JP3869682B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3869682B2
JP3869682B2 JP2001176465A JP2001176465A JP3869682B2 JP 3869682 B2 JP3869682 B2 JP 3869682B2 JP 2001176465 A JP2001176465 A JP 2001176465A JP 2001176465 A JP2001176465 A JP 2001176465A JP 3869682 B2 JP3869682 B2 JP 3869682B2
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JP
Japan
Prior art keywords
memory cell
memory
bipolar transistor
pattern
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001176465A
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English (en)
Japanese (ja)
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JP2002367365A5 (enExample
JP2002367365A (ja
Inventor
健 阪田
悟 半澤
秀行 松岡
克朗 渡辺
顕知 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001176465A priority Critical patent/JP3869682B2/ja
Priority to US10/081,537 priority patent/US6573586B2/en
Priority to KR1020020010415A priority patent/KR20030009070A/ko
Publication of JP2002367365A publication Critical patent/JP2002367365A/ja
Priority to US10/412,423 priority patent/US6771535B2/en
Priority to US10/863,748 priority patent/US6903966B2/en
Publication of JP2002367365A5 publication Critical patent/JP2002367365A5/ja
Application granted granted Critical
Publication of JP3869682B2 publication Critical patent/JP3869682B2/ja
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
JP2001176465A 2001-06-12 2001-06-12 半導体装置 Expired - Fee Related JP3869682B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001176465A JP3869682B2 (ja) 2001-06-12 2001-06-12 半導体装置
US10/081,537 US6573586B2 (en) 2001-06-12 2002-02-25 Semiconductor device
KR1020020010415A KR20030009070A (ko) 2001-06-12 2002-02-27 반도체 장치
US10/412,423 US6771535B2 (en) 2001-06-12 2003-04-14 Semiconductor device
US10/863,748 US6903966B2 (en) 2001-06-12 2004-06-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001176465A JP3869682B2 (ja) 2001-06-12 2001-06-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2002367365A JP2002367365A (ja) 2002-12-20
JP2002367365A5 JP2002367365A5 (enExample) 2005-07-21
JP3869682B2 true JP3869682B2 (ja) 2007-01-17

Family

ID=19017444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001176465A Expired - Fee Related JP3869682B2 (ja) 2001-06-12 2001-06-12 半導体装置

Country Status (3)

Country Link
US (3) US6573586B2 (enExample)
JP (1) JP3869682B2 (enExample)
KR (1) KR20030009070A (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451660B1 (ko) * 2001-12-05 2004-10-08 대한민국(서울대학교 총장) 전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
JP4539007B2 (ja) * 2002-05-09 2010-09-08 日本電気株式会社 半導体記憶装置
EP1408550B1 (en) * 2002-10-08 2006-12-27 STMicroelectronics S.r.l. Array of cells including a selection bipolar transistor and fabrication method thereof
EP1408549B1 (en) * 2002-10-08 2007-03-07 STMicroelectronics S.r.l. Process for manufacturing an array of cells including selection bipolar junction transistors and associated array of cells
KR100493161B1 (ko) * 2002-11-07 2005-06-02 삼성전자주식회사 Ｍｒａｍ과 그 제조 및 구동방법
JP3866649B2 (ja) * 2002-11-28 2007-01-10 株式会社東芝 磁気ランダムアクセスメモリ
JP4664573B2 (ja) * 2002-11-28 2011-04-06 ルネサスエレクトロニクス株式会社 磁気半導体記憶装置
US6711053B1 (en) * 2003-01-29 2004-03-23 Taiwan Semiconductor Manufacturing Company Scaleable high performance magnetic random access memory cell and array
TW589753B (en) * 2003-06-03 2004-06-01 Winbond Electronics Corp Resistance random access memory and method for fabricating the same
JP4142993B2 (ja) * 2003-07-23 2008-09-03 株式会社東芝 磁気メモリ装置の製造方法
JP2005116658A (ja) 2003-10-06 2005-04-28 Fujitsu Ltd 磁気抵抗メモリ装置
US6933204B2 (en) * 2003-10-13 2005-08-23 International Business Machines Corporation Method for improved alignment of magnetic tunnel junction elements
KR100782944B1 (ko) 2003-12-30 2007-12-07 심정칠 저전력용 자기 메모리소자
US7009903B2 (en) * 2004-05-27 2006-03-07 Hewlett-Packard Development Company, L.P. Sense amplifying magnetic tunnel device
KR100669363B1 (ko) * 2004-10-26 2007-01-16 삼성전자주식회사 메모리 장치의 읽기 방법
JP2006156608A (ja) 2004-11-29 2006-06-15 Hitachi Ltd 磁気メモリおよびその製造方法
US7486550B2 (en) * 2006-06-06 2009-02-03 Micron Technology, Inc. Semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell
JP5119436B2 (ja) * 2006-12-28 2013-01-16 国立大学法人大阪大学 不揮発性メモリセルおよびその製造方法、抵抗可変型不揮発性メモリ装置、並びに不揮発性メモリセルの設計方法
US20090121259A1 (en) * 2007-11-13 2009-05-14 Iben Icko E T Paired magnetic tunnel junction to a semiconductor field-effect transistor
JP2009135291A (ja) 2007-11-30 2009-06-18 Sanyo Electric Co Ltd 半導体メモリ装置
JP2009135290A (ja) * 2007-11-30 2009-06-18 Sanyo Electric Co Ltd 半導体メモリ装置
KR100961723B1 (ko) * 2008-02-18 2010-06-10 이화여자대학교 산학협력단 스핀 토크 변환을 이용한 자기터널접합 소자를 사용한ｘｏｒ 논리 연산장치
US8208290B2 (en) * 2009-08-26 2012-06-26 Qualcomm Incorporated System and method to manufacture magnetic random access memory
JP2012069671A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
US9246100B2 (en) 2013-07-24 2016-01-26 Micron Technology, Inc. Memory cell array structures and methods of forming the same
US9813049B2 (en) 2015-08-12 2017-11-07 Qualcomm Incorporated Comparator including a magnetic tunnel junction (MTJ) device and a transistor
KR102406722B1 (ko) * 2015-09-25 2022-06-09 삼성전자주식회사 자기 메모리 장치 및 그 제조 방법
US11411049B2 (en) * 2020-12-21 2022-08-09 International Business Machines Corporation Symmetric read operation resistive random-access memory cell with bipolar junction selector

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
DE10020128A1 (de) * 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6418046B1 (en) * 2001-01-30 2002-07-09 Motorola, Inc. MRAM architecture and system
JP4637388B2 (ja) * 2001-03-23 2011-02-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2002298572A (ja) * 2001-03-28 2002-10-11 Toshiba Corp 半導体記憶装置
US6490217B1 (en) * 2001-05-23 2002-12-03 International Business Machines Corporation Select line architecture for magnetic random access memories

Also Published As

Publication number Publication date
US20020195630A1 (en) 2002-12-26
US6903966B2 (en) 2005-06-07
US6771535B2 (en) 2004-08-03
KR20030009070A (ko) 2003-01-29
JP2002367365A (ja) 2002-12-20
US6573586B2 (en) 2003-06-03
US20040223368A1 (en) 2004-11-11
US20030173628A1 (en) 2003-09-18

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