KR100388529B1 - Rf 전력 공급형 플라즈마 강화 화학 증기 증착 반응기 및 그 방법 - Google Patents

Rf 전력 공급형 플라즈마 강화 화학 증기 증착 반응기 및 그 방법 Download PDF

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Publication number
KR100388529B1
KR100388529B1 KR10-2000-7008726A KR20007008726A KR100388529B1 KR 100388529 B1 KR100388529 B1 KR 100388529B1 KR 20007008726 A KR20007008726 A KR 20007008726A KR 100388529 B1 KR100388529 B1 KR 100388529B1
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South Korea
Prior art keywords
reactor
frequency
electrode
power
chamber
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20010040831A (ko
Inventor
수히트 사란
거테히에스. 산두
폴 스미스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
미크론 테크놀로지,인코포레이티드
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Publication of KR20010040831A publication Critical patent/KR20010040831A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Details Of Rigid Or Semi-Rigid Containers (AREA)
KR10-2000-7008726A 1998-02-19 1999-02-16 Rf 전력 공급형 플라즈마 강화 화학 증기 증착 반응기 및 그 방법 Expired - Fee Related KR100388529B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/026,566 1998-02-19
US09/026,566 US6112697A (en) 1998-02-19 1998-02-19 RF powered plasma enhanced chemical vapor deposition reactor and methods

Publications (2)

Publication Number Publication Date
KR20010040831A KR20010040831A (ko) 2001-05-15
KR100388529B1 true KR100388529B1 (ko) 2003-06-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-7008726A Expired - Fee Related KR100388529B1 (ko) 1998-02-19 1999-02-16 Rf 전력 공급형 플라즈마 강화 화학 증기 증착 반응기 및 그 방법

Country Status (9)

Country Link
US (2) US6112697A (enExample)
EP (1) EP1057207B1 (enExample)
JP (2) JP3822055B2 (enExample)
KR (1) KR100388529B1 (enExample)
AT (1) ATE269586T1 (enExample)
AU (1) AU3293999A (enExample)
DE (1) DE69918063T2 (enExample)
TW (1) TW523830B (enExample)
WO (1) WO1999043017A1 (enExample)

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US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
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JP5730521B2 (ja) 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
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Also Published As

Publication number Publication date
ATE269586T1 (de) 2004-07-15
KR20010040831A (ko) 2001-05-15
US6227141B1 (en) 2001-05-08
DE69918063D1 (de) 2004-07-22
US6112697A (en) 2000-09-05
JP2004006885A (ja) 2004-01-08
EP1057207A1 (en) 2000-12-06
JP3822055B2 (ja) 2006-09-13
WO1999043017A1 (en) 1999-08-26
JP4217883B2 (ja) 2009-02-04
DE69918063T2 (de) 2005-06-30
AU3293999A (en) 1999-09-06
EP1057207B1 (en) 2004-06-16
JP2002504748A (ja) 2002-02-12
TW523830B (en) 2003-03-11

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