体発光素子の製造方法
KR101154744B1 (ko) * 2005-08-01 2012-06-08 엘지이노텍 주식회사 질화물 발광 소자 및 그 제조 방법
WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
WO2007094476A1 (en) * 2006-02-14 2007-08-23 Showa Denko K.K. Light-emitting diode
US20100259184A1 (en) * 2006-02-24 2010-10-14 Ryou Kato Light-emitting device
JP4743661B2 (ja) 2006-03-07 2011-08-10 信越半導体株式会社 発光素子の製造方法及び発光素子
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
JP4962840B2 (ja) * 2006-06-05 2012-06-27 信越半導体株式会社 発光素子及びその製造方法
JP2008103534A (ja) * 2006-10-19 2008-05-01 Hitachi Cable Ltd 半導体発光素子
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5346443B2 (ja) 2007-04-16 2013-11-20 ローム株式会社 半導体発光素子およびその製造方法
TWI344707B (en) * 2007-04-20 2011-07-01 Huga Optotech Inc Semiconductor light-emitting device with high light extraction efficiency
KR101499952B1 (ko) * 2008-02-20 2015-03-06 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5245529B2 (ja) * 2008-05-15 2013-07-24 日立電線株式会社 半導体発光素子及び半導体発光素子の製造方法
JP5497520B2 (ja) * 2010-04-14 2014-05-21 株式会社小糸製作所 発光モジュールおよび光波長変換部材
KR101092086B1 (ko) * 2010-05-07 2011-12-12 희성전자 주식회사 발광다이오드 패키지
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
JP5095840B2 (ja) * 2011-04-26 2012-12-12 株式会社東芝 半導体発光素子
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP5292456B2 (ja) * 2011-12-28 2013-09-18 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体素子およびその製造方法
US20130234166A1 (en) * 2012-03-08 2013-09-12 Ting-Chia Ko Method of making a light-emitting device and the light-emitting device
US20150021622A1 (en) * 2012-03-09 2015-01-22 Panasonic Corporation Light-emitting element and method for manufacturing same
JP2014120695A (ja) * 2012-12-19 2014-06-30 Rohm Co Ltd 半導体発光素子
CN105144345B (zh) 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触
CN105742174A (zh) * 2014-12-11 2016-07-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种AlGaInP基多层结构的深槽刻蚀方法
JP6903210B2 (ja) * 2019-10-15 2021-07-14 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及びその製造方法

Citations (7)

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US5403916A (en) * 1993-02-10 1995-04-04 Sharp Kabushiki Kaisha Method for producing a light emitting diode having transparent substrate
US6081540A (en) * 1996-12-20 2000-06-27 Sharp Kabushiki Kaisha Semiconductor light emitting device with high light emission efficiency
JP2001196630A (ja) * 2000-01-13 2001-07-19 Kokuren Koden Kagi Kofun Yugenkoshi エンハンスされた外部量子効率を有する半導体発光素子の製造方法
US6395572B1 (en) * 1999-04-15 2002-05-28 Rohm Co, Ltd. Method of producing semiconductor light-emitting element
US20030047745A1 (en) * 2001-08-31 2003-03-13 Shin-Etsu Handotai Co., Ltd. GaP-base semiconductor light emitting device
US20030178626A1 (en) * 2002-01-18 2003-09-25 Hitoshi Sugiyama Semiconductor light-emitting element and method of manufacturing the same
US20030197191A1 (en) * 2002-03-14 2003-10-23 Kabushiki Kaisha Toshiba Semiconductor light emitting element and semiconductor light emitting device

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JP3629694B2 (ja) * 1998-02-19 2005-03-16 信越半導体株式会社 シリコンウェーハの評価方法
JP3531722B2 (ja) * 1998-12-28 2004-05-31 信越半導体株式会社 発光ダイオードの製造方法
JP2002359399A (ja) * 2001-05-31 2002-12-13 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
JP2003008058A (ja) 2001-06-18 2003-01-10 Showa Denko Kk ＡｌＧａＩｎＰエピタキシャルウエーハ及びそれを製造する方法並びにそれを用いた半導体発光素子
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
JP3802424B2 (ja) * 2002-01-15 2006-07-26 株式会社東芝 半導体発光素子及びその製造方法
JP3715627B2 (ja) * 2002-01-29 2005-11-09 株式会社東芝 半導体発光素子及びその製造方法
US7128943B1 (en) * 2002-02-20 2006-10-31 University Of South Florida Methods for fabricating lenses at the end of optical fibers in the far field of the fiber aperture

Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
US5403916A (en) * 1993-02-10 1995-04-04 Sharp Kabushiki Kaisha Method for producing a light emitting diode having transparent substrate
US6081540A (en) * 1996-12-20 2000-06-27 Sharp Kabushiki Kaisha Semiconductor light emitting device with high light emission efficiency
US6395572B1 (en) * 1999-04-15 2002-05-28 Rohm Co, Ltd. Method of producing semiconductor light-emitting element
JP2001196630A (ja) * 2000-01-13 2001-07-19 Kokuren Koden Kagi Kofun Yugenkoshi エンハンスされた外部量子効率を有する半導体発光素子の製造方法
US20030047745A1 (en) * 2001-08-31 2003-03-13 Shin-Etsu Handotai Co., Ltd. GaP-base semiconductor light emitting device
US20030178626A1 (en) * 2002-01-18 2003-09-25 Hitoshi Sugiyama Semiconductor light-emitting element and method of manufacturing the same
US20030197191A1 (en) * 2002-03-14 2003-10-23 Kabushiki Kaisha Toshiba Semiconductor light emitting element and semiconductor light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569578A (zh) * 2010-12-13 2012-07-11 株式会社东芝 半导体发光元件
CN102569578B (zh) * 2010-12-13 2015-11-25 株式会社东芝 半导体发光元件

Also Published As

Publication number Publication date
JP4154731B2 (ja) 2008-09-24
TW200605397A (en) 2006-02-01
TWI362761B (enExample) 2012-04-21
US7663151B2 (en) 2010-02-16
JP2005317664A (ja) 2005-11-10
CN1947269A (zh) 2007-04-11
WO2005106976A1 (ja) 2005-11-10
US20070224714A1 (en) 2007-09-27

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Granted publication date: 20090422