JP3996699B2 - 半導体光検出器 - Google Patents

半導体光検出器 Download PDF

Info

Publication number
JP3996699B2
JP3996699B2 JP08162498A JP8162498A JP3996699B2 JP 3996699 B2 JP3996699 B2 JP 3996699B2 JP 08162498 A JP08162498 A JP 08162498A JP 8162498 A JP8162498 A JP 8162498A JP 3996699 B2 JP3996699 B2 JP 3996699B2
Authority
JP
Japan
Prior art keywords
layer
mesa
junction
inp
guard ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP08162498A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10308527A (ja
JPH10308527A5 (enExample
Inventor
グラム・ハスナイン
ジェームズ・エヌ・ホレンホースト
チュング−イー・スー
Original Assignee
アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド filed Critical アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド
Publication of JPH10308527A publication Critical patent/JPH10308527A/ja
Publication of JPH10308527A5 publication Critical patent/JPH10308527A5/ja
Application granted granted Critical
Publication of JP3996699B2 publication Critical patent/JP3996699B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP08162498A 1997-04-01 1998-03-27 半導体光検出器 Expired - Fee Related JP3996699B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/831-843 1997-04-01
US08/831,843 US5866936A (en) 1997-04-01 1997-04-01 Mesa-structure avalanche photodiode having a buried epitaxial junction

Publications (3)

Publication Number Publication Date
JPH10308527A JPH10308527A (ja) 1998-11-17
JPH10308527A5 JPH10308527A5 (enExample) 2005-09-15
JP3996699B2 true JP3996699B2 (ja) 2007-10-24

Family

ID=25260000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08162498A Expired - Fee Related JP3996699B2 (ja) 1997-04-01 1998-03-27 半導体光検出器

Country Status (4)

Country Link
US (1) US5866936A (enExample)
EP (1) EP0869561B1 (enExample)
JP (1) JP3996699B2 (enExample)
DE (1) DE69802739T2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450454B2 (ja) * 1999-08-26 2010-04-14 Ｏｋｉセミコンダクタ株式会社 半導体受光素子
US20040000675A1 (en) * 2002-05-24 2004-01-01 Opnext Japan, Inc. Method for manufacturing avalanche photodiodes, avalanche photodiode, optical receiver module and optical receiving apparatus
JP4084958B2 (ja) 2002-05-24 2008-04-30 日本オプネクスト株式会社 半導体受光装置の製造方法
US6846172B2 (en) * 2002-06-07 2005-01-25 The Procter & Gamble Company Embossing apparatus
US6794631B2 (en) 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode
US6730979B2 (en) 2002-09-12 2004-05-04 The Boeing Company Recessed p-type region cap layer avalanche photodiode
JP4755854B2 (ja) 2005-06-02 2011-08-24 富士通株式会社 半導体受光装置及びその製造方法
US7863647B1 (en) * 2007-03-19 2011-01-04 Northrop Grumman Systems Corporation SiC avalanche photodiode with improved edge termination
JP4861887B2 (ja) * 2007-04-20 2012-01-25 日本オプネクスト株式会社 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法
US8030684B2 (en) * 2007-07-18 2011-10-04 Jds Uniphase Corporation Mesa-type photodetectors with lateral diffusion junctions
US7834379B2 (en) * 2007-07-18 2010-11-16 Jds Uniphase Corporation Avalanche photodiode with edge breakdown suppression
US7893464B2 (en) * 2008-03-28 2011-02-22 Jds Uniphase Corporation Semiconductor photodiode and method of manufacture thereof
US8008688B2 (en) * 2008-04-01 2011-08-30 Jds Uniphase Corporation Photodiode and method of fabrication
US8198650B2 (en) * 2008-12-08 2012-06-12 General Electric Company Semiconductor devices and systems
US8242432B2 (en) * 2009-10-23 2012-08-14 Kotura, Inc. System having light sensor with enhanced sensitivity including a multiplication layer for generating additional electrons
US8639065B2 (en) * 2010-06-18 2014-01-28 Kotura, Inc. System having avalanche effect light sensor with enhanced sensitivity
EP2987186B1 (en) 2013-04-19 2020-07-01 Lightspin Technologies, Inc. Integrated avalanche photodiode arrays
US9377581B2 (en) 2013-05-08 2016-06-28 Mellanox Technologies Silicon Photonics Inc. Enhancing the performance of light sensors that receive light signals from an integrated waveguide
CN106356290A (zh) * 2016-10-28 2017-01-25 中国电子科技集团公司第四十四研究所 1064nm硅基雪崩探测器及其制作方法
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices
RU2721161C1 (ru) * 2019-11-19 2020-05-18 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ изготовления фотопреобразователя
CN111755555B (zh) * 2020-07-06 2022-01-07 武汉光谷量子技术有限公司 台面型二极管及其制作方法、阵列芯片的制作方法
TWI768831B (zh) * 2021-04-16 2022-06-21 聯亞光電工業股份有限公司 非擴散型光電二極體
WO2025045834A1 (en) * 2023-08-30 2025-03-06 Ams-Osram International Gmbh Two-sided etched light generating structure and optoelectronic device

