JP3822055B2 - 高周波型プラズマ強化化学気相堆積反応装置、及びそれを実施する方法 - Google Patents

高周波型プラズマ強化化学気相堆積反応装置、及びそれを実施する方法 Download PDF

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Publication number
JP3822055B2
JP3822055B2 JP2000532862A JP2000532862A JP3822055B2 JP 3822055 B2 JP3822055 B2 JP 3822055B2 JP 2000532862 A JP2000532862 A JP 2000532862A JP 2000532862 A JP2000532862 A JP 2000532862A JP 3822055 B2 JP3822055 B2 JP 3822055B2
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Prior art keywords
reactor
frequency
frequency power
electrode
vapor deposition
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Expired - Fee Related
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Japanese (ja)
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JP2002504748A (ja
Inventor
スジット シャラン，
ガーテ， エス． サンデュ，
ポール スミス，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Details Of Rigid Or Semi-Rigid Containers (AREA)
JP2000532862A 1998-02-19 1999-02-16 高周波型プラズマ強化化学気相堆積反応装置、及びそれを実施する方法 Expired - Fee Related JP3822055B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/026,566 1998-02-19
US09/026,566 US6112697A (en) 1998-02-19 1998-02-19 RF powered plasma enhanced chemical vapor deposition reactor and methods
PCT/US1999/003229 WO1999043017A1 (en) 1998-02-19 1999-02-16 Rf powered plasma enhanced chemical vapor deposition reactor and methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003147766A Division JP4217883B2 (ja) 1998-02-19 2003-05-26 高周波型プラズマ強化化学気相堆積反応装置、及びそれを用いる方法

Publications (2)

Publication Number Publication Date
JP2002504748A JP2002504748A (ja) 2002-02-12
JP3822055B2 true JP3822055B2 (ja) 2006-09-13

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JP2000532862A Expired - Fee Related JP3822055B2 (ja) 1998-02-19 1999-02-16 高周波型プラズマ強化化学気相堆積反応装置、及びそれを実施する方法
JP2003147766A Expired - Fee Related JP4217883B2 (ja) 1998-02-19 2003-05-26 高周波型プラズマ強化化学気相堆積反応装置、及びそれを用いる方法

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JP2003147766A Expired - Fee Related JP4217883B2 (ja) 1998-02-19 2003-05-26 高周波型プラズマ強化化学気相堆積反応装置、及びそれを用いる方法

Country Status (9)

Country Link
US (2) US6112697A (enExample)
EP (1) EP1057207B1 (enExample)
JP (2) JP3822055B2 (enExample)
KR (1) KR100388529B1 (enExample)
AT (1) ATE269586T1 (enExample)
AU (1) AU3293999A (enExample)
DE (1) DE69918063T2 (enExample)
TW (1) TW523830B (enExample)
WO (1) WO1999043017A1 (enExample)

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Also Published As

Publication number Publication date
ATE269586T1 (de) 2004-07-15
KR20010040831A (ko) 2001-05-15
US6227141B1 (en) 2001-05-08
DE69918063D1 (de) 2004-07-22
US6112697A (en) 2000-09-05
JP2004006885A (ja) 2004-01-08
EP1057207A1 (en) 2000-12-06
KR100388529B1 (ko) 2003-06-25
WO1999043017A1 (en) 1999-08-26
JP4217883B2 (ja) 2009-02-04
DE69918063T2 (de) 2005-06-30
AU3293999A (en) 1999-09-06
EP1057207B1 (en) 2004-06-16
JP2002504748A (ja) 2002-02-12
TW523830B (en) 2003-03-11

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