JP3980827B2 - 半導体集積回路装置および製造方法 - Google Patents

半導体集積回路装置および製造方法 Download PDF

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Publication number
JP3980827B2
JP3980827B2 JP2000364005A JP2000364005A JP3980827B2 JP 3980827 B2 JP3980827 B2 JP 3980827B2 JP 2000364005 A JP2000364005 A JP 2000364005A JP 2000364005 A JP2000364005 A JP 2000364005A JP 3980827 B2 JP3980827 B2 JP 3980827B2
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Japan
Prior art keywords
circuit
signal
data
memory
address
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JP2000364005A
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English (en)
Japanese (ja)
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JP2001325800A (ja
JP2001325800A5 (enExample
Inventor
正幸 佐藤
邦男 内山
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Renesas Technology Corp
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Renesas Technology Corp
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Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000364005A priority Critical patent/JP3980827B2/ja
Priority to TW090104894A priority patent/TW535279B/zh
Priority to KR1020010012207A priority patent/KR20010089236A/ko
Priority to US09/803,030 priority patent/US6601218B2/en
Priority to US09/822,429 priority patent/US6436741B2/en
Publication of JP2001325800A publication Critical patent/JP2001325800A/ja
Publication of JP2001325800A5 publication Critical patent/JP2001325800A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0401—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals in embedded memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/1206—Location of test circuitry on chip or wafer

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
JP2000364005A 2000-03-10 2000-11-30 半導体集積回路装置および製造方法 Expired - Fee Related JP3980827B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000364005A JP3980827B2 (ja) 2000-03-10 2000-11-30 半導体集積回路装置および製造方法
TW090104894A TW535279B (en) 2000-03-10 2001-03-02 Semiconductor integrated circuit and its manufacturing method
KR1020010012207A KR20010089236A (ko) 2000-03-10 2001-03-09 반도체 집적 회로 장치 및 제조 방법
US09/803,030 US6601218B2 (en) 2000-03-10 2001-03-12 Semiconductor integrated circuit device
US09/822,429 US6436741B2 (en) 2000-03-10 2001-04-02 Semiconductor integrated circuit device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-66335 2000-03-10
JP2000066335 2000-03-10
JP2000364005A JP3980827B2 (ja) 2000-03-10 2000-11-30 半導体集積回路装置および製造方法

Publications (3)

Publication Number Publication Date
JP2001325800A JP2001325800A (ja) 2001-11-22
JP2001325800A5 JP2001325800A5 (enExample) 2005-02-03
JP3980827B2 true JP3980827B2 (ja) 2007-09-26

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Family Applications (1)

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JP2000364005A Expired - Fee Related JP3980827B2 (ja) 2000-03-10 2000-11-30 半導体集積回路装置および製造方法

Country Status (4)

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US (2) US6601218B2 (enExample)
JP (1) JP3980827B2 (enExample)
KR (1) KR20010089236A (enExample)
TW (1) TW535279B (enExample)

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US20030149926A1 (en) * 2002-02-07 2003-08-07 Rajan Krishna B. Single scan chain in hierarchiacally bisted designs
JP3934434B2 (ja) * 2002-02-19 2007-06-20 富士通株式会社 回路の試験装置
JP2003303499A (ja) * 2002-04-08 2003-10-24 Mitsubishi Electric Corp 半導体集積回路
US6925406B2 (en) * 2002-06-21 2005-08-02 Teseda Corporation Scan test viewing and analysis tool
US6952623B2 (en) * 2002-07-02 2005-10-04 Texas Instruments, Inc. Permanent chip ID using FeRAM
JP2004047596A (ja) * 2002-07-10 2004-02-12 Renesas Technology Corp 半導体装置の製造方法
US6917215B2 (en) * 2002-08-30 2005-07-12 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit and memory test method
US7295028B2 (en) * 2002-08-30 2007-11-13 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit and memory test method
US7096386B2 (en) * 2002-09-19 2006-08-22 Oki Electric Industry Co., Ltd. Semiconductor integrated circuit having functional modules each including a built-in self testing circuit
US7007211B1 (en) 2002-10-04 2006-02-28 Cisco Technology, Inc. Testing self-repairing memory of a device
DE10259282B4 (de) * 2002-12-18 2005-05-19 Texas Instruments Deutschland Gmbh Batteriebetriebener Verbrauchszähler mit einem Mikro-Controller und Bausteinen zur Realisierung einer Zustandsmaschine
JP4167497B2 (ja) * 2003-01-17 2008-10-15 株式会社ルネサステクノロジ 半導体集積回路及びその試験を行う試験システム
CN1756962A (zh) * 2003-03-04 2006-04-05 皇家飞利浦电子股份有限公司 测试信号的自动检测和路由
US20040180561A1 (en) * 2003-03-12 2004-09-16 Nexcleon, Inc. Structures for testing circuits and methods for fabricating the structures
US6861864B2 (en) * 2003-04-16 2005-03-01 Lsi Logic Corporation Self-timed reliability and yield vehicle array
US7308627B2 (en) * 2003-04-16 2007-12-11 Lsi Corporation Self-timed reliability and yield vehicle with gated data and clock
JP4308637B2 (ja) * 2003-12-17 2009-08-05 株式会社日立製作所 半導体試験装置
TWI369504B (en) * 2004-07-27 2012-08-01 Lsi Corp Methods of locating a fault within an array of integrated circuits, methods of testing an array of interconnect modules, and speed fault test vehicles for locating a fault within an array of interconnect modules
US7284213B2 (en) * 2005-04-08 2007-10-16 Lsi Corporation Defect analysis using a yield vehicle
US7370257B2 (en) * 2005-04-08 2008-05-06 Lsi Logic Corporation Test vehicle data analysis
JP5032996B2 (ja) * 2005-11-28 2012-09-26 太陽誘電株式会社 半導体装置
US7539967B1 (en) 2006-05-05 2009-05-26 Altera Corporation Self-configuring components on a device
US7526694B1 (en) * 2006-08-03 2009-04-28 Xilinx, Inc. Integrated circuit internal test circuit and method of testing therewith
JP2008082976A (ja) * 2006-09-28 2008-04-10 Fujitsu Ltd Ｆｂｍ生成装置、ｆｂｍ生成方法
DE102007028802B4 (de) * 2007-06-22 2010-04-08 Qimonda Ag Integrierte Logikschaltung und Verfahren zum Herstellen einer integrierten Logikschaltung
US9110142B2 (en) * 2011-09-30 2015-08-18 Freescale Semiconductor, Inc. Methods and apparatus for testing multiple-IC devices
US9998114B2 (en) * 2013-10-31 2018-06-12 Honeywell International Inc. Matrix ferrite driver circuit
JP6478562B2 (ja) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
US9385054B2 (en) * 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
JP6393590B2 (ja) * 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6444723B2 (ja) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
JP2015165226A (ja) * 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
DE112015000705T5 (de) * 2014-02-07 2016-10-27 Semiconductor Energy Laboratory Co., Ltd. Vorrichtung
JP6545970B2 (ja) 2014-02-07 2019-07-17 株式会社半導体エネルギー研究所 装置
US9871511B2 (en) 2014-07-01 2018-01-16 Honeywell International Inc. Protection switching for matrix of ferrite modules with redundant control
KR20170061602A (ko) * 2015-11-26 2017-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
CN106653098B (zh) * 2017-01-04 2020-06-16 盛科网络（苏州）有限公司 针对逻辑和cpu均可读写存储器的测试方法

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Also Published As

Publication number Publication date
KR20010089236A (ko) 2001-09-29
US6601218B2 (en) 2003-07-29
TW535279B (en) 2003-06-01
JP2001325800A (ja) 2001-11-22
US6436741B2 (en) 2002-08-20
US20010021558A1 (en) 2001-09-13
US20010022743A1 (en) 2001-09-20

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