ATE269586T1 - Reaktor zur radiofrequenz betriebenen plasma- aktivierten chemischen dampfabscheidung und verfahren - Google Patents

Reaktor zur radiofrequenz betriebenen plasma- aktivierten chemischen dampfabscheidung und verfahren

Info

Publication number
ATE269586T1
ATE269586T1 AT99934367T AT99934367T ATE269586T1 AT E269586 T1 ATE269586 T1 AT E269586T1 AT 99934367 T AT99934367 T AT 99934367T AT 99934367 T AT99934367 T AT 99934367T AT E269586 T1 ATE269586 T1 AT E269586T1
Authority
AT
Austria
Prior art keywords
frequency
electrode
reactor
chemical vapor
power
Prior art date
Application number
AT99934367T
Other languages
German (de)
English (en)
Inventor
Sujit Sharan
Gurtej S Sandhu
Paul Smith
Original Assignee
Micron Technology Inc
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Applied Materials Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE269586T1 publication Critical patent/ATE269586T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Details Of Rigid Or Semi-Rigid Containers (AREA)
AT99934367T 1998-02-19 1999-02-16 Reaktor zur radiofrequenz betriebenen plasma- aktivierten chemischen dampfabscheidung und verfahren ATE269586T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/026,566 US6112697A (en) 1998-02-19 1998-02-19 RF powered plasma enhanced chemical vapor deposition reactor and methods
PCT/US1999/003229 WO1999043017A1 (en) 1998-02-19 1999-02-16 Rf powered plasma enhanced chemical vapor deposition reactor and methods

Publications (1)

Publication Number Publication Date
ATE269586T1 true ATE269586T1 (de) 2004-07-15

Family

ID=21832548

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99934367T ATE269586T1 (de) 1998-02-19 1999-02-16 Reaktor zur radiofrequenz betriebenen plasma- aktivierten chemischen dampfabscheidung und verfahren

Country Status (9)

Country Link
US (2) US6112697A (enExample)
EP (1) EP1057207B1 (enExample)
JP (2) JP3822055B2 (enExample)
KR (1) KR100388529B1 (enExample)
AT (1) ATE269586T1 (enExample)
AU (1) AU3293999A (enExample)
DE (1) DE69918063T2 (enExample)
TW (1) TW523830B (enExample)
WO (1) WO1999043017A1 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2806324B1 (fr) * 2000-03-15 2002-09-27 Air Liquide Procede et dispositif de mise en oeuvre d'une reaction chimique et procede de traitement de surface utilisant de tels procede et dispositif
US6857387B1 (en) 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
US6562684B1 (en) 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US7139083B2 (en) 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
JP4877884B2 (ja) * 2001-01-25 2012-02-15 東京エレクトロン株式会社 プラズマ処理装置
US6800210B2 (en) * 2001-05-22 2004-10-05 Reflectivity, Inc. Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US6838012B2 (en) * 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
US20040188240A1 (en) * 2003-03-28 2004-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Process for in-situ nitridation of salicides
GB0309932D0 (en) * 2003-04-30 2003-06-04 Boc Group Plc Apparatus and method for forming a plasma
US7431857B2 (en) * 2003-08-15 2008-10-07 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source
US20050118541A1 (en) * 2003-11-28 2005-06-02 Applied Materials, Inc. Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes
US7829471B2 (en) 2005-07-29 2010-11-09 Applied Materials, Inc. Cluster tool and method for process integration in manufacturing of a photomask
US20070031609A1 (en) * 2005-07-29 2007-02-08 Ajay Kumar Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
US7375038B2 (en) 2005-09-28 2008-05-20 Applied Materials, Inc. Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication
US7695633B2 (en) * 2005-10-18 2010-04-13 Applied Materials, Inc. Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
US20070245960A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density
US20070246163A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and inductive plasma sources
US20070246162A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency
US20070245961A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation
US7780864B2 (en) 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
US7727413B2 (en) * 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
US20070246161A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency
US20070246443A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US20090104541A1 (en) * 2007-10-23 2009-04-23 Eui Kyoon Kim Plasma surface treatment to prevent pattern collapse in immersion lithography
US20090188625A1 (en) * 2008-01-28 2009-07-30 Carducci James D Etching chamber having flow equalizer and lower liner
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US9034142B2 (en) * 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
KR101415552B1 (ko) * 2009-12-21 2014-07-07 주식회사 미코 접지구조물, 이를 구비하는 히터 및 화학기상 증착장치
JP5730521B2 (ja) 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
US8618446B2 (en) 2011-06-30 2013-12-31 Applied Materials, Inc. Substrate support with substrate heater and symmetric RF return
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
TWI728197B (zh) 2016-10-24 2021-05-21 美商克萊譚克公司 整合至一計量及/或檢測工具中之製程模組
US20200098562A1 (en) * 2018-09-26 2020-03-26 Lam Research Corporation Dual frequency silane-based silicon dioxide deposition to minimize film instability
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
CN110528018A (zh) * 2019-09-25 2019-12-03 宜兴市翔翮环保设备有限公司 一种二氧化氯消毒液制备装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
US5230931A (en) * 1987-08-10 1993-07-27 Semiconductor Energy Laboratory Co., Ltd. Plasma-assisted cvd of carbonaceous films by using a bias voltage
US4887005A (en) 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
JP2629871B2 (ja) 1988-08-29 1997-07-16 スズキ株式会社 車両用変速機
JPH02213480A (ja) * 1989-02-14 1990-08-24 Nippon Light Metal Co Ltd 高周波プラズマ発生用アルミニウム電極
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
JP3016821B2 (ja) * 1990-06-15 2000-03-06 東京エレクトロン株式会社 プラズマ処理方法
FR2663806A1 (fr) * 1990-06-25 1991-12-27 Commissariat Energie Atomique Reacteur a plasma du type triode, utilisable notamment pour la gravure, le depot ou le nettoyage de surfaces.
DE4025396A1 (de) * 1990-08-10 1992-02-13 Leybold Ag Einrichtung fuer die herstellung eines plasmas
US5052339A (en) * 1990-10-16 1991-10-01 Air Products And Chemicals, Inc. Radio frequency plasma enhanced chemical vapor deposition process and reactor
JPH04362091A (ja) * 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd プラズマ化学気相成長装置
US5260236A (en) * 1991-06-07 1993-11-09 Intel Corporation UV transparent oxynitride deposition in single wafer PECVD system
JPH05175163A (ja) * 1991-12-24 1993-07-13 Mitsubishi Electric Corp プラズマ処理装置
DE69226253T2 (de) * 1992-01-24 1998-12-17 Applied Materials, Inc., Santa Clara, Calif. Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
JP3122228B2 (ja) * 1992-05-13 2001-01-09 忠弘 大見 プロセス装置
US5567267A (en) * 1992-11-20 1996-10-22 Tokyo Electron Limited Method of controlling temperature of susceptor
US5665167A (en) * 1993-02-16 1997-09-09 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus having a workpiece-side electrode grounding circuit
JP3351843B2 (ja) * 1993-02-24 2002-12-03 忠弘 大見 成膜方法
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5433786A (en) * 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JPH09503350A (ja) * 1994-05-13 1997-03-31 アプライド マテリアルズ インコーポレイテッド 有磁気場励起マルチ容量プラズマ発生装置および関連方法
US5607542A (en) * 1994-11-01 1997-03-04 Applied Materials Inc. Inductively enhanced reactive ion etching
US5716534A (en) * 1994-12-05 1998-02-10 Tokyo Electron Limited Plasma processing method and plasma etching method
US5605637A (en) * 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
US5932116A (en) 1995-06-05 1999-08-03 Tohoku Unicom Co., Ltd. Power supply for multi-electrode discharge
US5656123A (en) * 1995-06-07 1997-08-12 Varian Associates, Inc. Dual-frequency capacitively-coupled plasma reactor for materials processing
TW323387B (enExample) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
JP2814370B2 (ja) * 1995-06-18 1998-10-22 東京エレクトロン株式会社 プラズマ処理装置
US5865937A (en) * 1995-08-21 1999-02-02 Applied Materials, Inc. Broad-band adjustable power ratio phase-inverting plasma reactor
KR970052089A (enExample) * 1995-12-05 1997-07-29
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
US5981899A (en) 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor

Also Published As

Publication number Publication date
KR20010040831A (ko) 2001-05-15
US6227141B1 (en) 2001-05-08
DE69918063D1 (de) 2004-07-22
US6112697A (en) 2000-09-05
JP2004006885A (ja) 2004-01-08
EP1057207A1 (en) 2000-12-06
JP3822055B2 (ja) 2006-09-13
KR100388529B1 (ko) 2003-06-25
WO1999043017A1 (en) 1999-08-26
JP4217883B2 (ja) 2009-02-04
DE69918063T2 (de) 2005-06-30
AU3293999A (en) 1999-09-06
EP1057207B1 (en) 2004-06-16
JP2002504748A (ja) 2002-02-12
TW523830B (en) 2003-03-11

Similar Documents

Publication Publication Date Title
ATE269586T1 (de) Reaktor zur radiofrequenz betriebenen plasma- aktivierten chemischen dampfabscheidung und verfahren
KR100498584B1 (ko) 플라즈마처리장치및플라즈마처리방법
ATE420454T1 (de) Gepulstes plasmabehandlungsverfahren und vorrichtung
ATE430376T1 (de) Plasmareaktor zur behandlung von grossflächigen substraten
ATE207978T1 (de) Verfahren und vorrichtung zum zünden von plasmen in einem process modul
BR0309811A (pt) sistema e método de carburação, auxiliada por plasma, de um objeto
TW328617B (en) Plasma processing device and plasma processing method
EP0831516A3 (en) Device and method for processing a plasma to alter the surface of a substrate using neutrals
TW283250B (en) Plasma enhanced chemical processing reactor and method
MY124608A (en) Semiconductor process chamber electrode
KR930017103A (ko) 드라이 에칭 방법 및 그 장치
ATE506687T1 (de) Antenne zur erzeugung gleichförmiger prozessraten
TW428045B (en) Plasma cleaning and etching methods using non-global-warming compounds
US20080286495A1 (en) System and method for power function ramping of split antenna pecvd discharge sources
CN111883410B (zh) 批次型衬底处理设备
SE8902391L (sv) Foerfarande jaemte anordning foer att behandla kiselplattor
Greaves et al. Experimental study of an ion-temperature-gradient driven instability in a linear machine
WO2019194540A1 (ko) 복합 rf 주파수를 사용하는 플라즈마 건식 세정 장치
US6404134B2 (en) Plasma processing system
JPH07142400A (ja) プラズマ処理方法及び装置
JPWO2022125231A5 (enExample)
ATE358329T1 (de) Vorrichtung zur plasmagestützten bearbeitung von oberflächen planarer substrate
Terajima et al. Development of a combinatorial atmospheric pressure cold plasma processor
JPH10303188A (ja) プラズマ処理方法およびその装置
JPS58100430A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties