JP2003086675A5 - - Google Patents
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- Publication number
- JP2003086675A5 JP2003086675A5 JP2001275593A JP2001275593A JP2003086675A5 JP 2003086675 A5 JP2003086675 A5 JP 2003086675A5 JP 2001275593 A JP2001275593 A JP 2001275593A JP 2001275593 A JP2001275593 A JP 2001275593A JP 2003086675 A5 JP2003086675 A5 JP 2003086675A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- polishing pad
- device surface
- supplying
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 7
- 239000000126 substance Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 1
- 239000012964 benzotriazole Substances 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- -1 cuperone Chemical compound 0.000 claims 1
- 229940116901 diethyldithiocarbamate Drugs 0.000 claims 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 claims 1
- 239000003792 electrolyte Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229940081066 picolinic acid Drugs 0.000 claims 1
- 150000003254 radicals Chemical class 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001275593A JP4057803B2 (ja) | 2001-09-11 | 2001-09-11 | 半導体装置の製造方法 |
| US10/237,786 US6992009B2 (en) | 2001-09-11 | 2002-09-10 | Method of manufacturing a semiconductor device |
| KR10-2002-0054525A KR100512500B1 (ko) | 2001-09-11 | 2002-09-10 | 반도체 장치의 제조 방법 |
| TW091120726A TW557483B (en) | 2001-09-11 | 2002-09-11 | Method of manufacturing a semiconductor device |
| CNB021316236A CN1202558C (zh) | 2001-09-11 | 2002-09-11 | 半导体装置的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001275593A JP4057803B2 (ja) | 2001-09-11 | 2001-09-11 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003086675A JP2003086675A (ja) | 2003-03-20 |
| JP2003086675A5 true JP2003086675A5 (enExample) | 2005-06-16 |
| JP4057803B2 JP4057803B2 (ja) | 2008-03-05 |
Family
ID=19100425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001275593A Expired - Fee Related JP4057803B2 (ja) | 2001-09-11 | 2001-09-11 | 半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6992009B2 (enExample) |
| JP (1) | JP4057803B2 (enExample) |
| KR (1) | KR100512500B1 (enExample) |
| CN (1) | CN1202558C (enExample) |
| TW (1) | TW557483B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7188630B2 (en) * | 2003-05-07 | 2007-03-13 | Freescale Semiconductor, Inc. | Method to passivate conductive surfaces during semiconductor processing |
| US20040248405A1 (en) * | 2003-06-02 | 2004-12-09 | Akira Fukunaga | Method of and apparatus for manufacturing semiconductor device |
| US7700477B2 (en) * | 2004-02-24 | 2010-04-20 | Panasonic Corporation | Method for fabricating semiconductor device |
| US7939482B2 (en) * | 2005-05-25 | 2011-05-10 | Freescale Semiconductor, Inc. | Cleaning solution for a semiconductor wafer |
| US20100273330A1 (en) * | 2006-08-23 | 2010-10-28 | Citibank N.A. As Collateral Agent | Rinse formulation for use in the manufacture of an integrated circuit |
| WO2008106221A1 (en) * | 2007-02-28 | 2008-09-04 | Applied Materials, Inc. | Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing |
| JP2009238896A (ja) * | 2008-03-26 | 2009-10-15 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| CN102317773B (zh) | 2009-01-23 | 2015-03-11 | 聚合物技术系统公司 | 具有一体生物传感器的诊断式多层干相测试条 |
| JP5588786B2 (ja) * | 2010-08-24 | 2014-09-10 | 出光興産株式会社 | シリコンウェハ加工液およびシリコンウェハ加工方法 |
| US8773072B2 (en) * | 2011-08-29 | 2014-07-08 | Aygis Ag | Refuelable storage battery |
| KR20130084932A (ko) * | 2012-01-18 | 2013-07-26 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US8877075B2 (en) | 2012-02-01 | 2014-11-04 | Infineon Technologies Ag | Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning |
| CN109243976B (zh) | 2013-01-11 | 2023-05-23 | 应用材料公司 | 化学机械抛光设备及方法 |
| US10090396B2 (en) | 2015-07-20 | 2018-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating metal gate devices and resulting structures |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08126873A (ja) * | 1994-10-28 | 1996-05-21 | Nec Corp | 電子部品等の洗浄方法及び装置 |
| TW406329B (en) * | 1998-04-30 | 2000-09-21 | Ibm | Method of cleaning semiconductor wafers after cmp planarization |
| JP4017029B2 (ja) | 1998-11-16 | 2007-12-05 | 株式会社カネカ | カバーレイ用接着剤およびカバーレイフィルム |
| WO2000044034A1 (en) * | 1999-01-25 | 2000-07-27 | Speedfam-Ipec Corporation | Methods and cleaning solutions for post-chemical mechanical polishing |
| JP4127926B2 (ja) | 1999-04-08 | 2008-07-30 | 株式会社荏原製作所 | ポリッシング方法 |
| US6468135B1 (en) | 1999-04-30 | 2002-10-22 | International Business Machines Corporation | Method and apparatus for multiphase chemical mechanical polishing |
| US6569349B1 (en) * | 2000-10-23 | 2003-05-27 | Applied Materials Inc. | Additives to CMP slurry to polish dielectric films |
| JP2003051481A (ja) | 2001-08-07 | 2003-02-21 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
-
2001
- 2001-09-11 JP JP2001275593A patent/JP4057803B2/ja not_active Expired - Fee Related
-
2002
- 2002-09-10 US US10/237,786 patent/US6992009B2/en not_active Expired - Fee Related
- 2002-09-10 KR KR10-2002-0054525A patent/KR100512500B1/ko not_active Expired - Fee Related
- 2002-09-11 CN CNB021316236A patent/CN1202558C/zh not_active Expired - Fee Related
- 2002-09-11 TW TW091120726A patent/TW557483B/zh not_active IP Right Cessation
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