ATE66701T1 - Verfahren und vorrichtung zum auftragen von hydriertem, amorphem silizium auf ein substrat in plasmaumgebung. - Google Patents

Verfahren und vorrichtung zum auftragen von hydriertem, amorphem silizium auf ein substrat in plasmaumgebung.

Info

Publication number
ATE66701T1
ATE66701T1 AT87810548T AT87810548T ATE66701T1 AT E66701 T1 ATE66701 T1 AT E66701T1 AT 87810548 T AT87810548 T AT 87810548T AT 87810548 T AT87810548 T AT 87810548T AT E66701 T1 ATE66701 T1 AT E66701T1
Authority
AT
Austria
Prior art keywords
substrate
electrodes
frequency
silicon
deposition
Prior art date
Application number
AT87810548T
Other languages
English (en)
Inventor
Hermann Curtins
Original Assignee
Inst Microtechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Microtechnique filed Critical Inst Microtechnique
Application granted granted Critical
Publication of ATE66701T1 publication Critical patent/ATE66701T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
AT87810548T 1986-09-26 1987-09-23 Verfahren und vorrichtung zum auftragen von hydriertem, amorphem silizium auf ein substrat in plasmaumgebung. ATE66701T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH3868/86A CH668145A5 (fr) 1986-09-26 1986-09-26 Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma.
EP87810548A EP0263788B1 (de) 1986-09-26 1987-09-23 Verfahren und Vorrichtung zum Auftragen von hydriertem, amorphem Silizium auf ein Substrat in Plasmaumgebung

Publications (1)

Publication Number Publication Date
ATE66701T1 true ATE66701T1 (de) 1991-09-15

Family

ID=4265212

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87810548T ATE66701T1 (de) 1986-09-26 1987-09-23 Verfahren und vorrichtung zum auftragen von hydriertem, amorphem silizium auf ein substrat in plasmaumgebung.

Country Status (6)

Country Link
US (1) US4933203A (de)
EP (1) EP0263788B1 (de)
JP (1) JPH07105354B2 (de)
AT (1) ATE66701T1 (de)
CH (1) CH668145A5 (de)
DE (1) DE3772506D1 (de)

Families Citing this family (20)

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US4830702A (en) * 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
IT1227877B (it) * 1988-11-25 1991-05-14 Eniricerche S P A Agip S P A Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile
KR0170387B1 (ko) † 1989-10-03 1999-03-30 제임스 조셉 드롱 고주파 반도체 웨이퍼 가공장치 및 방법
ES2125229T3 (es) * 1990-07-31 1999-03-01 Applied Materials Inc Reactor de tratamiento por plasma.
US5582880A (en) * 1992-03-27 1996-12-10 Canon Kabushiki Kaisha Method of manufacturing non-single crystal film and non-single crystal semiconductor device
JP3164956B2 (ja) * 1993-01-28 2001-05-14 アプライド マテリアルズ インコーポレイテッド Ｃｖｄにより大面積のガラス基板上に高堆積速度でアモルファスシリコン薄膜を堆積する方法
US5849372A (en) * 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
EP0719447B1 (de) * 1993-09-17 1998-07-22 Isis Innovation Limited Rf plasmareaktor
US5565036A (en) * 1994-01-19 1996-10-15 Tel America, Inc. Apparatus and method for igniting plasma in a process module
US5926689A (en) * 1995-12-19 1999-07-20 International Business Machines Corporation Process for reducing circuit damage during PECVD in single wafer PECVD system
US20030143410A1 (en) * 1997-03-24 2003-07-31 Applied Materials, Inc. Method for reduction of contaminants in amorphous-silicon film
AUPP055497A0 (en) * 1997-11-26 1997-12-18 Pacific Solar Pty Limited High rate deposition of amorphous silicon films
JP3581546B2 (ja) * 1997-11-27 2004-10-27 キヤノン株式会社 微結晶シリコン膜形成方法および光起電力素子の製造方法
JPH11233801A (ja) 1998-02-17 1999-08-27 Canon Inc 微結晶シリコン膜の形成方法、および光起電力素子
JP3046965B1 (ja) * 1999-02-26 2000-05-29 鐘淵化学工業株式会社 非晶質シリコン系薄膜光電変換装置の製造方法
JP2001040478A (ja) * 1999-05-27 2001-02-13 Canon Inc 堆積膜形成装置及び堆積膜形成方法
JP2001345273A (ja) 2000-05-31 2001-12-14 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び光起電力素子
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
JP2003007629A (ja) 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
JP2002371357A (ja) 2001-06-14 2002-12-26 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び半導体素子並びにシリコン系薄膜の形成装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS56105627A (en) * 1980-01-28 1981-08-22 Fuji Photo Film Co Ltd Manufacture of amorphous semiconductor
JPS59128281A (ja) * 1982-12-29 1984-07-24 信越化学工業株式会社 炭化けい素被覆物の製造方法
US4524089A (en) * 1983-11-22 1985-06-18 Olin Corporation Three-step plasma treatment of copper foils to enhance their laminate adhesion
JPH0685391B2 (ja) * 1984-10-09 1994-10-26 キヤノン株式会社 堆積膜形成方法
JPS6331110A (ja) * 1986-07-25 1988-02-09 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
US4933203A (en) 1990-06-12
EP0263788B1 (de) 1991-08-28
EP0263788A1 (de) 1988-04-13
CH668145A5 (fr) 1988-11-30
JPH07105354B2 (ja) 1995-11-13
DE3772506D1 (de) 1991-10-02
JPS63197329A (ja) 1988-08-16

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