KR20030038329A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20030038329A
KR20030038329A KR1020020038150A KR20020038150A KR20030038329A KR 20030038329 A KR20030038329 A KR 20030038329A KR 1020020038150 A KR1020020038150 A KR 1020020038150A KR 20020038150 A KR20020038150 A KR 20020038150A KR 20030038329 A KR20030038329 A KR 20030038329A
Authority
KR
South Korea
Prior art keywords
circuit
output
power supply
voltage
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020038150A
Other languages
English (en)
Korean (ko)
Inventor
가지모또다께시
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20030038329A publication Critical patent/KR20030038329A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
KR1020020038150A 2001-11-01 2002-07-03 반도체 장치 Ceased KR20030038329A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001336161A JP3927788B2 (ja) 2001-11-01 2001-11-01 半導体装置
JPJP-P-2001-00336161 2001-11-01

Publications (1)

Publication Number Publication Date
KR20030038329A true KR20030038329A (ko) 2003-05-16

Family

ID=19151029

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020038150A Ceased KR20030038329A (ko) 2001-11-01 2002-07-03 반도체 장치

Country Status (4)

Country Link
US (1) US6621329B2 (enExample)
JP (1) JP3927788B2 (enExample)
KR (1) KR20030038329A (enExample)
DE (1) DE10223763B4 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130073842A (ko) * 2011-12-23 2013-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기준 전위 생성 회로

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007030569B4 (de) * 2007-07-02 2012-11-08 Austriamicrosystems Ag Schaltungsanordnung und Verfahren zum Auswerten eines Datensignals
DE102008053536B4 (de) * 2008-10-28 2011-12-01 Atmel Automotive Gmbh Schaltung, Verwendung und Verfahren zum Betrieb einer Schaltung
JP2011035271A (ja) * 2009-08-04 2011-02-17 Renesas Electronics Corp 電圧変動削減回路および半導体装置
US8531898B2 (en) 2010-04-02 2013-09-10 Samsung Electronics Co., Ltd. On-die termination circuit, data output buffer and semiconductor memory device
KR101939234B1 (ko) 2012-07-23 2019-01-16 삼성전자 주식회사 메모리 장치, 메모리 시스템 및 상기 메모리 장치의 독출 전압의 제어 방법
US9374004B2 (en) * 2013-06-28 2016-06-21 Intel Corporation I/O driver transmit swing control
US9749701B2 (en) * 2014-04-17 2017-08-29 Microsoft Technology Licensing, Llc Intelligent routing of notifications to grouped devices
JP6466761B2 (ja) 2015-03-31 2019-02-06 ラピスセミコンダクタ株式会社 半導体装置、及び電源供給方法
KR20170016582A (ko) * 2015-08-04 2017-02-14 에스케이하이닉스 주식회사 복수의 전원을 사용하는 메모리 장치 및 이를 포함하는 시스템
US11978701B2 (en) * 2016-08-09 2024-05-07 Skyworks Solutions, Inc. Programmable fuse with single fuse pad and control methods thereof
US11411561B2 (en) 2018-10-24 2022-08-09 Sony Semiconductor Solutions Corporation Semiconductor circuit and semiconductor system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05314769A (ja) * 1992-05-13 1993-11-26 Mitsubishi Electric Corp 半導体集積回路装置
US5396113A (en) * 1991-08-19 1995-03-07 Samsung Electronics Co., Ltd. Electrically programmable internal power voltage generating circuit
US5457421A (en) * 1993-02-10 1995-10-10 Nec Corporation Voltage stepdown circuit including a voltage divider
JPH09289288A (ja) * 1996-04-19 1997-11-04 Toshiba Corp 半導体装置
KR20000059994A (ko) * 1999-03-10 2000-10-16 김영환 출력 구동회로

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59160219A (ja) 1983-03-02 1984-09-10 Sharp Corp 定電圧電源回路
JPH0385562A (ja) 1989-08-30 1991-04-10 Fujitsu Ltd 像記録装置の制御方法
KR940003406B1 (ko) * 1991-06-12 1994-04-21 삼성전자 주식회사 내부 전원전압 발생회로
JPH05102831A (ja) * 1991-10-09 1993-04-23 Mitsubishi Electric Corp 半導体集積回路の出力回路
JP3085562B2 (ja) 1992-10-12 2000-09-11 三菱電機株式会社 基準電圧発生回路および内部降圧回路
DE4334918C2 (de) * 1992-10-15 2000-02-03 Mitsubishi Electric Corp Absenkkonverter zum Absenken einer externen Versorgungsspannung mit Kompensation herstellungsbedingter Abweichungen, seine Verwendung sowie zugehöriges Betriebsverfahren
JPH07105682A (ja) * 1993-10-06 1995-04-21 Nec Corp ダイナミックメモリ装置
US5594373A (en) * 1994-12-20 1997-01-14 Sgs-Thomson Microelectronics, Inc. Output driver circuitry with selective limited output high voltage
JPH08251010A (ja) * 1995-03-10 1996-09-27 Mitsubishi Electric Corp 半導体装置
US5933026A (en) * 1997-04-11 1999-08-03 Intel Corporation Self-configuring interface architecture on flash memories
JP3202196B2 (ja) 1998-08-25 2001-08-27 沖電気工業株式会社 出力回路と入力回路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396113A (en) * 1991-08-19 1995-03-07 Samsung Electronics Co., Ltd. Electrically programmable internal power voltage generating circuit
JPH05314769A (ja) * 1992-05-13 1993-11-26 Mitsubishi Electric Corp 半導体集積回路装置
US5457421A (en) * 1993-02-10 1995-10-10 Nec Corporation Voltage stepdown circuit including a voltage divider
JPH09289288A (ja) * 1996-04-19 1997-11-04 Toshiba Corp 半導体装置
KR20000059994A (ko) * 1999-03-10 2000-10-16 김영환 출력 구동회로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130073842A (ko) * 2011-12-23 2013-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기준 전위 생성 회로

Also Published As

Publication number Publication date
JP2003143000A (ja) 2003-05-16
US20030080717A1 (en) 2003-05-01
DE10223763B4 (de) 2009-07-23
DE10223763A1 (de) 2003-05-28
US6621329B2 (en) 2003-09-16
JP3927788B2 (ja) 2007-06-13

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