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
JPS57111073A (en) * 1980-12-26 1982-07-10 Sumitomo Electric Ind Ltd Semiconductor light-receiving element
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
US4885622A (en) * 1984-03-23 1989-12-05 Oki Electric Industry Co., Ltd. Pin photodiode and method of fabrication of the same
US4719498A (en) * 1984-05-18 1988-01-12 Fujitsu Limited Optoelectronic integrated circuit
JPH0824199B2 (ja) * 1984-05-31 1996-03-06 富士通株式会社 半導体受光素子の製造方法
JPS6180875A (ja) * 1984-09-27 1986-04-24 Nec Corp 半導体装置
JPS61144076A (ja) * 1984-12-18 1986-07-01 Fujitsu Ltd 半導体受光素子
DE3678338D1 (de) * 1985-05-20 1991-05-02 Nec Corp Planare heterouebergang-avalanche-fotodiode.
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
GB8817886D0 (en) * 1988-07-27 1988-09-01 British Telecomm Avalanche photodiode structure
JPH0273676A (ja) * 1988-09-09 1990-03-13 Fujitsu Ltd アバランシフォトダイオード
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
JPH02248081A (ja) * 1989-03-22 1990-10-03 Toshiba Corp アバランシェフォトダイオード及びその製造方法
JPH02296379A (ja) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp アバランシェフォトダイオード
GB8913198D0 (en) * 1989-06-08 1989-07-26 British Telecomm Guard ring structure
JP2934294B2 (ja) * 1990-04-09 1999-08-16 日本電信電話株式会社 アバランシェフォトダイオード
JP2970815B2 (ja) * 1990-04-11 1999-11-02 株式会社東芝 半導体受光素子
US5045908A (en) * 1990-09-25 1991-09-03 Motorola, Inc. Vertically and laterally illuminated p-i-n photodiode
US5204539A (en) * 1991-01-28 1993-04-20 Nec Corporation Avalanche photodiode with hetero-periodical structure
JPH0521829A (ja) * 1991-07-12 1993-01-29 Hitachi Ltd 半導体装置
JP3254532B2 (ja) * 1992-08-06 2002-02-12 富士通株式会社 アバランシェホトダイオード
JP2639347B2 (ja) * 1994-06-23 1997-08-13 日本電気株式会社 半導体受光素子
JP2601231B2 (ja) * 1994-12-22 1997-04-16 日本電気株式会社 超格子アバランシェフォトダイオード
US5610416A (en) * 1995-02-16 1997-03-11 Hewlett-Packard Company Avalanche photodiode with epitaxially regrown guard rings

Also Published As

Publication number Publication date
JPH10308527A (ja) 1998-11-17
EP0869561B1 (en) 2001-12-05
US5866936A (en) 1999-02-02
DE69802739T2 (de) 2002-09-05
DE69802739D1 (de) 2002-01-17
EP0869561A2 (en) 1998-10-07
EP0869561A3 (en) 1999-09-01

Similar Documents

Publication Publication Date Title
JP3996699B2 (ja) 半導体光検出器
US5843804A (en) Method of making avalanche photodiodes with epitaxially-regrown guard rings
US4651187A (en) Avalanche photodiode
EP0043734B1 (en) Avalanche photodiodes
JP2762939B2 (ja) 超格子アバランシェフォトダイオード
JP2601231B2 (ja) 超格子アバランシェフォトダイオード
US5157473A (en) Avalanche photodiode having guard ring
KR900004180B1 (ko) 반도체 광검지기 및 그 제조방법
CA2007670C (en) Semiconductor photodetector device and method of manufacturing the same
US5057891A (en) Planar heterojunction avalanche photodiode
EP0304048B1 (en) A planar type heterostructure avalanche photodiode
KR100509355B1 (ko) 포토 다이오드의 구조 및 제조 방법
EP2073277A1 (en) Avalanche photodiode
CN118016752B (zh) 雪崩光电二极管的外延结构及其制作方法
JPH05102517A (ja) アバランシエフオトダイオードとその製造方法
JP3074574B2 (ja) 半導体受光素子の製造方法
KR970006610B1 (ko) 매립 메사 애벌런치 포토다이오드(Buried Mesa Avalanche Photodiode)구조 및 제조방법
KR0164094B1 (ko) 부분적으로 높은 전하층을 갖는 애벌랜치 포토다이오드 및 그의 제조방법
JP3055030B2 (ja) アバランシェ・フォトダイオードの製造方法
KR970006614B1 (ko) 광통신용 애벌렌치 포토다이오드 제조방법
JPH02253666A (ja) 半導体受光素子
JPS6244869B2 (enExample)
JPS61265876A (ja) プレ−ナ型ヘテロ接合半導体受光素子
HK1113520B (en) Planar avalanche photodiode
HK1113520A1 (zh) 平面型雪崩光电二极管

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20040414

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20040416

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20040416

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050325

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050325

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060217

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20060515

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20060519

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20070418

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20070423

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20070423

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070710

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070803

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100810

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100810

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110810

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110810

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120810

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130810

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees