JP4011870B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP4011870B2
JP4011870B2 JP2001241793A JP2001241793A JP4011870B2 JP 4011870 B2 JP4011870 B2 JP 4011870B2 JP 2001241793 A JP2001241793 A JP 2001241793A JP 2001241793 A JP2001241793 A JP 2001241793A JP 4011870 B2 JP4011870 B2 JP 4011870B2
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Japan
Prior art keywords
film
temperature
insulating film
integrated circuit
circuit device
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Expired - Fee Related
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JP2001241793A
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English (en)
Japanese (ja)
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JP2003060082A5 (https=
JP2003060082A (ja
Inventor
剛 藤原
勝征 朝香
康裕 成吉
義典 星野
一稔 大森
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001241793A priority Critical patent/JP4011870B2/ja
Priority to TW091114347A priority patent/TW569429B/zh
Priority to US10/187,003 priority patent/US6803271B2/en
Priority to KR1020020039991A priority patent/KR100617621B1/ko
Publication of JP2003060082A publication Critical patent/JP2003060082A/ja
Priority to US10/930,845 priority patent/US7084055B2/en
Publication of JP2003060082A5 publication Critical patent/JP2003060082A5/ja
Application granted granted Critical
Publication of JP4011870B2 publication Critical patent/JP4011870B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001241793A 2001-08-09 2001-08-09 半導体集積回路装置の製造方法 Expired - Fee Related JP4011870B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001241793A JP4011870B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法
TW091114347A TW569429B (en) 2001-08-09 2002-06-28 Method for manufacturing semiconductor integrated circuit device
US10/187,003 US6803271B2 (en) 2001-08-09 2002-07-02 Method for manufacturing semiconductor integrated circuit device
KR1020020039991A KR100617621B1 (ko) 2001-08-09 2002-07-10 반도체 집적회로장치의 제조방법
US10/930,845 US7084055B2 (en) 2001-08-09 2004-09-01 Method for manufacturing semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001241793A JP4011870B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003060082A JP2003060082A (ja) 2003-02-28
JP2003060082A5 JP2003060082A5 (https=) 2005-04-07
JP4011870B2 true JP4011870B2 (ja) 2007-11-21

Family

ID=19072168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001241793A Expired - Fee Related JP4011870B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (2) US6803271B2 (https=)
JP (1) JP4011870B2 (https=)
KR (1) KR100617621B1 (https=)
TW (1) TW569429B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100761361B1 (ko) * 2006-05-02 2007-09-27 주식회사 하이닉스반도체 반도체 소자 및 그 제조방법
JP5302522B2 (ja) * 2007-07-02 2013-10-02 スパンション エルエルシー 半導体装置及びその製造方法
US8034691B2 (en) * 2008-08-18 2011-10-11 Macronix International Co., Ltd. HDP-CVD process, filling-in process utilizing HDP-CVD, and HDP-CVD system
KR101676810B1 (ko) 2014-10-30 2016-11-16 삼성전자주식회사 반도체 소자, 이를 포함하는 디스플레이 드라이버 집적 회로 및 디스플레이 장치
GB2614089B (en) 2021-12-21 2024-05-29 Cirrus Logic Int Semiconductor Ltd Current estimation in a power converter

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
JP2747036B2 (ja) * 1989-07-07 1998-05-06 日本電信電話株式会社 薄膜形成方法
US5654589A (en) * 1995-06-06 1997-08-05 Advanced Micro Devices, Incorporated Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application
JPH09289247A (ja) 1996-04-19 1997-11-04 Sony Corp コンタクト形成方法
US6157083A (en) * 1996-06-03 2000-12-05 Nec Corporation Fluorine doping concentrations in a multi-structure semiconductor device
JP2985789B2 (ja) 1996-08-30 1999-12-06 日本電気株式会社 半導体装置の製造方法
JP2962250B2 (ja) * 1996-11-12 1999-10-12 日本電気株式会社 半導体記憶装置の製造方法
JPH10173049A (ja) 1996-12-11 1998-06-26 Fujitsu Ltd 半導体装置及びその製造方法
JP3109449B2 (ja) * 1997-04-25 2000-11-13 日本電気株式会社 多層配線構造の形成方法
KR19980084463A (ko) * 1997-05-23 1998-12-05 김영환 반도체 소자의 제조방법
KR100447259B1 (ko) * 1997-06-30 2004-11-03 주식회사 하이닉스반도체 반도체소자의제조방법
KR19990042091A (ko) * 1997-11-25 1999-06-15 김영환 반도체 장치의 절연막 평탄화 방법
JP3686248B2 (ja) * 1998-01-26 2005-08-24 株式会社日立製作所 半導体集積回路装置およびその製造方法
JPH11243180A (ja) 1998-02-25 1999-09-07 Sony Corp 半導体装置の製造方法
US6165834A (en) * 1998-05-07 2000-12-26 Micron Technology, Inc. Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
JP4052729B2 (ja) * 1998-06-12 2008-02-27 松下電器産業株式会社 半導体装置及びその製造方法
US5858829A (en) * 1998-06-29 1999-01-12 Vanguard International Semiconductor Corporation Method for fabricating dynamic random access memory (DRAM) cells with minimum active cell areas using sidewall-spacer bit lines
US6150209A (en) * 1999-04-23 2000-11-21 Taiwan Semiconductor Manufacturing Company Leakage current reduction of a tantalum oxide layer via a nitrous oxide high density annealing procedure
KR20010001924A (ko) * 1999-06-09 2001-01-05 김영환 반도체소자의 커패시터 제조방법
JP2001007202A (ja) * 1999-06-22 2001-01-12 Sony Corp 半導体装置の製造方法
KR100304503B1 (ko) * 1999-07-09 2001-11-01 김영환 반도체장치의 제조방법
US6485988B2 (en) * 1999-12-22 2002-11-26 Texas Instruments Incorporated Hydrogen-free contact etch for ferroelectric capacitor formation

Also Published As

Publication number Publication date
US7084055B2 (en) 2006-08-01
KR20030014569A (ko) 2003-02-19
US6803271B2 (en) 2004-10-12
KR100617621B1 (ko) 2006-09-01
JP2003060082A (ja) 2003-02-28
US20050026358A1 (en) 2005-02-03
US20030032233A1 (en) 2003-02-13
TW569429B (en) 2004-01-01

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