KR100291494B1 - 노광데이타작성방법과노광데이타작성장치 - Google Patents

노광데이타작성방법과노광데이타작성장치 Download PDF

Info

Publication number
KR100291494B1
KR100291494B1 KR1019970078530A KR19970078530A KR100291494B1 KR 100291494 B1 KR100291494 B1 KR 100291494B1 KR 1019970078530 A KR1019970078530 A KR 1019970078530A KR 19970078530 A KR19970078530 A KR 19970078530A KR 100291494 B1 KR100291494 B1 KR 100291494B1
Authority
KR
South Korea
Prior art keywords
exposure
data
pattern data
integrated
exposure pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970078530A
Other languages
English (en)
Korean (ko)
Other versions
KR19980079561A (ko
Inventor
마사아키 미야지마
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR19980079561A publication Critical patent/KR19980079561A/ko
Application granted granted Critical
Publication of KR100291494B1 publication Critical patent/KR100291494B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019970078530A 1997-03-07 1997-12-30 노광데이타작성방법과노광데이타작성장치 Expired - Fee Related KR100291494B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-053396 1997-03-07
JP05339697A JP3999301B2 (ja) 1997-03-07 1997-03-07 露光データ作成方法

Publications (2)

Publication Number Publication Date
KR19980079561A KR19980079561A (ko) 1998-11-25
KR100291494B1 true KR100291494B1 (ko) 2001-07-12

Family

ID=12941675

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970078530A Expired - Fee Related KR100291494B1 (ko) 1997-03-07 1997-12-30 노광데이타작성방법과노광데이타작성장치

Country Status (3)

Country Link
US (1) US5995878A (enExample)
JP (1) JP3999301B2 (enExample)
KR (1) KR100291494B1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278124B1 (en) * 1998-03-05 2001-08-21 Dupont Photomasks, Inc Electron beam blanking method and system for electron beam lithographic processing
US6272398B1 (en) * 1998-09-21 2001-08-07 Siebolt Hettinga Processor-based process control system with intuitive programming capabilities
KR100336525B1 (ko) * 2000-08-07 2002-05-11 윤종용 반도체 장치의 제조를 위한 노광 방법
US6812474B2 (en) * 2001-07-13 2004-11-02 Applied Materials, Inc. Pattern generation method and apparatus using cached cells of hierarchical data
JP2003100603A (ja) * 2001-09-25 2003-04-04 Canon Inc 露光装置及びその制御方法並びにデバイスの製造方法
JP4989158B2 (ja) * 2005-09-07 2012-08-01 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法
KR100660045B1 (ko) * 2005-10-13 2006-12-22 엘지전자 주식회사 마스크리스 노광기용 패턴정보 생성방법 및 노광방법
JP4778776B2 (ja) * 2005-11-01 2011-09-21 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法
JP4778777B2 (ja) * 2005-11-01 2011-09-21 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法
JP5068515B2 (ja) * 2006-11-22 2012-11-07 株式会社ニューフレアテクノロジー 描画データの作成方法、描画データの変換方法及び荷電粒子線描画方法
CN101252101B (zh) * 2008-01-17 2010-08-11 中电华清微电子工程中心有限公司 采用曝光场拼接技术制作超大功率智能器件的方法
US7941780B2 (en) * 2008-04-18 2011-05-10 International Business Machines Corporation Intersect area based ground rule for semiconductor design
JP5357530B2 (ja) * 2008-12-16 2013-12-04 株式会社ニューフレアテクノロジー 描画用データの処理方法、描画方法、及び描画装置
JP5498105B2 (ja) * 2009-09-15 2014-05-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5563385B2 (ja) 2010-06-23 2014-07-30 ラピスセミコンダクタ株式会社 レイアウトパタン生成装置及びレイアウトパタン生成方法
US9141730B2 (en) * 2011-09-12 2015-09-22 Applied Materials Israel, Ltd. Method of generating a recipe for a manufacturing tool and system thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182899A (ja) * 1991-12-27 1993-07-23 Fujitsu Ltd ブロック露光用パターン抽出方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046012A (en) * 1988-06-17 1991-09-03 Fujitsu Limited Pattern data processing method
US5253182A (en) * 1990-02-20 1993-10-12 Hitachi, Ltd. Method of and apparatus for converting design pattern data to exposure data
JP3043031B2 (ja) * 1990-06-01 2000-05-22 富士通株式会社 露光データ作成方法，パターン露光装置及びパターン露光方法
US5590048A (en) * 1992-06-05 1996-12-31 Fujitsu Limited Block exposure pattern data extracting system and method for charged particle beam exposure
EP0608657A1 (en) * 1993-01-29 1994-08-03 International Business Machines Corporation Apparatus and method for preparing shape data for proximity correction
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182899A (ja) * 1991-12-27 1993-07-23 Fujitsu Ltd ブロック露光用パターン抽出方法

Also Published As

Publication number Publication date
JPH10256113A (ja) 1998-09-25
US5995878A (en) 1999-11-30
JP3999301B2 (ja) 2007-10-31
KR19980079561A (ko) 1998-11-25

Similar Documents

Publication Publication Date Title
KR100291494B1 (ko) 노광데이타작성방법과노광데이타작성장치
US4377849A (en) Macro assembler process for automated circuit design
JP3612166B2 (ja) 荷電ビーム描画データ作成方法および装置
US5051938A (en) Simulation of selected logic circuit designs
US6543039B1 (en) Method of designing integrated circuit and apparatus for designing integrated circuit
JP4999013B2 (ja) 集積化されたｏｐｃ検証ツール
US5416719A (en) Computerized generation of truth tables for sequential and combinatorial cells
WO1995008811A1 (en) Data reduction in a system for analyzing geometric databases
JP4156700B2 (ja) 露光データ作成方法、露光データ作成装置、及び、記録媒体
CN117034822B (zh) 基于三步式仿真的验证方法、电子设备和介质
KR970008535B1 (ko) 배치요소 배치설계 시스템
US7269819B2 (en) Method and apparatus for generating exposure data
KR100269497B1 (ko) 부분 일괄 노광에서의 노광 쇼트수를 저감시킨집적 회로 패턴 데이타 형성 장치 및 패턴 데이타 형성 방법
Karafyllidis Acceleration of cellular automata algorithms using genetic algorithms
JP3923919B2 (ja) 露光データ生成方法及び露光データ生成プログラム
US6189129B1 (en) Figure operation of layout for high speed processing
JP2803630B2 (ja) 図形処理方法および装置
US20010037487A1 (en) Method of extracting characters and computer-readable recording medium
JP3166847B2 (ja) プリント基板設計における配線収容性評価プログラムを記録した記録媒体および装置
JP2000066365A (ja) フォトマスクパターン設計支援装置、フォトマスクパターン設計支援方法、および、フォトマスクパターン設計支援プログラムを記録した記録媒体
KR20000016957A (ko) 노광데이터작성방법
JP3696302B2 (ja) テストベクトル生成方法及び生成装置
JP4745278B2 (ja) 回路パターンの設計方法及び回路パターンの設計システム
Sugihara Optimal character-size exploration for increasing throughput of MCC lithographic systems
JP2992081B2 (ja) パターン作成装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20080310

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20090314

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20090314

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000