ATE207978T1 - Verfahren und vorrichtung zum zünden von plasmen in einem process modul - Google Patents
Verfahren und vorrichtung zum zünden von plasmen in einem process modulInfo
- Publication number
- ATE207978T1 ATE207978T1 AT95100710T AT95100710T ATE207978T1 AT E207978 T1 ATE207978 T1 AT E207978T1 AT 95100710 T AT95100710 T AT 95100710T AT 95100710 T AT95100710 T AT 95100710T AT E207978 T1 ATE207978 T1 AT E207978T1
- Authority
- AT
- Austria
- Prior art keywords
- process module
- plasma
- electrode
- electrodes
- radiofrequency
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/183,529 US5565036A (en) | 1994-01-19 | 1994-01-19 | Apparatus and method for igniting plasma in a process module |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE207978T1 true ATE207978T1 (de) | 2001-11-15 |
Family
ID=22673192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT95100710T ATE207978T1 (de) | 1994-01-19 | 1995-01-19 | Verfahren und vorrichtung zum zünden von plasmen in einem process modul |
Country Status (5)
Country | Link |
---|---|
US (2) | US5565036A (de) |
EP (1) | EP0665306B1 (de) |
JP (1) | JP3158236B2 (de) |
AT (1) | ATE207978T1 (de) |
DE (1) | DE69523488T2 (de) |
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JP4608511B2 (ja) * | 2007-02-09 | 2011-01-12 | 国立大学法人東京工業大学 | 表面処理装置 |
JP5024667B2 (ja) * | 2007-06-20 | 2012-09-12 | 国立大学法人名古屋大学 | ラジカル発生装置 |
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JP5404950B1 (ja) | 2012-07-18 | 2014-02-05 | ラボテック株式会社 | 堆積装置および堆積方法 |
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US10800092B1 (en) | 2013-12-18 | 2020-10-13 | Surfx Technologies Llc | Low temperature atmospheric pressure plasma for cleaning and activating metals |
US9406485B1 (en) | 2013-12-18 | 2016-08-02 | Surfx Technologies Llc | Argon and helium plasma apparatus and methods |
US9799565B2 (en) * | 2014-12-24 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming semiconductor device structure with gate |
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US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
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US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
US20220115211A1 (en) * | 2019-05-09 | 2022-04-14 | Spp Technologies Co., Ltd. | Method of igniting plasma and plasma generating system |
CN111455330A (zh) * | 2020-05-20 | 2020-07-28 | 江苏东鋆光伏科技有限公司 | 利用直流反应溅射法制备三氧化二铝薄膜的方法 |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
CN114182212A (zh) * | 2021-11-23 | 2022-03-15 | 安徽工业大学 | 一种使用真空紫外光提高气相沉积过程离化率的方法 |
CN114164417A (zh) * | 2021-11-23 | 2022-03-11 | 安徽工业大学 | 一种使用真空紫外光实现气相沉积中不同粒子可控离化的方法 |
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-
1994
- 1994-01-19 US US08/183,529 patent/US5565036A/en not_active Expired - Lifetime
-
1995
- 1995-01-19 JP JP00667895A patent/JP3158236B2/ja not_active Expired - Fee Related
- 1995-01-19 EP EP95100710A patent/EP0665306B1/de not_active Expired - Lifetime
- 1995-01-19 DE DE69523488T patent/DE69523488T2/de not_active Expired - Fee Related
- 1995-01-19 AT AT95100710T patent/ATE207978T1/de active
-
1996
- 1996-02-02 US US08/595,753 patent/US5789867A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0665306A1 (de) | 1995-08-02 |
EP0665306B1 (de) | 2001-10-31 |
DE69523488T2 (de) | 2002-04-11 |
DE69523488D1 (de) | 2001-12-06 |
US5789867A (en) | 1998-08-04 |
JPH07278821A (ja) | 1995-10-24 |
JP3158236B2 (ja) | 2001-04-23 |
US5565036A (en) | 1996-10-15 |
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