JP4002893B2 - 単一リードフレームのhブリッジ - Google Patents
単一リードフレームのhブリッジ Download PDFInfo
- Publication number
- JP4002893B2 JP4002893B2 JP2003575426A JP2003575426A JP4002893B2 JP 4002893 B2 JP4002893 B2 JP 4002893B2 JP 2003575426 A JP2003575426 A JP 2003575426A JP 2003575426 A JP2003575426 A JP 2003575426A JP 4002893 B2 JP4002893 B2 JP 4002893B2
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- Prior art keywords
- circuit
- potential side
- low
- control
- mosfets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000003990 capacitor Substances 0.000 claims description 9
- 230000006870 function Effects 0.000 description 12
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/08—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors
- H02H7/0833—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors for electric motors with control arrangements
- H02H7/0838—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors for electric motors with control arrangements with H-bridge circuit
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
- H02P7/03—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors
- H02P7/04—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors by means of a H-bridge circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P2203/00—Indexing scheme relating to controlling arrangements characterised by the means for detecting the position of the rotor
- H02P2203/07—Motor variable determination based on the ON-resistance of a power switch, i.e. the voltage across the switch is measured during the ON state of the switch and used to determine the current in the motor and to calculate the speed
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Direct Current Motors (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
RDS(ON)LS・Rthjals<1/2[RDS(ON)HS・Rthjahs]
ここで、
RDS(ON)lsは、低電位側MOSFET40、41のオン抵抗であり、
RDS(ON)hsは、高電位側MOSFET31、32のオン抵抗であり、
Rthjalsは、低電位側MOSFET40、41の接合周囲間の熱抵抗であり、
Rthjahsは、高電位側MOSFET31、32の接合周囲間の熱抵抗である。
RDSON - 12mΩ
Vcc - 5.5から35V
ICONT@85℃周囲 - 6.0アンペア
I遮断 - 30アンペア
動作周波数 - 20kHz
27、28 ソース電極
23、24 ドレイン電極
30 電気負荷(直流モータ)
31、32 第1および第2の高電位側MOSゲート制御デバイス(知能電力スイッチ)
33 パッケージ(絶縁ハウジング)
40、41 低電位側MOSゲート制御デバイス
61、62 シュートスルー保護回路
63、64 過電流保護回路
70 発振器(ソフト始動回路)
71 比較器(ソフト始動回路)
80 マイクロコントローラ
90 抵抗器(RC回路)
91 コンデンサ(RC回路)
130 熱センサ(温度感知デバイス)
IN(1)、IN(2) 入力信号
M1、M2 第1および第2のノード
IC 制御IC
Claims (6)
- 第1および第2の高電位側MOSFETおよび第1および第2の低電位側MOSFETであって、前記MOSFETの各々がそれぞれのドレイン電極、ソース電極および制御電極を有し、前記高電位側MOSFETの前記ドレイン電極および前記低電位側MOSFETの前記ソース電極が電力入力端子に接続され、前記第1および第2の高電位側MOSFETの前記ソース電極が第1および第2のノードで前記第1および第2の低電位側電極の前記ドレイン電極にそれぞれ接続され、前記第1および第2のノードが出力ブリッジ端子を確定するものである第1および第2の高電位側MOSFETおよび第1および第2の低電位側MOSFETと、
前記高電位側MOSFETおよび低電位側MOSFETの動作を制御する制御回路であって、外部ブリッジ制御回路から入力制御信号を受け取るように接続可能な入力端子を有し、かつ前記高電位側MOSFETの前記制御電極に接続された出力端子を有する制御回路と、
前記第1および第2の高電位側MOSFETおよび前記制御回路を支持する支持物と、
