CN1202558C - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN1202558C
CN1202558C CNB021316236A CN02131623A CN1202558C CN 1202558 C CN1202558 C CN 1202558C CN B021316236 A CNB021316236 A CN B021316236A CN 02131623 A CN02131623 A CN 02131623A CN 1202558 C CN1202558 C CN 1202558C
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CN
China
Prior art keywords
mentioned
solution
water
pure water
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021316236A
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English (en)
Chinese (zh)
Other versions
CN1405838A (zh
Inventor
小寺雅子
松井嘉孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1405838A publication Critical patent/CN1405838A/zh
Application granted granted Critical
Publication of CN1202558C publication Critical patent/CN1202558C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNB021316236A 2001-09-11 2002-09-11 半导体装置的制造方法 Expired - Fee Related CN1202558C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP275593/2001 2001-09-11
JP2001275593A JP4057803B2 (ja) 2001-09-11 2001-09-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN1405838A CN1405838A (zh) 2003-03-26
CN1202558C true CN1202558C (zh) 2005-05-18

Family

ID=19100425

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021316236A Expired - Fee Related CN1202558C (zh) 2001-09-11 2002-09-11 半导体装置的制造方法

Country Status (5)

Country Link
US (1) US6992009B2 (enExample)
JP (1) JP4057803B2 (enExample)
KR (1) KR100512500B1 (enExample)
CN (1) CN1202558C (enExample)
TW (1) TW557483B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7188630B2 (en) * 2003-05-07 2007-03-13 Freescale Semiconductor, Inc. Method to passivate conductive surfaces during semiconductor processing
US20040248405A1 (en) * 2003-06-02 2004-12-09 Akira Fukunaga Method of and apparatus for manufacturing semiconductor device
US7700477B2 (en) * 2004-02-24 2010-04-20 Panasonic Corporation Method for fabricating semiconductor device
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
WO2008106221A1 (en) * 2007-02-28 2008-09-04 Applied Materials, Inc. Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing
JP2009238896A (ja) * 2008-03-26 2009-10-15 Renesas Technology Corp 半導体集積回路装置の製造方法
PL2387714T3 (pl) 2009-01-23 2018-08-31 Polymer Technology Systems, Inc. Diagnostyczny wielowarstwowy pasek testowy fazy suchej ze zintegrowanymi bioczujnikami
JP5588786B2 (ja) * 2010-08-24 2014-09-10 出光興産株式会社 シリコンウェハ加工液およびシリコンウェハ加工方法
US8773072B2 (en) * 2011-08-29 2014-07-08 Aygis Ag Refuelable storage battery
KR20130084932A (ko) * 2012-01-18 2013-07-26 삼성전자주식회사 반도체 소자의 제조 방법
US8877075B2 (en) 2012-02-01 2014-11-04 Infineon Technologies Ag Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
JP2016507896A (ja) * 2013-01-11 2016-03-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 化学機械研磨装置及び方法
US10090396B2 (en) 2015-07-20 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating metal gate devices and resulting structures

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08126873A (ja) * 1994-10-28 1996-05-21 Nec Corp 電子部品等の洗浄方法及び装置
TW406329B (en) * 1998-04-30 2000-09-21 Ibm Method of cleaning semiconductor wafers after cmp planarization
JP4017029B2 (ja) 1998-11-16 2007-12-05 株式会社カネカ カバーレイ用接着剤およびカバーレイフィルム
WO2000044034A1 (en) * 1999-01-25 2000-07-27 Speedfam-Ipec Corporation Methods and cleaning solutions for post-chemical mechanical polishing
JP4127926B2 (ja) 1999-04-08 2008-07-30 株式会社荏原製作所 ポリッシング方法
US6468135B1 (en) 1999-04-30 2002-10-22 International Business Machines Corporation Method and apparatus for multiphase chemical mechanical polishing
US6569349B1 (en) * 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
JP2003051481A (ja) 2001-08-07 2003-02-21 Hitachi Ltd 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
US6992009B2 (en) 2006-01-31
JP4057803B2 (ja) 2008-03-05
TW557483B (en) 2003-10-11
US20030068888A1 (en) 2003-04-10
KR20030022728A (ko) 2003-03-17
KR100512500B1 (ko) 2005-09-07
JP2003086675A (ja) 2003-03-20
CN1405838A (zh) 2003-03-26

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Granted publication date: 20050518

Termination date: 20091012