JP4071308B2 - 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム - Google Patents

半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム Download PDF

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Publication number
JP4071308B2
JP4071308B2 JP28342296A JP28342296A JP4071308B2 JP 4071308 B2 JP4071308 B2 JP 4071308B2 JP 28342296 A JP28342296 A JP 28342296A JP 28342296 A JP28342296 A JP 28342296A JP 4071308 B2 JP4071308 B2 JP 4071308B2
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Japan
Prior art keywords
layer
light emitting
semiconductor light
emitting device
lattice
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Expired - Fee Related
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JP28342296A
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English (en)
Japanese (ja)
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JPH10126004A (ja
JPH10126004A5 (enExample
Inventor
俊一 佐藤
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Ricoh Co Ltd
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Ricoh Co Ltd
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Priority to JP28342296A priority Critical patent/JP4071308B2/ja
Priority to US08/917,141 priority patent/US6233264B1/en
Publication of JPH10126004A publication Critical patent/JPH10126004A/ja
Priority to US09/688,875 priority patent/US6449299B1/en
Priority to US10/213,072 priority patent/US6879614B2/en
Publication of JPH10126004A5 publication Critical patent/JPH10126004A5/ja
Priority to US11/088,994 priority patent/US20050169334A1/en
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Publication of JP4071308B2 publication Critical patent/JP4071308B2/ja
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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP28342296A 1996-08-27 1996-10-04 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム Expired - Fee Related JP4071308B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP28342296A JP4071308B2 (ja) 1996-08-27 1996-10-04 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム
US08/917,141 US6233264B1 (en) 1996-08-27 1997-08-25 Optical semiconductor device having an active layer containing N
US09/688,875 US6449299B1 (en) 1996-08-27 2000-10-17 Optical semiconductor device having an active layer containing N
US10/213,072 US6879614B2 (en) 1996-08-27 2002-08-07 Optical semiconductor device having an active layer containing N
US11/088,994 US20050169334A1 (en) 1996-08-27 2005-03-24 Optical semiconductor device having an active layer containing N

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-244244 1996-08-27
JP24424496 1996-08-27
JP28342296A JP4071308B2 (ja) 1996-08-27 1996-10-04 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム

Related Child Applications (2)

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JP2006101440A Division JP4088319B2 (ja) 1996-08-27 2006-04-03 半導体発光素子の製造方法
JP2006101379A Division JP4088318B2 (ja) 1996-08-27 2006-04-03 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム

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JPH10126004A JPH10126004A (ja) 1998-05-15
JPH10126004A5 JPH10126004A5 (enExample) 2004-10-14
JP4071308B2 true JP4071308B2 (ja) 2008-04-02

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JP28342296A Expired - Fee Related JP4071308B2 (ja) 1996-08-27 1996-10-04 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム

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Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4088318B2 (ja) * 1996-08-27 2008-05-21 株式会社リコー 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム
JP4088319B2 (ja) * 1996-08-27 2008-05-21 株式会社リコー 半導体発光素子の製造方法
JP4219010B2 (ja) * 1997-06-23 2009-02-04 シャープ株式会社 半導体レーザ装置
US6657233B2 (en) 1998-08-19 2003-12-02 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device
US6207973B1 (en) 1998-08-19 2001-03-27 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures
JP2008098682A (ja) * 1998-11-09 2008-04-24 Ricoh Co Ltd 半導体発光素子
JP2008098680A (ja) * 1998-11-09 2008-04-24 Ricoh Co Ltd 半導体発光素子
JP4084506B2 (ja) * 1998-11-09 2008-04-30 株式会社リコー 半導体発光素子の製造方法
WO2000042685A1 (en) * 1999-01-11 2000-07-20 The Furukawa Electric Co., Ltd. n-TYPE MODULATION DOPE MULTIPLE QUANTUM WELL SEMICONDUCTOR LASER
US6396861B1 (en) 1999-01-11 2002-05-28 The Furukawa Electric Co., Ltd. N-type modulation-doped multi quantum well semiconductor laser device
JP2001044572A (ja) * 1999-08-02 2001-02-16 Canon Inc 窒素を含むｉｉｉ−ｖ族半導体を用いた半導体レーザ
US6472680B1 (en) * 1999-12-31 2002-10-29 Matsushita Electric Industrial Co., Ltd. Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation
JP2001320134A (ja) * 2000-05-01 2001-11-16 Ricoh Co Ltd 半導体発光素子およびその製造方法並びに光送信モジュールおよび光送受信モジュールおよび光通信システムおよびコンピュータシステムおよびネットワークシステム
JP4931304B2 (ja) * 2000-09-21 2012-05-16 株式会社リコー 面発光型半導体レーザ素子の製造方法
US6674785B2 (en) 2000-09-21 2004-01-06 Ricoh Company, Ltd. Vertical-cavity, surface-emission type laser diode and fabrication process thereof
JP2002252426A (ja) * 2001-02-26 2002-09-06 Ricoh Co Ltd 長波長帯面発光レーザ素子を用いた光通信システム
US7590159B2 (en) 2001-02-26 2009-09-15 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
JP2002261388A (ja) * 2001-02-27 2002-09-13 Ricoh Co Ltd 面発光型半導体レーザ素子チップおよび光通信システム
JP2002261400A (ja) * 2001-02-27 2002-09-13 Ricoh Co Ltd レーザ、レーザ装置および光通信システム
JP2002329928A (ja) * 2001-02-27 2002-11-15 Ricoh Co Ltd 光通信システム
JP2002280667A (ja) * 2001-03-15 2002-09-27 Ricoh Co Ltd 半導体レーザおよびその製造方法および面発光型半導体レーザおよびその製造方法
US7968362B2 (en) 2001-03-27 2011-06-28 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US6765232B2 (en) 2001-03-27 2004-07-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US7180100B2 (en) 2001-03-27 2007-02-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
JP4864014B2 (ja) * 2001-03-27 2012-01-25 株式会社リコー 面発光型半導体レーザ素子の製造方法
JP2008034889A (ja) * 2001-07-11 2008-02-14 Ricoh Co Ltd 半導体発光素子
JP5067813B2 (ja) * 2001-09-21 2012-11-07 株式会社リコー 半導体発光素子およびその製造方法および光伝送モジュールおよび光交換装置および光伝送システム
US6927412B2 (en) 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
JP2007250896A (ja) * 2006-03-16 2007-09-27 Sumitomo Electric Ind Ltd 半導体光素子
JP2008166571A (ja) * 2006-12-28 2008-07-17 Mitsubishi Electric Corp 半導体レーザ装置
JP2008022040A (ja) * 2007-10-05 2008-01-31 Ricoh Co Ltd 半導体発光素子および光送信モジュールおよび光送受信モジュールおよび光通信システムおよびコンピュータシステムおよびネットワークシステム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3425185B2 (ja) * 1993-03-26 2003-07-07 日本オプネクスト株式会社 半導体素子
JPH08195522A (ja) * 1994-11-16 1996-07-30 Hitachi Ltd 半導体レーザ
JPH09219563A (ja) * 1996-02-09 1997-08-19 Hitachi Ltd 半導体光素子とそれを用いた応用システム

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