DE69825674D1 - Rückbeleuchteter Fotodetektor und Methode zu dessen Herstellung - Google Patents
Rückbeleuchteter Fotodetektor und Methode zu dessen HerstellungInfo
- Publication number
- DE69825674D1 DE69825674D1 DE69825674T DE69825674T DE69825674D1 DE 69825674 D1 DE69825674 D1 DE 69825674D1 DE 69825674 T DE69825674 T DE 69825674T DE 69825674 T DE69825674 T DE 69825674T DE 69825674 D1 DE69825674 D1 DE 69825674D1
- Authority
- DE
- Germany
- Prior art keywords
- backlit
- photodetector
- making
- backlit photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14799297 | 1997-06-05 | ||
JP14799297A JP3924352B2 (ja) | 1997-06-05 | 1997-06-05 | 裏面照射型受光デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69825674D1 true DE69825674D1 (de) | 2004-09-23 |
DE69825674T2 DE69825674T2 (de) | 2005-08-11 |
Family
ID=15442715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69825674T Expired - Lifetime DE69825674T2 (de) | 1997-06-05 | 1998-06-05 | Rückbeleuchteter Fotodetektor und Methode zu dessen Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6204506B1 (de) |
EP (1) | EP0883189B1 (de) |
JP (1) | JP3924352B2 (de) |
DE (1) | DE69825674T2 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6670258B2 (en) * | 2000-04-20 | 2003-12-30 | Digirad Corporation | Fabrication of low leakage-current backside illuminated photodiodes |
JP2003017676A (ja) * | 2001-04-27 | 2003-01-17 | Canon Inc | 放射線撮像装置およびそれを用いた放射線撮像システム |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
JP4482253B2 (ja) * | 2001-09-12 | 2010-06-16 | 浜松ホトニクス株式会社 | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP2003086827A (ja) * | 2001-09-12 | 2003-03-20 | Hamamatsu Photonics Kk | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
US7053381B2 (en) | 2001-12-06 | 2006-05-30 | General Electric Company | Dual para-xylylene layers for an X-ray detector |
US6720561B2 (en) * | 2001-12-06 | 2004-04-13 | General Electric Company | Direct CsI scintillator coating for improved digital X-ray detector assembly longevity |
KR100446624B1 (ko) | 2002-02-27 | 2004-09-04 | 삼성전자주식회사 | 양극접합 구조체 및 그 제조방법 |
JP4373695B2 (ja) * | 2003-04-16 | 2009-11-25 | 浜松ホトニクス株式会社 | 裏面照射型光検出装置の製造方法 |
US6762473B1 (en) * | 2003-06-25 | 2004-07-13 | Semicoa Semiconductors | Ultra thin back-illuminated photodiode array structures and fabrication methods |
DE10335662A1 (de) * | 2003-08-04 | 2005-03-10 | Siemens Ag | Detektormodul für einen Detektor zur Detektion ionisierender Strahlung sowie Detektor |
JP2005167090A (ja) | 2003-12-04 | 2005-06-23 | Hamamatsu Photonics Kk | 半導体受光素子及びその製造方法 |
US7425460B2 (en) * | 2004-09-17 | 2008-09-16 | California Institute Of Technology | Method for implementation of back-illuminated CMOS or CCD imagers |
US7749799B2 (en) | 2005-11-15 | 2010-07-06 | California Institute Of Technology | Back-illuminated imager and method for making electrical and optical connections to same |
US7586139B2 (en) | 2006-02-17 | 2009-09-08 | International Business Machines Corporation | Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor |
JP2009105291A (ja) * | 2007-10-25 | 2009-05-14 | Panasonic Corp | 接合構造体およびその製造方法 |
US7737390B2 (en) * | 2008-01-14 | 2010-06-15 | Tower Semiconductor, Ltd. | Horizontal row drivers for CMOS image sensor with tiling on three edges |
JP5301312B2 (ja) * | 2008-03-21 | 2013-09-25 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置の較正用基板及び描画方法 |
JP5185208B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオード及びフォトダイオードアレイ |
JP5185206B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP5185207B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5185205B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
KR101149433B1 (ko) * | 2009-08-28 | 2012-05-22 | 삼성모바일디스플레이주식회사 | 플렉서블 표시 장치 및 그 제조 방법 |
JP2011066093A (ja) * | 2009-09-15 | 2011-03-31 | Olympus Corp | 撮像ユニット |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
CN103081128B (zh) | 2010-06-18 | 2016-11-02 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
DE102011014162B4 (de) * | 2011-03-16 | 2019-12-05 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co | Verfahren zur Herstellung eines Trägers eines elektrostatischen Clamps |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
JP2014525091A (ja) | 2011-07-13 | 2014-09-25 | サイオニクス、インク. | 生体撮像装置および関連方法 |
US8748828B2 (en) * | 2011-09-21 | 2014-06-10 | Kla-Tencor Corporation | Interposer based imaging sensor for high-speed image acquisition and inspection systems |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
JP6169856B2 (ja) * | 2013-02-13 | 2017-07-26 | 浜松ホトニクス株式会社 | 裏面入射型エネルギー線検出素子 |
KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
JP5534081B2 (ja) * | 2013-05-20 | 2014-06-25 | ソニー株式会社 | 固体撮像素子の製造方法 |
WO2014209421A1 (en) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
JP2014199949A (ja) * | 2014-07-01 | 2014-10-23 | オリンパス株式会社 | 撮像ユニット |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53114361A (en) | 1977-03-16 | 1978-10-05 | Hitachi Ltd | Insulating separation substrate |
US4422091A (en) | 1981-01-19 | 1983-12-20 | Rockwell International Corporation | Backside illuminated imaging charge coupled device |
US4946716A (en) | 1985-05-31 | 1990-08-07 | Tektronix, Inc. | Method of thinning a silicon wafer using a reinforcing material |
JPH0194651A (ja) | 1987-10-06 | 1989-04-13 | Nec Corp | 半導体装置およびその製造方法 |
US5343064A (en) | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
US4923825A (en) | 1989-05-01 | 1990-05-08 | Tektronix, Inc. | Method of treating a semiconductor body |
JPH0693448A (ja) | 1992-09-11 | 1994-04-05 | Seiko Instr Inc | 硬質炭素膜被覆耐摩耗部材 |
JPH06268183A (ja) | 1993-03-15 | 1994-09-22 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3211995B2 (ja) | 1993-03-31 | 2001-09-25 | セイコーインスツルメンツ株式会社 | 半導体装置の製造方法 |
US5414276A (en) | 1993-10-18 | 1995-05-09 | The Regents Of The University Of California | Transistors using crystalline silicon devices on glass |
-
1997
- 1997-06-05 JP JP14799297A patent/JP3924352B2/ja not_active Expired - Fee Related
-
1998
- 1998-06-04 US US09/092,014 patent/US6204506B1/en not_active Expired - Lifetime
- 1998-06-05 DE DE69825674T patent/DE69825674T2/de not_active Expired - Lifetime
- 1998-06-05 EP EP98304465A patent/EP0883189B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3924352B2 (ja) | 2007-06-06 |
EP0883189B1 (de) | 2004-08-18 |
EP0883189A1 (de) | 1998-12-09 |
JPH10335624A (ja) | 1998-12-18 |
DE69825674T2 (de) | 2005-08-11 |
US6204506B1 (en) | 2001-03-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |