JP3927788B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3927788B2
JP3927788B2 JP2001336161A JP2001336161A JP3927788B2 JP 3927788 B2 JP3927788 B2 JP 3927788B2 JP 2001336161 A JP2001336161 A JP 2001336161A JP 2001336161 A JP2001336161 A JP 2001336161A JP 3927788 B2 JP3927788 B2 JP 3927788B2
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JP
Japan
Prior art keywords
circuit
power supply
output
potential
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001336161A
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English (en)
Japanese (ja)
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JP2003143000A (ja
JP2003143000A5 (enExample
Inventor
毅 梶本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001336161A priority Critical patent/JP3927788B2/ja
Priority to US10/134,428 priority patent/US6621329B2/en
Priority to DE10223763A priority patent/DE10223763B4/de
Priority to KR1020020038150A priority patent/KR20030038329A/ko
Publication of JP2003143000A publication Critical patent/JP2003143000A/ja
Publication of JP2003143000A5 publication Critical patent/JP2003143000A5/ja
Application granted granted Critical
Publication of JP3927788B2 publication Critical patent/JP3927788B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
JP2001336161A 2001-11-01 2001-11-01 半導体装置 Expired - Fee Related JP3927788B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001336161A JP3927788B2 (ja) 2001-11-01 2001-11-01 半導体装置
US10/134,428 US6621329B2 (en) 2001-11-01 2002-04-30 Semiconductor device
DE10223763A DE10223763B4 (de) 2001-11-01 2002-05-28 Halbleitervorrichtung
KR1020020038150A KR20030038329A (ko) 2001-11-01 2002-07-03 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001336161A JP3927788B2 (ja) 2001-11-01 2001-11-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2003143000A JP2003143000A (ja) 2003-05-16
JP2003143000A5 JP2003143000A5 (enExample) 2005-06-30
JP3927788B2 true JP3927788B2 (ja) 2007-06-13

Family

ID=19151029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001336161A Expired - Fee Related JP3927788B2 (ja) 2001-11-01 2001-11-01 半導体装置

Country Status (4)

Country Link
US (1) US6621329B2 (enExample)
JP (1) JP3927788B2 (enExample)
KR (1) KR20030038329A (enExample)
DE (1) DE10223763B4 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8531898B2 (en) 2010-04-02 2013-09-10 Samsung Electronics Co., Ltd. On-die termination circuit, data output buffer and semiconductor memory device
DE112019005327T5 (de) 2018-10-24 2021-07-15 Sony Semiconductor Solutions Corporation Halbleiterschaltung und halbleitersystem

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007030569B4 (de) 2007-07-02 2012-11-08 Austriamicrosystems Ag Schaltungsanordnung und Verfahren zum Auswerten eines Datensignals
DE102008053536B4 (de) 2008-10-28 2011-12-01 Atmel Automotive Gmbh Schaltung, Verwendung und Verfahren zum Betrieb einer Schaltung
JP2011035271A (ja) * 2009-08-04 2011-02-17 Renesas Electronics Corp 電圧変動削減回路および半導体装置
JP6108808B2 (ja) 2011-12-23 2017-04-05 株式会社半導体エネルギー研究所 基準電位生成回路
KR101939234B1 (ko) 2012-07-23 2019-01-16 삼성전자 주식회사 메모리 장치, 메모리 시스템 및 상기 메모리 장치의 독출 전압의 제어 방법
US9374004B2 (en) * 2013-06-28 2016-06-21 Intel Corporation I/O driver transmit swing control
US9749701B2 (en) * 2014-04-17 2017-08-29 Microsoft Technology Licensing, Llc Intelligent routing of notifications to grouped devices
JP6466761B2 (ja) 2015-03-31 2019-02-06 ラピスセミコンダクタ株式会社 半導体装置、及び電源供給方法
KR20170016582A (ko) * 2015-08-04 2017-02-14 에스케이하이닉스 주식회사 복수의 전원을 사용하는 메모리 장치 및 이를 포함하는 시스템
US11978701B2 (en) * 2016-08-09 2024-05-07 Skyworks Solutions, Inc. Programmable fuse with single fuse pad and control methods thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59160219A (ja) 1983-03-02 1984-09-10 Sharp Corp 定電圧電源回路
JPH0385562A (ja) 1989-08-30 1991-04-10 Fujitsu Ltd 像記録装置の制御方法
KR940003406B1 (ko) * 1991-06-12 1994-04-21 삼성전자 주식회사 내부 전원전압 발생회로
KR930008886B1 (ko) * 1991-08-19 1993-09-16 삼성전자 주식회사 전기적으로 프로그램 할 수 있는 내부전원 발생회로
JPH05102831A (ja) * 1991-10-09 1993-04-23 Mitsubishi Electric Corp 半導体集積回路の出力回路
JPH05314769A (ja) * 1992-05-13 1993-11-26 Mitsubishi Electric Corp 半導体集積回路装置
JP3085562B2 (ja) 1992-10-12 2000-09-11 三菱電機株式会社 基準電圧発生回路および内部降圧回路
DE4334918C2 (de) * 1992-10-15 2000-02-03 Mitsubishi Electric Corp Absenkkonverter zum Absenken einer externen Versorgungsspannung mit Kompensation herstellungsbedingter Abweichungen, seine Verwendung sowie zugehöriges Betriebsverfahren
JP2500422B2 (ja) * 1993-02-10 1996-05-29 日本電気株式会社 半導体ｉｃチップ内蔵用の降圧回路
JPH07105682A (ja) * 1993-10-06 1995-04-21 Nec Corp ダイナミックメモリ装置
US5594373A (en) * 1994-12-20 1997-01-14 Sgs-Thomson Microelectronics, Inc. Output driver circuitry with selective limited output high voltage
JPH08251010A (ja) * 1995-03-10 1996-09-27 Mitsubishi Electric Corp 半導体装置
JP3234153B2 (ja) * 1996-04-19 2001-12-04 株式会社東芝 半導体装置
US5933026A (en) * 1997-04-11 1999-08-03 Intel Corporation Self-configuring interface architecture on flash memories
JP3202196B2 (ja) 1998-08-25 2001-08-27 沖電気工業株式会社 出力回路と入力回路
KR100317325B1 (ko) * 1999-03-10 2001-12-22 김영환 출력 구동회로

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8531898B2 (en) 2010-04-02 2013-09-10 Samsung Electronics Co., Ltd. On-die termination circuit, data output buffer and semiconductor memory device
DE112019005327T5 (de) 2018-10-24 2021-07-15 Sony Semiconductor Solutions Corporation Halbleiterschaltung und halbleitersystem
US11411561B2 (en) 2018-10-24 2022-08-09 Sony Semiconductor Solutions Corporation Semiconductor circuit and semiconductor system

Also Published As

Publication number Publication date
JP2003143000A (ja) 2003-05-16
KR20030038329A (ko) 2003-05-16
US20030080717A1 (en) 2003-05-01
US6621329B2 (en) 2003-09-16
DE10223763B4 (de) 2009-07-23
DE10223763A1 (de) 2003-05-28

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