JP4105403B2 - 半導体光集積素子の製造方法 - Google Patents

半導体光集積素子の製造方法 Download PDF

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Publication number
JP4105403B2
JP4105403B2 JP2001129178A JP2001129178A JP4105403B2 JP 4105403 B2 JP4105403 B2 JP 4105403B2 JP 2001129178 A JP2001129178 A JP 2001129178A JP 2001129178 A JP2001129178 A JP 2001129178A JP 4105403 B2 JP4105403 B2 JP 4105403B2
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Prior art keywords
optical
layer
modulator
laser
region
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Expired - Lifetime
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JP2001129178A
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Japanese (ja)
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JP2002324936A5 (enExample
JP2002324936A (ja
Inventor
宏 佐藤
彰 大家
和典 篠田
伸二 辻
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日本オプネクスト株式会社
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Priority to JP2001129178A priority Critical patent/JP4105403B2/ja
Priority to US09/916,286 priority patent/US20020158266A1/en
Publication of JP2002324936A publication Critical patent/JP2002324936A/ja
Priority to US10/614,779 priority patent/US6973226B2/en
Publication of JP2002324936A5 publication Critical patent/JP2002324936A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4256—Details of housings
    • G02B6/4262—Details of housings characterised by the shape of the housing
    • G02B6/4265—Details of housings characterised by the shape of the housing of the Butterfly or dual inline package [DIP] type
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2001129178A 2001-04-26 2001-04-26 半導体光集積素子の製造方法 Expired - Lifetime JP4105403B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001129178A JP4105403B2 (ja) 2001-04-26 2001-04-26 半導体光集積素子の製造方法
US09/916,286 US20020158266A1 (en) 2001-04-26 2001-07-30 Optoelectronic waveguiding device and optical modules
US10/614,779 US6973226B2 (en) 2001-04-26 2003-07-09 Optoelectronic waveguiding device and optical modules

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001129178A JP4105403B2 (ja) 2001-04-26 2001-04-26 半導体光集積素子の製造方法

Publications (3)

Publication Number Publication Date
JP2002324936A JP2002324936A (ja) 2002-11-08
JP2002324936A5 JP2002324936A5 (enExample) 2005-09-15
JP4105403B2 true JP4105403B2 (ja) 2008-06-25

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Family Applications (1)

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JP2001129178A Expired - Lifetime JP4105403B2 (ja) 2001-04-26 2001-04-26 半導体光集積素子の製造方法

Country Status (2)

Country Link
US (2) US20020158266A1 (enExample)
JP (1) JP4105403B2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9372306B1 (en) 2001-10-09 2016-06-21 Infinera Corporation Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)
US10012797B1 (en) 2002-10-08 2018-07-03 Infinera Corporation Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)
JP2005175295A (ja) * 2003-12-12 2005-06-30 Hitachi Ltd 半導体光素子及び光モジュール
CN100384038C (zh) * 2004-09-16 2008-04-23 中国科学院半导体研究所 选择区域外延生长叠层电吸收调制激光器结构的制作方法
KR100620391B1 (ko) 2004-12-14 2006-09-12 한국전자통신연구원 집적형 반도체 광원
GB2430548B (en) * 2005-09-27 2011-08-10 Agilent Technologies Inc An integrated modulator-laser structure and a method of producing same
JP2008053501A (ja) * 2006-08-25 2008-03-06 Opnext Japan Inc 集積光デバイスおよびその製造方法
JP5082414B2 (ja) * 2006-12-06 2012-11-28 株式会社日立製作所 光半導体装置および光導波路装置
JP2008294124A (ja) * 2007-05-23 2008-12-04 Fujitsu Ltd 光半導体素子
US7539228B2 (en) * 2007-06-26 2009-05-26 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same
JP4998238B2 (ja) * 2007-12-07 2012-08-15 三菱電機株式会社 集積型半導体光素子
JP5151532B2 (ja) * 2008-02-15 2013-02-27 住友電気工業株式会社 半導体光集積素子の製造方法
JP5382289B2 (ja) * 2008-03-26 2014-01-08 セイコーエプソン株式会社 発光装置
JP2010140967A (ja) * 2008-12-09 2010-06-24 Hitachi Ltd 光モジュール
US20110134957A1 (en) * 2009-12-07 2011-06-09 Emcore Corporation Low Chirp Coherent Light Source
JP5534826B2 (ja) * 2010-01-19 2014-07-02 日本オクラロ株式会社 半導体光素子、光送信モジュール、光送受信モジュール、光伝送装置、及び、それらの製造方法
JP5691216B2 (ja) 2010-03-29 2015-04-01 富士通株式会社 光半導体集積素子及びその製造方法
JP5800466B2 (ja) * 2010-04-20 2015-10-28 日本電信電話株式会社 多チャネル光送信モジュール
JP2012084627A (ja) * 2010-10-08 2012-04-26 Anritsu Corp 半導体発光素子およびそれを用いた光パルス試験器
EP2442165B1 (en) * 2010-10-15 2015-04-15 Huawei Technologies Co., Ltd. Coupling methods and systems using a taper
JP2012174700A (ja) * 2011-02-17 2012-09-10 Nippon Telegr & Teleph Corp <Ntt> 多チャネル光送信モジュール及びその作製方法
US9097846B2 (en) * 2011-08-30 2015-08-04 Skorpios Technologies, Inc. Integrated waveguide coupler
JP2013165201A (ja) * 2012-02-13 2013-08-22 Hitachi Ltd 半導体光素子、半導体光モジュール、およびその製造方法
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9306672B2 (en) 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
WO2015122367A1 (ja) * 2014-02-13 2015-08-20 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュール
JP6423159B2 (ja) * 2014-02-27 2018-11-14 富士通株式会社 Ｇｅ系半導体装置、その製造方法及び光インターコネクトシステム
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
JP2016092124A (ja) * 2014-10-31 2016-05-23 三菱電機株式会社 光変調器集積半導体レーザ
JP6452451B2 (ja) * 2015-01-06 2019-01-16 古河電気工業株式会社 光集積素子およびその製造方法
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
JP6499268B2 (ja) * 2017-12-26 2019-04-10 日本オクラロ株式会社 半導体光素子及び光通信モジュール
JP7156850B2 (ja) * 2018-08-02 2022-10-19 日本ルメンタム株式会社 半導体光素子及び光送受信モジュール
EP3903390B1 (en) * 2019-05-08 2022-11-30 Huawei Technologies Co., Ltd. Compound optical device
JP7567435B2 (ja) 2020-12-18 2024-10-16 住友電気工業株式会社 半導体光素子およびその製造方法
JP2024506071A (ja) * 2021-02-12 2024-02-08 フェルディナント－ブラウン－インスティツット ゲーゲーエムベーハー， ライプニッツ－インスティツット フュー ヘーヒストフレクエンツテヒニク 拡張キャビティを有するダイオードレーザデバイスおよび製作の方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5816620B2 (ja) * 1977-08-29 1983-04-01 松下電器産業株式会社 光集積回路装置
US4480446A (en) * 1981-07-08 1984-11-06 Margulefsky Allen L Method and apparatus for rehabilitating refrigerant
JPS6215875A (ja) * 1985-07-12 1987-01-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS6371826A (ja) 1986-09-16 1988-04-01 Hitachi Ltd 光半導体装置
JPS63156388A (ja) * 1986-12-19 1988-06-29 Fujitsu Ltd 半導体発光素子の製造方法
DE69331979T2 (de) * 1992-02-28 2003-01-23 Hitachi, Ltd. Optische integrierte Halbleitervorrichtung und Verfahren zur Herstellung und Verwendung in einem Lichtempfänger
KR100357787B1 (ko) * 1994-01-31 2003-01-24 가부시끼가이샤 히다치 세이사꾸쇼 도파로형광소자의제조방법
GB9523731D0 (en) * 1995-11-20 1996-01-24 British Telecomm Optical transmitter
SE507376C2 (sv) * 1996-09-04 1998-05-18 Ericsson Telefon Ab L M Våglängdsavstämbar laseranordning
JPH10163568A (ja) * 1996-12-03 1998-06-19 Mitsubishi Electric Corp 変調器集積半導体レーザ
JPH10270793A (ja) * 1997-03-27 1998-10-09 Fujitsu Ltd 光半導体集積装置
JP2001085781A (ja) * 1999-09-17 2001-03-30 Mitsubishi Electric Corp 変調器集積半導体レーザ及び変調器集積半導体レーザを使用した半導体レーザ装置
JP2001142037A (ja) * 1999-11-17 2001-05-25 Oki Electric Ind Co Ltd 電界効果型光変調器および半導体光素子の製造方法
JP4547765B2 (ja) * 2000-03-30 2010-09-22 三菱電機株式会社 光変調器及び光変調器付半導体レーザ装置、並びに光通信装置
JP2002148575A (ja) * 2000-11-15 2002-05-22 Mitsubishi Electric Corp 光変調器および光変調器集積型レーザーダイオード

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US20050078904A1 (en) 2005-04-14
JP2002324936A (ja) 2002-11-08
US20020158266A1 (en) 2002-10-31
US6973226B2 (en) 2005-12-06

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