前記第1および第2の高電位側MOSFETおよび前記制御回路を囲む共通絶縁ハウジングと、
前記共通絶縁ハウジングから延びる接続ピンと、
前記制御回路に接続された制御端子、前記第 1 のノードに接続された入力端子、および前記第 1 の低電位側 MOSFET の制御電極に接続された出力端子を有する第 1 のシュートスルー保護回路と、
前記制御回路に接続された制御端子、前記第 2 のノードに接続された入力端子、および前記第 2 の低電位側 MOSFET の制御電極に接続された出力端子を有する第 2 のシュートスルー保護回路と
を備える、電気負荷を駆動するHブリッジ駆動装置であって、
前記第 1 のシュートスルー保護回路は、前記制御回路によって制御され、前記第 1 の高電位側 MOSFET のターンオフ時には、このターンオフに応じて前記第 1 のノードの電圧が特定の電圧値以下になったときに、前記第 1 の低電位側 MOSFET の制御電極の電圧を制御して前記第 1 の低電位側 MOSFET をオンし、
前記第 2 のシュートスルー保護回路は、前記制御回路によって制御され、前記第 2 の高電位側 MOSFET のターンオフ時には、このターンオフに応じて前記第 2 のノードの電圧が特定の電圧値以下になったときに、前記第 2 の低電位側 MOSFET の制御電極の電圧を制御して前記第 2 の低電位側 MOSFET をオンする
ことを特徴とするHブリッジ駆動装置。 - 前記低電位側MOSFETは、常時オンであることを特徴とする請求項1に記載のHブリッジ駆動装置。
- 前記接続ピンは、前記第1および第2の高電位側MOSFETの前記それぞれの制御電極に結合されたIN1およびIN2ピン、前記電力入力端子に接続されたVccピンおよびGNDピン、および前記第1および第2のノードにそれぞれ接続されたM1およびM2ピンを含む
ことを特徴とする請求項1に記載のHブリッジ駆動装置。 - さらに、ソフト始動PWM信号を前記低電位側MOSFETの前記制御電極に加えるPWM発生器を備えることを特徴とする請求項1に記載のHブリッジ駆動装置。
- さらに、前記PWM発生器のデューティサイクルを制御するための外部RC回路を備えることを特徴とする請求項4に記載のHブリッジ駆動装置。
- 前記外部RC回路は、抵抗器と、この抵抗器に直列接続されたコンデンサとを有していて、
前記接続ピンは、前記外部RC回路の抵抗器の一端に接続されたVRCピン、前記RC回路の抵抗器とコンデンサの間のノードに接続されたSSピン、および前記RC回路のコンデンサの一端に接続されたGNDピンを含むことを特徴とする請求項5に記載のHブリッジ駆動装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/091,194 US6747300B2 (en) | 2002-03-04 | 2002-03-04 | H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing |
PCT/US2003/001103 WO2003077322A2 (en) | 2002-03-04 | 2003-01-13 | H-bridge with single lead frame |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005519576A JP2005519576A (ja) | 2005-06-30 |
JP4002893B2 true JP4002893B2 (ja) | 2007-11-07 |
Family
ID=27804106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003575426A Expired - Fee Related JP4002893B2 (ja) | 2002-03-04 | 2003-01-13 | 単一リードフレームのhブリッジ |
Country Status (6)
Country | Link |
---|---|
US (3) | US6747300B2 (ja) |
EP (1) | EP1481426A2 (ja) |
JP (1) | JP4002893B2 (ja) |
CN (1) | CN1830091B (ja) |
AU (1) | AU2003202997A1 (ja) |
WO (1) | WO2003077322A2 (ja) |
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- 2003-01-13 JP JP2003575426A patent/JP4002893B2/ja not_active Expired - Fee Related
- 2003-01-13 CN CN038042428A patent/CN1830091B/zh not_active Expired - Lifetime
- 2003-01-13 WO PCT/US2003/001103 patent/WO2003077322A2/en active Application Filing
- 2003-01-13 AU AU2003202997A patent/AU2003202997A1/en not_active Abandoned
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CN1830091A (zh) | 2006-09-06 |
EP1481426A2 (en) | 2004-12-01 |
WO2003077322A2 (en) | 2003-09-18 |
CN1830091B (zh) | 2010-04-28 |
US6747300B2 (en) | 2004-06-08 |
US7465610B2 (en) | 2008-12-16 |
WO2003077322A3 (en) | 2003-12-18 |
US7115922B2 (en) | 2006-10-03 |
AU2003202997A1 (en) | 2003-09-22 |
JP2005519576A (ja) | 2005-06-30 |
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