JP3999301B2 - 露光データ作成方法 - Google Patents

露光データ作成方法 Download PDF

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Publication number
JP3999301B2
JP3999301B2 JP05339697A JP5339697A JP3999301B2 JP 3999301 B2 JP3999301 B2 JP 3999301B2 JP 05339697 A JP05339697 A JP 05339697A JP 5339697 A JP5339697 A JP 5339697A JP 3999301 B2 JP3999301 B2 JP 3999301B2
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JP
Japan
Prior art keywords
exposure
data
pattern data
cpu
exposure pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP05339697A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10256113A (ja
JPH10256113A5 (enExample
Inventor
正明 宮島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP05339697A priority Critical patent/JP3999301B2/ja
Priority to US08/963,587 priority patent/US5995878A/en
Priority to KR1019970078530A priority patent/KR100291494B1/ko
Publication of JPH10256113A publication Critical patent/JPH10256113A/ja
Publication of JPH10256113A5 publication Critical patent/JPH10256113A5/ja
Application granted granted Critical
Publication of JP3999301B2 publication Critical patent/JP3999301B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP05339697A 1997-03-07 1997-03-07 露光データ作成方法 Expired - Lifetime JP3999301B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP05339697A JP3999301B2 (ja) 1997-03-07 1997-03-07 露光データ作成方法
US08/963,587 US5995878A (en) 1997-03-07 1997-11-04 Method and apparatus for generating exposure data of semiconductor integrated circuit
KR1019970078530A KR100291494B1 (ko) 1997-03-07 1997-12-30 노광데이타작성방법과노광데이타작성장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05339697A JP3999301B2 (ja) 1997-03-07 1997-03-07 露光データ作成方法

Publications (3)

Publication Number Publication Date
JPH10256113A JPH10256113A (ja) 1998-09-25
JPH10256113A5 JPH10256113A5 (enExample) 2005-01-20
JP3999301B2 true JP3999301B2 (ja) 2007-10-31

Family

ID=12941675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05339697A Expired - Lifetime JP3999301B2 (ja) 1997-03-07 1997-03-07 露光データ作成方法

Country Status (3)

Country Link
US (1) US5995878A (enExample)
JP (1) JP3999301B2 (enExample)
KR (1) KR100291494B1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278124B1 (en) * 1998-03-05 2001-08-21 Dupont Photomasks, Inc Electron beam blanking method and system for electron beam lithographic processing
US6272398B1 (en) * 1998-09-21 2001-08-07 Siebolt Hettinga Processor-based process control system with intuitive programming capabilities
KR100336525B1 (ko) * 2000-08-07 2002-05-11 윤종용 반도체 장치의 제조를 위한 노광 방법
US6812474B2 (en) * 2001-07-13 2004-11-02 Applied Materials, Inc. Pattern generation method and apparatus using cached cells of hierarchical data
JP2003100603A (ja) * 2001-09-25 2003-04-04 Canon Inc 露光装置及びその制御方法並びにデバイスの製造方法
JP4989158B2 (ja) * 2005-09-07 2012-08-01 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法
KR100660045B1 (ko) * 2005-10-13 2006-12-22 엘지전자 주식회사 마스크리스 노광기용 패턴정보 생성방법 및 노광방법
JP4778776B2 (ja) * 2005-11-01 2011-09-21 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法
JP4778777B2 (ja) * 2005-11-01 2011-09-21 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法
JP5068515B2 (ja) * 2006-11-22 2012-11-07 株式会社ニューフレアテクノロジー 描画データの作成方法、描画データの変換方法及び荷電粒子線描画方法
CN101252101B (zh) * 2008-01-17 2010-08-11 中电华清微电子工程中心有限公司 采用曝光场拼接技术制作超大功率智能器件的方法
US7941780B2 (en) * 2008-04-18 2011-05-10 International Business Machines Corporation Intersect area based ground rule for semiconductor design
JP5357530B2 (ja) * 2008-12-16 2013-12-04 株式会社ニューフレアテクノロジー 描画用データの処理方法、描画方法、及び描画装置
JP5498105B2 (ja) * 2009-09-15 2014-05-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5563385B2 (ja) 2010-06-23 2014-07-30 ラピスセミコンダクタ株式会社 レイアウトパタン生成装置及びレイアウトパタン生成方法
US9141730B2 (en) * 2011-09-12 2015-09-22 Applied Materials Israel, Ltd. Method of generating a recipe for a manufacturing tool and system thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046012A (en) * 1988-06-17 1991-09-03 Fujitsu Limited Pattern data processing method
US5253182A (en) * 1990-02-20 1993-10-12 Hitachi, Ltd. Method of and apparatus for converting design pattern data to exposure data
JP3043031B2 (ja) * 1990-06-01 2000-05-22 富士通株式会社 露光データ作成方法，パターン露光装置及びパターン露光方法
JP3118048B2 (ja) * 1991-12-27 2000-12-18 富士通株式会社 ブロック露光用パターン抽出方法
US5590048A (en) * 1992-06-05 1996-12-31 Fujitsu Limited Block exposure pattern data extracting system and method for charged particle beam exposure
EP0608657A1 (en) * 1993-01-29 1994-08-03 International Business Machines Corporation Apparatus and method for preparing shape data for proximity correction
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation

Also Published As

Publication number Publication date
JPH10256113A (ja) 1998-09-25
US5995878A (en) 1999-11-30
KR100291494B1 (ko) 2001-07-12
KR19980079561A (ko) 1998-11-25

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