DE69802739D1 - Avalanche-Photodiode und Methode zu deren Herstellung - Google Patents

Avalanche-Photodiode und Methode zu deren Herstellung

Info

Publication number
DE69802739D1
DE69802739D1 DE69802739T DE69802739T DE69802739D1 DE 69802739 D1 DE69802739 D1 DE 69802739D1 DE 69802739 T DE69802739 T DE 69802739T DE 69802739 T DE69802739 T DE 69802739T DE 69802739 D1 DE69802739 D1 DE 69802739D1
Authority
DE
Germany
Prior art keywords
making
avalanche photodiode
avalanche
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69802739T
Other languages
English (en)
Other versions
DE69802739T2 (de
Inventor
Ghulam Hasnain
James N Hollenhorst
Chung-Yi Su
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of DE69802739D1 publication Critical patent/DE69802739D1/de
Application granted granted Critical
Publication of DE69802739T2 publication Critical patent/DE69802739T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE69802739T 1997-04-01 1998-03-02 Avalanche-Photodiode und Methode zu deren Herstellung Expired - Lifetime DE69802739T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/831,843 US5866936A (en) 1997-04-01 1997-04-01 Mesa-structure avalanche photodiode having a buried epitaxial junction

Publications (2)

Publication Number Publication Date
DE69802739D1 true DE69802739D1 (de) 2002-01-17
DE69802739T2 DE69802739T2 (de) 2002-09-05

Family

ID=25260000

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802739T Expired - Lifetime DE69802739T2 (de) 1997-04-01 1998-03-02 Avalanche-Photodiode und Methode zu deren Herstellung

Country Status (4)

Country Link
US (1) US5866936A (de)
EP (1) EP0869561B1 (de)
JP (1) JP3996699B2 (de)
DE (1) DE69802739T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450454B2 (ja) * 1999-08-26 2010-04-14 Ｏｋｉセミコンダクタ株式会社 半導体受光素子
US20040000675A1 (en) * 2002-05-24 2004-01-01 Opnext Japan, Inc. Method for manufacturing avalanche photodiodes, avalanche photodiode, optical receiver module and optical receiving apparatus
JP4084958B2 (ja) 2002-05-24 2008-04-30 日本オプネクスト株式会社 半導体受光装置の製造方法
US6846172B2 (en) * 2002-06-07 2005-01-25 The Procter & Gamble Company Embossing apparatus
US6794631B2 (en) 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode
US6730979B2 (en) 2002-09-12 2004-05-04 The Boeing Company Recessed p-type region cap layer avalanche photodiode
JP4755854B2 (ja) 2005-06-02 2011-08-24 富士通株式会社 半導体受光装置及びその製造方法
US7863647B1 (en) * 2007-03-19 2011-01-04 Northrop Grumman Systems Corporation SiC avalanche photodiode with improved edge termination
JP4861887B2 (ja) * 2007-04-20 2012-01-25 日本オプネクスト株式会社 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法
US7834379B2 (en) * 2007-07-18 2010-11-16 Jds Uniphase Corporation Avalanche photodiode with edge breakdown suppression
US8030684B2 (en) * 2007-07-18 2011-10-04 Jds Uniphase Corporation Mesa-type photodetectors with lateral diffusion junctions
US7893464B2 (en) * 2008-03-28 2011-02-22 Jds Uniphase Corporation Semiconductor photodiode and method of manufacture thereof
US8008688B2 (en) * 2008-04-01 2011-08-30 Jds Uniphase Corporation Photodiode and method of fabrication
US8198650B2 (en) * 2008-12-08 2012-06-12 General Electric Company Semiconductor devices and systems
US8242432B2 (en) * 2009-10-23 2012-08-14 Kotura, Inc. System having light sensor with enhanced sensitivity including a multiplication layer for generating additional electrons
US8639065B2 (en) * 2010-06-18 2014-01-28 Kotura, Inc. System having avalanche effect light sensor with enhanced sensitivity
EP2987186B1 (de) 2013-04-19 2020-07-01 Lightspin Technologies, Inc. Integrierte lawinenphotodiodenarrays
US9377581B2 (en) 2013-05-08 2016-06-28 Mellanox Technologies Silicon Photonics Inc. Enhancing the performance of light sensors that receive light signals from an integrated waveguide
CN106356290A (zh) * 2016-10-28 2017-01-25 中国电子科技集团公司第四十四研究所 1064nm硅基雪崩探测器及其制作方法
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices
RU2721161C1 (ru) * 2019-11-19 2020-05-18 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ изготовления фотопреобразователя
CN111755555B (zh) * 2020-07-06 2022-01-07 武汉光谷量子技术有限公司 台面型二极管及其制作方法、阵列芯片的制作方法
TWI768831B (zh) * 2021-04-16 2022-06-21 聯亞光電工業股份有限公司 非擴散型光電二極體

