JP4057803B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4057803B2
JP4057803B2 JP2001275593A JP2001275593A JP4057803B2 JP 4057803 B2 JP4057803 B2 JP 4057803B2 JP 2001275593 A JP2001275593 A JP 2001275593A JP 2001275593 A JP2001275593 A JP 2001275593A JP 4057803 B2 JP4057803 B2 JP 4057803B2
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JP
Japan
Prior art keywords
semiconductor device
water
insulating film
device surface
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001275593A
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English (en)
Japanese (ja)
Other versions
JP2003086675A5 (enExample
JP2003086675A (ja
Inventor
雅子 小寺
嘉孝 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001275593A priority Critical patent/JP4057803B2/ja
Priority to US10/237,786 priority patent/US6992009B2/en
Priority to KR10-2002-0054525A priority patent/KR100512500B1/ko
Priority to TW091120726A priority patent/TW557483B/zh
Priority to CNB021316236A priority patent/CN1202558C/zh
Publication of JP2003086675A publication Critical patent/JP2003086675A/ja
Publication of JP2003086675A5 publication Critical patent/JP2003086675A5/ja
Application granted granted Critical
Publication of JP4057803B2 publication Critical patent/JP4057803B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2001275593A 2001-09-11 2001-09-11 半導体装置の製造方法 Expired - Fee Related JP4057803B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001275593A JP4057803B2 (ja) 2001-09-11 2001-09-11 半導体装置の製造方法
US10/237,786 US6992009B2 (en) 2001-09-11 2002-09-10 Method of manufacturing a semiconductor device
KR10-2002-0054525A KR100512500B1 (ko) 2001-09-11 2002-09-10 반도체 장치의 제조 방법
TW091120726A TW557483B (en) 2001-09-11 2002-09-11 Method of manufacturing a semiconductor device
CNB021316236A CN1202558C (zh) 2001-09-11 2002-09-11 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001275593A JP4057803B2 (ja) 2001-09-11 2001-09-11 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003086675A JP2003086675A (ja) 2003-03-20
JP2003086675A5 JP2003086675A5 (enExample) 2005-06-16
JP4057803B2 true JP4057803B2 (ja) 2008-03-05

Family

ID=19100425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001275593A Expired - Fee Related JP4057803B2 (ja) 2001-09-11 2001-09-11 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US6992009B2 (enExample)
JP (1) JP4057803B2 (enExample)
KR (1) KR100512500B1 (enExample)
CN (1) CN1202558C (enExample)
TW (1) TW557483B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7188630B2 (en) * 2003-05-07 2007-03-13 Freescale Semiconductor, Inc. Method to passivate conductive surfaces during semiconductor processing
US20040248405A1 (en) * 2003-06-02 2004-12-09 Akira Fukunaga Method of and apparatus for manufacturing semiconductor device
US7700477B2 (en) * 2004-02-24 2010-04-20 Panasonic Corporation Method for fabricating semiconductor device
US7939482B2 (en) * 2005-05-25 2011-05-10 Freescale Semiconductor, Inc. Cleaning solution for a semiconductor wafer
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
WO2008106221A1 (en) * 2007-02-28 2008-09-04 Applied Materials, Inc. Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing
JP2009238896A (ja) * 2008-03-26 2009-10-15 Renesas Technology Corp 半導体集積回路装置の製造方法
CN102317773B (zh) 2009-01-23 2015-03-11 聚合物技术系统公司 具有一体生物传感器的诊断式多层干相测试条
JP5588786B2 (ja) * 2010-08-24 2014-09-10 出光興産株式会社 シリコンウェハ加工液およびシリコンウェハ加工方法
US8773072B2 (en) * 2011-08-29 2014-07-08 Aygis Ag Refuelable storage battery
KR20130084932A (ko) * 2012-01-18 2013-07-26 삼성전자주식회사 반도체 소자의 제조 방법
US8877075B2 (en) 2012-02-01 2014-11-04 Infineon Technologies Ag Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
CN109243976B (zh) 2013-01-11 2023-05-23 应用材料公司 化学机械抛光设备及方法
US10090396B2 (en) 2015-07-20 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating metal gate devices and resulting structures

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08126873A (ja) * 1994-10-28 1996-05-21 Nec Corp 電子部品等の洗浄方法及び装置
TW406329B (en) * 1998-04-30 2000-09-21 Ibm Method of cleaning semiconductor wafers after cmp planarization
JP4017029B2 (ja) 1998-11-16 2007-12-05 株式会社カネカ カバーレイ用接着剤およびカバーレイフィルム
WO2000044034A1 (en) * 1999-01-25 2000-07-27 Speedfam-Ipec Corporation Methods and cleaning solutions for post-chemical mechanical polishing
JP4127926B2 (ja) 1999-04-08 2008-07-30 株式会社荏原製作所 ポリッシング方法
US6468135B1 (en) 1999-04-30 2002-10-22 International Business Machines Corporation Method and apparatus for multiphase chemical mechanical polishing
US6569349B1 (en) * 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
JP2003051481A (ja) 2001-08-07 2003-02-21 Hitachi Ltd 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
CN1202558C (zh) 2005-05-18
US6992009B2 (en) 2006-01-31
KR20030022728A (ko) 2003-03-17
TW557483B (en) 2003-10-11
CN1405838A (zh) 2003-03-26
US20030068888A1 (en) 2003-04-10
JP2003086675A (ja) 2003-03-20
KR100512500B1 (ko) 2005-09-07

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