JP4132270B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4132270B2
JP4132270B2 JP23992898A JP23992898A JP4132270B2 JP 4132270 B2 JP4132270 B2 JP 4132270B2 JP 23992898 A JP23992898 A JP 23992898A JP 23992898 A JP23992898 A JP 23992898A JP 4132270 B2 JP4132270 B2 JP 4132270B2
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JP
Japan
Prior art keywords
power supply
wiring
transistor
input
supply wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23992898A
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English (en)
Japanese (ja)
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JP2000012788A5 (https=
JP2000012788A (ja
Inventor
徹 名倉
公大 上田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23992898A priority Critical patent/JP4132270B2/ja
Priority to US09/240,707 priority patent/US6208494B1/en
Priority to KR1019990012874A priority patent/KR100321815B1/ko
Publication of JP2000012788A publication Critical patent/JP2000012788A/ja
Publication of JP2000012788A5 publication Critical patent/JP2000012788A5/ja
Application granted granted Critical
Publication of JP4132270B2 publication Critical patent/JP4132270B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP23992898A 1998-04-20 1998-08-26 半導体集積回路装置 Expired - Fee Related JP4132270B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP23992898A JP4132270B2 (ja) 1998-04-20 1998-08-26 半導体集積回路装置
US09/240,707 US6208494B1 (en) 1998-04-20 1999-02-02 Semiconductor integrated circuit device including electrostatic protection circuit accommodating drive by plurality of power supplies and effectively removing various types of surge
KR1019990012874A KR100321815B1 (ko) 1998-04-20 1999-04-12 정전 보호 회로를 갖는 반도체 집적 회로 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-109547 1998-04-20
JP10954798 1998-04-20
JP23992898A JP4132270B2 (ja) 1998-04-20 1998-08-26 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2000012788A JP2000012788A (ja) 2000-01-14
JP2000012788A5 JP2000012788A5 (https=) 2004-12-24
JP4132270B2 true JP4132270B2 (ja) 2008-08-13

Family

ID=26449284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23992898A Expired - Fee Related JP4132270B2 (ja) 1998-04-20 1998-08-26 半導体集積回路装置

Country Status (3)

Country Link
US (1) US6208494B1 (https=)
JP (1) JP4132270B2 (https=)
KR (1) KR100321815B1 (https=)

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US7042703B2 (en) 2000-03-22 2006-05-09 X2Y Attenuators, Llc Energy conditioning structure
US6606011B2 (en) 1998-04-07 2003-08-12 X2Y Attenuators, Llc Energy conditioning circuit assembly
US7106570B2 (en) 1997-04-08 2006-09-12 Xzy Altenuators, Llc Pathway arrangement
US20030161086A1 (en) 2000-07-18 2003-08-28 X2Y Attenuators, Llc Paired multi-layered dielectric independent passive component architecture resulting in differential and common mode filtering with surge protection in one integrated package
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US6894884B2 (en) 1997-04-08 2005-05-17 Xzy Attenuators, Llc Offset pathway arrangements for energy conditioning
US6018448A (en) * 1997-04-08 2000-01-25 X2Y Attenuators, L.L.C. Paired multi-layered dielectric independent passive component architecture resulting in differential and common mode filtering with surge protection in one integrated package
US7301748B2 (en) 1997-04-08 2007-11-27 Anthony Anthony A Universal energy conditioning interposer with circuit architecture
US7110235B2 (en) 1997-04-08 2006-09-19 Xzy Altenuators, Llc Arrangement for energy conditioning
US6954346B2 (en) 1997-04-08 2005-10-11 Xzy Attenuators, Llc Filter assembly
US7274549B2 (en) 2000-12-15 2007-09-25 X2Y Attenuators, Llc Energy pathway arrangements for energy conditioning
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
WO1999052210A1 (en) 1998-04-07 1999-10-14 X2Y Attenuators, L.L.C. Component carrier
US7336467B2 (en) 2000-10-17 2008-02-26 X2Y Attenuators, Llc Energy pathway arrangement
US6603646B2 (en) 1997-04-08 2003-08-05 X2Y Attenuators, Llc Multi-functional energy conditioner
US6650525B2 (en) 1997-04-08 2003-11-18 X2Y Attenuators, Llc Component carrier
US7427816B2 (en) 1998-04-07 2008-09-23 X2Y Attenuators, Llc Component carrier
US6524897B1 (en) * 2000-03-31 2003-02-25 Intel Corporation Semiconductor-on-insulator resistor-capacitor circuit
US7113383B2 (en) 2000-04-28 2006-09-26 X2Y Attenuators, Llc Predetermined symmetrically balanced amalgam with complementary paired portions comprising shielding electrodes and shielded electrodes and other predetermined element portions for symmetrically balanced and complementary energy portion conditioning
EP1312148A4 (en) 2000-08-15 2009-06-03 X2Y Attenuators Llc ELECTRODE ARRANGEMENT FOR CIRCUIT BREAKER PROCESSING
KR100536511B1 (ko) 2000-10-17 2005-12-14 엑스2와이 어테뉴에이터스, 엘.엘.씨 공통 기준 노드를 갖는 단일 또는 다수의 회로들을 위한 차폐 아말감 및 차폐된 에너지 경로들 및 다른 엘리먼트들
US7193831B2 (en) 2000-10-17 2007-03-20 X2Y Attenuators, Llc Energy pathway arrangement
KR20020085101A (ko) * 2001-05-04 2002-11-16 삼성전자 주식회사 다이오드를 이용한 정전기적 방전으로부터의 보호 회로
JP4790166B2 (ja) * 2001-07-05 2011-10-12 Ｏｋｉセミコンダクタ株式会社 保護トランジスタ
US6667648B2 (en) * 2002-04-23 2003-12-23 International Business Machines Corporation Voltage island communications circuits
US20040100745A1 (en) * 2002-11-21 2004-05-27 Industrial Technology Research Institute Silicon-controlled rectifier with dynamic holding voltage for on-chip electrostatic discharge protection
US7180718B2 (en) * 2003-01-31 2007-02-20 X2Y Attenuators, Llc Shielded energy conditioner
WO2005002018A2 (en) 2003-05-29 2005-01-06 X2Y Attenuators, Llc Connector related structures including an energy
KR20060120683A (ko) 2003-12-22 2006-11-27 엑스2와이 어테뉴에이터스, 엘.엘.씨 내부적으로 차폐된 에너지 컨디셔너
JP2005217043A (ja) * 2004-01-28 2005-08-11 Toshiba Corp 静電破壊保護回路
US7187527B2 (en) * 2004-09-02 2007-03-06 Macronix International Co., Ltd. Electrostatic discharge conduction device and mixed power integrated circuits using same
US7129545B2 (en) * 2005-02-24 2006-10-31 International Business Machines Corporation Charge modulation network for multiple power domains for silicon-on-insulator technology
JP2008537843A (ja) 2005-03-01 2008-09-25 エックストゥーワイ アテニュエイターズ，エルエルシー 内部で重なり合った調整器
WO2006093831A2 (en) 2005-03-01 2006-09-08 X2Y Attenuators, Llc Energy conditioner with tied through electrodes
WO2006099297A2 (en) 2005-03-14 2006-09-21 X2Y Attenuators, Llc Conditioner with coplanar conductors
EP1991996A1 (en) 2006-03-07 2008-11-19 X2Y Attenuators, L.L.C. Energy conditioner structures
US20070246778A1 (en) * 2006-04-21 2007-10-25 Meng-Chi Liou Electrostatic discharge panel protection structure
JP5006580B2 (ja) * 2006-05-31 2012-08-22 ルネサスエレクトロニクス株式会社 保護回路を備える半導体装置
JP4856609B2 (ja) * 2007-10-10 2012-01-18 日本オプネクスト株式会社 通信モジュール
JP5564818B2 (ja) * 2009-03-31 2014-08-06 富士通セミコンダクター株式会社 電源クランプ回路
US8947839B2 (en) * 2009-07-30 2015-02-03 Xilinx, Inc. Enhanced immunity from electrostatic discharge
EP2715382B1 (en) * 2011-05-27 2018-06-27 NXP USA, Inc. Ground loss monitoring circuit and integrated circuit comprising the same
JP5752659B2 (ja) 2012-09-20 2015-07-22 株式会社東芝 半導体回路
US9851392B2 (en) * 2013-01-10 2017-12-26 Nxp Usa, Inc. Ground-loss detection circuit
JP6519972B2 (ja) * 2014-02-07 2019-05-29 株式会社リコー ハイパスフィルタ回路及びバンドパスフィルタ回路
EP2919262B1 (en) * 2014-03-14 2022-12-21 EM Microelectronic-Marin SA Fault detection assembly
JP2016066673A (ja) * 2014-09-24 2016-04-28 株式会社東芝 半導体装置
CN208045498U (zh) 2017-03-29 2018-11-02 意法半导体国际有限公司 用于提供静电放电(esd)保护的电路
US11063429B2 (en) 2018-04-12 2021-07-13 Stmicroelectronics International N.V. Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection
US10944257B2 (en) 2018-04-13 2021-03-09 Stmicroelectronics International N.V. Integrated silicon controlled rectifier (SCR) and a low leakage SCR supply clamp for electrostatic discharge (ESP) protection
JP7408595B2 (ja) * 2021-03-30 2024-01-05 株式会社東芝 保護回路
US20230197709A1 (en) * 2021-12-22 2023-06-22 Intel Corporation Electrostatic discharge (esd) circuit with diodes in metal layers of a substrate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6112043A (ja) 1984-06-27 1986-01-20 Toshiba Corp マスタ−スライス型ゲ−トアレイ装置
JPS61292351A (ja) 1985-06-20 1986-12-23 Sanyo Electric Co Ltd 入力保護回路
JPS6239045A (ja) 1985-08-14 1987-02-20 Oki Electric Ind Co Ltd 半導体集積回路の入力保護回路
JP2659214B2 (ja) 1988-06-10 1997-09-30 日本電気アイシーマイコンシステム株式会社 マスタスライス型半導体集積回路
JPH0286317A (ja) 1988-09-22 1990-03-27 Hitachi Ltd 半導体集積回路装置
JPH05102475A (ja) 1991-10-09 1993-04-23 Ricoh Co Ltd 半導体装置とその製造方法
JPH05291503A (ja) 1992-04-06 1993-11-05 Hitachi Ltd 半導体装置
US5345356A (en) * 1992-06-05 1994-09-06 At&T Bell Laboratories ESD protection of output buffers
JP2809020B2 (ja) 1992-12-07 1998-10-08 日本電気株式会社 入出力保護回路
JPH08213555A (ja) 1995-02-02 1996-08-20 Mitsubishi Electric Corp 半導体集積回路
JPH09162407A (ja) 1995-12-06 1997-06-20 Hitachi Ltd 半導体集積回路装置及びその製造方法

Also Published As

Publication number Publication date
US6208494B1 (en) 2001-03-27
KR100321815B1 (ko) 2002-02-02
KR19990083141A (ko) 1999-11-25
JP2000012788A (ja) 2000-01-14

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