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US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
JPS57111073A (en) * 1980-12-26 1982-07-10 Sumitomo Electric Ind Ltd Semiconductor light-receiving element
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
US4885622A (en) * 1984-03-23 1989-12-05 Oki Electric Industry Co., Ltd. Pin photodiode and method of fabrication of the same
US4719498A (en) * 1984-05-18 1988-01-12 Fujitsu Limited Optoelectronic integrated circuit
JPH0824199B2 (ja) * 1984-05-31 1996-03-06 富士通株式会社 半導体受光素子の製造方法
JPS6180875A (ja) * 1984-09-27 1986-04-24 Nec Corp 半導体装置
JPS61144076A (ja) * 1984-12-18 1986-07-01 Fujitsu Ltd 半導体受光素子
DE3678338D1 (de) * 1985-05-20 1991-05-02 Nec Corp Planare heterouebergang-avalanche-fotodiode.
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
GB8817886D0 (en) * 1988-07-27 1988-09-01 British Telecomm Avalanche photodiode structure
JPH0273676A (ja) * 1988-09-09 1990-03-13 Fujitsu Ltd アバランシフォトダイオード
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
JPH02248081A (ja) * 1989-03-22 1990-10-03 Toshiba Corp アバランシェフォトダイオード及びその製造方法
JPH02296379A (ja) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp アバランシェフォトダイオード
GB8913198D0 (en) * 1989-06-08 1989-07-26 British Telecomm Guard ring structure
JP2934294B2 (ja) * 1990-04-09 1999-08-16 日本電信電話株式会社 アバランシェフォトダイオード
JP2970815B2 (ja) * 1990-04-11 1999-11-02 株式会社東芝 半導体受光素子
US5045908A (en) * 1990-09-25 1991-09-03 Motorola, Inc. Vertically and laterally illuminated p-i-n photodiode
US5204539A (en) * 1991-01-28 1993-04-20 Nec Corporation Avalanche photodiode with hetero-periodical structure
JPH0521829A (ja) * 1991-07-12 1993-01-29 Hitachi Ltd 半導体装置
JP3254532B2 (ja) * 1992-08-06 2002-02-12 富士通株式会社 アバランシェホトダイオード
JP2639347B2 (ja) * 1994-06-23 1997-08-13 日本電気株式会社 半導体受光素子
JP2601231B2 (ja) * 1994-12-22 1997-04-16 日本電気株式会社 超格子アバランシェフォトダイオード
US5610416A (en) * 1995-02-16 1997-03-11 Hewlett-Packard Company Avalanche photodiode with epitaxially regrown guard rings

Also Published As

Publication number Publication date
JPH10308527A (ja) 1998-11-17
EP0869561A2 (de) 1998-10-07
DE69802739T2 (de) 2002-09-05
EP0869561A3 (de) 1999-09-01
US5866936A (en) 1999-02-02
EP0869561B1 (de) 2001-12-05
JP3996699B2 (ja) 2007-10-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES GENERAL IP ( SINGAPORE) PTE. LT